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1. 发明公开

EP1104057A3 High-power semiconductor laser device having current confinement structure and index-guided structure 有权
标题翻译：高功率半导体激光器电流限制和折射率导引结构
公开(公告)号：EP1104057A3
公开(公告)日：2003-11-26
申请号：EP00124832.7
申请日：2000-11-14
申请人： Fuji Photo Film Co., Ltd.
发明人： Fukunaga, Toshiaki , Wada, Mitsugu
IPC分类号： H01S5/223 , H01S3/0941
CPC分类号： H01S5/2231 , H01S5/2206 , H01S5/222 , H01S5/3201 , H01S5/32391
摘要： In a semiconductor laser device: a lower cladding layer; a lower optical waveguide layer; a compressive strain quantum well active layer made of In x3 Ga 1-x3 As 1-y3 P y3 , where 0 x8 Ga 1-x8 P of a second conductive type, and formed on the upper optical waveguide layer; an etching stop layer made of In x1 Ga 1-x1 As 1-y1 P y1 of the second conductive type, where 0≤x1≤0.3, 0≤y1≤0.3; a current confinement layer made of In x8 Ga 1-x8 P of the first conductive type, where x8=0.49±0.01; a second upper cladding layer made of Al z4 Ga 1-z4 As of the second conductive type, where 0.20≤z4≤0.50; and a contact layer of the second conductive type are formed on a GaAs substrate of a first conductive type in this order. In the semiconductor laser device, the absolute value of the product of the strain and the thickness of the compressive strain quantum well active layer is equal to or smaller than 0.25 nm; the absolute value of a second product of the strain and the thickness of the etching stop layer is equal to or smaller than 0.25 nm; and each of the lower cladding layer, the lower optical waveguide layer, the upper optical waveguide layer, the first upper cladding layer, the current confinement layer, the second upper cladding layer, and the contact layer has such a composition as to lattice-match with the GaAs substrate.

2. 发明公开

EP1104057A2 High-power semiconductor laser device having current confinement structure and index-guided structure 有权
标题翻译： Hochleistungshalbleiterlaser mit Strombegrenzung undindexgeführterStruktur
公开(公告)号：EP1104057A2
公开(公告)日：2001-05-30
申请号：EP00124832.7
申请日：2000-11-14
申请人： Fuji Photo Film Co., Ltd.
发明人： Fukunaga, Toshiaki , Wada, Mitsugu
IPC分类号： H01S5/223
CPC分类号： H01S5/2231 , H01S5/2206 , H01S5/222 , H01S5/3201 , H01S5/32391
摘要： In a semiconductor laser device: a lower cladding layer; a lower optical waveguide layer; a compressive strain quantum well active layer made of In x3 Ga 1-x3 As 1-y3 P y3 , where 0 x8 Ga 1-x8 P of a second conductive type, and formed on the upper optical waveguide layer; an etching stop layer made of In x1 Ga 1-x1 As 1-y1 P y1 of the second conductive type, where 0≤x1≤0.3, 0≤y1≤0.3; a current confinement layer made of In x8 Ga 1-x8 P of the first conductive type, where x8=0.49±0.01; a second upper cladding layer made of Al z4 Ga 1-z4 As of the second conductive type, where 0.20≤z4≤0.50; and a contact layer of the second conductive type are formed on a GaAs substrate of a first conductive type in this order. In the semiconductor laser device, the absolute value of the product of the strain and the thickness of the compressive strain quantum well active layer is equal to or smaller than 0.25 nm; the absolute value of a second product of the strain and the thickness of the etching stop layer is equal to or smaller than 0.25 nm; and each of the lower cladding layer, the lower optical waveguide layer, the upper optical waveguide layer, the first upper cladding layer, the current confinement layer, the second upper cladding layer, and the contact layer has such a composition as to lattice-match with the GaAs substrate.
摘要翻译：在半导体激光装置中：下包层; 下光波导层; 由Inx3Ga1-x3As1-y3Py3制成的压应变量子阱有源层，其中0

3. 发明授权

EP0473443B1 Buried-stripe type semiconductor laser device 失效
标题翻译：半导体激光埋条纹
公开(公告)号：EP0473443B1
公开(公告)日：1999-03-24
申请号：EP91307938.0
申请日：1991-08-30
申请人： SHARP KABUSHIKI KAISHA
发明人： Okumura, Toshiyuki , Inoguchi, Kazuhiko , Konushi, Fumihiro , Takiguchi, Haruhisa
IPC分类号： H01S3/19 , H01L33/00
CPC分类号： H01S5/227 , H01L33/0062 , H01S5/2201 , H01S5/32391

4. 发明授权

EP0395436B1 A semiconductor laser device, a semiconductor wafer, and a method for the production of the same 失效
标题翻译：半导体激光器，半导体晶片及其制造方法相同的
公开(公告)号：EP0395436B1
公开(公告)日：1997-09-10
申请号：EP90304612.6
申请日：1990-04-27
申请人： SHARP KABUSHIKI KAISHA
发明人： Kondo, Masaki , Sasaki, Kazuaki, , Morimoto, Taiji , Matsumoto, Mitsuhiro , Hosoba, Hiroyuki, , Matsui, Sadayoshi , Yamamoto, Saburo, , Suyama, Takahiro, , Kondo, Masafumi
IPC分类号： H01S3/19 , H01L33/00
CPC分类号： H01S5/32308 , H01S5/24 , H01S5/3202 , H01S5/32325 , H01S5/32391

5. 发明公开

EP0793266A2 Method for etching a compound semiconductor, a semi-conductor laser device and method for producing the same 失效
标题翻译：一种用于蚀刻化合物半导体，半导体激光器，以及其制备方法过程
公开(公告)号：EP0793266A2
公开(公告)日：1997-09-03
申请号：EP97102202.5
申请日：1997-02-12
申请人： MATSUSHITA ELECTRONICS CORPORATION
发明人： Chino, Toyoji , Kumabuchi, Yasuhito , Kidoguchi, Isao , Adachi, Hideto
IPC分类号： H01L21/306 , H01S3/19
CPC分类号： H01L21/473 , H01L21/30621 , H01S5/1064 , H01S5/209 , H01S5/2231 , H01S5/227 , H01S5/2275 , H01S5/32325 , H01S5/32391 , Y10S438/935
摘要： An etching method for performing dry-etching on a III-V group compound semiconductor or a II-VI group compound semiconductor in a dry-etching apparatus comprising a plasma source for creating a plasma of density of about 10 10 cm -3 or greater, using a mixed gas containing a gas including a halogen element and a gas including nitrogen. The etching conditions are as follows: (a flow rate of the gas containing said halogen gas)/(a flow rate of said nitrogen gas) ≥ 1 ; and an internal pressure during etching reaction is about 1 mTorr or greater.
摘要翻译：用于在III-V族化合物半导体或在干式蚀刻装置的II-VI族化合物半导体进行干式蚀刻包括等离子体源，用于创建的约10 <10>厘米<-3密度的等离子体蚀刻法 >或更大，使用的混合气体含有气体包含卤族元素和气体包括氮。蚀刻条件如下：/（一个流过所述氮气的速率）（在所述卤素气体含有气体的的流量）≥1; 和蚀刻反应过程中的内部压力为约1托或更高。

6. 发明公开

EP0732429A1 Method of growing multilayer crystal films by metal organic vapor phase epitaxy 失效
标题翻译： Verfahren zur Herstellung mehrschichtiger kristalliner Filmen durch Metallorganische-Dampfphase Epitaxie
公开(公告)号：EP0732429A1
公开(公告)日：1996-09-18
申请号：EP96301797.5
申请日：1996-03-15
申请人： NEC Corporation
发明人： Nakamura, Takahiro , Ae, Satoshi
IPC分类号： C30B25/02 , C30B29/40 , H01L21/205
CPC分类号： C30B25/02 , C30B25/14 , C30B29/40 , H01L21/02461 , H01L21/02463 , H01L21/02507 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01S5/32391 , H01S2304/04
摘要： Disclosed are methods of preparing multilayer structures with InGaAsP layers of different compositions by metal organic vapor phase epitaxy, which result in formation of sharp heterointerfaces. After an InGaAsP well layer has been grown, the process is kept on standby with a flow of AsH 3 and PH 3 , which are sources comprising elements of group V, at the well's composition ratios, and then with a flow of a source comprising an element of group V, including TBP (TBP/standby step), and an InGaAsP barrier layer is grown which has a smaller arsenic content than the well layer. TBP has a decomposition temperature.approximately 100°C lower than PH 3 , and thus provides a phosphorus pressure which is five times or more as high as that of PH 3 at identical growth temperatures and at identical V/III ratios. Therefore, during the process of growth of multilayer InGaAsP films, TBP may be used in a standby step with a flow of a source comprising an element of group V at the same composition ratio as is designed for an InGaAsP layer which has a smaller arsenic content than the previously grown layer and is subsequently grown, to prevent arsenic desorption from chamber walls and group V species desorption from the exposed interfaces, thus realizing sharp heterointerfaces.
摘要翻译：公开了通过金属有机气相外延制备具有不同组成的InGaAsP层的多层结构的方法，其导致形成尖锐的异质界面。在已经生长了InGaAsP阱层之后，以井的组成比，以包含V族元素的源的AsH 3和PH 3流保持该过程的待命状态，然后使源流包括源组V，包括TBP（TBP /备用步骤）和生长具有比阱层更小的砷含量的InGaAsP势垒层。 TBP具有比PH3低约100℃的分解温度，因此在相同的生长温度和相同的V / III比下提供磷压力是PH3的五倍或更多倍的磷压。因此，在多层InGaAsP膜的生长过程中，TBP可用于备用步骤，其中流动的源包含与对于具有较小砷含量的InGaAsP层相同的组成比的V族元素比之前生长的层并且随后生长，以防止从室壁的砷解吸和组V物质从暴露的界面解吸，从而实现尖锐的异质界面。

7. 发明公开

EP0666603A3 Laminated upper cladding structure for a light-emitting device and fabrication method 失效
标题翻译：用于发光装置及其制造方法上帽层。
公开(公告)号：EP0666603A3
公开(公告)日：1996-08-28
申请号：EP95300375.3
申请日：1995-01-20
申请人： Hewlett-Packard Company
发明人： Ludowise, Michael , Holonyak, Nick Jr. , Caracci, Stephen Joseph , Krames, Michael Ragan , Kish, Fred A.
IPC分类号： H01S3/19 , H01L21/316 , H01L33/00 , H01L21/335
CPC分类号： H01L29/513 , H01L21/746 , H01L21/8252 , H01L29/1054 , H01L29/517 , H01L29/66863 , H01L33/30 , H01S5/20 , H01S5/2059 , H01S5/22 , H01S5/2205 , H01S5/2214 , H01S5/2231 , H01S5/32391
摘要： A fabrication method for providing a semiconductor light-emitting device (36 ; 72) includes growing a plurality of layers on a semiconductor substrate, including forming a lower cladding layer (12; 40) and an active region (14; 42) for generating lightwaves. A laminated cladding structure is formed on the active region. The laminated cladding structure (16 ; 44) includes a lower layer (18 ; 46, 48 ; 76) that is substantially aluminum-free to inhibit oxidation and includes an upper layer (20 ; 50 ; 74) that is aluminum-bearing in order to promote oxidation. The upper layer of the lamination is oxidized along selected first regions (26, 28) and is selectively masked to prevent oxidation for second regions (30, 52). The oxidation of the first region is carried out under conditions such that a native oxide is formed throughout the thickness of the first regions. Electrical current to the active region for operating the light-emitting device is channeled via the unoxidized region of the upper layer of the lamination. In a preferred embodiment, the device is an InGaAsP-AIInAs-InP laser. Other electronic devices, such as FETs (58), can be also formed using the top-down approach. Preferably, oxidation is limited to an upper III-V semiconductor layer by forming a lower III-V semiconductor layer that includes In and/or P. Lateral oxidation can also be realized using this approach.

8. 发明公开

EP0706243A2 Distributed feedback semiconductor laser and method for producing the same 失效
标题翻译：分布式反馈半导体激光器及其制造方法
公开(公告)号：EP0706243A2
公开(公告)日：1996-04-10
申请号：EP95115272.7
申请日：1995-09-28
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Kito, Masahiro , Matsui, Yasushi , Ishino, Masato , Nakamura, Shinji , Otsuka, Nobuyuki
IPC分类号： H01S3/00 , H01S3/085 , H01S3/025 , H01L21/208 , H01L21/20 , C30B25/12 , G02B6/12
CPC分类号： B82Y20/00 , H01L21/02392 , H01L21/0243 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02513 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01S5/0265 , H01S5/06256 , H01S5/12 , H01S5/1228 , H01S5/1231 , H01S5/125 , H01S5/2077 , H01S5/2081 , H01S5/2272 , H01S5/2275 , H01S5/32391 , H01S5/34306 , H01S5/3434 , H01S5/34373
摘要： In a distributed feedback semiconductor laser includes an InP substrate and a multiple layer structure formed on a main surface of the InP substrate, the multiple layer structure includes at least an active layer for emitting laser light and a periodical structure for distributed feedback of the laser light, and the periodical structure includes a plurality of semiconductor regions each having a triangular cross section in a direction perpendicular to the main surface of the InP substrate and parallel to a cavity length of the distributed feedback semiconductor laser, the triangular cross section projecting toward the InP substrate. Said DFB laser can be index - or gain - coupled by an absorbing grating.
Saind DFB laser can be monolithically integrated with a modulator.
摘要翻译：在分布式反馈中，半导体激光器包括InP衬底和形成在InP衬底的主表面上的多层结构，多层结构至少包括用于发射激光的活性层和用于激光的分布式反馈的周期性结构，并且周期性结构包括多个半导体区域，每个半导体区域在垂直于InP衬底的主表面的方向上具有三角形截面，并且平行于分布式反馈半导体激光器的空腔长度，三角形截面朝向InP 基质。所述DFB激光器可以通过吸收光栅进行索引或增益耦合。 Saind DFB激光器可以与调制器单片集成。

9. 发明授权

EP0507956B1 DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER 失效
标题翻译：背部分布耦合半导体激光器
公开(公告)号：EP0507956B1
公开(公告)日：1996-02-28
申请号：EP91917810.3
申请日：1991-10-17
申请人： OPTICAL MEASUREMENT TECHNOLOGY DEVELOPMENT CO. LTD.
发明人： TADA, Kunio, 13-9, Minamiurawa 2-chome , NAKANO, Yoshiaki, 7-9, Matsubara 6-chome , INOUE, Takeshi, 1-304, 1-33, Bessho 7-chome , IRITA, Takeshi, 24-17, Akabanekita 2-chome , NAKAJIMA, Shin-ichi, 18-3, Nishiwaseda 2-chome , LUO, Yi, 27-12, Nishikubo 2-chome , IWAOKA, Hideto, 1994-120, Hazama-cho
IPC分类号： H01S3/18 , H01S3/085
CPC分类号： H01S5/1228 , H01S5/32391
摘要： A semiconductor laser for providing distributed feedback by gain coupling on an active layer (5) or light absorbing layer with a periodic variation in thickness in order to control periodic perturbation of the refractive index caused by the change in thickness of the active-layer (5) or light-absorbing-layer and obtain distributed feedback of light mainly due to the periodic perturbation of gain coefficient. The laser comprises structure made by combining layers (6) and (7) with different refractive indexes for cancelling the periodic change of the refractive index caused by the corrugated structure of the active layer (5) or light absorbing layer.

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