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1. 发明授权

US06465051B1 Method of operating high density plasma CVD reactor with combined inductive and capacitive coupling 失效
标题翻译：操作具有组合电感和电容耦合的高密度等离子体CVD反应堆的方法
公开(公告)号：US06465051B1
公开(公告)日：2002-10-15
申请号：US08751899
申请日：1996-11-18
申请人： Turgut Sahin , Fred C. Redeker , Romuald Nowak , Shijian Li , Timothy Dyer , Derek R. Witty
发明人： Turgut Sahin , Fred C. Redeker , Romuald Nowak , Shijian Li , Timothy Dyer , Derek R. Witty
IPC分类号： H05H146
CPC分类号： H01J37/32862 , C23C16/4405 , H01J37/32082
摘要： The invention is embodied in a method of cleaning a plasma reactor by creating a vacuum in the chamber while introducing an etchant gas into the chamber through the gas injection ports, and applying RF energy to a ceiling electrode in the chamber while not necessarily applying RF energy to the coil antenna, so as to strike a predominantly capacitively coupled plasma in the vacuum chamber. In another embodiment the method includes, whenever the reactor is to be operated in an inductive coupling mode, applying RF power to the reactors coil antenna while grounding the ceiling electrode, and whenever the reactor is to be operated in a capacitive coupling mode, applying RF power to the ceiling electrode, and whenever the reactor is to be cleaned, cleaning the reactor by applying RF power to the ceiling electrode and to the coil antenna while introducing an etchant gas into the vacuum chamber. In yet another embodiment the method includes performing chemical vapor deposition on a wafer by introducing a deposition precursor gas into the chamber while maintaining an inductively coupled plasma therein by applying RF power to the coil antenna while grounding the ceiling electrode, and cleaning the reactor by introducing a precursor cleaning gas into the chamber while maintaining a capacitively coupled plasma in the chamber by applying RF power to the ceiling electrode.
摘要翻译：本发明体现在一种通过在室中产生真空来清洁等离子体反应器的方法，同时通过气体注入口将蚀刻剂气体引入室中，并且将RF能量施加到室中的顶板电极，而不一定施加RF能量到线圈天线，以便在真空室中击穿主要电容耦合的等离子体。在另一个实施例中，该方法包括：每当反应器以电感耦合模式工作时，在将天线电极接地的同时向反应器线圈天线施加RF功率，并且每当反应器以电容耦合模式工作时，施加RF 电源到天花板电极，并且每当要清洁反应堆时，通过向天花板电极和线圈天线施加RF功率来清洁反应器，同时将蚀刻剂气体引入真空室。在另一个实施方案中，该方法包括通过将沉积前体气体引入室中，同时通过在将天线电极接地的同时向线圈天线施加RF功率来维持其中的电感耦合等离子体来执行化学气相沉积，并通过引入来清洁反应器前体清洗气体进入室，同时通过向天花板电极施加RF功率来在室内维持电容耦合的等离子体。

2. 发明授权

US07497767B2 Vibration damping during chemical mechanical polishing 有权
标题翻译：化学机械抛光时的振动阻尼
公开(公告)号：US07497767B2
公开(公告)日：2009-03-03
申请号：US11046189
申请日：2005-01-28
申请人： Hung Chih Chen , Shijian Li , John M. White , Ramin Emami , Fred C. Redeker , Steven M. Zuniga , Ramakrishna Cheboli
发明人： Hung Chih Chen , Shijian Li , John M. White , Ramin Emami , Fred C. Redeker , Steven M. Zuniga , Ramakrishna Cheboli
IPC分类号： B24B5/35
CPC分类号： B24B37/30
摘要： A carrier head for chemical mechanical polishing is described. The carrier head includes a backing assembly, a housing and a damping material. The backing assembly includes a substrate support surface. The housing is connectable to a drive shaft to rotate with the drive shaft about a rotation axis. In one implementation, the damping material is in a load path between the backing assembly and the housing to reduce transmission of vibrations from the backing assembly to the housing.
摘要翻译：描述了用于化学机械抛光的载体头。载体头包括背衬组件，壳体和阻尼材料。背衬组件包括基板支撑表面。壳体可连接到驱动轴，以驱动轴绕旋转轴线旋转。在一个实施方案中，阻尼材料位于背衬组件和壳体之间的负载路径中，以减少振动从背衬组件传递到壳体。

3. 发明授权

US07413627B2 Deposition chamber and method for depositing low dielectric constant films 有权
标题翻译：沉积室和沉积低介电常数膜的方法
公开(公告)号：US07413627B2
公开(公告)日：2008-08-19
申请号：US10997311
申请日：2004-11-23
申请人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
发明人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
IPC分类号： H01L21/3065 , C23C16/455 , C23C16/505
CPC分类号： C23C16/45574 , C23C16/401 , C23C16/45512 , C23C16/45514 , C23C16/45576 , H01J37/3244
摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.
摘要翻译：改进的沉积室（2）包括限定容纳衬底支撑件（14）的腔室（18）的壳体（4）。氧和SiF 4的混合物通过一组第一喷嘴（34）输送，并且硅烷通过一组第二喷嘴（34a）被输送到周围（40）的腔室内底物支撑。将硅烷（或硅烷和SiF 4 Si的混合物）和氧分别从孔口（64,76）中心地注入到基底上方的腔室中。气体的均匀分散与每种气体的最佳流速相结合，导致薄膜均匀低（低于3.4）的介电常数。

4. 发明授权

US07104267B2 Planarized copper cleaning for reduced defects 失效
标题翻译：平面化铜清洁减少缺陷
公开(公告)号：US07104267B2
公开(公告)日：2006-09-12
申请号：US09727133
申请日：2000-11-29
申请人： Ramin Emami , Shijian Li , Sen-Hou Ko , Fred C. Redeker , Madhavi Chandrachood
发明人： Ramin Emami , Shijian Li , Sen-Hou Ko , Fred C. Redeker , Madhavi Chandrachood
IPC分类号： H01L21/302
CPC分类号： H01L21/02074 , H01L21/3212 , H01L21/7684
摘要： A process for treating a copper or copper alloy substrate surface with a composition and corrosion inhibitor solution to minimize defect formation and surface corrosion, the method including applying a composition including one or more chelating agents, a pH adjusting agent to produce a pH between about 3 and about 11, and deionized water, and then applying a corrosion inhibitor solution. The composition may further comprise a reducing agent and/or corrosion inhibitor. The method may further comprise applying the corrosion inhibitor solution prior to treating the substrate surface with the composition.
摘要翻译：一种用组合物和腐蚀抑制剂溶液处理铜或铜合金基材表面以最小化缺陷形成和表面腐蚀的方法，该方法包括施加包含一种或多种螯合剂的组合物，pH调节剂以产生约3 约11，去离子水，然后涂上缓蚀剂溶液。组合物还可以包含还原剂和/或缓蚀剂。该方法还可以包括在用组合物处理基材表面之前施加腐蚀抑制剂溶液。

5. 发明授权

US07041599B1 High through-put Cu CMP with significantly reduced erosion and dishing 失效
标题翻译：高通量Cu CMP具有显着减少的侵蚀和凹陷
公开(公告)号：US07041599B1
公开(公告)日：2006-05-09
申请号：US09469709
申请日：1999-12-21
申请人： Shijian Li , Fred C. Redeker , John White , Ramin Emami
发明人： Shijian Li , Fred C. Redeker , John White , Ramin Emami
IPC分类号： H01L21/302
CPC分类号： B24B37/04 , B24B57/02 , H01L21/3212
摘要： High through-put Cu CMP is achieved with reduced erosion and dishing by a multi-step polishing technique. Deposited Cu is polished with fixed abrasive polishing pads initially at a high removal rate and subsequently at a reduced removal rate and high Cu:barrier layer (Ta) selectivity. Embodiments of the present invention include reducing dishing by: controlling platen rotating speeds; increasing the concentration of active chemicals; and cleaning the polishing pads between wafers. Embodiments also include removing particulate material during CMP by increasing the flow rate of the chemical agent or controlling the static etching rate between about 100 Å and about 150 Å per minute, and recycling the chemical agent. Embodiments further include flowing an inhibitor across the wafer surface after each CMP step to reduce the static etching rate.
摘要翻译：通过多步抛光技术，可以减少腐蚀和凹陷，实现高通量Cu CMP。沉积的Cu以固定的研磨抛光垫抛光，最初以高的去除速率和随后的降低的去除速率和高的Cu：阻挡层（Ta）选择性。本发明的实施例包括：通过以下步骤减少凹陷：控制压板转速; 增加活性化学品的浓度; 并在晶片之间清洁抛光垫。实施方案还包括通过增加化学试剂的流速或控制每分钟约100埃至约150埃的静态蚀刻速率和循环该化学试剂来在CMP期间除去颗粒物质。实施例还包括在每个CMP步骤之后使抑制剂流过晶片表面以降低静态蚀刻速率。

6. 发明授权

US06960521B2 Method and apparatus for polishing metal and dielectric substrates 失效
标题翻译：抛光金属和电介质基板的方法和装置
公开(公告)号：US06960521B2
公开(公告)日：2005-11-01
申请号：US10939750
申请日：2004-09-13
申请人： Yongsik Moon , David Mai , Kapila Wijekoon , Rajeev Bajaj , Rahul Surana , Yongqi Hu , Tony S. Kaushal , Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , Fred C. Redeker
发明人： Yongsik Moon , David Mai , Kapila Wijekoon , Rajeev Bajaj , Rahul Surana , Yongqi Hu , Tony S. Kaushal , Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , Fred C. Redeker
IPC分类号： B24B1/00 , B24B5/00 , B24B29/00 , B24B37/04 , C23F1/00 , H01L21/306 , H01L21/321 , H01L21/461 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/3212 , B24B37/042 , B24B37/30 , H01L21/7684
摘要： Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.
摘要翻译：提供了用于抛光衬底的方法和装置，其包括具有降低或最小衬底表面损伤和分层的导电和低k电介质材料。在一个方面，提供了一种用于处理衬底的方法，包括将具有形成在其上的导电材料的衬底定位在具有一个或多个旋转载体头和一个或多个可旋转压板的抛光设备中，其中所述载体头包括保持环和用于固定基板的薄膜和压板具有设置在其上的抛光制品，其以约0.4psi或更大于膜压力的保持环接触压力将基板表面和抛光制品彼此接触，并抛光基板以去除导电材料。

7. 发明授权

US06872329B2 Chemical mechanical polishing composition and process 失效
标题翻译：化学机械抛光组合物和工艺
公开(公告)号：US06872329B2
公开(公告)日：2005-03-29
申请号：US09842476
申请日：2001-04-25
申请人： Yuchun Wang , Rajeev Bajaj , Fred C. Redeker , Shijian Li
发明人： Yuchun Wang , Rajeev Bajaj , Fred C. Redeker , Shijian Li
IPC分类号： B24B37/04 , C09G1/02 , H01L21/321 , C09K13/00 , C09K13/04 , C09K13/06 , H01L21/302
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/02
摘要： A method and composition for planarizing a substrate surface is provided. The polishing composition includes an oxidizer capable of oxidizing a metal undergoing planarization and yielding a complexing agent which complexes with the oxidized metal and a stabilizer such as a stannate salt. The composition may further include abrasive particles and/or inhibitors. The composition may be used in a multi-step polishing process including polishing a substrate surface to selectively remove a metal layer with respect to a barrier layer and dielectric layer and polishing a substrate surface using the composition to non-selectively remove the metal layer, a barrier layer, and a dielectric layer from the substrate surface.
摘要翻译：提供了用于平坦化基板表面的方法和组合物。抛光组合物包括能够氧化经历平坦化的金属并产生与氧化金属络合的络合剂和稳定剂如锡酸盐的氧化剂。组合物还可以包括研磨颗粒和/或抑制剂。组合物可以用于多步抛光工艺中，包括抛光衬底表面以相对于阻挡层和电介质层选择性去除金属层，并使用该组合物抛光衬底表面以非选择性地去除金属层，阻挡层和介电层。

8. 发明授权

US06669538B2 Pad cleaning for a CMP system 失效
标题翻译： CMP系统的垫清洁
公开(公告)号：US06669538B2
公开(公告)日：2003-12-30
申请号：US09512745
申请日：2000-02-24
申请人： Shijian Li , Ramin Emami , Sen-Hou Ko , Shi-Ping Wang , Fred C. Redeker , Lizhong Sun , Stan Tsai
发明人： Shijian Li , Ramin Emami , Sen-Hou Ko , Shi-Ping Wang , Fred C. Redeker , Lizhong Sun , Stan Tsai
IPC分类号： B24B100
CPC分类号： B24B53/017
摘要： The present invention generally provides a system and apparatus for cleaning a polishing pad, such as a fixed abrasive pad, in a substrate processing system. In one embodiment, the system includes one or more nozzles which spray a fluid at pressures of about 30 psi to about 300 psi or greater, as measured at the nozzle, onto a polishing pad at acute angles to the surface of the polishing pad. The nozzles can spray downward and outward toward the perimeter of the pad to facilitate the debris removal therefrom. The system can include a pressure source to produce a sufficient fluid pressure substantially higher than the typical fluid pressure available from a facility installation.
摘要翻译：本发明通常提供一种用于在衬底处理系统中清洁抛光垫，例如固定研磨垫的系统和装置。在一个实施例中，该系统包括一个或多个喷嘴，其以在喷嘴处测量的约30psi至约300psi或更大的压力喷射流体至抛光垫的表面的锐角处的抛光垫上。喷嘴可以朝向垫的周边向下和向外喷射以便于从其中移除碎片。该系统可以包括压力源以产生足够的流体压力，该流体压力显着高于可从设施设施获得的典型流体压力。

9. 发明授权

US06432826B1 Planarized Cu cleaning for reduced defects 失效
标题翻译：平面化的Cu清洁，减少缺陷
公开(公告)号：US06432826B1
公开(公告)日：2002-08-13
申请号：US09450479
申请日：1999-11-29
申请人： Ramin Emami , Shijian Li , Sen-Hou Ko , Fred C. Redeker , Madhavi Chandrachood
发明人： Ramin Emami , Shijian Li , Sen-Hou Ko , Fred C. Redeker , Madhavi Chandrachood
IPC分类号： H01L21302
CPC分类号： H01L21/02074 , H01L21/3212 , H01L21/7684
摘要： Cu metallization is treated to reduce defects and effect passivation by removing a thin surface layer or removing corrosion stains, subsequent to CMP and barrier layer removal, employing a cleaning composition comprising deionized water, an acid and ammonium hydroxide and/or an amine. Embodiments include removing up to about 100 Å of the Cu metallization surface in a damascene opening by sequentially treating the exposed Cu surface with: an optional corrosion inhibitor; a solution having a pH of about 4 to about 11 and containing an acid, ammonium hydroxide and/or an amine, and deionized water; and a corrosion inhibitor.
摘要翻译：通过使用包含去离子水，酸和氢氧化铵和/或胺的清洁组合物，在CMP和阻隔层去除之后，通过去除薄的表面层或去除腐蚀污渍来处理Cu金属化以减少缺陷并实现钝化。实施例包括通过用任意的腐蚀抑制剂依次处理暴露的Cu表面，在镶嵌开口中去除多达约100埃的Cu金属化表面; pH为约4至约11并含有酸，氢氧化铵和/或胺的溶液和去离子水; 和腐蚀抑制剂。

10. 发明授权

US5761023A Substrate support with pressure zones having reduced contact area and temperature feedback 失效
标题翻译：具有减小的接触面积和温度反馈的压力区的基板支撑
公开(公告)号：US5761023A
公开(公告)日：1998-06-02
申请号：US641147
申请日：1996-04-25
申请人： Brian Lue , Tetsuya Ishikawa , Fred C. Redeker , Manus Wong , Shijian Li
发明人： Brian Lue , Tetsuya Ishikawa , Fred C. Redeker , Manus Wong , Shijian Li
IPC分类号： H01L21/302 , G03F7/20 , H01L21/205 , H01L21/3065 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6875 , G03F7/707 , G03F7/70708 , H01L21/6833
摘要： An improved substrate support and method for operating in which multiple pressure zones are provided on the surface of the substrate support. A seal area is provided between the different zones to allow different gas pressures in the two zones. A higher gas pressure is provided to a zone corresponding to an area of the substrate where greater heat transfer is desired. The gap between the substrate support and the gas pressure are selected to provide the desired amount of heat transfer. Another aspect is limited substrate contact using protrusions, to maximize heat transfer gas flow. A closed loop control system varies the heat transfer gas pressure in accordance with a temperature sensor. For an electrostatic chuck, the dielectric thickness is varied to give a higher electrostatic force at the periphery of the substrate.
摘要翻译：改进的基板支撑件和操作方法，其中多个压力区域设置在基板支撑件的表面上。在不同区域之间设置密封区域以允许两个区域中的不同气体压力。更高的气体压力被提供给对应于需要更大热传递的基底区域的区域。选择衬底支撑件和气体压力之间的间隙以提供所需量的热传递。另一方面是使用突起限制衬底接触，以使热传递气流最大化。闭环控制系统根据温度传感器改变传热气体压力。对于静电卡盘，电介质厚度是变化的，以便在衬底的周围产生较高的静电力。

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