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1. 发明授权

EP0470783B1 Photodiode 失效
标题翻译：光电二极管
公开(公告)号：EP0470783B1
公开(公告)日：1996-06-05
申请号：EP91307142.9
申请日：1991-08-02
申请人： OPTICAL MEASUREMENT TECHNOLOGY DEVELOPMENT CO. LTD.
发明人： Wada, Morio , Seko, Masahito , Sekiguchi, Youichi , Iwaoka, Hideto
IPC分类号： H01L31/0304
CPC分类号： H01L31/03046 , H01L31/105 , H01L31/1844 , Y02E10/544

2. 发明授权

EP0507956B1 DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER 失效
标题翻译：背部分布耦合半导体激光器
公开(公告)号：EP0507956B1
公开(公告)日：1996-02-28
申请号：EP91917810.3
申请日：1991-10-17
申请人： OPTICAL MEASUREMENT TECHNOLOGY DEVELOPMENT CO. LTD.
发明人： TADA, Kunio, 13-9, Minamiurawa 2-chome , NAKANO, Yoshiaki, 7-9, Matsubara 6-chome , INOUE, Takeshi, 1-304, 1-33, Bessho 7-chome , IRITA, Takeshi, 24-17, Akabanekita 2-chome , NAKAJIMA, Shin-ichi, 18-3, Nishiwaseda 2-chome , LUO, Yi, 27-12, Nishikubo 2-chome , IWAOKA, Hideto, 1994-120, Hazama-cho
IPC分类号： H01S3/18 , H01S3/085
CPC分类号： H01S5/1228 , H01S5/32391
摘要： A semiconductor laser for providing distributed feedback by gain coupling on an active layer (5) or light absorbing layer with a periodic variation in thickness in order to control periodic perturbation of the refractive index caused by the change in thickness of the active-layer (5) or light-absorbing-layer and obtain distributed feedback of light mainly due to the periodic perturbation of gain coefficient. The laser comprises structure made by combining layers (6) and (7) with different refractive indexes for cancelling the periodic change of the refractive index caused by the corrugated structure of the active layer (5) or light absorbing layer.

3. 发明公开

EP0406005A3 Semiconductor laser and manufacture method therefor 失效
标题翻译：半导体激光器及其制造方法
公开(公告)号：EP0406005A3
公开(公告)日：1991-09-04
申请号：EP90307142.1
申请日：1990-06-29
申请人： OPTICAL MEASUREMENT TECHNOLOGY DEVELOPMENT CO. LTD.
发明人： Tada, Kunio , Nakano, Yoshiaki , Luo, Yi , Inoue, Takeshi , Hosomatsu, Haruo , Iwaoka, Hideto
IPC分类号： H01S3/085 , H01L33/00
CPC分类号： B82Y20/00 , H01S5/1228 , H01S5/34
摘要： This invention relates to a distributed feedback semiconductor laser having a diffractive grating on an active layer (7) in order to generate stimulated emission by recombining electrons with positive holes thereon by the light distributed feedback. This invention laser can achieve precisely single wavelength longitudinal mode lasing as a thin buffer layer (6) is grown on the surface of the semiconductor layer (4) which has been etched with irregular pattern corresponding to the diffractive grating (5) while the corrugated pattern is being maintained intact and an active layer (7) is grown on the surface thereof in a manner to fill in the dents of the corrugated pattern (5) as much as possible so that a diffractive grating is formed on the active layer (7) and light distributed feedback is caused mainly by the periodic perturbation of gain coefficients stimulated by the diffractive grating.

4. 发明授权

EP0406005B1 Semiconductor laser and manufacture method therefor 失效
标题翻译：相同的半导体激光器及其制造方法
公开(公告)号：EP0406005B1
公开(公告)日：1996-06-12
申请号：EP90307142.1
申请日：1990-06-29
申请人： OPTICAL MEASUREMENT TECHNOLOGY DEVELOPMENT CO. LTD.
发明人： Tada, Kunio , Nakano, Yoshiaki , Luo, Yi , Inoue, Takeshi , Hosomatsu, Haruo , Iwaoka, Hideto
IPC分类号： H01S3/085 , H01L33/00
CPC分类号： B82Y20/00 , H01S5/1228 , H01S5/34

5. 发明授权

EP0413568B1 Optical modulator 失效
标题翻译：的光调制器。
公开(公告)号：EP0413568B1
公开(公告)日：1994-12-07
申请号：EP90308949.8
申请日：1990-08-15
申请人： OPTICAL MEASUREMENT TECHNOLOGY DEVELOPMENT CO. LTD.
发明人： Miyamoto, Hiroshi , Iwaoka, Hideto
IPC分类号： G02F1/03 , G02F1/035
CPC分类号： G02F1/0356

6. 发明公开

EP0404551A3 Optical semiconductor device 失效
标题翻译：光学半导体器件
公开(公告)号：EP0404551A3
公开(公告)日：1992-08-26
申请号：EP90306760.1
申请日：1990-06-20
申请人： OPTICAL MEASUREMENT TECHNOLOGY DEVELOPMENT CO. LTD.
发明人： Yamamoto, Eiji
IPC分类号： H01S3/103 , H01S3/085
CPC分类号： B82Y20/00 , H01S5/06203 , H01S5/06206 , H01S5/06256 , H01S5/1032 , H01S5/12 , H01S5/125 , H01S5/2231 , H01S5/227 , H01S5/2275 , H01S5/34 , H01S5/3428 , H01S5/5045
摘要： This invention provides an optical semiconductor device which can independently control optical gains or optical characteristics electrically by forming two layers on two pn junctions with either a pnp structure or an npn structure (5) of a band gap energy narrower than adjacent layers thereto to enable increase of modulation width of a monolithic integrated laser with an optical modulator such as wavelength tunable laser or control of spectrum forms of a semiconductor optical amplifier.
摘要翻译：本发明提供了一种光学半导体器件，其可以通过在具有比其相邻层窄的带隙能量的pnp结构或npn结构的两个pn结上形成两个层来独立地控制光学增益或光学特性，以使得能够增加调制宽度具有诸如波长可调谐激光器的光调制器或半导体光放大器的光谱形式的控制的单片集成激光器。

7. 发明公开

EP0406005A2 Semiconductor laser and manufacture method therefor 失效
标题翻译： Halbleiterlaser und Verfahren zur Herstellung desselben。
公开(公告)号：EP0406005A2
公开(公告)日：1991-01-02
申请号：EP90307142.1
申请日：1990-06-29
申请人： OPTICAL MEASUREMENT TECHNOLOGY DEVELOPMENT CO. LTD.
发明人： Tada, Kunio , Nakano, Yoshiaki , Luo, Yi , Inoue, Takeshi , Hosomatsu, Haruo , Iwaoka, Hideto
IPC分类号： H01S3/085 , H01L33/00
CPC分类号： B82Y20/00 , H01S5/1228 , H01S5/34
摘要： This invention relates to a distributed feedback semiconductor laser having a diffractive grating on an active layer (7) in order to generate stimulated emission by recombining electrons with positive holes thereon by the light distributed feedback. This invention laser can achieve precisely single wavelength longitudinal mode lasing as a thin buffer layer (6) is grown on the surface of the semiconductor layer (4) which has been etched with irregular pattern corresponding to the diffractive grating (5) while the corrugated pattern is being maintained intact and an active layer (7) is grown on the surface thereof in a manner to fill in the dents of the corrugated pattern (5) as much as possible so that a diffractive grating is formed on the active layer (7) and light distributed feedback is caused mainly by the periodic perturbation of gain coefficients stimulated by the diffractive grating.
摘要翻译：本发明涉及一种在有源层（7）上具有衍射光栅的分布式反馈半导体激光器，以通过光分布反馈将电子与其上的空穴重新组合来产生受激发射。本发明的激光器可以实现精确的单波长纵模激光，因为薄的缓冲层（6）生长在半导体层（4）的表面上，该半导体层（4）已经用对应于衍射光栅（5）的不规则图案蚀刻，而波纹图案保持完整，并且以尽可能多的方式填充皱纹图案（5）的凹陷，在其表面上生长活性层（7），使得在活性层（7）上形成衍射光栅，光分布反馈主要是由衍射光栅所刺激的增益系数的周期扰动引起的。

8. 发明公开

EP0470783A1 Photodiode 失效
标题翻译：光电二极管。
公开(公告)号：EP0470783A1
公开(公告)日：1992-02-12
申请号：EP91307142.9
申请日：1991-08-02
申请人： OPTICAL MEASUREMENT TECHNOLOGY DEVELOPMENT CO. LTD.
发明人： Wada, Morio , Seko, Masahito , Sekiguchi, Youichi , Iwaoka, Hideto
IPC分类号： H01L31/0304
CPC分类号： H01L31/03046 , H01L31/105 , H01L31/1844 , Y02E10/544
摘要： This invention provides a photodiode having a GaInAs light-absorbing layer on an InP substrate which can reduce temperature dependence of the spectral responsivity as well as enable the optical power measurement with less dependence on the incident light spectral width by using a material with smaller composition ratio of Ga for the light-absorbing layer to extend the absorption edge toward the longer wavelength side.
摘要翻译：本发明提供了一种在InP衬底上具有GaInAs光吸收层的光电二极管，其可以降低光谱响应性的温度依赖性，并且通过使用具有较小组成比的材料使光功率测量对入射光谱宽度的依赖性降低的Ga用于光吸收层，以将吸收边延伸到较长波长侧。

9. 发明公开

EP0413568A2 Optical modulator 失效
标题翻译： Optischer调制器
公开(公告)号：EP0413568A2
公开(公告)日：1991-02-20
申请号：EP90308949.8
申请日：1990-08-15
申请人： OPTICAL MEASUREMENT TECHNOLOGY DEVELOPMENT CO. LTD.
发明人： Miyamoto, Hiroshi , Iwaoka, Hideto
IPC分类号： G02F1/03 , G02F1/035
CPC分类号： G02F1/0356
摘要： This invention enables low voltage operation and improves matching in velocities of the radio frequency and of light by lowering effective index and to thereby expand modulation frequency bandwidth by structuring an optical modulator where a substrate of the material of which refractive index changes by an application of electric field description, and the insulating buffer layers (3) are eliminated from the regions other than the electrodes (4). By structuring the modulator in a manner to satisfy the prescribed conditions with dimensions of each unit, the light can be matched in complete phase matching (group velocity matching) with radiofrequency while characteristic impedance of the electrodes is fixed at a desired value.
摘要翻译：本发明能够实现低电压操作，并且通过降低有效指数来改善射频和光速的匹配，从而通过构造光调制器来扩展调制频带宽，其中折射率的材料的基底通过施加电场描述和绝缘缓冲层（3）从除电极（4）之外的区域中消除。通过以满足每个单位的尺寸的规定条件的方式构造调制器，可以将光在完全相位匹配（组速度匹配）中与射频匹配，同时将电极的特征阻抗固定为期望值。

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