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1. 发明授权

EP1320870B1 NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, AND NITRIDE SEMICONDUCTOR DEVICE USING NITRIDE SEMICONDUCTOR SUBSTRATE 有权
标题翻译：氮化物半导体衬底和方法和氮化HALBLEITERVORRICHUNG采用氮化物
公开(公告)号：EP1320870B1
公开(公告)日：2016-11-30
申请号：EP01941084.4
申请日：2001-06-19
申请人： Nichia Corporation
发明人： KOZAKI, Tokuya , KIYOKU, Hiroyuki , CHOCHO, Kazuyuki , MAEGAWA, Hitoshi
IPC分类号： H01L21/00
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01S5/0217 , H01S5/3063 , H01S5/32341 , H01S2304/12

2. 发明公开

EP2816682A3 Semiconductor DBR, semiconductor light-emitting device, solid-state laser, photoacoustic apparatus, image-forming apparatus, and method for manufacturing semiconductor DBR 有权
标题翻译：半导体DBR半导体发光器件，固态激光器，光声设备，图像形成装置及其制造方法半导体DBR
公开(公告)号：EP2816682A3
公开(公告)日：2015-03-11
申请号：EP14171072.3
申请日：2014-06-04
申请人： Canon Kabushiki Kaisha
发明人： Kawashima, Takeshi
IPC分类号： H01S5/183 , H01L33/46 , G03G15/04 , G01N21/17 , G02B1/10 , H01L33/10 , H01S5/187 , H01S3/0941 , H01S5/32 , H01S5/343 , H01S5/42 , H01S3/16 , H01S5/30
CPC分类号： G02B1/14 , G01N21/1702 , G02B1/105 , G03G15/04072 , H01L33/10 , H01L33/105 , H01L33/46 , H01L51/5265 , H01S3/0941 , H01S3/1633 , H01S5/18308 , H01S5/18358 , H01S5/18361 , H01S5/187 , H01S5/3063 , H01S5/3201 , H01S5/34333 , H01S5/423 , H01S2304/04
摘要： A semiconductor distributed Bragg reflector (DBR) (110) including a first multilayer structure (103) including a plurality of first semiconductor layers and one or more second semiconductor layers each interposed between a corresponding pair of the plurality of first semiconductor layers; a second multilayer structure (104) including a plurality of third semiconductor layers and one or more second semiconductor layers each interposed between a corresponding pair of the plurality of third semiconductor layers; and a protection layer (105) interposed between the first multilayer structure and the second multilayer structure. The semiconductor layer has a lower decomposition temperature than the first semiconductor layer. The third semiconductor layer has a lower decomposition temperature than the second semiconductor layer.
摘要翻译：一种半导体分布布拉格反射器（DBR）（110）包括：包括第一半导体层和一个或多个第二半导体层上的多个一对相应的第一半导体层的多个之间的每个插入的第一多层结构（103）; 的第二多层结构（104）包括第三半导体层和一个或多个第二半导体层的一对相应的第三半导体层的多个之间的每个插入的多元性; 和保护层（105）第一多层结构与第二多层结构之间。所述半导体层具有比所述第一半导体层低的分解温度。第三半导体层具有比所述第二半导体层低的分解温度。

3. 发明公开

EP2728684A1 GALLIUM NITRIDE SEMICONDUCTOR LASER ELEMENT AND METHOD FOR MANUFACTURING GALLIUM NITRIDE SEMICONDUCTOR LASER ELEMENT 审中-公开
标题翻译：玻璃ID ID ITE MENT MENT MENT MENT MENT MENTS EN EN EN EN MENTS MENTS MENTS MENTS MENTS MENTS MENTS MENTS MENTS MENTS MENTS MENTS MENTS MENTS MENTS MENTS MENTS MENTS MENTS MENTS MENTS
公开(公告)号：EP2728684A1
公开(公告)日：2014-05-07
申请号：EP12805352.7
申请日：2012-03-06
申请人： Sumitomo Electric Industries, Ltd. , Sony Corporation
发明人： KUMANO Tetsuya , UENO Masaki , KYONO Takashi , ENYA Yohei , YANASHIMA Katsunori , TASAI Kunihiko , NAKAJIMA Hiroshi
IPC分类号： H01S5/20 , H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/3063 , H01S5/3202 , H01S2304/04
摘要： Provided are a gallium nitride-based semiconductor laser device with reduced threshold current and a method for fabricating the gallium nitride-based semiconductor laser device. The gallium nitride-based semiconductor laser device is provided with an n-type cladding layer 15b, an n-side light guide layer 29, an active layer 27, a p-side light guide layer 31, and a p-type cladding layer 23. A lasing wavelength of the active layer 27 is not less than 400 nm and not more than 550 nm. The n-type cladding layer 15b is In x Al y Ga 1-x-y N (0 x Al y Ga 1-x-y N (0 ≤ x
摘要翻译：提供了具有降低的阈值电流的氮化镓基半导体激光器件以及用于制造氮化镓基半导体激光器件的方法。氮化镓系半导体激光装置具备n型包覆层15b，n侧导光层29，有源层27，p侧导光层31，p型包覆层23 有源层27的激光波长不小于400nm且不大于550nm。 n型包覆层15b为In x Al y Ga 1-xy N（0

4. 发明公开

EP2198494A1 WAVEGUIDE DEVICE HAVING DELTA DOPED ACTIVE REGION 有权转让
标题翻译：具有δ掺杂的活动区纤维排列
公开(公告)号：EP2198494A1
公开(公告)日：2010-06-23
申请号：EP07866085.9
申请日：2007-12-28
申请人： Agere Systems, Inc.
发明人： FREUND, Joseph, Michael
IPC分类号： H01S3/14
CPC分类号： H01S5/305 , H01S5/3063 , H01S5/3077 , H01S5/3081 , H01S5/3086 , H01S5/32341
摘要： Embodiments of the invention include a laser structure having a delta doped active region for improved carrier confinement. The laser structure includes an n-type cladding layer, an n-type waveguide layer formed adjacent the n-type cladding layer, an active region formed adjacent the n-type waveguide layer, a p-type waveguide layer formed adjacent the active region, and a p-type cladding layer formed adjacent the p- type waveguide layer. The laser structure is configured so that a p-type dopant concentration increases across the active region from the n-type side of the active region to the p-type side of the active region and/or an n-type dopant concentration decreases across the active region from the n-type side of the active region to the p- type side of the active region. The delta doped active region provides improved carrier confinement, while eliminating the need for blocking layers, thereby reducing stress on the active region caused thereby.

5. 发明公开

EP1883141A1 LD oder LED mit Übergitter-Mantelschicht 有权
标题翻译： LD oder LED mitÜbergitter-Mantelschicht
公开(公告)号：EP1883141A1
公开(公告)日：2008-01-30
申请号：EP07013822.7
申请日：2007-07-13
申请人： Osram Opto Semiconductors GmbH
发明人： Eichler, Christoph, Dr. , Lell, Alfred , Miler, Andreas , Schillgalies, Marc
IPC分类号： H01S5/343 , H01S5/042 , H01S5/20 , H01S5/32
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01L2924/0002 , H01S5/0422 , H01S5/2009 , H01S5/3063 , H01S5/3213 , H01S5/3215 , H01S5/3216 , H01S5/3218 , H01L2924/00
摘要： Die Halbleiter-Schichtstruktur umfasst ein Übergitter (9) aus gestapelten Schichten (9a, 9b) von III-V Verbindungshalbleitern eines ersten (a) und zumindest eines zweiten Typs (b). Im Übergitter (9) benachbarte Schichten unterschiedlichen Typs unterscheiden sich in der Zusammensetzung in mindestens einem Element, zumindest zwei Schichten eines gleichen Typs weisen einen unterschiedlichen Gehalt (c Al , c In ) an dem mindestens einen Element auf, der Gehalt (c Al , c In ) an dem mindestens einen Element innerhalb einer Schicht (9a, 9b) des Übergitters (9) ist gradiert und die Schichten (9a, 9b) des Übergitters (9) enthalten Dotierstoffe in vorgegebenen Konzentrationen, wobei das Übergitter (9) Schichten (9a, 9b) aufweist, die mit unterschiedlichen Dotierstoffen dotiert sind. Auf diese Weise können die elektrischen, optischen und epitaktische Eigenschaften des Übergitters (9) bestmöglich an gegebene Erfordernisse, insbesondere epitaktische Randbedingungen, angepasst werden.
摘要翻译：可用于光电子部件的半导体层结构包括第一和第二类型（b）的交替堆叠层中的超晶格（9）。堆叠层是III-V连接半导体。不同类型的超格子邻接层的元素不同。在超晶格中，相同类型的两层在元件处具有不同的含量（C A1，C In）。内容放置在格子层内的元素上。超晶格层以给定浓度掺杂不同的掺杂物质。可用于光电子部件的半导体层结构包括第一和第二类型（b）的交替堆叠层中的超晶格（9）。堆叠层是III-V连接半导体。不同类型的超格子邻接层的元素不同。在超晶格中，相同类型的两层在元件处具有不同的含量（C A1，C In）。内容放置在格子层内的元素上。超晶格层以给定浓度掺杂不同的掺杂物质。超晶格具有（In x Al y Ga 1-x-y和In w Al z Ga 1-w-zN的交替堆叠层，其中0 = x，y，w，z = 1，x + y = 1，w + z = 1 ），（In xAl yG 1-x-yP和In w Al z Ga 1-w-z，其中0 = x，y，w，z = 1）或（In x Al y Ga 1-x-y As和In w Ga 1-w- z 0，其中0 = x，y，w，z = 1，x + y = 1，w + z = 1）。在超晶格的单层中，在半导体层结构内分配垂直位置，并且层中的元素的内容以给定方式取决于其在结构内的垂直位置。内容的依赖性是针对第一类的层通过第一函数，对于第二类的层通过第二函数和/或通过公共函数针对所有层而言的。第一，第二和/或共同功能是命名函数或其部分的可变函数，单调上升/下降函数，线性函数，多项式函数，指数函数，对数函数，周期函数和/或超位置。该元素的内容在超晶格的层内是恒定的。不同类型的层具有不同的厚度。光电子元件包含独立的权利要求。

6. 发明公开

EP1473781A2 Semiconductor light-emitting device and production method thereof 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：EP1473781A2
公开(公告)日：2004-11-03
申请号：EP04016420.4
申请日：1995-07-20
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Kidoguchi, Isao , Adachi, Hideto , Ishibashi, Akihiko , Ohnaka, Kiyoshi , Ban, Yuzaburo , Kubo, Minoru
IPC分类号： H01L33/00
CPC分类号： H01L33/642 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/81 , H01L33/007 , H01L33/025 , H01L33/32 , H01L33/325 , H01L2224/73204 , H01L2224/83192 , H01L2933/0075 , H01S5/0213 , H01S5/02236 , H01S5/0224 , H01S5/02272 , H01S5/0422 , H01S5/162 , H01S5/2059 , H01S5/2063 , H01S5/2231 , H01S5/305 , H01S5/3063 , H01S5/3086 , H01S5/32341 , H01S5/327
摘要： A semiconductor light-emitting device with a double hetero structure, including: an active layer made of Ga 1-x In x N (0 ≤ x ≤ 0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so as to sandwich the active layer.
摘要翻译：一种具有双异质结构的半导体发光器件，包括：由掺杂有p型杂质和n型杂质的Ga1-xInxN（0≤x≤0.3）制成的有源层; 以及设置为夹住有源层的第一和第二包层。

7. 发明公开

EP1246264A2 Nitride semiconductor device 审中-公开
标题翻译：氮化物半导体器件
公开(公告)号：EP1246264A2
公开(公告)日：2002-10-02
申请号：EP02006937.3
申请日：2002-03-26
申请人： Pioneer Corporation
发明人： Takahashi, Hirokazu, Pioneer Corporation , Ota, Hiroyuki, Pioneer Corporation , Watanabe, Atsushi, Pioneer Corporation
IPC分类号： H01L33/00 , H01S5/323
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/40 , H01S5/0425 , H01S5/3063 , H01S5/34333 , H01S2304/00
摘要： A nitride semiconductor device having high electrode contact properties is disclosed. The nitride semiconductor device includes a semiconductor layer made of a group III nitride semiconductor, and a metal electrode for supplying the semiconductor layer with a carrier. The device has a first contact layer made of a group III nitride semiconductor (Al x Ga 1-x ) 1-y In y N (0≤x≤1, 0 x' Ga 1-x' N (0≤x'≤1) and laminated between the first contact and the metal electrode.

8. 发明公开

EP0924822A2 Vertical cavity surface emitting semiconductor lasers and their method of fabrication 有权
标题翻译： Herstellungsverfahren einesoberflächenemittierendenHalbleiterlasers mit vertikalem Resonator
公开(公告)号：EP0924822A2
公开(公告)日：1999-06-23
申请号：EP98308682.8
申请日：1998-10-23
申请人： Xerox Corporation
发明人： Sun, Decai , Floyd, Philip D.
IPC分类号： H01S3/085
CPC分类号： H01S5/18311 , H01S5/18308 , H01S5/18338 , H01S5/18355 , H01S5/2068 , H01S5/3063 , Y10S438/96
摘要： The present invention relates to a vertical cavity surface emitting laser with an accurately defined and controlled aperture (134) which directs the current path within the laser. Specifically, the oxide regions (106) surrounding the aperture are formed by a pre-oxidation layer disordering process which controls the regions within which oxidation can occur. The present invention allows for the manufacture of highly compact lasers with reproducible optical and electrical characteristics.
摘要翻译：本发明涉及一种垂直腔表面发射激光器，其具有精确限定和受控的孔径（134），其引导激光器内的电流路径。具体地，围绕孔的氧化物区域（106）通过预氧化层无序化处理形成，该预氧化层无序化处理控制可发生氧化的区域。本发明允许制造具有可再现的光学和电学特性的高度紧凑的激光器。

9. 发明公开

EP0665618A1 Stepped substrate semiconductor laser for emitting light at slant portion 失效
标题翻译：半导体激光器用于从所述倾斜部分的光发射台阶衬底。
公开(公告)号：EP0665618A1
公开(公告)日：1995-08-02
申请号：EP94118358.4
申请日：1994-11-22
申请人： FUJITSU LIMITED
发明人： Anayama, Chikashi, Fujitsu Limited , Fukushima, Takeshiro, Fujitsu Limited , Furuya, Akira, Fujitsu Limited
IPC分类号： H01S3/19
CPC分类号： B82Y20/00 , H01S5/2238 , H01S5/305 , H01S5/3063 , H01S5/3077 , H01S5/3081 , H01S5/3203 , H01S5/3211 , H01S5/3213 , H01S5/34326 , H01S2301/173
摘要： In a slant plane light emission type semiconductor laser whose laser structure can be formed on a stepped substrate by a series of MOCVD growth processes, the width of the active layer (5) at the slant portion (F2 7b) is set to 2.5 µm or less or the angle between the flat portion (F1a, F3a; 7a) and slant portion is set to 12 degrees or less. The semiconductor laser having such a structure can emit light having a single peak at the near field.
摘要翻译：倾斜的平面中的光发射型半导体激光器，其激光器结构可以装在阶梯基材通过一系列MOCVD生长过程的，有源层的宽度（5）在倾斜部分（F2 7B）被设定为2.5微米地形成或更少，或平坦部（F1a的，F3A;图7a）之间的角度和倾斜部被设定为12度或更小。经审查的半导体激光器的结构，能够发射具有在近场的单峰。

10. 发明公开

EP3336981A1 SEMICONDUCTOR MULTILAYER FILM REFLECTING MIRROR, VERTICAL CAVITY LIGHT-EMITTING ELEMENT USING THE REFLECTING MIRROR, AND METHODS FOR MANUFACTURING THE REFLECTING MIRROR AND THE ELEMENT 有权转让
公开(公告)号：EP3336981A1
公开(公告)日：2018-06-20
申请号：EP17206519.5
申请日：2017-12-11
申请人： Meijo University , STANLEY ELECTRIC CO., LTD.
发明人： TAKEUCHI, Tetsuya , AKASAKI, Isamu , AKAGI, Takanobu
IPC分类号： H01S5/183 , H01S5/32 , H01S5/323 , H01S5/30
CPC分类号： H01S5/18377 , H01L21/02365 , H01S5/026 , H01S5/18341 , H01S5/18361 , H01S5/18369 , H01S5/3063 , H01S5/3201 , H01S5/32341 , H01S2304/04
摘要： Provided is a semiconductor multilayer film reflecting mirror formed by alternately repeating a first nitride film containing In (indium) and a second nitride film not containing In. The reflecting mirror (15) includes an inter-film transition layer (15C) between the first and second nitride films, the composition of which is varied from the composition of the first nitride film to the composition of the second nitride film. The inter-film transition layer has a first transition layer (15C1) formed on the first nitride film and containing In and Al (aluminum), and a second transition layer (15C2) formed on the first transition layer and containing Al but not containing In. In the first transition layer, the percentages of In and Al are decreased from the first nitride film to the second transition layer, and the percentage of In in the first transition layer starts to decrease at a same or closer position to the first nitride film than the percentage of Al. The mirror is a DBR reflecting in the blue and reducing the number of micro-cracks in the device. The DBR (15) may be integrated into a VCSEL (10), the VCSEL comprising a GaN substrate (11), a GaN buffer layer (13), the DBR (15), a p-clad layer (17), an active layer (20), an upper clad layer p-AlGaN (21), a p-GaN layer (23) and a p-GaN contact layer (25). The first nitride film (15A) may be made from AlInN, the first transition layer (15C1) from AlGaInN, the second transition layer (15C2) from AlGaN and the second nitride film (15B) from GaN.

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