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1. 发明公开

EP2262066A2 Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体器件和制造半导体器件的方法
公开(公告)号：EP2262066A2
公开(公告)日：2010-12-15
申请号：EP10164884.8
申请日：2010-06-03
申请人： Nichia Corporation
发明人： Michiue, Atsuo , Kawata, Yasuhiro
IPC分类号： H01S5/22
CPC分类号： H01S5/22 , H01S5/0213 , H01S5/0218 , H01S5/0425 , H01S5/2205 , H01S5/32341 , H01S2301/176
摘要： A semiconductor device includes a semiconductor layer stacked on a substrate, a stripe-shaped ridge formed on a surface of the semiconductor layer, and electrode formed on an upper surface of the ridge and a protective film disposed on each side of the ridge. The electrode includes a flat portion having a flat surface substantially parallel to the upper surface of the ridge and sloped portions on both sides of the flat portion with each of the sloped portions having a sloped surface that is sloped with respect to the upper surface of the ridge. The protective film covers a region from a side surface of the ridge to the sloped surface of the sloped portion of the electrode.

2. 发明公开

EP2223399A1 KANTENEMITTIERENDER HALBLEITERLASERCHIP MIT ZUMINDEST EINER STROMBARRIERE 有权
标题翻译：边缘发射半导体激光器芯片与至少一个电流势垒
公开(公告)号：EP2223399A1
公开(公告)日：2010-09-01
申请号：EP08866552.6
申请日：2008-12-15
申请人： OSRAM Opto Semiconductors GmbH
发明人： KÖNIG, Harald , LAUER, Christian , MÜLLER, Martin , REUFER, Martin , MAYER, Bernd
IPC分类号： H01S5/10 , H01S5/20
CPC分类号： H01S5/0425 , H01S3/08072 , H01S5/024 , H01S5/02461 , H01S5/1014 , H01S5/168 , H01S5/2004 , H01S5/2205 , H01S5/2231 , H01S5/3095 , H01S5/4031 , H01S5/4081 , H01S2301/18
摘要： The invention specifies an edge-emitting semiconductor laser chip (1) having - at least one contact strip (2), wherein the contact strip (2) has a width B, - an active zone (14) in which electromagnetic radiation is produced during operation of the semiconductor laser chip (1), - at least two current barriers (4) which are arranged on different sides of the contact strip (2) and extend along the contact strip (2), wherein the greatest distance V between at least one of the current barriers (4) and the contact strip (2) is selected in such a manner that the ratio of the greatest distance V to the width B is V/B > 1.

3. 发明公开

EP1780849A4 SURFACE EMITTING LASER DIODE AND ITS MANUFACTURING METHOD 失效
标题翻译：面发光激光器二极管及其制造方法
公开(公告)号：EP1780849A4
公开(公告)日：2009-07-15
申请号：EP05748559
申请日：2005-06-08
申请人： RICOH KK
发明人： SATO SHUNICHI , ITOH AKIHIRO , JIKUTANI NAOTO
IPC分类号： H01S5/183 , H01S5/042 , H01S5/22 , H01S5/42
CPC分类号： H01S5/343 , H01S5/02284 , H01S5/0425 , H01S5/18311 , H01S5/18347 , H01S5/18383 , H01S5/2205 , H01S5/423
摘要： A surface emitting laser diode comprises a resonator region composed of an active layer which includes at least one quantum well layer emitting a laser beam and a barrier layer and a spacer layer which is provided near the active layer and made of at least one material and provided over a semiconductor substrate and upper and lower reflectors respectively provided over and below the resonator region over the semiconductor substrate. The resonator region and the upper and lower reflectors constitute a mesa structure over the semiconductor substrate. Each of the upper and lower reflectors is a semiconductor distribution Bragg reflector having a periodically varying refractive index and reflecting the incident light by light wave interference. At least a part of each semiconductor distribution Bragg reflector is composed ollf a layer made of Al x Ga 1-x As (0

4. 发明公开

EP1813975A3 Optical semiconductor device and optical semiconductor integrated circuit 有权
标题翻译： Optische Halbleitervorrichtung und integrierte optische Halbleiterschaltung
公开(公告)号：EP1813975A3
公开(公告)日：2007-10-17
申请号：EP07107222.7
申请日：2004-03-30
申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION
发明人： Nunoya, Nobuhiro , Shibata, Yasuo , Fujiwara, Naoki , Kikuchi, Nobuhiro , Tomori, Yuichi
IPC分类号： G02B6/12 , G02B6/42 , H01S5/10
CPC分类号： G02B6/12007 , G02B6/122 , G02B6/131 , G02B6/136 , G02B6/4202 , H01S5/026 , H01S5/06206 , H01S5/06256 , H01S5/0654 , H01S5/068 , H01S5/101 , H01S5/1017 , H01S5/1025 , H01S5/1085 , H01S5/1215 , H01S5/1221 , H01S5/124 , H01S5/125 , H01S5/2205 , H01S5/227 , H01S2301/173
摘要： An integrated optical waveguide comprising a first optical waveguide; a second optical waveguide optically coupled to said first optical waveguide, and having a refractive index different from that of said first optical waveguide; and a groove disposed so as to traverse an optical path of said first optical waveguide, and separated from an interface between said first optical waveguide and said second optical waveguide by a predetermined spacing, wherein the spacing from said interface and the width of said groove are determined such that reflection at a boundary between said first optical waveguide and said second optical waveguide is weakened.
摘要翻译：通过在半导体衬底上组合具有不同折射率和折射率的不同温度依赖性的材料来提供光学半导体器件和光学半导体集成电路。具体地，可以通过具有与半导体激光器的增益区域的温度依赖性不同的材料和/或结构的传播区域来控制振荡波长的温度依赖性。此外，它们可以被配置为具有沿着光波导的波导方向形成的多个界面，使得从第一界面反射的光被从其余界面反射的光减弱。此外，它们可以被配置为具有相对于传播方向倾斜的接口，从而可以减少由于折射率彼此不同的光波导之间的反射和折射引起的波导损耗。

5. 发明公开

EP1780849A1 SURFACE EMITTING LASER DIODE AND ITS MANUFACTURING METHOD 失效
标题翻译：奥氏体不饱和脂肪酸
公开(公告)号：EP1780849A1
公开(公告)日：2007-05-02
申请号：EP05748559.1
申请日：2005-06-08
申请人： Ricoh Company, Ltd.
发明人： Sato, Shunichi , Itoh, Akihiro , Jikutani Naoto
IPC分类号： H01S5/183
CPC分类号： H01S5/343 , H01S5/02284 , H01S5/0425 , H01S5/18311 , H01S5/18347 , H01S5/18383 , H01S5/2205 , H01S5/423
摘要： A surface-emission laser diode comprises a cavity region over a semiconductor substrate and includes an active layer containing at least one quantum well active layer producing a laser light and a barrier layer, a spacer layer is provided in the vicinity of the active layer and formed of at least one material, an upper and lower reflectors are provided at a top part and a bottom part of the cavity region, the cavity region and the upper and lower reflectors form a mesa structure over the semiconductor substrate, the upper and lower reflectors being formed of a semiconductor distributed Bragg reflector having a periodic change of refractive index and reflecting incident light by interference of optical waves, at least a part of the semiconductor distributed Bragg reflector is formed of a layer of small refractive index of Al x Ga 1-x As (0 y Ga 1-y As (0≤y
摘要翻译：表面发射激光二极管包括在半导体衬底上的空腔区域，并且包括含有产生激光和阻挡层的至少一个量子阱活性层的有源层，间隔层设置在有源层附近并形成至少一种材料，上下反射器设置在空腔区域的顶部和底部，空腔区域和上下反射器在半导体衬底上形成台面结构，上反射器和下反射器为由半导体分布布拉格反射体形成，其具有周期性的折射率变化并且通过光波的干涉反射入射光，至少一部分半导体分布布拉格反射器由Al x Ga 1-x的小折射率层形成作为（0

6. 发明授权

EP1284037B1 STREIFENLASERDIODENELEMENT 有权
公开(公告)号：EP1284037B1
公开(公告)日：2007-04-18
申请号：EP00990571.2
申请日：2000-12-22
申请人： Osram Opto Semiconductors GmbH
发明人： GRUBER, Stefan , HEERLEIN, Jörg , UNGER, Peter
IPC分类号： H01S5/223
CPC分类号： H01S5/227 , H01S5/0655 , H01S5/2063 , H01S5/2205 , H01S5/2215 , H01S5/2218 , H01S5/2219 , H01S5/2231
摘要： The invention concerns a stripe laser diode element exhibiting longitudinal direction of propagation in the main direction of propagation of a laser light and having contacts in longitudinal direction of propagation on one surface with the purpose of impressing a current on the element. The surface in defined by edges crosswise to the longitudinal direction. An absorption region is formed in the area of said edges.
摘要翻译：本发明涉及一种条状激光二极管元件，其在激光的主传播方向上展现纵向传播并且在一个表面上具有沿纵向传播的接触，目的是在元件上施加电流。表面由与纵向方向交叉的边缘限定。吸收区域形成在所述边缘的区域中。

7. 发明授权

EP1087480B1 Semiconductor laser device and method of manufacturing the same 有权
标题翻译：一种半导体激光器件及其制造方法
公开(公告)号：EP1087480B1
公开(公告)日：2006-11-15
申请号：EP00308345.8
申请日：2000-09-22
申请人： SANYO ELECTRIC CO., LTD.
发明人： Hiroyama, Ryouji, c/o Sanyo Electric Co., Ltd. , Nomura, Yasuhiko, c/o Sanyo Electric CO., Ltd. , Furusawa, Koutarou, c/o Sanyo Electric CO., Ltd. , Takeuchi, Kunio, c/o Sanyo Electric CO., Ltd. , Okamoto, Shigeyuki, c/o Sanyo Electric CO., Ltd.
IPC分类号： H01S5/223
CPC分类号： H01S5/2231 , H01S5/2205 , H01S5/221 , H01S5/222 , H01S5/2227 , H01S2301/18

8. 发明公开

EP1624544A3 Nitride semiconductor light-Emitting Device 有权
标题翻译： Lichtemitierende nitrid Halbleitervorrichtung
公开(公告)号：EP1624544A3
公开(公告)日：2006-06-07
申请号：EP05251690.3
申请日：2005-03-18
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Hasegawa, Yoshiaki , Yokogawa, Toshiya , Ishibashi, Akihiko
IPC分类号： H01S5/343
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/2004 , H01S5/22 , H01S5/2205 , H01S5/34333 , H01S2301/173
摘要： A nitride semiconductor light-emitting device is provided including: a substrate made of a nitride semiconductor; a semiconductor layer made of a nitride semiconductor containing a p-type impurity, the semiconductor layer being formed as contacting an upper surface of the substrate; a first cladding layer made of a nitride semiconductor containing an impurity of a first conductivity type, the first cladding layer being formed on the semiconductor layer; an active layer formed on the first cladding layer; and a second cladding layer made of a nitride semiconductor containing an impurity of a second conductivity type, the second cladding layer being formed on the active layer.
摘要翻译：提供了一种氮化物半导体发光器件，包括：由氮化物半导体制成的衬底; 由包含p型杂质的氮化物半导体制成的半导体层，所述半导体层形成为与所述衬底的上表面接触; 由包含第一导电类型的杂质的氮化物半导体制成的第一包层，所述第一包层形成在所述半导体层上; 形成在所述第一包覆层上的有源层; 以及由包含第二导电类型的杂质的氮化物半导体制成的第二包层，所述第二包层形成在所述有源层上。

9. 发明公开

EP1624544A2 Nitride semiconductor light-Emitting Device 有权
标题翻译： Lichtemitierende Nitrid Halbleitervorrichtung
公开(公告)号：EP1624544A2
公开(公告)日：2006-02-08
申请号：EP05251690.3
申请日：2005-03-18
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Hasegawa, Yoshiaki , Yokogawa, Toshiya , Ishibashi, Akihiko
IPC分类号： H01S5/343
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/2004 , H01S5/22 , H01S5/2205 , H01S5/34333 , H01S2301/173
摘要： A nitride semiconductor light-emitting device is provided including: a substrate made of a nitride semiconductor; a semiconductor layer made of a nitride semiconductor containing a p-type impurity, the semiconductor layer being formed as contacting an upper surface of the substrate; a first cladding layer made of a nitride semiconductor containing an impurity of a first conductivity type, the first cladding layer being formed on the semiconductor layer; an active layer formed on the first cladding layer; and a second cladding layer made of a nitride semiconductor containing an impurity of a second conductivity type, the second cladding layer being formed on the active layer.
摘要翻译：提供了一种氮化物半导体发光器件，包括：由氮化物半导体制成的衬底; 由包含p型杂质的氮化物半导体制成的半导体层，所述半导体层形成为与所述衬底的上表面接触; 由包含第一导电类型的杂质的氮化物半导体制成的第一包层，所述第一包层形成在所述半导体层上; 形成在所述第一包覆层上的有源层; 以及由包含第二导电类型的杂质的氮化物半导体制成的第二包层，所述第二包层形成在所述有源层上。

10. 发明公开

EP1573827A2 ELECTRONIC DEVICES INCLUDING SEMICONDUCTOR MESA STRUCTURES AND CONDUCTIVITY JUNCTIONS AND METHODS OF FORMING SAID DEVICES 审中-公开
标题翻译：进行生产这些设备的MESA结构化半导体器件和导电连接和方法电子器件
公开(公告)号：EP1573827A2
公开(公告)日：2005-09-14
申请号：EP03814183.4
申请日：2003-12-18
申请人： CREE, INC.
发明人： BERGMANN, Michael, J. , EMERSON, David, T. , ABARE, Amber, C. , HABERERN, Kevin, W.
IPC分类号： H01L33/00 , H01S5/00
CPC分类号： H01L33/145 , H01S5/021 , H01S5/0421 , H01S5/0425 , H01S5/22 , H01S5/2205 , H01S5/2206 , H01S5/2214 , H01S5/2231 , H01S5/2275 , H01S5/32341 , H01S2301/176
摘要： An electronic device including a substrate and a semiconductor mesa on the substrate. Said device mesa having a mesa base adjacent to the substrate, a mesa surface opposite the substrate, and mesa sidewalls between the mesa surface and the mesa base. In addition, the semiconductor mesa has a first conductivity type between the mesa base and a junction, the junction being between the mesa base and the mesa surface, and the semiconductor mesa having a second conductivity type between the junction and the mesa surface. Related manufacturing methods are also defined.

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