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1. 发明授权

EP0473443B1 Buried-stripe type semiconductor laser device 失效
标题翻译：半导体激光埋条纹
公开(公告)号：EP0473443B1
公开(公告)日：1999-03-24
申请号：EP91307938.0
申请日：1991-08-30
申请人： SHARP KABUSHIKI KAISHA
发明人： Okumura, Toshiyuki , Inoguchi, Kazuhiko , Konushi, Fumihiro , Takiguchi, Haruhisa
IPC分类号： H01S3/19 , H01L33/00
CPC分类号： H01S5/227 , H01L33/0062 , H01S5/2201 , H01S5/32391

2. 发明公开

EP0475714A3 A distributed feedback semiconductor laser device and a method of producing the same 失效
标题翻译：分布式反馈半导体激光器件及其制造方法
公开(公告)号：EP0475714A3
公开(公告)日：1992-10-28
申请号：EP91308232.7
申请日：1991-09-10
申请人： SHARP KABUSHIKI KAISHA
发明人： Kudo, Hiroaki , Takiguchi, Haruhisa , Inoguchi, Kazuhiko , Nakanishi, Chitose , Sugahara, Satoshi
IPC分类号： H01S3/085 , H01L33/00
CPC分类号： H01S5/12 , H01S5/1228 , H01S5/20 , H01S5/2231
摘要： A distributed feedback semiconductor laser device comprising a current blocking structure having a stripe groove (15), and a diffraction grating (14) formed in the bottom of the stripe groove (15). The current blocking structure is formed over an active layer (3) for laser oscillation, and it includes an etch stop layer (8) against a groove etching in a lower potion of the current blocking structure. The refractive index distribution in transverse directions inside the stripe groove (15) is controlled by the thickness of the optical guiding layer (5), enabling oscillation of the fundamental transerse mode.

3. 发明授权

EP0475714B1 A distributed feedback semiconductor laser device and a method of producing the same 失效
标题翻译：一种半导体激光器及其制备分布反馈和过程
公开(公告)号：EP0475714B1
公开(公告)日：1995-12-27
申请号：EP91308232.7
申请日：1991-09-10
申请人： SHARP KABUSHIKI KAISHA
发明人： Kudo, Hiroaki , Takiguchi, Haruhisa , Inoguchi, Kazuhiko , Nakanishi, Chitose , Sugahara, Satoshi
IPC分类号： H01S3/085 , H01L33/00
CPC分类号： H01S5/12 , H01S5/1228 , H01S5/20 , H01S5/2231

4. 发明公开

EP0433051A3 A semiconductor laser device and a method of producing the same 失效
标题翻译：一种半导体激光器件及其制造方法
公开(公告)号：EP0433051A3
公开(公告)日：1992-04-15
申请号：EP90313536.6
申请日：1990-12-12
申请人： SHARP KABUSHIKI KAISHA
发明人： Konushi, Fumihiro , Nakatsu, Hiroshi , Inoguchi, Kazuhiko , Okumura, Toshiyuki , Seki, Akinori , Takiguchi, Haruhisa , Nakanishi, Chitose , Sugahara, Satoshi , Kudo, Hiroaki
IPC分类号： H01S3/19 , H01S3/25 , H01S3/085 , H01L33/00
CPC分类号： H01S5/227 , H01L21/02392 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L33/0062 , H01S5/12 , H01S5/1228 , H01S5/20 , H01S5/2059 , H01S5/2201 , H01S5/2213 , H01S5/2272 , H01S5/2275 , H01S5/32391 , H01S5/4031 , H01S5/4037
摘要： A semiconductor laser device having a mesa stripe whose side faces are facets of {111} planes is disclosed. In the laser device, a current blocking layer is formed on a semiconductor substrate whose main surface is a (100) plane, and a channel which is oriented along the direction is formed in the current blocking layer. The mesa stripe is formed on the substrate within the channel by a selective growth technique. The mesa stripe has a multilayer structure including an active layer and is covered by a burying layer.

5. 发明公开

EP0371795A3 Optical coupling circuit element 失效
标题翻译：光耦合电路元件
公开(公告)号：EP0371795A3
公开(公告)日：1991-05-08
申请号：EP89312473.5
申请日：1989-11-30
申请人： SHARP KABUSHIKI KAISHA
发明人： Nakatsu, Hiroshi , Okumura, Toshiyuki , Inoguchi, Kazuhiko , Takiguchi, Haruhisa
IPC分类号： G02B6/42 , G02B6/08
CPC分类号： G02B6/4206 , G02B3/08
摘要： An optical coupling circuit element providing one transparent substrate (7), a first micro Fresnel lens (11) formed on one side surface (31) of said substrate, and a second micro Fresnel lens (21) formed on the other side surface (31b) of said substrate, so that coherent light incident into said first micro Fresnel lens is projected, through said transparent substrate, on said second micro Fresnel lens to be left therefrom as a collimating beams, which is useful for directing light emitted from coherent source such as semi-conductor laser (5) to optical communication means such as optical fiber (6) for condensation.

6. 发明授权

EP0371795B1 Optical coupling circuit element 失效
标题翻译：元件，用于光学耦合。
公开(公告)号：EP0371795B1
公开(公告)日：1994-04-13
申请号：EP89312473.5
申请日：1989-11-30
申请人： SHARP KABUSHIKI KAISHA
发明人： Nakatsu, Hiroshi , Okumura, Toshiyuki , Inoguchi, Kazuhiko , Takiguchi, Haruhisa
IPC分类号： G02B6/42 , G02B6/08
CPC分类号： G02B6/4206 , G02B3/08

7. 发明公开

EP0525971A3 A semiconductor device and a method for producing the same 失效
标题翻译：一种半导体器件及其制造方法
公开(公告)号：EP0525971A3
公开(公告)日：1993-02-24
申请号：EP92305782.2
申请日：1992-06-24
申请人： SHARP KABUSHIKI KAISHA
发明人： Kudo, Hiroaki , Inoguchi, Kazuhiko , Sugahara, Satoshi , Takiguchi, Haruhisa
IPC分类号： H01L33/00 , H01S3/19 , H01S3/085 , H01L29/76
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/20 , H01S5/026 , H01S5/1228 , H01S5/1231 , H01S5/223 , H01S5/32 , H01S5/32308 , H01S5/327 , H01S5/341 , H01S5/3412 , H01S5/3428 , H01S5/343 , H01S5/3432
摘要： A semiconductor device includes a multiple layer structure including a substantially flat active layer (103), and a first semiconductor layer (101) and a second semiconductor layer (102) adjacent to each other, the semiconductor layers (101,102) having a corrugation (106) at an interface therebetween; and a generating device which is connected to the multiple layer structure. An electromagnetic field intensity distribution is generated by use of the generating device in a waveguide region including the active layers (103), and the active layer (103) includes a gain distribution having a distribution pattern corresponding to the corrugation. The multiple layer structure is produced by forming the corrugation (106) on an upper surface of the first semiconductor layer (101), and forming the rest of the multiple layer structure including the second semiconductor layer (102) and the active layer (103) by using a vapor phase growth method once so as to make the active layer substantially flat. Then, the generating device is formed to be in contact with the multiple layer structure.
摘要翻译：一种半导体器件包括多层结构，该多层结构包括基本平坦的有源层（103）以及彼此相邻的第一半导体层（101）和第二半导体层（102），半导体层（101,102）具有波纹）在它们之间的界面处; 以及连接到多层结构的发电装置。通过在包括有源层（103）的波导区域中使用生成装置来生成电磁场强度分布，并且有源层（103）包括具有与波纹对应的分布模式的增益分布。通过在第一半导体层（101）的上表面上形成波纹（106）并且形成包括第二半导体层（102）和有源层（103）的多层结构的其余部分来产生多层结构，通过一次使用气相生长法以使活性层基本平坦。然后，发生装置形成为与多层结构接触。

8. 发明公开

EP0475714A2 A distributed feedback semiconductor laser device and a method of producing the same 失效
标题翻译：一种半导体激光器及其制备分布反馈和过程。
公开(公告)号：EP0475714A2
公开(公告)日：1992-03-18
申请号：EP91308232.7
申请日：1991-09-10
申请人： SHARP KABUSHIKI KAISHA
发明人： Kudo, Hiroaki , Takiguchi, Haruhisa , Inoguchi, Kazuhiko , Nakanishi, Chitose , Sugahara, Satoshi
IPC分类号： H01S3/085 , H01L33/00
CPC分类号： H01S5/12 , H01S5/1228 , H01S5/20 , H01S5/2231
摘要： A distributed feedback semiconductor laser device comprising a current blocking structure having a stripe groove (15), and a diffraction grating (14) formed in the bottom of the stripe groove (15). The current blocking structure is formed over an active layer (3) for laser oscillation, and it includes an etch stop layer (8) against a groove etching in a lower potion of the current blocking structure. The refractive index distribution in transverse directions inside the stripe groove (15) is controlled by the thickness of the optical guiding layer (5), enabling oscillation of the fundamental transerse mode.
摘要翻译：分布式反馈半导体激光装置，其包括具有条纹槽的电流阻挡结构，和一衍射光栅形成在所述条带沟槽的底部。电流阻挡结构形成在用于激光振荡的活性层，它包括在对一个槽在所述电流阻挡结构的下药水蚀刻蚀刻停止层。条形槽内部在横向方向上的折射率分布由光导层的厚度来控制，从而使基本模式transerse的振荡。

9. 发明授权

EP0433051B1 A semiconductor laser device and a method of producing the same 失效
标题翻译：相同的半导体激光器及其制造方法
公开(公告)号：EP0433051B1
公开(公告)日：1998-07-01
申请号：EP90313536.6
申请日：1990-12-12
申请人： SHARP KABUSHIKI KAISHA
发明人： Konushi, Fumihiro , Nakatsu, Hiroshi , Inoguchi, Kazuhiko , Okumura, Toshiyuki , Seki, Akinori , Takiguchi, Haruhisa , Nakanishi, Chitose , Sugahara, Satoshi , Kudo, Hiroaki
IPC分类号： H01S3/19 , H01S3/25 , H01S3/085 , H01L33/00
CPC分类号： H01S5/227 , H01L21/02392 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L33/0062 , H01S5/12 , H01S5/1228 , H01S5/20 , H01S5/2059 , H01S5/2201 , H01S5/2213 , H01S5/2272 , H01S5/2275 , H01S5/32391 , H01S5/4031 , H01S5/4037

10. 发明公开

EP0473443A3 Buried-stripe type semiconductor laser device 失效
标题翻译：带状条形半导体激光器件
公开(公告)号：EP0473443A3
公开(公告)日：1993-03-03
申请号：EP91307938.0
申请日：1991-08-30
申请人： SHARP KABUSHIKI KAISHA
发明人： Okumura, Toshiyuki , Inoguchi, Kazuhiko , Konushi, Fumihiro , Takiguchi, Haruhisa
IPC分类号： H01S3/19 , H01L33/00
CPC分类号： H01S5/227 , H01L33/0062 , H01S5/2201 , H01S5/32391
摘要： A buried stripe type semiconductor laser device having a mesa stripe whose side faces are {111} facets and having a current confinement structure under epitaxial layers burying the mesa stripe is disclosed. The buried stripe type semiconductor laser device comprises a (100) semiconductor substrate (110) having a stripe-shaped ridge (111) in the direction, a multilayer film of a double hetero structure formed on the upper surface of the stripe-shaped ridge (111). The multilayer film includes a laser oscillating active layer (113) of a smaller width than that of the stripe-shaped ridge. The current confinement means (114) are formed at both sides of the mesa stripe on the semiconductor substrate (110). In addition, a method of fabricating a buried stripe type semiconductor laser device having no raised portion above a mesa stripe of a substrate is disclosed. The laser device can be mounted in position with the epitaxial layer side down, without the mesa stripe being damaged or strained.

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