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1. 发明专利

JP2013093618A Substrate processing apparatus, manufacturing method of semiconductor device and electrode 有权
标题翻译：基板加工装置，半导体器件和电极的制造方法
公开(公告)号：JP2013093618A
公开(公告)日：2013-05-16
申请号：JP2013020673
申请日：2013-02-05
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： KONYA TADASHI , YAMAMOTO TETSUO , SHIMA NOBUHITO , ISHIMARU NOBUO
IPC分类号： H01L21/31 , C23C16/505
摘要： PROBLEM TO BE SOLVED: To make the quality of a substrate to be processed uniform by making an electrode less likely to shrink.SOLUTION: The substrate processing apparatus includes a processing chamber for housing substrates, a gas supply unit for supplying process gas into the processing chamber, a pair of electrodes to which a high frequency power is applied in order to bring the process gas into active state, and a housing tube for housing the pair of electrodes, respectively, in a state where they are bent in at least one place. The electrode has a core wire composed of a metal, a plurality of tube bodies coupled by the core wire so as to be foldable, and a braided member composed of a metal and provided to cover the plurality of tube bodies.
摘要翻译：要解决的问题：通过使电极不太可能收缩，使基板的质量被加工均匀。解决方案：基板处理装置包括用于容纳基板的处理室，用于将处理气体供应到处理室中的气体供应单元，施加高频功率的一对电极，以使处理气体进入活动状态，以及用于在至少一个位置弯曲的状态下分别容纳该对电极的收容管。电极具有由金属构成的芯线，由芯线联结成可折叠的多个管体，以及由金属构成并设置成覆盖多个管体的编织部件。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2011151081A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2011151081A
公开(公告)日：2011-08-04
申请号：JP2010009367
申请日：2010-01-19
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： KONYA TADASHI , ISHIMARU NOBUO
IPC分类号： H01L21/205 , C23C16/50 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of preventing influence by high frequency noise. SOLUTION: A noise elimination filter 212 for eliminating the high frequency noise is connected to a power supply line 208 for a heater for supplying power to the heater 207, and a shield member 211 for shielding the high frequency noise is incorporated between the heater 207 and the noise elimination filter 212 inside an insulating wiring covering member 210 covering the conductive wiring 209 of the power supply line 208 for the heater. A noise elimination filter 262 for eliminating the high frequency noise is connected to the compensating lead wire 264 of a thermocouple 263, and a shield member 268 for shielding the high frequency noise is incorporated between the thermocouple 263 and the noise elimination filter 262 inside an insulating wiring covering member 266 covering the conductive wiring 265 of the compensating lead wire 264. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供能够防止高频噪声影响的基板处理装置。解决方案：用于消除高频噪声的噪声消除滤波器212连接到用于向加热器207供电的加热器的电源线208，并且用于屏蔽高频噪声的屏蔽构件211被并入加热器207和噪声消除滤波器212，覆盖用于加热器的电源线208的导电布线209的绝缘布线覆盖部件210内。用于消除高频噪声的噪声消除滤波器262连接到热电偶263的补偿导线264，并且用于屏蔽高频噪声的屏蔽构件268被并入绝热内的热电偶263和噪声消除滤波器262之间布线覆盖部件266覆盖补偿引线264的导电布线265.版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2011018914A Substrate processing apparatus, and semiconductor device manufacturing method 审中-公开
标题翻译：基板加工设备和半导体器件制造方法
公开(公告)号：JP2011018914A
公开(公告)日：2011-01-27
申请号：JP2010185278
申请日：2010-08-20
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： ISHIMARU NOBUO
IPC分类号： H01L21/31 , C23C16/505
CPC分类号： H01J37/32541 , C23C16/509 , H01J37/32559
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of increasing the amount of active species generated in a plasma, and to provide a semiconductor device manufacturing method.SOLUTION: The substrate processing apparatus is provided with: a processing container 203; gas supplying sections 232a, 232b for supplying a desired process gas to the processing container 203; a gas exhausting section 246 for exhausting the excessive process gas from the processing container 203; a substrate placing member 217 for placing a plurality of substrates 200 in a stacked state in the processing container 203; and an electrode 301 to which high frequency power is applied to generate plasma for exciting the process gas. The electrode 301 is provided with two long and thin linear sections 302, 303 arranged parallel; and a short-circuiting section 304 wherein ends on one side of the linear sections 302, 303 are electrically short-circuited. The linear sections 302, 303 extend to a side of the substrate 200 in a direction vertical to a main plane of the substrate 200.
摘要翻译：要解决的问题：提供能够增加等离子体中产生的活性种类的量的基板处理装置，并提供半导体器件制造方法。解决方案：基板处理装置具有：处理容器203; 用于向处理容器203供应所需工艺气体的气体供应部分232a，232b; 用于排出来自处理容器203的过量处理气体的排气部246; 用于将处于堆叠状态的多个基板200放置在处理容器203中的基板放置构件217; 以及施加高频功率以产生用于激发处理气体的等离子体的电极301。电极301设置有平行布置的两个长而薄的线状部302,303。以及短路部304，其中线状部302,303的一侧的端部电气短路。线性部分302,303在垂直于衬底200的主平面的方向上延伸到衬底200的一侧。

4. 发明专利

JP2004228601A Apparatus for processing substrate 有权
公开(公告)号：JP2004228601A
公开(公告)日：2004-08-12
申请号：JP2004127686
申请日：2004-04-23
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： KONYA TADASHI , TOYODA KAZUYUKI , SATO TAKETOSHI , KAGAYA TORU , SHIMA NOBUHITO , ISHIMARU NOBUO , SAKAI MASANORI , OKUDA KAZUYUKI , YAGI YASUSHI , WATANABE SEIJI , KUNII YASUO
IPC分类号： C23C16/455 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To supply a gas uniformly to loaded substrates by equalizing the flow quantity and the flow velocity of the gas supplied to the stacked substrates.
SOLUTION: In a reaction tube 6, a buffer chamber 17 having buffer chamber holes 3 with a same opening area is provided, a gas nozzle 2 having gas nozzle holes 4 of which opening area increases from the upper stream side to the lower stream side is disposed in the buffer chamber 17, and the gas belching from the gas nozzle 2 is introduced into the buffer chamber 17 temporarily, then supplied to a wafer 7 through the buffer chamber holes 3 after equalizing the gas flow velocity.
COPYRIGHT: (C)2004,JPO&NCIPI

5. 发明专利

JP2013065872A Manufacturing method of semiconductor device and substrate processing apparatus 审中-公开
标题翻译：半导体器件和衬底加工设备的制造方法
公开(公告)号：JP2013065872A
公开(公告)日：2013-04-11
申请号：JP2012249258
申请日：2012-11-13
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： TOYODA KAZUYUKI , INOKUCHI YASUHIRO , TAKEBAYASHI MOTONARI , KONYA TADASHI , ISHIMARU NOBUO
IPC分类号： H01L21/316 , H01L21/31 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To improve the film thickness uniformity in a wafer surface.SOLUTION: A manufacturing method of a semiconductor device includes the steps of: supplying a process gas to a discharge chamber which is defined on an inner peripheral surface of a processing chamber 12, where multiple substrates are laminated and housed, and houses a pair of electrodes therein; applying electric power to the electrode to form plasma thereby activating the process gas. The steps are performed and the substrate is processed using the activated process gas.
摘要翻译：要解决的问题：提高晶片表面的膜厚均匀性。解决方案：半导体器件的制造方法包括以下步骤：将处理气体供应到限定在处理室12的内周面上的放电室，其中多个基板被层压和容纳，并且容纳一对电极; 向电极施加电力以形成等离子体，从而激活处理气体。执行步骤，并使用活化的工艺气体处理衬底。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2010192910A Substrate processing apparatus and method 有权
标题翻译：基板加工装置和方法
公开(公告)号：JP2010192910A
公开(公告)日：2010-09-02
申请号：JP2010070991
申请日：2010-03-25
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： MIYASHITA TOMOYASU , ISHIMARU NOBUO
IPC分类号： H01L21/31 , C23C16/505 , H01L21/3065 , H05H1/46
CPC分类号： C23C16/452 , C23C16/345 , C23C16/45546 , C23C16/4584 , H01J37/32082 , H01J37/321 , H01J37/32559 , H01L21/67109
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and method, in which deterioration of discharging electrodes for exciting a processing gas into plasma is prevented or suppressed, thereby service life of the discharging electrodes are improved. SOLUTION: The substrate processing apparatus has a heating means arranged so as to externally surround a reaction tube 203 for containing a substrate; a pair of electrodes 269 for exciting the processing gas into plasma, formed inside the heating means; a coupling coil 311 connected across a pair of the electrode; a protective container 275 for air-tightly containing the pair of electrodes 269 and the coupling coil 311 and having an inert gas environment set in its inside; and an induction coil 312 arranged outside the protective container 275, inductively coupled to the coupling coil 311, and to which high-frequency electric power is applied. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题为了提供一种基板处理装置和方法，其中防止或抑制将处理气体激发到等离子体中的放电电极的劣化，从而提高了放电电极的使用寿命。解决方案：基板处理装置具有布置成外部包围用于容纳基板的反应管203的加热装置; 一对电极269，用于将处理气体激发成等离子体，形成在加热装置的内部; 连接在一对电极上的耦合线圈311; 用于气密地包含一对电极269和耦合线圈311并且在其内部设置有惰性气体环境的保护容器275; 以及设置在保护容器275外部的感应线圈312，感应耦合到耦合线圈311，并且施加高频电力。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2006287153A Substrate treatment apparatus 审中-公开
标题翻译：基板处理设备
公开(公告)号：JP2006287153A
公开(公告)日：2006-10-19
申请号：JP2005108417
申请日：2005-04-05
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： ISHIMARU NOBUO
IPC分类号： H01L21/31 , C23C16/505
摘要： PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus for manufacturing a semiconductor substrate with a high yield, by preventing plasma damages to the substrate and metallic contamination. SOLUTION: By using high-frequency voltage from an oscillator 8, two discharge electrodes 5a, 5b, arranged in a buffer chamber 6, causes plasma electric discharge so that reactive gas introduced into the buffer chamber 6 is excited to treat the substrate 2 in a reactive tube 1. The potential change of the plasma generated from two discharge electrodes 5a, 5b is measured by a monitor electrode 22. As to the potential change of the plasma measured by the monitor electrode 22, the polarity of the potential is reversed by a high frequency transformer 16 and applied to two discharge electrodes 5a, 5b. In this way, the potential change generated by two discharge electrodes 5a, 5b is restricted seemingly. Then, plasma discharge between two discharge electrodes 5a, 5b and a metallic seal chap 3 is made weak, so parasitic plasma is not generated outside the buffer chamber. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过防止对基板的等离子体损伤和金属污染来提供用于以高产率制造半导体基板的基板处理装置。解决方案：通过使用来自振荡器8的高频电压，布置在缓冲室6中的两个放电电极5a，5b引起等离子体放电，使得引入到缓冲室6中的反应气体被激发以处理衬底由两个放电电极5a，5b产生的等离子体的电位变化由监视电极22测量。关于由监视电极22测量的等离子体的电位变化，电位的极性为由高频变压器16反转并施加到两个放电电极5a，5b。以这种方式，由两个放电电极5a，5b产生的电位变化看起来被限制。然后，两个放电电极5a，5b和金属密封圈3之间的等离子体放电变弱，因此在缓冲室外部不产生寄生等离子体。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2006190875A Substrate treatment apparatus 审中-公开
标题翻译：基板处理设备
公开(公告)号：JP2006190875A
公开(公告)日：2006-07-20
申请号：JP2005002398
申请日：2005-01-07
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： ISHIMARU NOBUO
IPC分类号： H01L21/31 , C23C16/509
摘要： PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus for suppressing the generation of plasma outside a buffer chamber.
SOLUTION: The substrate treatment apparatus comprises a treatment chamber for storing a substrates; a gas supplying means for supplying treatment gas into the treatment chamber; a pair of electrodes that generate plasma by applying a high-frequency voltage and perform the plasma excitation of treatment gas supplied from the gas supplying means by the generated plasma; and a voltage application means for applying high-frequency voltages to the pair of electrodes so that the phase of a voltage at one of the pair of electrodes becomes opposite to that of the other electrode.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于抑制缓冲室外的等离子体产生的基板处理装置。解决方案：基板处理装置包括用于存储基板的处理室; 用于将处理气体供给到处理室中的气体供给装置; 一对电极，通过施加高频电压产生等离子体，并通过所产生的等离子体对从气体供给装置供给的处理气体进行等离子体激发; 以及电压施加装置，用于向一对电极施加高频电压，使得该对电极中的一个电极处的电压的相位与另一个电极的相位相反。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2006188729A Substrate treatment apparatus 审中-公开
标题翻译：基板处理设备
公开(公告)号：JP2006188729A
公开(公告)日：2006-07-20
申请号：JP2005000961
申请日：2005-01-05
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： ISHIMARU NOBUO
IPC分类号： C23C16/455 , H01L21/31 , H05H1/00 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus capable of preventing harmful effects caused by improper ignition and ignition delay of plasma. SOLUTION: In an ALD apparatus comprising a process tube 31 having a treatment chamber 32 to collectively treat a plurality of wafers 1, a gas feed pipe 38 to feed dichloro-silane gas 73 to the treatment chamber 32, a gas feed pipe 50 to feed ammonium gas 71 to the treatment chamber 32, an exhaust pipe 35 to exhaust the treatment chamber 32, a pair of electrodes 57, 57 to excite plasma in the treatment chamber 32, and a high frequency power source 58 to apply the high frequency power to both electrodes, an optical sensor 63 to detect the light emission of plasma is arranged outside the treatment chamber 32, and the optical sensor 63 is connected to a controller 60 to control the high frequency power source 58. The controller 60 detects improper ignition and ignition delay of plasma by the signal from the optical sensor 63 in an early stage to avoid repetition of the ignition state with the most unstable plasma state and to ensure the situation capable of ensuring the stable film deposition. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供能够防止由于点火不当和等离子体点火延迟引起的有害影响的基板处理装置。解决方案：在包括具有处理室32以共同处理多个晶片1的处理管31的ALD装置中，将二氯硅烷气体73供给到处理室32的气体供给管38，气体供给管 50以将铵气71供给到处理室32，排出管35以排出处理室32，一对电极57,57以激发处理室32中的等离子体和高频电源58以施加高对两个电极进行高频电力，用于检测等离子体的发光的光学传感器63布置在处理室32的外部，并且光学传感器63连接到控制器60以控制高频电源58.控制器60检测不正确通过来自光学传感器63的信号在早期阶段等离子体的点火和点火延迟，以避免以最不稳定的等离子体状态重复点火状态，并且确保能够确保稳定的膜放电的情况 sition。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2004039795A Substrate treatment equipment 审中-公开
公开(公告)号：JP2004039795A
公开(公告)日：2004-02-05
申请号：JP2002193405
申请日：2002-07-02
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： TOYODA KAZUYUKI , KAGAYA TORU , SHIMA NOBUHITO , KONYA TADASHI , ISHIMARU NOBUO
IPC分类号： C23C16/452 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To stably carry sufficient active species to a treated substrate, to reduce a treatment temperature, and to simplify a structure.
SOLUTION: Substrate treatment equipment is equipped with a quartz reaction tube 1. A gas which needs not be activated and gas which needs be activated are alternately supplied into the reaction tube 1 to carry out desired treatment on wafers 7 stored in the reaction tube 1. In part of the reaction tube 1, a quartz chamber 60 which communicates with the reaction tube 1 is formed as an integral part of the reaction tube 1. The chamber 60 is composed of a discharge section 2 formed outside the reaction tube 1, and a buffer chamber 6 formed inside the reaction tube 1. The discharge section 2 produces plasma from treatment gas which needs be activated which is introduced via a gas introduction port 8, and the gas which needs be activated is activated by the plasma to generate active species. The active species generated in the discharge section 2 are carried through the buffer chamber 6, to be supplied to each wafer 7 stacked inside the reaction tube 1. The treatment gas which needs not be activated is supplied to each wafer 7 through a nozzle 43.
COPYRIGHT: (C)2004,JPO

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