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61. 发明授权

EP3084833B1 EDGE TERMINATION FOR SEMICONDUCTOR DEVICES AND CORRESPONDING FABRICATION METHOD 有权转让
标题翻译：半导体器件的边缘终止和相应的制造方法
公开(公告)号：EP3084833B1
公开(公告)日：2017-09-13
申请号：EP14808949.3
申请日：2014-12-03
申请人： ABB Schweiz AG
发明人： ANTONIOU, Marina , UDREA, Florin , NISTOR, Iulian , RAHIMO, Munaf , CORVASCE, Chiara
IPC分类号： H01L29/06 , H01L29/78 , H01L29/739 , H01L21/336 , H01L21/331 , H01L29/40
CPC分类号： H01L29/0619 , H01L29/0623 , H01L29/0661 , H01L29/0696 , H01L29/404 , H01L29/66333 , H01L29/66348 , H01L29/66712 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7811 , H01L29/7813
摘要： A termination region of an IGBT is described, in which surface p-rings are combined with oxide/polysilicon-filled trenches, buried p-rings and surface field plates, so as to obtain an improved distribution of potential field lines in the termination region. The combination of surface ring termination and deep ring termination offers a significant reduction in the amount silicon area which is required for the termination region.
摘要翻译：描述了IGBT的终端区域，其中表面p环与氧化物/多晶硅填充的沟槽，埋入的p环和表面场板结合，以便在终止区域中获得改善的势场线分布。表面环终端和深环终端的结合大大减少了终端区所需的硅面积。

62. 发明公开

EP2966671A4 LASER ANNEALING DEVICE, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE 有权
标题翻译：用于制造半导体分量激光退火和方法
公开(公告)号：EP2966671A4
公开(公告)日：2017-01-25
申请号：EP13876834
申请日：2013-03-07
申请人： MITSUBISHI ELECTRIC CORP
发明人： KANADA KAZUNORI , MINATO TADAHARU , KAWASE YUSUKE
IPC分类号： H01L21/268 , B23K26/0622 , B23K26/073 , B23K26/082 , H01L21/20
CPC分类号： H01L21/268 , B23K26/0604 , B23K26/0622 , B23K26/0732 , B23K26/082 , B23K26/0853 , H01L21/324 , H01L29/66333
摘要： A laser annealing device of the present invention includes a stage on which a heating object is placed, a first laser element which emits first continuous laser light, a first optical system which leads the first continuous laser light to the heating object to form a first application region on the heating object, a second laser element which emits second continuous laser light having a wavelength shorter than that of the first continuous laser light, a second optical system which leads the second continuous laser light to the heating object to form a second application region on the heating object, and a system controller which executes scanning with the first application region and the second application region so that each portion of the heating object is scanned with at least part of the first application region before being scanned with the second application region.

63. 发明公开

EP3082167A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译： HALBLEITERBAUELEMENTHERSTELLUNGSVERFAHREN
公开(公告)号：EP3082167A1
公开(公告)日：2016-10-19
申请号：EP13898991.8
申请日：2013-12-13
申请人： Mitsubishi Electric Corporation
发明人： KAWASE, Yusuke , KANADA, Kazunori , MINATO, Tadaharu
IPC分类号： H01L29/739 , H01L21/336 , H01L29/78
CPC分类号： H01L29/7395 , H01L21/0415 , H01L21/26513 , H01L21/324 , H01L29/0821 , H01L29/0847 , H01L29/167 , H01L29/66333
摘要： A first step in which, on a first main surface and a second main surface opposite to the first main surface of a semiconductor substrate, a first conductivity-type impurity is implanted in the second main surface by using multiple ion implantations of different acceleration energies so as to form a first impurity region on the semiconductor substrate, a second step in which a second conductivity-type impurity is implanted in the second main surface using the acceleration energy lower than the multiple ion implantations, and a second impurity region is formed so that a non-implantation region in which the impurity is not implanted is left between that and the first impurity region in the semiconductor substrate, a heat treatment step in which heat treatment is applied to the semiconductor substrate so that a buffer layer is formed by the first conductivity-type impurity, a collector layer is formed by the second conductivity-type impurity, and a non-diffusion region in which the first conductivity-type impurity and the second conductivity-type impurity do not diffuse are left between the buffer layer and the collector layer, and a step in which a collector electrode in contact with the collector layer is formed are provided,
摘要翻译：第一步骤是通过使用不同加速能量的多次离子注入，在第一主表面和与半导体衬底的第一主表面相对的第二主表面上将第一导电类型杂质注入第二主表面，因此为了在半导体衬底上形成第一杂质区域，第二步骤是使用低于多个离子注入的加速能量将第二导电类型杂质注入第二主表面，形成第二杂质区，使得在半导体衬底中留下不注入杂质的非注入区域和第一杂质区域之间的热处理步骤，其中对半导体衬底施加热处理使得缓冲层由第一导电型杂质，通过第二导电型杂质形成集电极层，以及非扩散区域，其中第一c 在缓冲层和集电体层之间留有感生性杂质和第二导电型杂质不扩散，并且设置形成与集电体层接触的集电极的工序，

64. 发明公开

EP3046140A3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：EP3046140A3
公开(公告)日：2016-08-10
申请号：EP16150741.3
申请日：2016-01-11
申请人： Renesas Electronics Corporation
发明人： KAWAI, Tohru , NAKASHIBA, Yasutaka , AKIYAMA, Yutaka
IPC分类号： H01L21/336 , H01L29/78 , H01L29/739 , H01L27/07
CPC分类号： H01L29/7813 , H01L23/4952 , H01L23/49562 , H01L23/5223 , H01L24/05 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L27/0629 , H01L27/0733 , H01L29/0696 , H01L29/1095 , H01L29/4236 , H01L29/66333 , H01L29/66348 , H01L29/66712 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7803 , H01L2224/05624 , H01L2224/0603 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48464 , H01L2224/49111 , H01L2224/73265 , H01L2924/00014 , H01L2224/45015 , H01L2924/207 , H01L2924/00012
摘要： Performance of a semiconductor device is improved without increasing an area size of a semiconductor chip. For example, a source electrode of a power transistor and an upper electrode of a capacitor element have an overlapping portion. In other word, the upper electrode of the capacitor element is formed over the source electrode of the power transistor through a capacitor insulating film. That is, the power transistor and the capacitor element are arranged in a laminated manner in a thickness direction of the semiconductor chip. As a result, it becomes possible to add a capacitor element to be electrically coupled to the power transistor while suppressing an increase in planar size of the semiconductor chip.
摘要翻译：在不增加半导体芯片面积的情况下提高了半导体器件的性能。例如，功率晶体管的源电极和电容器元件的上电极具有重叠部分。换句话说，电容器元件的上电极通过电容器绝缘膜形成在功率晶体管的源电极上。即，功率晶体管和电容器元件在半导体芯片的厚度方向上层叠配置。其结果是，能够抑制半导体芯片的平面尺寸的增加，并且追加与功率晶体管电连接的电容元件。

65. 发明公开

EP3046140A2 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译： HERBLEITERBAUEMENT UND VERFAHREN ZUR HERSTELLUNG DAVON
公开(公告)号：EP3046140A2
公开(公告)日：2016-07-20
申请号：EP16150741.3
申请日：2016-01-11
申请人： Renesas Electronics Corporation
发明人： KAWAI, Tohru , NAKASHIBA, Yasutaka , AKIYAMA, Yutaka
IPC分类号： H01L21/336 , H01L29/78 , H01L29/739
CPC分类号： H01L29/7813 , H01L23/4952 , H01L23/49562 , H01L23/5223 , H01L24/05 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L27/0629 , H01L27/0733 , H01L29/0696 , H01L29/1095 , H01L29/4236 , H01L29/66333 , H01L29/66348 , H01L29/66712 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7803 , H01L2224/05624 , H01L2224/0603 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48464 , H01L2224/49111 , H01L2224/73265 , H01L2924/00014 , H01L2224/45015 , H01L2924/207 , H01L2924/00012
摘要： Performance of a semiconductor device is improved without increasing an area size of a semiconductor chip. For example, a source electrode of a power transistor and an upper electrode of a capacitor element have an overlapping portion. In other word, the upper electrode of the capacitor element is formed over the source electrode of the power transistor through a capacitor insulating film. That is, the power transistor and the capacitor element are arranged in a laminated manner in a thickness direction of the semiconductor chip. As a result, it becomes possible to add a capacitor element to be electrically coupled to the power transistor while suppressing an increase in planar size of the semiconductor chip.
摘要翻译：在不增加半导体芯片的面积尺寸的情况下，半导体器件的性能得到改善。例如，功率晶体管的源电极和电容器元件的上电极具有重叠部分。换句话说，电容器元件的上电极通过电容器绝缘膜形成在功率晶体管的源极上。也就是说，功率晶体管和电容器元件在半导体芯片的厚度方向上层叠。结果，可以在抑制半导体芯片的平面尺寸的增加的同时添加电耦合到功率晶体管的电容器元件。

66. 发明公开

EP2626906A3 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：EP2626906A3
公开(公告)日：2016-06-15
申请号：EP13153523.9
申请日：2013-01-31
申请人： Renesas Electronics Corporation
发明人： Arai, Daisuke , Kubo, Sakae , Ikegami, Yuta
IPC分类号： H01L29/739 , H01L21/331 , H01L29/06 , H01L21/20 , H01L29/66 , H01L29/04 , H01L29/08
CPC分类号： H01L29/7393 , H01L29/045 , H01L29/0619 , H01L29/0623 , H01L29/0696 , H01L29/0847 , H01L29/66333 , H01L29/7395
摘要： To improve a manufacture yield of semiconductor devices each including an 1GBT, an active region is defined by an insulating film and where an element of an 1GBT is formed has a first long side and a second long side spaced at a predetermined distance apart from each other and extended in a first direction in a planar view. One end of the first long side has a first short side forming a first angle with the first long side, and one end of the second long side has a second short side forming a second angle with the second long side. The other end of the first long side has a third short side forming a third angle with the first long side, and the other end of the second long side has a fourth short side forming a fourth angle with the second long side. The first angle, the second angle, the third angle, and the fourth angle are in a range larger than 90 degrees and smaller than 180 degrees.
摘要翻译：为了提高各自包括1GBT的半导体器件的制造成品率，有源区域由绝缘膜限定，并且其中形成1GBT的元件具有彼此隔开预定距离隔开的第一长边和第二长边并且在平面图中沿第一方向延伸。第一长边的一端具有与第一长边形成第一角度的第一短边，第二长边的一端具有与第二长边形成第二角度的第二短边。第一长边的另一端具有与第一长边形成第三角度的第三短边，第二长边的另一端具有与第二长边形成第四角度的第四短边。第一角度，第二角度，第三角度和第四角度在大于90度且小于180度的范围内。

67. 发明公开

EP2953166A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：EP2953166A1
公开(公告)日：2015-12-09
申请号：EP15167948.7
申请日：2015-05-18
申请人： Renesas Electronics Corporation
发明人： Matsuura, Hitoshi
IPC分类号： H01L29/66 , H01L29/739 , H01L29/06 , H01L29/423 , H01L29/40
CPC分类号： H01L29/7397 , H01L29/0619 , H01L29/0638 , H01L29/0696 , H01L29/0804 , H01L29/0821 , H01L29/1095 , H01L29/36 , H01L29/404 , H01L29/407 , H01L29/41708 , H01L29/4236 , H01L29/42364 , H01L29/42368 , H01L29/66333 , H01L29/66348 , H01L29/7393 , H01L29/7395 , H01L29/7813
摘要： A switching loss is prevented from being deteriorated by suppressing increase in a gate capacitance due to a cell shrink of an IE type trench gate IGBT. A cell formation region (CR) is configured of a linear active cell region (LCa), a linear hole collector cell region (LCc), and a linear inactive cell region (LCi) between them. Then, upper surfaces of the third and fourth linear trench gate electrodes (TG3, TG4) which are formed so as to sandwich both sides of the linear hole collector cell region and electrically connected to an emitter electrode (EE) are positioned to be lower than upper surfaces of the first and second linear trench gate electrodes (TG1,TG2) which are formed so as to sandwich both sides of the linear active cell region and electrically connected to a gate electrode (GE).
摘要翻译：通过抑制由于IE型沟槽栅极IGBT的单元收缩导致的栅极电容的增加而防止开关损耗恶化。单元形成区（CR）由它们之间的线性有源单元区（LCa），线性空穴集电极单元区（LCc）和线性无源单元区（LCi）构成。然后，形成为夹着线状空穴集电极单元区域的两侧且与发射极电极（EE）电连接的第三及第四线状沟槽栅电极（TG3，TG4）的上表面位于比第一和第二线状沟槽栅电极（TG1，TG2）的上表面形成为夹在线状有源单元区域的两侧并电连接到栅电极（GE）。

68. 发明授权

EP2455972B1 IGBT device with buried emitter regions 有权
标题翻译：与凹发射区的IGBT器件
公开(公告)号：EP2455972B1
公开(公告)日：2015-03-25
申请号：EP11189781.5
申请日：2011-11-18
申请人： STMicroelectronics Srl
发明人： Patti, Davide Giuseppe
IPC分类号： H01L29/08 , H01L29/739
CPC分类号： H01L29/7395 , H01L29/0804 , H01L29/0834 , H01L29/1095 , H01L29/66333

69. 发明授权

EP1408554B1 Durch Feldeffekt steuerbares Halbleiterbauelement 失效
标题翻译：场效应可控半导体元件
公开(公告)号：EP1408554B1
公开(公告)日：2015-03-25
申请号：EP03026265.3
申请日：1997-01-30
申请人： Infineon Technologies AG
发明人： Tihanyi, Jenö , Strack, Helmut , Geiger, Heinrich
IPC分类号： H01L29/78 , H01L29/739 , H01L29/06
CPC分类号： H01L29/7811 , H01L21/2257 , H01L29/0623 , H01L29/0634 , H01L29/0653 , H01L29/0878 , H01L29/1095 , H01L29/402 , H01L29/66333 , H01L29/66712 , H01L29/7395 , H01L29/7396 , H01L29/7802 , H01L29/7835

70. 发明公开

EP2551891A4 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：EP2551891A4
公开(公告)日：2014-07-02
申请号：EP10848496
申请日：2010-12-20
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： HARADA SHIN , SASAKI MAKOTO , NISHIGUCHI TARO , OKITA KYOKO , WADA KEIJI , MIYAZAKI TOMIHITO
IPC分类号： H01L21/02 , H01L21/336 , H01L29/12 , H01L29/739 , H01L29/78
CPC分类号： H01L29/7802 , H01L21/02002 , H01L21/02008 , H01L21/2007 , H01L29/045 , H01L29/1608 , H01L29/66068 , H01L29/66333 , H01L29/7395

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