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1. 发明授权

EP2670882B1 APPARATUS AND METHOD FOR ATOMIC LAYER DEPOSITION 有权
标题翻译：用于原子层沉积的装置和方法
公开(公告)号：EP2670882B1
公开(公告)日：2016-05-18
申请号：EP12704560.7
申请日：2012-01-30
申请人： Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO
发明人： VERMEER, Adrianus Johannes Petrus Maria , DE SWART, Jozef Johannes , WIT, Robert Coenraad
IPC分类号： C23C16/458 , C23C16/54 , C23C16/455 , F16C32/06 , B65G51/03
CPC分类号： C23C16/44 , C23C16/45551 , C23C16/458 , C23C16/4582 , C23C16/4583 , C23C16/54 , F16C32/0603 , F16C32/0685

2. 发明公开

EP2441086A2 CONTINUOUS FEED CHEMICAL VAPOR DEPOSITION SYSTEM 审中-公开
标题翻译： WITH连续供应化学气相沉积系统
公开(公告)号：EP2441086A2
公开(公告)日：2012-04-18
申请号：EP10786595.8
申请日：2010-06-03
申请人： Veeco Instruments Inc.
发明人： ARMOUR, Eric A. , QUINN, William E. , SFERLAZZO, Piero
IPC分类号： H01L21/205
CPC分类号： C23C16/54 , C23C16/4582 , C30B25/025 , C30B35/00
摘要： A continuous feed CVD system includes a wafer transport mechanism that transport a wafer through a deposition chamber during CVD processing. The deposition chamber defines a passage for the wafer to pass through while being transported by the wafer transport mechanism. The deposition chamber includes a plurality of process chambers that are isolated by barriers which maintain separate process chemistry in each of the plurality of process chambers. Each of the plurality of process chambers includes a gas input port and a gas exhaust port, and a plurality of CVD gas sources. At least two of the plurality of CVD gas sources are coupled to the gas input port of each of the plurality of process chambers.

3. 发明公开

EP1866465A2 REACTION SYSTEM FOR GROWING A THIN FILM 审中-公开
标题翻译：反应体系用于生产薄膜
公开(公告)号：EP1866465A2
公开(公告)日：2007-12-19
申请号：EP06718678.3
申请日：2006-01-17
申请人： ASM America, Inc.
发明人： VERGHESE, Mohith , SHERO, Eric , BABIC, Darko , TERHORST, Herbert , PEUSSA, Marko , YAN, Min
IPC分类号： C30B25/14 , C23C16/455
CPC分类号： H01L21/68785 , C23C16/4408 , C23C16/455 , C23C16/45517 , C23C16/45525 , C23C16/45544 , C23C16/45561 , C23C16/45563 , C23C16/45582 , C23C16/45587 , C23C16/45591 , C23C16/458 , C23C16/4582 , C23C16/4583 , C23C16/4586 , C30B35/00 , H01L21/67236 , H01L21/68714 , H01L21/68742
摘要： An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.

4. 发明授权

EP0964083B1 Apparatus for growing a compound semiconductor layer 失效
标题翻译：装置用于生长的化合物半导体层
公开(公告)号：EP0964083B1
公开(公告)日：2004-07-14
申请号：EP99202642.7
申请日：1995-05-18
申请人： SHARP KABUSHIKI KAISHA
发明人： Ishizumi, Takashi , Kaneiwa, Shinji
IPC分类号： C30B25/02 , C30B25/14 , C30B25/12
CPC分类号： C23C16/45591 , C23C16/303 , C23C16/455 , C23C16/45551 , C23C16/4582 , C30B25/02 , C30B25/14 , C30B29/40 , C30B29/406

5. 发明授权

EP0448346B1 Vapor-phase deposition apparatus 失效
标题翻译：用于气相沉积的装置
公开(公告)号：EP0448346B1
公开(公告)日：1997-07-09
申请号：EP91302357.8
申请日：1991-03-19
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Sato, Yuusuke, c/o Intellectual Property Division , Ohmine, Toshimitsu, c/o Intellectual Property Div.
IPC分类号： C23C16/44 , C23C16/46
CPC分类号： C23C16/45521 , C23C16/4582 , C23C16/481 , H01L21/68735 , H01L21/6875 , H01L21/68785

6. 发明授权

EP0476480B1 Vacuum film forming apparatus 失效
标题翻译：一种用于在产生真空的层。
公开(公告)号：EP0476480B1
公开(公告)日：1995-07-26
申请号：EP91115234.6
申请日：1991-09-10
申请人： ANELVA CORPORATION , NEC CORPORATION
发明人： AKETAGAWA, Ken-ichi c/o ANELVA CORPORATION , SAKAI, Junro c/o ANELVA CORPORATION , MURAKAMI, Shun-ichi c/o ANELVA CORPORATION , MUROTA, Hiroyoshi c/o ANELVA CORPORATION , Tatsumi, Toru
IPC分类号： C23C16/44 , C23C14/56 , C23C16/54
CPC分类号： C23C14/564 , C23C16/4582 , C23C16/54

7. 发明授权

EP3733927B1 FILM FORMING DEVICE 有权转让
公开(公告)号：EP3733927B1
公开(公告)日：2024-06-19
申请号：EP19832537.5
申请日：2019-02-28
IPC分类号： C23C16/455 , B05D3/02 , H01L31/18 , C23C14/56
CPC分类号： H01L31/18 , C23C16/45574 , C23C16/0209 , C23C16/4486 , C23C16/54 , C23C16/56 , C23C16/46 , C23C16/4582 , C23C16/45595 , B05D1/02 , B05D1/30 , B05D3/0263 , B05D2252/0420130101 , B05D2252/1020130101

8. 发明公开

EP2922980A4 SUBSTRATE LOADING IN AN ALD REACTOR 有权
标题翻译： EINEM ATOMLAGENABSCHEIDUNGSREAKTOR中的SUBSTREBELADUNG
公开(公告)号：EP2922980A4
公开(公告)日：2016-07-06
申请号：EP12888893
申请日：2012-11-23
申请人： PICOSUN OY
发明人： KILPI VÄINÖ , KOSTAMO JUHANA , LI WEI-MIN
IPC分类号： C23C16/455 , C23C16/458 , H01L21/677 , H01L21/687
CPC分类号： C23C16/45546 , C23C16/4582 , C23C16/4584 , H01L21/67742 , H01L21/67757 , H01L21/67781 , H01L21/68707
摘要： An apparatus and method for loading a plurality of substrates into a substrate holder in a loading chamber of a deposition reactor to form a vertical stack of horizontally oriented substrates within said substrate holder, for turning the substrate holder to form a horizontal stack of vertically oriented substrates, and for lowering the substrate holder into a reaction chamber of the deposition reactor for deposition. The technical effects achieved are: a top loading system for a vertical flow deposition reactor in which the substrates can be loaded with horizontal orientation, eliminating the need for flipping each substrate separately by flipping the whole substrate holder and minimizing a loading distance in a reactor cluster.
摘要翻译：一种用于将多个基板装载到沉积反应器的装载室中的基板保持器中以在所述基板保持器内形成水平取向基板的垂直堆叠的装置和方法，用于转动基板保持器以形成垂直取向基板的水平堆叠并且用于将衬底保持器降低到用于沉积的沉积反应器的反应室中。实现的技术效果是：用于垂直流沉积反应器的顶部装载系统，其中基板可以以水平取向装载，消除了通过翻转整个基板保持器并最小化反应堆组中的负载距离而分开翻转每个基板的需要。

9. 发明公开

EP2877610A1 GASSEPARATION 有权转让
标题翻译：气体分离
公开(公告)号：EP2877610A1
公开(公告)日：2015-06-03
申请号：EP13739717.0
申请日：2013-07-23
申请人： Roth & Rau AG
发明人： MAI, Joachim , DECKER, Daniel , HELBIG, Stefan , LOEWEL, Oliver
IPC分类号： C23C14/56 , C23C16/44 , C23C16/455 , C23C16/54
CPC分类号： C23C16/4412 , C23C14/564 , C23C16/4401 , C23C16/455 , C23C16/45502 , C23C16/458 , C23C16/4582 , C23C16/4583 , C23C16/54
摘要： A device (1) for moving gas in vacuum coating systems is disclosed, which suctions out gaseous coating material in the coating chamber that has not precipitated onto the substrates (3) to be coated. At least one pump for suctioning out the coating material is connected in an axial extension (112) of the suction device to the same, wherein the suction device has one or more suction openings (121) and is subdivided into at least two axial areas, the suction characteristics of which can be adjusted largely separately from one another.

10. 发明公开

EP2481832A1 Apparatus for atomic layer deposition 审中-公开
标题翻译： Vorrichtung zur Atomschichtablagerung
公开(公告)号：EP2481832A1
公开(公告)日：2012-08-01
申请号：EP11152792.5
申请日：2011-01-31
申请人： Nederlandse Organisatie voor Toegepast -Natuurwetenschappelijk Onderzoek TNO
发明人： Vermeer, Adrianus Johannes Petrus Maria , de Swart, Jozef Johannes , Wit, Coen
IPC分类号： C23C16/458 , C23C16/54 , C23C16/455 , F16C32/06 , B65G51/03
CPC分类号： C23C16/44 , C23C16/45551 , C23C16/458 , C23C16/4582 , C23C16/4583 , C23C16/54 , F16C32/0603 , F16C32/0685
摘要： Apparatus for atomic layer deposition on a surface of a sheeted substrate, comprising: an injector head comprising a deposition space provided with a precursor supply and a precursor drain; said supply and drain arranged for providing a precursor gas flow from the precursor supply via the deposition space to the precursor drain; the deposition space in use being bounded by the injector head and the substrate surface; a gas bearing comprising a bearing gas injector, arranged for injecting a bearing gas between the injector head and the substrate surface, the bearing gas thus forming a gas-bearing; a conveying system providing relative movement of the substrate and the injector head along a plane of the substrate to form a conveying plane along which the substrate is conveyed. A support part arranged opposite the injector head, the support part constructed to provide a gas bearing pressure arrangement that balances the injector head gas-bearing in the conveying plane, so that the substrate is held supportless by said gas bearing pressure arrangement in between the injector head and the support part.
摘要翻译：用于原子层沉积在片状基底的表面上的装置，包括：注射器头，其包括设置有前体供应源和前体排出物的沉积空间; 所述供应和排放设置成用于从所述前体供应源经由所述沉积空间向所述前体排放提供前体气体流; 使用中的沉积空间由注射器头和衬底表面限定; 包括轴承气体注入器的气体轴承，其布置成在所述喷射头和所述基板表面之间注入轴承气体，所述轴承气体因此形成气体轴承; 输送系统，其提供所述基底和所述注射器头部沿着所述基底的平面的相对运动，以形成所述基底沿着所述输送平面传送的输送平面。支撑部分，其布置成与喷射器头相对，所述支撑部分被构造成提供气体支承压力装置，其平衡所述输送平面中的喷射器头部气体轴承，使得所述基板由所述气体承载压力装置保持在所述喷射器之间头部和支撑部分。

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