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    • 2. 发明公开
    • Method and system for thin film deposition
    • 方法和系统,用于薄膜沉积
    • EP2465972A3
    • 2012-09-05
    • EP11193595.3
    • 2011-12-14
    • NCD Co., Ltd.
    • Shin, Woong ChulBaek, MinChoi, Kyu-Jeong
    • C23C16/54C23C16/455
    • C23C16/54C23C16/45504C23C16/45546
    • Disclosed herein is a thin film deposition system, which includes a process chamber configured to provide a laminar gas flow and virtually divided into several spaces when a reaction gas and a purge gas are consecutively supplied into the process chamber, so that atomic layer deposition can be performed with respect to a plurality of substrates while the virtually divided spaces are moved within the process chamber, thereby reducing a process tack time. The thin film deposition system includes cassettes in which a plurality of substrates is loaded such that the substrates are separated constant distances from each other and the distance between the respective substrates becomes a distance between laminar flows; a process chamber which receives the cassettes such that a distance between a cassette and an inner wall of the process chamber becomes the distance between laminar flows, and in which the substrates are subjected to atomic layer deposition; a gas supply unit disposed at one sidewall of the process chamber and supplying gas to all of the substrates placed in the cassettes in a direction horizontal to arrangement of the substrates such that a laminar flow of the gas is provided to leading ends of the substrates, to a space between substrates, and to a space between the substrate and the wall of the process chamber; and a gas exhaust unit disposed at an opposite side with respect to the gas supply unit within the process chamber and discharging the gas from the process chamber by suctioning the gas at rear sides of the substrates.
    • 3. 发明公开
    • Method and system for thin film deposition
    • Verfahren und System zurDünnfilmablagerung
    • EP2465972A2
    • 2012-06-20
    • EP11193595.3
    • 2011-12-14
    • NCD Co., Ltd.
    • Shin, Woong ChulBaek, MinChoi, Kyu-Jeong
    • C23C16/54C23C16/455
    • C23C16/54C23C16/45504C23C16/45546
    • Disclosed herein is a thin film deposition system, which includes a process chamber configured to provide a laminar gas flow and virtually divided into several spaces when a reaction gas and a purge gas are consecutively supplied into the process chamber, so that atomic layer deposition can be performed with respect to a plurality of substrates while the virtually divided spaces are moved within the process chamber, thereby reducing a process tack time. The thin film deposition system includes cassettes in which a plurality of substrates is loaded such that the substrates are separated constant distances from each other and the distance between the respective substrates becomes a distance between laminar flows; a process chamber which receives the cassettes such that a distance between a cassette and an inner wall of the process chamber becomes the distance between laminar flows, and in which the substrates are subjected to atomic layer deposition; a gas supply unit disposed at one sidewall of the process chamber and supplying gas to all of the substrates placed in the cassettes in a direction horizontal to arrangement of the substrates such that a laminar flow of the gas is provided to leading ends of the substrates, to a space between substrates, and to a space between the substrate and the wall of the process chamber; and a gas exhaust unit disposed at an opposite side with respect to the gas supply unit within the process chamber and discharging the gas from the process chamber by suctioning the gas at rear sides of the substrates.
    • 本文公开了一种薄膜沉积系统,其包括处理室,其被配置为当将反应气体和吹扫气体连续地供应到处理室中时提供层流气流并且实际上分成几个空间,使得原子层沉积可以 相对于多个基板执行,同时虚拟分割的空间在处理室内移动,从而减少处理粘合时间。 薄膜沉积系统包括其中装载多个基板的盒,使得基板彼此间隔开恒定距离,并且各个基板之间的距离变成层流之间的距离; 处理室,其容纳盒,使得盒和处理室的内壁之间的距离成为层流之间的距离,并且其中基板经受原子层沉积; 气体供给单元,其设置在处理室的一个侧壁处,并且沿垂直于基板布置的方向向放置在盒中的所有基板供应气体,使得气体的层流被提供给基板的前端, 到基板之间的空间,以及基板和处理室的壁之间的空间; 以及排气单元,其相对于处理室内的气体供给单元设置在相对侧,并且通过在基板的后侧抽吸气体而从处理室排出气体。