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1. 发明专利

JP2012104720A Substrate processing apparatus, method of manufacturing semiconductor device and semiconductor device 有权
标题翻译：基板加工装置，制造半导体器件和半导体器件的方法
公开(公告)号：JP2012104720A
公开(公告)日：2012-05-31
申请号：JP2010253231
申请日：2010-11-11
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SASAKI SHINYA , TAKEBAYASHI YUJI , OGURA SHINTARO
IPC分类号： H01L21/31 , C01F7/02 , C23C16/44
CPC分类号： H01L21/0228 , C23C16/403 , C23C16/45527 , C23C16/45546 , C23C16/45578 , H01L21/02178
摘要： PROBLEM TO BE SOLVED: To reduce deposition of reaction products or decomposition products on the inner wall of a nozzle, and to prevent foreign matters from scattering into the processing chamber.SOLUTION: The substrate processing apparatus comprises a processing chamber, a heating unit, a raw gas supply unit, a raw gas nozzle, an exhaust unit, and a control unit which controls at least the heating unit, the raw gas supply unit and the exhaust unit. The raw gas nozzle is disposed at a predetermined position in the processing chamber where the raw gas is not decomposed even if the temperature in the processing chamber is higher than the thermal decomposition temperature of the raw gas. The control unit repeats a cycle, including a process of supplying raw gas into the processing chamber at different flow velocities so as not to be mixed, a predetermined number of times.
摘要翻译：要解决的问题：为了减少反应产物或分解产物在喷嘴的内壁上的沉积，并且防止异物散射到处理室中。原材料处理装置包括处理室，加热单元，原料气体供给单元，原料气体喷嘴，排气单元和至少控制加热单元的控制单元，原料气体供给单元和排气单元。即使处理室内的温度高于原料气体的热分解温度，原料气体喷嘴配置在处理室内的原料气体不分解的规定位置。控制单元重复循环，包括以不同的流速将原料气体以不同的流速供给到处理室中的过程，预定次数。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2011061108A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2011061108A
公开(公告)日：2011-03-24
申请号：JP2009211273
申请日：2009-09-14
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： HORII SADAYOSHI , IMAI YOSHINORI , TAKEBAYASHI YUJI , OKADA ITARU , KATO TSUTOMU
IPC分类号： H01L21/31 , C23C16/448
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of maintaining the pressure in an inside of a carburetor and of stably vaporizing a large flow volume of raw material.
SOLUTION: Large-diameter gate valve-type maintenance valves Vs4, Vb4, Vt4 having a low pressure loss are provided to a first raw gas supplying pipe 102s, a second raw gas supplying pipe 102b, and a third raw gas supplying pipe 102t, respectively. The installation location of the maintenance valves Vs4, Vb4, Vt4 does not have flow path in the valves narrow down like diaphragm valves nor have flow paths in the valves bent, and is substantially equivalent to the first raw gas supply pipe 102s, the second raw gas supply pipe 102b, and the third raw gas supply pipe 102t having no valve is provided.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够保持化油器内部的压力并稳定地蒸发大量流动体积的原料的基板处理装置。解决方案：具有低压力损失的大直径闸阀式维护阀Vs4，Vb4，Vt4设置在第一原料气体供给管102s，第二原料气体供给管102b和第三原料气体供给管 102t。维护阀Vs4，Vb4，Vt4的安装位置在阀门中不具有像隔膜阀一样变窄的流路，也没有阀的流路弯曲，并且基本上等同于第一原料气体供给管102s，第二原料气体供给管102b和不具有阀的第三原料气体供给管102t。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2011044577A Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2011044577A
公开(公告)日：2011-03-03
申请号：JP2009191627
申请日：2009-08-21
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： YAMAZAKI HIROHISA , TAKEBAYASHI YUJI , ITAYA HIDEJI , OGAWA ARIHITO
IPC分类号： H01L21/316 , C23C16/40 , H01L21/31 , H01L21/8242 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To form a titanium oxide film having high permittivity at a low temperature. SOLUTION: A capacitor insulation film is formed by carrying out a step (S100) for forming a lower electrode 155 on a wafer 14, a step (S200) for forming an AlO x film 160 on a lower electrode 155 interface, a step (S300) for forming an HfAlO x film 165 on the AlO x film 160, a step (S400) for annealing (heat treatment) the wafer 14 with the HfAlO x film 165 formed thereon, a step (S500) for forming a TiO 2 film 170 on the annealed HfAlO x film 165, a step (S600) for annealing the wafer 14 with the TiO 2 film 170 formed thereon. An upper electrode 175 is formed on the capacitor insulation film (S700). COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：在低温下形成具有高介电常数的氧化钛膜。解决方案：通过执行用于在晶片14上形成下电极155的步骤（S100）形成电容器绝缘膜，形成AlO SB SB薄膜160的步骤（S200）下电极155界面，在AlO SB薄膜160上形成HfAlO薄膜165的步骤（S300），用于退火（热处理）的步骤（S400）在其上形成有HfAlO x 膜165的晶片14上，在退火的HfAlO x SB上形成TiO 2 SB1薄膜170的步骤（S500）薄膜165，用于在其上形成TiO 2薄膜170退火晶片14的步骤（S600）。在电容绝缘膜上形成上电极175（S700）。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2010114420A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2010114420A
公开(公告)日：2010-05-20
申请号：JP2009179630
申请日：2009-07-31
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： MIYA HIRONOBU , SAKAI MASANORI , MIZUNO KANEKAZU , TOYODA KAZUYUKI , TAKEBAYASHI YUJI , KATO TSUTOMU , ONO KENJI , MORIKAWA ATSUSHI , OKADA ITARU
IPC分类号： H01L21/316 , C23C16/452 , H01L21/31 , H01L21/8242 , H01L27/108
CPC分类号： C23C16/405 , C23C16/483 , H01L21/02164 , H01L21/02181 , H01L21/02189 , H01L21/02277 , H01L21/0228 , H01L21/3141 , H01L21/31608 , H01L21/31641 , H01L21/31645
摘要： PROBLEM TO BE SOLVED: To improve the coatability or loading effect of an oxide film without increasing the supply amount or supply time of an oxidant. SOLUTION: The method of manufacturing a semiconductor device includes a substrate loading step of loading at least one substrate to a processing chamber; an oxide film forming step of forming an oxide film on the substrate by alternately supplying a first reaction material and a second reaction material containing oxygen atoms to the processing chamber while heating the substrate; and a substrate unloading step of unloading the substrate from the processing chamber, wherein the forming of the oxide film is performed by keeping the substrate at a temperature equal to or lower than a self-decomposition temperature of the first reaction material and by irradiating the second reaction material with ultraviolet light. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提高氧化膜的涂布性或负载效果，而不增加氧化剂的供给量或供给时间。解决方案：制造半导体器件的方法包括将至少一个衬底装载到处理室的衬底加载步骤; 氧化膜形成步骤，通过在加热所述基板的同时向所述处理室交替地供给第一反应材料和含有氧原子的第二反应材料，在所述基板上形成氧化膜; 以及从处理室卸载基板的基板卸载步骤，其中通过将基板保持在等于或低于第一反应材料的自分解温度的温度下并通过照射第二反应材料来进行氧化膜的形成具有紫外线的反应物质。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2009206489A Substrate processing apparatus 有权
标题翻译：基板加工设备
公开(公告)号：JP2009206489A
公开(公告)日：2009-09-10
申请号：JP2008312661
申请日：2008-12-08
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SAKAI MASANORI , TAKEBAYASHI YUJI , KATO TSUTOMU , SASAKI SHINYA , YAMAZAKI HIROHISA
IPC分类号： H01L21/31 , C23C16/455 , H01L21/027 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To accelerate the supply of gas between adjacent substrates without reducing the number of substrates that is collectively processed. SOLUTION: The substrate processing apparatus includes a processing chamber for storing and processing the substrates horizontally stacked in multiple stages, at least one processing gas supply nozzle that is extended along the inner wall of the processing chamber in the stacking direction of the substrates and supplies processing gas into the processing chamber, a pair of inert gas supply nozzles which are extended along the inner wall of the processing chamber in the stacking direction of the substrates, are provided so as to hold the processing gas supply nozzle from both sides along the circumferential direction of the substrate, and supply inert gas into the processing chamber, and an exhaust line for exhausting air from the processing chamber. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了加速相邻基板之间的气体供给，而不减少共同处理的基板的数量。解决方案：基板处理装置包括：处理室，用于存储和处理水平堆叠成多级的基板;至少一个处理气体供给喷嘴，其在基板的堆叠方向上沿着处理室的内壁延伸; 并且将处理气体供给到处理室中，沿着基板的层叠方向沿着处理室的内壁延伸的一对惰性气体供给喷嘴被设置成从两侧保持处理气体供给喷嘴基板的周向，向处理室供给惰性气体，以及从处理室排出空气的排气管路。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2007335608A Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：JP2007335608A
公开(公告)日：2007-12-27
申请号：JP2006165291
申请日：2006-06-14
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： KOSHIMIZU TAKASHI , TAKEBAYASHI YUJI , SATO TAKETOSHI , KASAHARA OSAMU
IPC分类号： H01L21/316
摘要： PROBLEM TO BE SOLVED: To remove oxygen components in a processing chamber to inhibit oxidation of a plurality of substrate surfaces.
SOLUTION: A manufacturing method of a semiconductor device includes a step of carrying a plurality of substrates into the processing chamber, a step of raising a temperature of the substrates to a processing temperature, a step of supplying a reactive gas into the processing chamber for making the gas into plasma, a step of treating a substrate surface by means of the plasma of the reactive gas, a step of lowering the temperature of the substrates, and a step of carrying the substrates out of the processing chamber. During the step of raising the temperature of the substrates to the processing temperature, a mixture gas including a hydrogen gas and an inert gas is supplied into the processing chamber.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了去除处理室中的氧组分以抑制多个衬底表面的氧化。解决方案：半导体器件的制造方法包括将多个基板载持到处理室中的步骤，将基板的温度升高到处理温度的步骤，将反应气体供应到处理中的步骤用于使气体进入等离子体的腔室，通过反应气体的等离子体处理衬底表面的步骤，降低衬底的温度的步骤以及将衬底运送到处理室之外的步骤。在将基板的温度升高到加工温度的步骤中，将包含氢气和惰性气体的混合气体供给到处理室。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2007173340A Substrate processing apparatus 有权
标题翻译：基板加工设备
公开(公告)号：JP2007173340A
公开(公告)日：2007-07-05
申请号：JP2005365788
申请日：2005-12-20
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： TAKEBAYASHI YUJI
IPC分类号： H01L21/205 , C23C16/44 , H01L21/3065 , H01L21/324
CPC分类号： Y02P20/52
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of more easily performing maintenance than in conventional techniques. SOLUTION: The substrate processing apparatus 10 includes a reaction tube 52 having a downward opening 54 and a lower vessel 56 for occuluding the opening 54 while supporting the reaction tube 52 from a lower side in the direction of gravity. An O ring 60 is disposed between a furnace throat flange 68 constituting a part of the lower vessel 56 and the reaction tube 52. A push bolt 62 is screwed into a screw hole 68b provided in the furnace throat flange 68, and by turning the push bolt 62, a tip end 62a of the push bolt 68 rises to push up the reaction tube 52 by the tip end 62a, and the reaction tube 52 separates from the lower vessel 56. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够比常规技术更容易进行维护的基板处理装置。解决方案：基板处理装置10包括具有向下的开口54的反应管52和用于在开口54上遮挡的下部容器56，同时从重力方向的下侧支撑反应管52。 O形环60设置在构成下部容器56的一部分的炉喉法兰68和反应管52之间。推螺栓62拧入设置在炉喉法兰68中的螺纹孔68b中，并且通过转动推动螺栓62，推杆68的顶端62a上升，由顶端62a向上推动反应管52，反应管52与下部容器56分离。（C）2007，JPO＆INPIT

8. 发明专利

JP2006278652A Board processor 审中-公开
标题翻译：董事会主席
公开(公告)号：JP2006278652A
公开(公告)日：2006-10-12
申请号：JP2005094653
申请日：2005-03-29
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： TAKEBAYASHI YUJI , TOYODA KAZUYUKI , YASHIMA SHINJI , SUGIHARA MASARU
IPC分类号： H01L21/205 , C23C16/509 , H01L21/304 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a board processor which improves the inner-surface uniformity of processed boards in a plasma process. SOLUTION: The board processor comprises a first electrode group 305 consisting of a plurality of plate electrodes, a second electrode group 306 consisting of a plurality of plate electrodes, and a rotating shaft 310 which extends inside and outside a processing chamber 201 to rotate the first/second electrode groups 305, 306 in the processing chamber 201. The electrodes of the first electrode group 305 and that of the second electrode group 306 are stacked alternately to place each board 200 between each pair of electrodes. At least either of the first/second electrode groups 305, 306 is led out through the inside of the rotating shaft 310 to the outside of the processing chamber 201, and is connected to a high-frequency power source 315 via a rotary capacitor 314. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种提高等离子体处理中的加工板的内表面均匀性的板处理器。解决方案：板处理器包括由多个板电极组成的第一电极组305，由多个板电极组成的第二电极组306和在处理室201内部和外部延伸的旋转轴310 旋转处理室201中的第一/第二电极组305,306。第一电极组305和第二电极组306的电极交替堆叠以将每个板200放置在每对电极之间。第一/第二电极组305,306中的至少一个通过旋转轴310的内部被引出到处理室201的外部，并且经由旋转电容器314连接到高频电源315。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2006013238A Semiconductor manufacturing apparatus 审中-公开
标题翻译：半导体制造设备
公开(公告)号：JP2006013238A
公开(公告)日：2006-01-12
申请号：JP2004190095
申请日：2004-06-28
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： TAKEBAYASHI YUJI
IPC分类号： H01L21/683 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus provided with an elevating/lowering mechanism that is constituted to prevent occurrence of inclination in a substrate placing base, such as a process table, housed in an airtight container. SOLUTION: The semiconductor manufacturing apparatus is provided with: a substrate treating chamber 30; the substrate placing base 31 which is provided in the treating chamber 30 and holds a substrate 25; and an elevating/lowering base 64 which is connected to the placing base 31 and ascends and descends. The apparatus is also provided with: vertically driving sections 66, 67 and 68 which elevate and lower the base 64; and a connecting member 69 which connects the driving sections 66, 67 and 68, and the base 64 to each other. The connecting member 69 is connected to the base 64 so that the member 69 may have a degree of freedom in at least its inclined direction. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种具有升降机构的半导体制造装置，该升降机构被构造成防止容纳在气密容器中的基板放置基座（例如加工台）的倾斜发生。解决方案：半导体制造装置设置有：基板处理室30; 设置在处理室30中并保持基板25的基板放置基座31; 以及升降基座64，其连接到放置基座31并上升和下降。该装置还设置有：升高和降低基座64的垂直驱动部分66,67和68; 以及将驱动部66,67和68以及基部64相互连接的连接部件69。连接构件69连接到基座64，使得构件69可以至少在其倾斜方向上具有自由度。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2012186485A Method for manufacturing semiconductor device, and semiconductor device 有权
标题翻译：制造半导体器件的方法和半导体器件
公开(公告)号：JP2012186485A
公开(公告)日：2012-09-27
申请号：JP2012100596
申请日：2012-04-26
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： TAKEBAYASHI YUJI , YAMAZAKI HIROHISA , HORII SADAYOSHI , ITAYA HIDEJI , OGAWA ARIHITO
IPC分类号： H01L27/108 , C23C16/40 , H01L21/316 , H01L21/8242
摘要： PROBLEM TO BE SOLVED: To form a capacitor insulating film which has a high dielectric constant and is stable in a high temperature state.SOLUTION: In a method for manufacturing a semiconductor device, by which a rutile type titanium oxide film as a capacitor insulating film is formed on a lower electrode formed on a substrate, an insulating film having a crystal lattice of substantially the same size as a crystal lattice of the titanium oxide film is formed as a base film of the titanium oxide film.

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