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1. 发明公开

EP2224558A4 SEMICONDUCTOR LASER ELEMENT 有权
标题翻译： HALBLEITERLASERELEMENT
公开(公告)号：EP2224558A4
公开(公告)日：2013-05-22
申请号：EP08847356
申请日：2008-10-31
申请人： NICHIA CORP
发明人： SONOBE SHINYA , MASUI SHINGO
IPC分类号： H01S5/22 , H01S5/028 , H01S5/042 , H01S5/16 , H01S5/20 , H01S5/32 , H01S5/343
CPC分类号： H01S5/168 , B82Y20/00 , H01S5/0021 , H01S5/028 , H01S5/0283 , H01S5/0425 , H01S5/166 , H01S5/2086 , H01S5/2214 , H01S5/222 , H01S5/3214 , H01S5/34333 , H01S2301/176 , H01S2301/18 , H01S2304/04

2. 发明公开

EP2224559A3 Nitride semiconductor laser device 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：EP2224559A3
公开(公告)日：2012-12-19
申请号：EP10155067.1
申请日：2010-03-01
申请人： Nichia Corporation
发明人： Miyoshi, Takashi , Okada, Takeshi
IPC分类号： H01S5/22 , H01S5/34 , H01S5/323
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0655 , H01S5/222 , H01S5/34333 , H01S2301/176
摘要： The nitride semiconductor laser device includes a substrate (10), a nitride semiconductor layer having a first nitride semiconductor layer (21), an active layer (22), and a second nitride semiconductor layer (23) stacked in this order on the substrate (10), and a ridge (24) provided on a surface of the nitride semiconductor layer. The surface of the nitride semiconductor layer includes a generally flat part and first and second grooves (25) which extend along the ridge (24) in a resonator direction, the first groove being formed continuous to a first side surface of the ridge (24), the second groove being formed continuous to a second side surface of the ridge which is opposite to the first side surface.

3. 发明公开

EP2186172A2 MICRORESONATOR SYSTEM AND METHODS OF FABRICATING THE SAME 审中-公开
标题翻译： MIKRORESONATORSYSTEM及其制造方法
公开(公告)号：EP2186172A2
公开(公告)日：2010-05-19
申请号：EP08794893.1
申请日：2008-07-30
申请人： Hewlett-Packard Development Company, L.P.
发明人： TAN, Michael , WANG, Shih-Yuan , STEWART, Duncan , FATTAL, David
IPC分类号： H01S3/08 , H01S3/109
CPC分类号： H01S5/1075 , B82Y20/00 , G02B6/12007 , H01S5/021 , H01S5/0215 , H01S5/026 , H01S5/0422 , H01S5/1032 , H01S5/1042 , H01S5/2063 , H01S5/222 , H01S5/3211 , H01S5/34306
摘要： Various embodiments of the present invention are related to microresonator systems that can be used as a laser, a modulator, and a photodetector and to methods for fabricating the microresonator systems. In one embodiment, a microresonator system (100) comprises a substrate (106) having a top surface layer (104), at least one waveguide (114,116) embedded within the substrate (106), and a microdisk (102) having a top layer (118), an intermediate layer (122), a bottom layer (120), current isolation region (128), and a peripheral annular region (124,126). The bottom layer (120) of the microdisk (102) is in electrical communication with the top surface layer (104) of the substrate (106) and is positioned so that at least a portion of the peripheral annular region (124,126) is located above the at least one waveguide (114,116). The current isolation region (128) is configured to occupy at least a portion of a central region of the microdisk and has a relatively lower refractive index and relatively larger bandgap than the peripheral annular region.

4. 发明授权

EP1087480B1 Semiconductor laser device and method of manufacturing the same 有权
标题翻译：一种半导体激光器件及其制造方法
公开(公告)号：EP1087480B1
公开(公告)日：2006-11-15
申请号：EP00308345.8
申请日：2000-09-22
申请人： SANYO ELECTRIC CO., LTD.
发明人： Hiroyama, Ryouji, c/o Sanyo Electric Co., Ltd. , Nomura, Yasuhiko, c/o Sanyo Electric CO., Ltd. , Furusawa, Koutarou, c/o Sanyo Electric CO., Ltd. , Takeuchi, Kunio, c/o Sanyo Electric CO., Ltd. , Okamoto, Shigeyuki, c/o Sanyo Electric CO., Ltd.
IPC分类号： H01S5/223
CPC分类号： H01S5/2231 , H01S5/2205 , H01S5/221 , H01S5/222 , H01S5/2227 , H01S2301/18

5. 发明授权

EP1033796B1 Semiconductor laser and a manufacturing method for the same 有权
标题翻译：半导体激光器及相关的生产方法
公开(公告)号：EP1033796B1
公开(公告)日：2004-12-08
申请号：EP00301629.2
申请日：2000-02-29
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Fukuhisa, Toshiya , Manno, Masaya , Yoshikawa, Akio
IPC分类号： H01S5/32 , H01L33/00
CPC分类号： H01S5/2231 , H01S5/222 , H01S5/2226

6. 发明公开

EP1283574A2 Semiconductor laser element 有权
标题翻译： Halbleiterlaserelement
公开(公告)号：EP1283574A2
公开(公告)日：2003-02-12
申请号：EP02013150.4
申请日：2002-06-14
申请人： Sharp Kabushiki Kaisha
发明人： Matsumoto, Mitsuhiro
IPC分类号： H01S5/223
CPC分类号： H01S5/2231 , H01S5/2004 , H01S5/222
摘要： There is provided a semiconductor laser element, which has a small capacitance outside a ridge portion and high response speed and is able to effect pulse oscillation with a satisfactory pulse waveform. On a GaAs substrate 101, there are provided an n-type buffer layer 102, an n-type first clad layer 103, an MQW active layer 104, a p-type second clad layer 105, a p-type etching stop layer 106 that has an energy bandgap smaller than that of this second clad layer 105, a p-type third clad layer 107 that constitutes a ridge portion and a p-type protective layer 108. On both sides in the widthwise direction of the ridge portion are laminated a p-type spacer layer 109, an n-type current light confining layer 110, an n-type current confining layer 111 and a p-type flattening layer 112. On these layers is laminated a p-type contact layer 113. A depletion layer spreads into the spacer layer 109 when a bias voltage is applied. Therefore, a capacitance between the spacer layer 109 and the current light confining layer 110 is reduced, and a response speed during the pulse oscillation of the semiconductor laser element becomes fast.
摘要翻译：提供了一种半导体激光元件，其在脊部外部具有小的电容并且响应速度高，并且能够以令人满意的脉冲波形来实现脉冲振荡。在GaAs衬底101上，设置有n型缓冲层102，n型第一覆盖层103，MQW有源层104，p型第二覆盖层105，p型蚀刻停止层106，p型蚀刻停止层106 具有小于该第二包层105的能量带隙，构成脊部的p型第三包层107和p型保护层108.在脊部的宽度方向的两侧层叠有 p型间隔层109，n型电流限制层110，n型电流限制层111和p型平坦化层112.在这些层上层叠有p型接触层113.耗尽层当施加偏置电压时，它们扩散到间隔层109中。因此，间隔层109和电流限制层110之间的电容减小，半导体激光元件的脉冲振荡期间的响应速度变快。

7. 发明公开

EP1035624A2 Semiconductor laser and a manufacturing method for the same 有权
标题翻译：半导体激光器和生产工艺
公开(公告)号：EP1035624A2
公开(公告)日：2000-09-13
申请号：EP00301607.8
申请日：2000-02-29
申请人： Matsushita Electronics Corporation
发明人： Fukuhisa, Toshiya , Yoshikawa, Akio
IPC分类号： H01S5/223 , H01S5/323
CPC分类号： B82Y20/00 , H01S5/209 , H01S5/222 , H01S5/2231 , H01S5/305 , H01S5/34326
摘要： A semiconductor laser, includes: a first cladding layer; an active layer that is formed on top of the first cladding layer; a second cladding layer that is formed on top of the active layer and has a different type of conductivity to the first cladding layer; an etch-stop layer that is formed on top of the second cladding layer and has a same type of conductivity as the second cladding layer; and a light-confining construction that is formed on top of the etch-stop layer by an etching process. The etch-stop layer has a surface part that contacts the light-confining construction. This surface part is composed of an (Al x Ga 1-x ) y In 1-y P semiconductor, where 0.2≤x

9. 发明授权

EP0616399B1 Laser diode and process for producing the same 失效
标题翻译：激光二极管和相关联的制造方法
公开(公告)号：EP0616399B1
公开(公告)日：1999-05-12
申请号：EP94301818.4
申请日：1994-03-15
申请人： Mitsubishi Chemical Corporation
发明人： Shimoyama, Kenji , Fujimori, Toshinari , Nagao, Satoru , Gotoh, Hideki
IPC分类号： H01S3/19 , H01L33/00
CPC分类号： H01S5/2231 , H01S5/0211 , H01S5/2207 , H01S5/221 , H01S5/222 , H01S5/32325

10. 发明公开

EP0697756A2 A semiconductor laser device and a method for producing the same 失效
标题翻译：半导体激光装置及其制造方法
公开(公告)号：EP0697756A2
公开(公告)日：1996-02-21
申请号：EP95117077.8
申请日：1991-09-23
申请人： SHARP KABUSHIKI KAISHA
发明人： Matsumoto,Mitsuhiro , Kazuaki, Sasaki , Kondo,Masaki , Takeoka,Tadashi , Nakatsu,Hiroshi , Watanabe,Masanori , Yamamoto,Osamu , Yamamoto,Saburo
IPC分类号： H01S3/085 , H01S3/025 , H01L33/00
CPC分类号： H01S5/164 , H01L33/0062 , H01S5/0201 , H01S5/0202 , H01S5/028 , H01S5/0281 , H01S5/0282 , H01S5/1064 , H01S5/204 , H01S5/2211 , H01S5/222 , H01S5/3201 , H01S5/32316 , H01S5/32325 , H01S2301/18
摘要： A semiconductor laser wafer is cleaved to form bar shaped wafers (51). The wafers are placed in a support jig (111) and the support jig is then introduced into a growth chamber. A semiconductor layer is grown on the cleavage planes of the semiconductor laser bars.
摘要翻译：半导体激光器晶片被劈开以形成条形晶片（51）。将晶片放置在支撑夹具（111）中，然后将支撑夹具引入生长室。在半导体激光棒的解理平面上生长半导体层。

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