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1. 发明公开

EP3175013A1 THIN FILM DEVICE FABRICATION METHODS AND APPARATUS 审中-公开
标题翻译：德黑兰国家德黑兰
公开(公告)号：EP3175013A1
公开(公告)日：2017-06-07
申请号：EP15747451.1
申请日：2015-07-31
申请人： Katholieke Universiteit Leuven
发明人： LOCQUET, Jean-Pierre , SU, Chen-Yi
IPC分类号： C23C14/00 , C23C14/54 , C23C14/58
CPC分类号： H01L21/67253 , C23C14/0021 , C23C14/548 , C23C14/5806 , C30B23/002 , C30B23/02 , C30B29/16 , C30B29/20 , C30B33/02 , H01L21/02178 , H01L21/022 , H01L21/02318
摘要： A deposition device for providing a thin film on a substrate. The device comprises a material source for providing at least one first metallic element which does not re-evaporate substantially from the substrate under particular growth conditions, at least one second metallic element or metal based molecule which does re-evaporate substantially from the substrate under the same growth conditions, and a component suitable for forming an at least one first compound with the at least one first metallic element and an at least one second compound with the at least one second metallic element or metal based molecule. The device comprises a controller configured to control the growth conditions, and the amounts of the at least one first metallic element, the at least one second metallic element or metal based molecule, and the component so as to obtain a substantially stoichiometric thin film.
摘要翻译：一种用于在衬底（130）上提供薄膜的沉积装置（100）。该装置包括用于提供在特定生长条件下基本上不从基底（130）再蒸发的至少一种第一金属元素的材料源（110），至少一种第二金属元素或金属基分子在相同的生长条件下基本上从基底（130）和适于与至少一种第一金属元素和至少一种第二化合物形成至少一种第一化合物的组分与至少一种第二金属元素或金属基分子。该装置包括控制器（120），其被配置为控制生长条件，以及至少一个第一金属元件，至少一个第二金属元素或金属基分子的量以及该组分的量，以获得基本上化学计量的薄电影。

2. 发明公开

EP2626442A4 DIELECTRIC FILM FORMATION DEVICE AND DIELECTRIC FILM FORMATION METHOD 有权
标题翻译：器件的形成介电薄膜和方法用于形成介电薄膜的
公开(公告)号：EP2626442A4
公开(公告)日：2017-01-04
申请号：EP11830637
申请日：2011-10-03
申请人： ULVAC INC
发明人： KIMURA ISAO , JINBO TAKEHITO , KOBAYASHI HIROKI , ENDOU YOUHEI , OONISHI YOUHEI
IPC分类号： C23C14/34 , C23C14/02 , C23C14/08 , C23C14/35 , C30B23/00 , C30B23/02 , C30B23/06 , C30B29/32
CPC分类号： C23C14/3464 , C23C14/024 , C23C14/088 , C23C14/35 , C30B23/002 , C30B23/025 , C30B23/063 , C30B29/32
摘要： A dielectric film forming apparatus and a method for forming a dielectric film so as to form a dielectric film with a (100) / (001) orientation. A dielectric film forming apparatus 10 includes a deposition preventive plate heating portion 19 that heats a deposition preventive plate 34 disposed in a position where particles discharged from a target 21 adhere. Sputtering gas is introduced from a sputtering gas introduction unit 14 into a vacuum chamber 11. The deposition preventive plate 34 is heated to a temperature higher than a film forming temperature so as to emit vapor from a thin film adhered to the deposition preventive plate 34. After a seed layer is formed on a substrate 31, the substrate 31 is heated to the film forming temperature, and AC voltage is applied to the target 21 from a power supply 13 and then, the target 21 is sputtered so as to form a dielectric film on the substrate 31.
摘要翻译：一种电介质成膜装置和用于形成电介质膜，从而形成介电膜，具有（100）/（001）取向的方法。一种电介质成膜装置10包括防附着板加热部19个加热做了防附着板34在从目标21附着排出颗粒的位置处。溅射气体从溅射气体导入部14导入到真空室11的防附着板34被加热到比成形温度，以便从附着在防附着板34的薄膜发射蒸气的膜更高的温度下一个籽晶层上的基板31形成之后，基板31被加热到成膜温度，和AC电压从电源13施加到目标21，然后，靶21被溅射，以便形成电介质电影在基板31日

3. 发明授权

EP2171134B1 FABRICATION OF SIC SUBSTRATES WITH LOW WARP AND BOW 有权
标题翻译：具有低翘曲和弯曲基板碳化硅生产
公开(公告)号：EP2171134B1
公开(公告)日：2016-10-19
申请号：EP08772027.2
申请日：2008-06-26
申请人： II-VI Incorporated
发明人： WU, Ping , ZWIEBACK, Ilya , GUPTA, Avinesh, K. , SEMENAS, Edward
IPC分类号： C30B23/00 , C30B23/06 , C30B33/02 , C30B29/36
CPC分类号： C30B29/36 , C30B23/002 , C30B23/066 , C30B33/02

4. 发明授权

EP2230332B1 SILICON CARBIDE SINGLE CRYSTAL INGOT, AND SUBSTRATE AND EPITAXIAL WAFER OBTAINED FROM THE SILICON CARBIDE SINGLE CRYSTAL INGOT 有权转让
标题翻译：单晶 - 硅 - 硅锭和从单晶硅锭收集及衬底外延片
公开(公告)号：EP2230332B1
公开(公告)日：2016-10-12
申请号：EP09702431.9
申请日：2009-01-14
申请人： Nippon Steel & Sumitomo Metal Corporation
发明人： OHTANI, Noboru , KATSUNO, Masakazu , TSUGE, Hiroshi , NAKABAYASHI, Masashi , FUJIMOTO, Tatsuo
IPC分类号： C30B29/36 , C30B23/00 , H01L21/02 , H01L21/04 , H01L29/66
CPC分类号： H01L21/0262 , C30B23/00 , C30B23/002 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02447 , H01L21/02529 , H01L21/0254 , H01L21/02634 , H01L21/046 , H01L21/0495 , H01L29/6606 , Y10T428/24355

5. 发明公开

EP2575161A3 Method of growing semiconductor crystal 有权
标题翻译：一种用于生长半导体晶体的方法
公开(公告)号：EP2575161A3
公开(公告)日：2013-06-26
申请号：EP12199368.7
申请日：2004-03-18
申请人： Japan Science and Technology Agency
发明人： Suda, Jun , Matsunami, Hiroyuki , Onojima, Norio
IPC分类号： H01L21/203 , H01L21/02 , C30B23/02 , C30B29/40
CPC分类号： C30B29/406 , C30B23/002 , C30B29/403 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/02631 , H01L21/02658 , H01L21/02661
摘要： SiC is a very stable substance, and it is difficult to control the condition of a SiC surface to be suitable for crystal growth in conventional Group III nitride crystal growing apparatuses. This problem is solved as follows. The surface of a SiC substrate 1 is rendered into a step-terrace structure by performing a heating process in an atmosphere of HCl gas. The surface of the SiC substrate 1 is then treated sequentially with aqua regia, hydrochloric acid, and hydrofluoric acid. A small amount of silicon oxide film formed on the surface of the SiC substrate 1 is etched so as to form a clean SiC surface 3 on the substrate surface. The SiC substrate 1 is then installed in a high-vacuum apparatus and the pressure inside is maintained at ultrahigh vacuum (such as 10 -6 to 10 -8 Pa). In the ultrahigh vacuum state, a process of irradiating the surface with a Ga atomic beam 5 at time t1 at temperature of 800°C or lower and performing a heating treatment at 800°C or higher is repeated at least once. The temperature is then set to the growth temperature of an AIN film, and the SiC substrate surface 3 is initially irradiated with A1 atoms 8a in ultrahigh vacuum state, followed by the feeding of N atoms 8b.

6. 发明公开

EP2563950A1 METHOD FOR CONTROLLED GROWTH OF SILICON CARBIDE AND STRUCTURES PRODUCED BY SAME 有权
标题翻译：方法用于硅的的控制繁育，从而生产结构
公开(公告)号：EP2563950A1
公开(公告)日：2013-03-06
申请号：EP11718854.0
申请日：2011-04-28
申请人： Cree, Inc.
发明人： LEONARD, Robert Tyler , HOBGOOD, Hudson M. , THORE, William A.
IPC分类号： C30B29/36 , C30B23/00
CPC分类号： H01L29/1608 , C30B23/002 , C30B23/025 , C30B29/36
摘要： A method for controlled growth of silicon carbide and structures produced by the method are disclosed. A crystal of silicon carbide (SiC) can be grown by placing a sacrificial substrate in a growth zone with a source material. The source material may include a low-solubility impurity. SiC is then grown on the sacrificial substrate to condition the source material. The sacrificial substrate is then replaced with the final substrate, and SiC is grown on the final substrate. A single crystal of silicon carbide is produced, wherein the crystal of silicon carbide has substantially few micropipe defects. Such a crystal may also include a substantially uniform concentration of the low-solubility impurity, and may be used to make wafers and/or SiC die.

7. 发明授权

EP2284297B1 Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminium, indium, gallium) nitride ((AI, In,Ga)N) substrates for opto-electronic and electronic devices 有权
标题翻译：一种用于光电子和电子设备上的独立式的实现改善的外延质量（表面结构和缺陷密度）（铝，铟，镓）氮化物（（人，In，Ga）N系）衬底的方法
公开(公告)号：EP2284297B1
公开(公告)日：2012-08-22
申请号：EP10011760.5
申请日：2001-06-27
申请人： Cree, Inc.
发明人： Flynn, Jeffrey, S. , Brandes, Georges, R. , Vaudo, Robert, P. , Keogh, David, M. , Xu, Hueping , Landini, Barbara E.
IPC分类号： C30B23/02 , C30B23/04 , C30B28/12 , C30B28/14 , C30B29/58 , C23C14/06 , C23C14/24 , C23C16/30
CPC分类号： C30B25/02 , C30B23/002 , C30B23/02 , C30B25/00 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L21/02634 , H01L21/02636 , H01L21/02658 , H01L33/32 , H01S5/1228 , H01S5/1231 , H01S5/2095 , H01S5/32341

8. 发明公开

EP2264223A3 Micropipe-free silicon carbide and related method of manufacture 审中-公开
标题翻译：自由微管 - 碳化硅和过程及其制备
公开(公告)号：EP2264223A3
公开(公告)日：2011-10-26
申请号：EP10182708.7
申请日：2007-09-13
申请人： Cree, Inc.
发明人： Basceri, Cem , Balkas, Cengiz , Khlebnikov, Yuri , Khlebnikov, Igor , Hobgood, Hudson McD , Silan, Murat N , Carter, Calvin H., Jr. , Balakrishna, Vijay , Leonard, Robert T , Powell, Adrian R , Tsvetkov, Valeri , Jenny, Jason R
IPC分类号： C30B23/00 , C30B29/36 , H01L21/20 , H01L21/02
CPC分类号： H01L29/1608 , C30B23/002 , C30B23/005 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/0254 , H01L21/02631 , H01L21/02634 , Y10T428/21
摘要： A method of growing a single-crystal of semiconductor material in the nominal c-axis growth direction using a physical vapor transport (PVT) process in a sublimation system, wherein the crystal is completely free of micropipe defects is disclosed.
The method comprises:
attaching a seed material to a seed holder and forming a uniform thermal contact between the seed material and seed holder;
placing a source material and the seed material attached to the seed holder in a reaction crucible, wherein constituent components of the sublimation system including at least the source material, the seed holder, and the reaction crucible are substantially free from unintentional impurities; and
controlling growth temperature, growth pressure, sublimation flux and composition of the semiconductor material, and a temperature gradient between the source material and the seed material or the crystal growing on the seed material during the PVT process to eliminate micropipe-inducing process instabilities and grow the micropipe-free crystal on the seed material.

9. 发明公开

EP2059946A4 MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE 有权
标题翻译：用于生产微型管，无硅和过程
公开(公告)号：EP2059946A4
公开(公告)日：2011-10-26
申请号：EP07842416
申请日：2007-09-13
申请人： CREE INC
发明人： BASCERI CEM , KHLEBNIKOV YURI , KHLEBNIKOV IGOR , BALKAS CENGIZ , SILAN MURAT N , HOBGOOD HUDSON MCD , CARTER CALVIN H JR , BALAKRISHNA VIJAY , LEONARD ROBERT T , POWELL ADRIAN R , TSVETKOV VALERI , JENNY JASON R
IPC分类号： C30B23/00 , C30B29/36 , H01L21/02 , H01L21/20
CPC分类号： H01L29/1608 , C30B23/002 , C30B23/005 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/0254 , H01L21/02631 , H01L21/02634 , Y10T428/21
摘要： A method of growing a single-crystal of semiconductor material in the nominal c-axis growth direction using a physical vapor transport (PVT) process in a sublimation system, wherein the crystal is completely free of micropipe defects is disclosed. The method comprises: attaching a seed material to a seed holder and forming a uniform thermal contact between the seed material and seed holder; placing a source material and the seed material attached to the seed holder in a reaction crucible, wherein constituent components of the sublimation system including at least the source material, the seed holder, and the reaction crucible are substantially free from unintentional impurities; and controlling growth temperature, growth pressure, sublimation flux and composition of the semiconductor material, and a temperature gradient between the source material and the seed material or the crystal growing on the seed material during the PVT process to eliminate micropipe-inducing process instabilities and grow the micropipe-free crystal on the seed material.

10. 发明授权

EP1346085B1 METHOD FOR PRODUCING GROUP III METAL NITRIDE BASED MATERIALS 有权
标题翻译：用于生产III族金属氮化物材料
公开(公告)号：EP1346085B1
公开(公告)日：2011-10-12
申请号：EP01998673.6
申请日：2001-11-30
申请人： NORTH CAROLINA STATE UNIVERSITY
发明人： CUOMO, Jerome, J. , WILLIAMS, N., Mark , CARLSON, Eric, P. , HANSER, Andrew, D. , THOMAS, Darin, T.
IPC分类号： C30B23/08 , C30B23/02 , C30B25/06 , C30B29/38
CPC分类号： C30B29/403 , C23C14/0063 , C23C14/355 , C30B23/00 , C30B23/002 , C30B23/005 , C30B25/18 , C30B29/406 , C30B29/605 , H01J37/3408 , H01L21/0237 , H01L21/0242 , H01L21/02439 , H01L21/02458 , H01L21/0254 , H01L21/0259 , H01L21/02631
摘要： A method utilizes sputter transport techniques to produce arrays or layers of self-forming, self-oriented columnar structures characterized as discrete, single-crystal Group III nitride posts or columns on various substrates. The columnar structure is formed in a single growth step, and therefore does not require processing steps for depositing, patterning, and etching growth masks. A Group III metal source vapor is produced by sputtering a target, for combination with nitrogen supplied from a nitrogen-containing source gas. The III/V ratio is adjusted or controlled to create a Group III metal-rich environment within the reaction chamber conducive to preferential column growth. The reactant vapor species are deposited on the growth surface to produce single-crystal M N columns thereon. The columns can be employed as a strain-relieving platform for the growth of continuous, low defect-density, bulk materials. Additionally, the growth conditions can be readjusted to effect columnar epitaxial overgrowth, wherein coalescence of the Group III nitride material occurs at the tops of the columns, thereby forming a substantially continuous layer upon which additional layers can be deposited. The intervening presence of the column structure mitigates thermal mismatch stress between substrates, films, or other layers above and below the columns. A high deposition rate sputter method utilizing a non-thermionic electron/plasma injector assembly is provided to carrying out one or more of the growth steps.

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