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1. 发明专利

JP2012089886A Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：JP2012089886A
公开(公告)日：2012-05-10
申请号：JP2012011861
申请日：2012-01-24
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SAKAI MASANORI , SHIMA NOBUHITO , OKUDA KAZUYUKI
IPC分类号： H01L21/31 , C23C16/44
CPC分类号： C23C16/4405 , C23C16/45536
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which effectively removes chemical elements contained in a cleaning gas.SOLUTION: A manufacturing method of a semiconductor device includes a process in which a substrate is carried in a processing chamber, a process in which multiple reactant gases are supplied alternately to the processing chamber to form a film on the substrate, a process in which the substrate is carried out from the processing chamber, a process in which a cleaning gas is supplied to the interior of the processing chamber to clean the interior of the processing chamber, and a process in which all of the multiple reactant gases are supplied to the processing chamber to remove chemical elements contained in the cleaning gas supplied to the processing chamber.
摘要翻译：解决的问题：提供有效地去除清洁气体中所含的化学元素的半导体器件的制造方法。解决方案：半导体器件的制造方法包括其中在处理室中承载衬底的过程，其中多个反应气体被交替地供应到处理室以在衬底上形成膜的工艺，工艺其中从处理室执行基板，其中将清洁气体供应到处理室的内部以清洁处理室的内部的过程以及其中供应所有多种反应气体的过程到处理室以除去供应到处理室的清洁气体中包含的化学元素。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2006012994A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2006012994A
公开(公告)日：2006-01-12
申请号：JP2004185363
申请日：2004-06-23
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： KONYA TADASHI , SHIMA NOBUHITO , ITO TAKESHI , NAKAGAWA TAKASHI
IPC分类号： H01L21/31 , H01L21/8242 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To cause a gas to uniformly contact in the surfaces of wafers and between wafers.
SOLUTION: A batch type remote plasma CVD apparatus comprises a process tube 31 having a processing chamber 32 formed therein, which houses and processes a boat 25 that holds a group of wafers 1; a gas supply pipe 35 for supplying a processing gas 61 to the processing chamber 32; an exhaust pipe 36 for exhausting the processing chamber 32; a partition 41 provided on the inner peripheral surface of the processing chamber 32 for forming a plasma chamber 40; and a nozzle 42 provided at the partition 41. In the batch type remote plasma CVD apparatus, a pair of partitions 52, 52 having a gas supply pipe side distribution port 53 and an exhaust pipe side distribution port 54 are disposed in the processing chamber 32 concentrically with the boat 25, and the exhaust pipe side distribution port 54 is formed in the shape of a vertically elongated reverse trapezoid. Since the gas issued from the nozzle flows into the inside of the both partitions from the gas supply pipe side distribution port, and uniformly exhausts from the exhaust pipe side distribution port, the gas is distributed uniformly inside the entire partitions, and the gas uniformly contacts in the surfaces of wafers and between wafers.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：使气体在晶片表面和晶片之间均匀接触。解决方案：批量型远程等离子体CVD装置包括处理管31，其具有形成在其中的处理室32，其容纳和处理保持一组晶片1的船25; 用于将处理气体61供给到处理室32的气体供给管35; 用于排出处理室32的排气管36; 设置在处理室32的内周面上用于形成等离子体室40的隔壁41; 以及设置在分隔件41的喷嘴42.在间歇式远程等离子体CVD装置中，具有供气管侧分配口53和排气管侧分配口54的一对隔壁52,52设置在处理室32内与船体25同心，并且排气管侧分配口54形成为垂直伸长的倒梯梯形。由于从喷嘴排出的气体从气体供给管侧分配口流入到两个隔壁的内部，并且从排气管侧分配口排出均匀，气体均匀地分布在整个隔壁内，气体均匀地接触在晶片的表面和晶片之间。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2005191169A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2005191169A
公开(公告)日：2005-07-14
申请号：JP2003428813
申请日：2003-12-25
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： KONYA TADASHI , SHIMA NOBUHITO
IPC分类号： H01L21/22 , H01L21/31 , H01L21/324
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus having a protecting tube capable of easily discharging a cleaning liquid from the protection tube even if the protection tube that is a tubule is cleaned by the cleaning liquid.
SOLUTION: The substrate processing apparatus 201 has a reaction tube 203 for forming space for accommodating and treating a substrate 200, and the protecting tube 50 provided on the inner or outer wall of the reaction tube 203. The protecting tube 50 is formed cylindrically and both the ends are open. By the device, the influence of surface tension in water is reduced, and the cleaning liquid remaining in the protecting tube can be easily discharged. When gas for drying is supplied from one end of the opening, the cleaning liquid remaining in the protecting tube can be discharged more easily.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种具有能够从保护管容易地排出清洗液的保护管的基板处理装置，即使用清洗液清洗作为小管的保护管。解决方案：基板处理装置201具有用于形成用于容纳和处理基板200的空间的反应管203和设置在反应管203的内壁或外壁上的保护管50.形成保护管50 圆柱形，两端均打开。通过该装置，表面张力在水中的影响降低，残留在保护管中的清洁液容易排出。当从开口的一端供给用于干燥的气体时，残留在保护管中的清洗液可以更容易地排出。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2004134465A Substrate treating device 有权
公开(公告)号：JP2004134465A
公开(公告)日：2004-04-30
申请号：JP2002295321
申请日：2002-10-08
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： KAGAYA TORU , SHIMA NOBUHITO , OKUDA KAZUYUKI , KONYA TADASHI
IPC分类号： C23C16/46 , C23C16/455 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To prolong the service life of a substrate treating device in which electrodes are arranged in a buffer chamber as a plasma generating source by preventing the oxidation of the electrodes.
SOLUTION: The substrate treating device has the plasma generating source in the buffer chamber formed in a reaction chamber, in which a substrate to be treated is charged and treats the substrate by generating an electrically neutral activate species by exciting an introduced gas with a plasma generated in the buffer chamber and sending the species into a treating space. As the plasma generating source, an electrode tube unit 22 constituted by arranging two electrodes 21 in a dielectric tube 16 and filling up the tube 16 with an inert gas 23 is used.
COPYRIGHT: (C)2004,JPO

5. 发明专利

JP2004063661A Device for manufacturing semiconductor 审中-公开
公开(公告)号：JP2004063661A
公开(公告)日：2004-02-26
申请号：JP2002218292
申请日：2002-07-26
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SHIMA NOBUHITO , TOYODA KAZUYUKI , OSUMI NAOTO
IPC分类号： C23C16/455 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To make the configuration of a reaction chamber axially symmetric, to make uniform the flow of gas, to improve the in-face uniformity of the temperature of a substrate, and to simplify the mechanism.
SOLUTION: This semiconductor manufacturing device is provided with a reaction chamber 10, a substrate mounting stands 5 and 6 housed in the reaction chamber on which a substrate 14 to be treated is mounted, a gas feeding part 15 for feeding reaction gas from the upper part of the substrate mounting stand, and an exhaust port 74 for exhausting the inside of the reaction chamber from the upper side of the reaction chamber.
COPYRIGHT: (C)2004,JPO

6. 发明专利

JP2004039795A Substrate treatment equipment 审中-公开
公开(公告)号：JP2004039795A
公开(公告)日：2004-02-05
申请号：JP2002193405
申请日：2002-07-02
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： TOYODA KAZUYUKI , KAGAYA TORU , SHIMA NOBUHITO , KONYA TADASHI , ISHIMARU NOBUO
IPC分类号： C23C16/452 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To stably carry sufficient active species to a treated substrate, to reduce a treatment temperature, and to simplify a structure.
SOLUTION: Substrate treatment equipment is equipped with a quartz reaction tube 1. A gas which needs not be activated and gas which needs be activated are alternately supplied into the reaction tube 1 to carry out desired treatment on wafers 7 stored in the reaction tube 1. In part of the reaction tube 1, a quartz chamber 60 which communicates with the reaction tube 1 is formed as an integral part of the reaction tube 1. The chamber 60 is composed of a discharge section 2 formed outside the reaction tube 1, and a buffer chamber 6 formed inside the reaction tube 1. The discharge section 2 produces plasma from treatment gas which needs be activated which is introduced via a gas introduction port 8, and the gas which needs be activated is activated by the plasma to generate active species. The active species generated in the discharge section 2 are carried through the buffer chamber 6, to be supplied to each wafer 7 stacked inside the reaction tube 1. The treatment gas which needs not be activated is supplied to each wafer 7 through a nozzle 43.
COPYRIGHT: (C)2004,JPO

7. 发明专利

JP2013093618A Substrate processing apparatus, manufacturing method of semiconductor device and electrode 有权
标题翻译：基板加工装置，半导体器件和电极的制造方法
公开(公告)号：JP2013093618A
公开(公告)日：2013-05-16
申请号：JP2013020673
申请日：2013-02-05
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： KONYA TADASHI , YAMAMOTO TETSUO , SHIMA NOBUHITO , ISHIMARU NOBUO
IPC分类号： H01L21/31 , C23C16/505
摘要： PROBLEM TO BE SOLVED: To make the quality of a substrate to be processed uniform by making an electrode less likely to shrink.SOLUTION: The substrate processing apparatus includes a processing chamber for housing substrates, a gas supply unit for supplying process gas into the processing chamber, a pair of electrodes to which a high frequency power is applied in order to bring the process gas into active state, and a housing tube for housing the pair of electrodes, respectively, in a state where they are bent in at least one place. The electrode has a core wire composed of a metal, a plurality of tube bodies coupled by the core wire so as to be foldable, and a braided member composed of a metal and provided to cover the plurality of tube bodies.
摘要翻译：要解决的问题：通过使电极不太可能收缩，使基板的质量被加工均匀。解决方案：基板处理装置包括用于容纳基板的处理室，用于将处理气体供应到处理室中的气体供应单元，施加高频功率的一对电极，以使处理气体进入活动状态，以及用于在至少一个位置弯曲的状态下分别容纳该对电极的收容管。电极具有由金属构成的芯线，由芯线联结成可折叠的多个管体，以及由金属构成并设置成覆盖多个管体的编织部件。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2005167021A Substrate processing device 有权
标题翻译：基板处理装置
公开(公告)号：JP2005167021A
公开(公告)日：2005-06-23
申请号：JP2003404914
申请日：2003-12-03
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： OKUDA KAZUYUKI , SHIMA NOBUHITO , KONYA TADASHI
IPC分类号： H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing device provided with a substrate processing furnace that is provided with a double gas introduction part to introduce a processing gas into a process chamber and that can reduce a difficult-to-purge area and efficiently process a substrate.
SOLUTION: The substrate processing device is provided with a process chamber, a buffer chamber 237 that introduces a processing gas into a process chamber and wherein a plurality of gas supply holes 248a are arranged vertically, and a nozzle 233 that is arranged in the buffer chamber 237 and introduces the processing gas into the buffer chamber 237 and wherein a plurality of gas supply holes 248b are arranged vertically. When viewed from the top, an opening of the gas supply hole 248b is directed toward a wall 251 of the buffer chamber 237 away from the gas supply hole 248a than a distance between the gas supply hole 248a and the gas supply hole 248b.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种具有基板处理炉的基板处理装置，该基板处理炉具有双重气体引入部分，以将处理气体引入处理室，并且可以减少难以清除的区域和有效地处理基板。解决方案：基板处理装置设置有处理室，缓冲室237，其将处理气体引入处理室，并且其中多个气体供应孔248a垂直布置，并且喷嘴233布置在缓冲室237并将处理气体引入缓冲室237，并且其中多个气体供应孔248b垂直布置。当从顶部观察时，气体供给孔248b的开口相对于气体供给孔248a和气体供给孔248b之间的距离相对于缓冲室237的壁251远离气体供给孔248a。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2005064306A Substrate processing device 有权
标题翻译：基板处理装置
公开(公告)号：JP2005064306A
公开(公告)日：2005-03-10
申请号：JP2003294015
申请日：2003-08-15
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SAKAI MASANORI , SHIMA NOBUHITO
IPC分类号： C23C16/455 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing device capable of suppressing mixture of two kinds of gases which produce a by-product when the gases are mixed with each other in an exhaust system, and reducing the generation of the by-product.
SOLUTION: The substrate treating device is controlled by means of a controller 321 to exhaust from a first exhaust piping 341 at the time of supplying an NH
3 gas to a treatment furnace 202 and, even after the supply of the NH
3 gas is stopped, to only exhaust from the piping 341 for about two seconds. After about two seconds, the device is controlled to exhaust from both the first exhaust piping 341 and a second exhaust piping 342 and, thereafter, to exhaust only from the second exhaust piping 342. Next, even after the supply of a DCS to the treatment furnace 202 is stopped, the substrate processing device is controlled by means of the controller 321 to exhaust only from the second exhaust piping 342 for about two seconds. After about two seconds, the device is controlled to exhaust from both the first and second exhaust piping 341 and 342 and, thereafter, to exhaust only from the first exhaust piping 341.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够抑制在排气系统中气体彼此混合时产生副产物的两种气体的混合的基板处理装置，并且减少副产物的产生，产品。解决方案：通过控制器321控制基板处理装置，以在将NH 3 SB 3气体供应到处理炉202时从第一排气管道341排出，并且甚至在 NH 3 SB 3气体的供给停止，仅从管道341排出约2秒钟。大约两秒钟后，装置被控制为从第一排气管道341和第二排气管道342两者排出，然后仅从第二排气管道342排出。接下来，即使在将DCS供应到处理之后炉202停止，借助于控制器321控制衬底处理装置，仅从第二排气管342排出大约两秒钟。大约两秒钟后，控制装置从第一和第二排气管道341和342排出，然后仅从第一排气管道341排出。（C）2005年，JPO和NCIPI

10. 发明专利

JP2005033058A Substrate treatment device 审中-公开
标题翻译：基板处理装置
公开(公告)号：JP2005033058A
公开(公告)日：2005-02-03
申请号：JP2003271910
申请日：2003-07-08
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： TOYODA KAZUYUKI , SHIMA NOBUHITO , KAGAYA TORU
IPC分类号： H01L21/22 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To solve the problem that since it is necessary to optimize the value of the opening area of a gas supply hole formed in a buffer chamber 237 which supplies gas to a treatment chamber by preparing a reaction tube having gas supply holes having various opening areas, and mounting the reaction tube on a treatment furnace one by one to verify the processing condition of a wafer, huge costs and time are required for the verification of the opening area of the gas supply hole, and that since a reaction tube 203 or the buffer chamber 237 is normally manufactured of an expensive material such as crystal, much huger costs are required for the verification of the opening area of the gas supply hole.
SOLUTION: This substrate treatment device is provided with a treatment chamber for housing and processing a substrate and a gas supplying means for supplying desired gas through a gas supplying hole opened in the treatment chamber to the treatment chamber. This substrate treatment device is characterized by adjusting the opening area of the gas supply hole by inserting an opening adjusting member into the gas supply hole.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题为了解决由于需要使形成在缓冲室237中的气体供给孔的开口面积的值最优化的问题，该缓冲室237通过制备具有气体的反应管向处理室供给气体供给具有各种开口面积的孔，并将反应管一个一个地安装在处理炉上，以验证晶片的加工状态，需要巨大的成本和时间来验证气体供应孔的开口面积，并且因为反应管203或缓冲室237通常由诸如晶体的昂贵材料制成，因此验证气体供应孔的开口面积需要较大的成本。解决方案：该基板处理装置设置有用于容纳和处理基板的处理室和用于通过在处理室中打开的供气孔将所需气体供应到处理室的气体供给装置。该基板处理装置的特征在于，通过将开口调整构件插入气体供给孔来调节气体供给孔的开口面积。版权所有（C）2005，JPO＆NCIPI

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