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1. 发明授权

US06465051B1 Method of operating high density plasma CVD reactor with combined inductive and capacitive coupling 失效
标题翻译：操作具有组合电感和电容耦合的高密度等离子体CVD反应堆的方法
公开(公告)号：US06465051B1
公开(公告)日：2002-10-15
申请号：US08751899
申请日：1996-11-18
申请人： Turgut Sahin , Fred C. Redeker , Romuald Nowak , Shijian Li , Timothy Dyer , Derek R. Witty
发明人： Turgut Sahin , Fred C. Redeker , Romuald Nowak , Shijian Li , Timothy Dyer , Derek R. Witty
IPC分类号： H05H146
CPC分类号： H01J37/32862 , C23C16/4405 , H01J37/32082
摘要： The invention is embodied in a method of cleaning a plasma reactor by creating a vacuum in the chamber while introducing an etchant gas into the chamber through the gas injection ports, and applying RF energy to a ceiling electrode in the chamber while not necessarily applying RF energy to the coil antenna, so as to strike a predominantly capacitively coupled plasma in the vacuum chamber. In another embodiment the method includes, whenever the reactor is to be operated in an inductive coupling mode, applying RF power to the reactors coil antenna while grounding the ceiling electrode, and whenever the reactor is to be operated in a capacitive coupling mode, applying RF power to the ceiling electrode, and whenever the reactor is to be cleaned, cleaning the reactor by applying RF power to the ceiling electrode and to the coil antenna while introducing an etchant gas into the vacuum chamber. In yet another embodiment the method includes performing chemical vapor deposition on a wafer by introducing a deposition precursor gas into the chamber while maintaining an inductively coupled plasma therein by applying RF power to the coil antenna while grounding the ceiling electrode, and cleaning the reactor by introducing a precursor cleaning gas into the chamber while maintaining a capacitively coupled plasma in the chamber by applying RF power to the ceiling electrode.
摘要翻译：本发明体现在一种通过在室中产生真空来清洁等离子体反应器的方法，同时通过气体注入口将蚀刻剂气体引入室中，并且将RF能量施加到室中的顶板电极，而不一定施加RF能量到线圈天线，以便在真空室中击穿主要电容耦合的等离子体。在另一个实施例中，该方法包括：每当反应器以电感耦合模式工作时，在将天线电极接地的同时向反应器线圈天线施加RF功率，并且每当反应器以电容耦合模式工作时，施加RF 电源到天花板电极，并且每当要清洁反应堆时，通过向天花板电极和线圈天线施加RF功率来清洁反应器，同时将蚀刻剂气体引入真空室。在另一个实施方案中，该方法包括通过将沉积前体气体引入室中，同时通过在将天线电极接地的同时向线圈天线施加RF功率来维持其中的电感耦合等离子体来执行化学气相沉积，并通过引入来清洁反应器前体清洗气体进入室，同时通过向天花板电极施加RF功率来在室内维持电容耦合的等离子体。

2. 发明授权

US06220201B1 High density plasma CVD reactor with combined inductive and capacitive coupling 失效
标题翻译：具有组合电感和电容耦合的高密度等离子体CVD反应堆
公开(公告)号：US06220201B1
公开(公告)日：2001-04-24
申请号：US09111625
申请日：1998-07-07
申请人： Romuald Nowak , Kevin Fairbairn , Fred C. Redeker
发明人： Romuald Nowak , Kevin Fairbairn , Fred C. Redeker
IPC分类号： C23C1600
CPC分类号： H01J37/32091 , H01J37/321 , H01J37/3244
摘要： The invention is embodied in a plasma reactor having a vacuum chamber with a cylindrical side portion and a ceiling at a certain height above the top of the cylindrical side portion, a wafer-holding pedestal near the bottom of the vacuum chamber, gas injection ports near the cylindrical side portion and a vacuum pump, the reactor including a generally planar disk-shaped conductive ceiling electrode adjacent the ceiling, a helical coil antenna having a bottom winding near the top of the cylindrical side portion and a top winding generally corresponding to the second diameter near the planar disk-shaped conductive ceiling electrode, the helical coil antenna substantially spanning the height between the top of the cylindrical side portion and the ceiling, and a switch for individually connecting each one of the coil antenna, the ceiling electrode and the wafer pedestal to one of (a) a respective RF power source or (b) ground or (c) a floating potential (i.e., unconnected to any potential source). The invention is also embodied in a plasma reactor having a vacuum chamber, a wafer-holding pedestal near the bottom of the vacuum chamber, gas injection ports and a vacuum pump, the reactor including a conductive ceiling electrode at the top of the chamber, a coil antenna having a top generally coplanar with the ceiling electrode and a base generally coinciding with a circumference of the vacuum chamber, and a switch for individually connecting each one of the coil antenna, the ceiling electrode and the wafer pedestal to one of (a) a respective RF power source, or (b) ground or (c) a floating potential. In one embodiment, the reactor is a chemical vapor deposition plasma reactor.
摘要翻译：本发明体现在具有真空室的等离子体反应器中，该真空室具有圆柱形侧部和位于圆柱形侧部顶部上方一定高度的顶部，靠近真空室底部的晶片保持基座，靠近气体注入口的气体注入口圆柱形侧部和真空泵，反应器包括与天花板相邻的大致平面的盘形导电顶板电极，具有靠近圆柱形侧部顶部的底部绕组的螺旋线圈天线和通常对应于第二直径靠近平面盘状导电天花板电极，螺旋线圈天线基本跨越圆柱形侧部的顶部与天花板之间的高度，以及用于单独连接线圈天线，天花板电极和晶片中的每一个的开关（a）相应的RF电源或（b）接地或（c）浮动电位之一（即，未连接到任何电位资源）。本发明还体现在具有真空室，靠近真空室底部的晶片保持基座，气体注入端口和真空泵的等离子体反应器中，该反应器包括位于室顶部的导电天花板电极，线圈天线具有与天花板电极大致共面的顶部和大致与真空室的圆周重合的基座，以及用于将线圈天线，天花板电极和晶片基座中的每一个单独连接到（a）相应的RF电源，或（b）接地或（c）浮动电位。在一个实施方案中，反应器是化学气相沉积等离子体反应器。

3. 发明授权

US5865896A High density plasma CVD reactor with combined inductive and capacitive coupling 失效
标题翻译：具有组合电感和电容耦合的高密度等离子体CVD反应堆
公开(公告)号：US5865896A
公开(公告)日：1999-02-02
申请号：US766053
申请日：1996-12-16
申请人： Romuald Nowak , Kevin Fairbairn , Fred C. Redeker
发明人： Romuald Nowak , Kevin Fairbairn , Fred C. Redeker
IPC分类号： H01J37/32 , C23C16/00 , C23C14/00 , C23F1/02
CPC分类号： H01J37/32091 , H01J37/321 , H01J37/3244
摘要： The invention is embodied in a plasma reactor having a vacuum chamber with a cylindrical side portion and a ceiling at a certain height above the top of the cylindrical side portion, a wafer-holding pedestal near the bottom of the vacuum chamber, gas injection ports near the cylindrical side portion and a vacuum pump, the reactor including a generally planar disk-shaped conductive ceiling electrode adjacent the ceiling, a helical coil antenna having a bottom winding near the top of the cylindrical side portion and a top winding generally corresponding to the second diameter near the planar disk-shaped conductive ceiling electrode, the helical coil antenna substantially spanning the height between the top of the cylindrical side portion and the ceiling, and a switch for individually connecting each one of the coil antenna, the ceiling electrode and the wafer pedestal to one of (a) a respective RF power source or (b) ground or (c) a floating potential (i.e., unconnected to any potential source). The invention is also embodied in a plasma reactor having a vacuum chamber, a wafer-holding pedestal near the bottom of the vacuum chamber, gas injection ports and a vacuum pump, the reactor including a conductive ceiling electrode at the top of the chamber, a coil antenna having a top generally coplanar with the ceiling electrode and a base generally coinciding with a circumference of the vacuum chamber, and a switch for individually connecting each one of the coil antenna, the ceiling electrode and the wafer pedestal to one of (a) a respective RF power source, or (b) ground or (c) a floating potential. In one embodiment, the reactor is a chemical vapor depostion plasma reactor.
摘要翻译：本发明体现在具有真空室的等离子体反应器中，该真空室具有圆柱形侧部和位于圆柱形侧部顶部上方一定高度的顶部，靠近真空室底部的晶片保持基座，靠近气体注入口的气体注入口圆柱形侧部和真空泵，反应器包括与天花板相邻的大致平面的盘状导电顶板电极，具有靠近圆柱形侧部顶部的底部绕组的螺旋线圈天线和通常对应于第二直径靠近平面盘状导电天花板电极，螺旋线圈天线基本跨越圆柱形侧部的顶部与天花板之间的高度，以及用于单独连接线圈天线，天花板电极和晶片中的每一个的开关（a）相应的RF电源或（b）接地或（c）浮动电位之一（即，未连接到任何电位资源）。本发明还体现在具有真空室，靠近真空室底部的晶片保持基座，气体注入端口和真空泵的等离子体反应器中，该反应器包括位于室顶部的导电天花板电极，线圈天线具有与天花板电极大致共面的顶部和大致与真空室的圆周重合的基座，以及用于将线圈天线，天花板电极和晶片基座中的每一个单独连接到（a）相应的RF电源，或（b）接地或（c）浮动电位。在一个实施方案中，反应器是化学气相沉积等离子体反应器。

4. 发明授权

US06182602B2 Inductively coupled HDP-CVD reactor 失效
标题翻译：电感耦合HDP-CVD反应器
公开(公告)号：US06182602B2
公开(公告)日：2001-02-06
申请号：US08865018
申请日：1997-05-29
申请人： Fred C. Redeker , Romuald Nowak , Tetsuya Ishikawa , Troy Detrick , Jay Dee Pinson, II
发明人： Fred C. Redeker , Romuald Nowak , Tetsuya Ishikawa , Troy Detrick , Jay Dee Pinson, II
IPC分类号： C23C1600
CPC分类号： H01J37/32449 , C23C16/507 , H01J37/321 , H01J37/32467 , H01J37/32522 , H01J37/32862
摘要： The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.
摘要翻译：本发明提供一种HDP-CVD工具，其使用能够在晶片上具有优异的间隙填充和覆盖膜沉积的掺杂和未掺杂的二氧化硅的同时沉积和溅射。本发明的工具包括：双RF区电感耦合等离子体源; 双区气体分配系统; 工具内的温度控制表面; 对称成形的涡轮分子抽水室体; 双冷却区静电吸盘; 全陶瓷/铝合金室; 和远程等离子体室清洁系统。

5. 发明授权

US07232761B2 Method of chemical mechanical polishing with high throughput and low dishing 失效
标题翻译：化学机械抛光方法，具有高通量和低凹陷
公开(公告)号：US07232761B2
公开(公告)日：2007-06-19
申请号：US10924417
申请日：2004-08-24
申请人： Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , David Mai , Fred C. Redeker
发明人： Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , David Mai , Fred C. Redeker
IPC分类号： H01L21/461
CPC分类号： H01L21/3212 , B24B37/042 , B24B37/30 , H01L21/7684
摘要： Method and apparatus are provided for polishing conductive materials with low dishing of features and reduced or minimal remaining residues. In one aspect, a method is provided for processing a substrate by polishing the substrate to remove bulk conductive material and polishing the substrate by a ratio of carrier head rotational speed to platen rotational speed of between about 2:1 and about 3:1 to remove residual conductive material. In another aspect, a method is provided for processing a substrate including polishing the substrate at a first relative linear velocity between about 600 mm/second and about 1900 mm/second at the center of the substrate, and polishing the substrate at a second relative linear velocity between about 100 mm/second and about 550 mm/second at the center of the substrate.
摘要翻译：提供了用于抛光导电材料的方法和装置，其具有低的特征凹陷和减少的或最小的剩余残余物。在一个方面，提供了一种通过抛光衬底以去除体导电材料并通过载体头部旋转速度与平板旋转速度的比率在约2:1至约3:1之间来抛光衬底来进行衬底处理的方法，以去除残留导电材料。在另一方面，提供了一种用于处理衬底的方法，包括在衬底的中心以约600mm /秒至约1900mm /秒的第一相对线速度抛光衬底，并以第二相对线性在衬底的中心处的速度在约100mm /秒到约550mm /秒之间。

6. 发明授权

US07220322B1 Cu CMP polishing pad cleaning 失效
标题翻译： Cu CMP抛光垫清洗
公开(公告)号：US07220322B1
公开(公告)日：2007-05-22
申请号：US09645690
申请日：2000-08-24
申请人： Lizhong Sun , Shijian Li , Fred C. Redeker
发明人： Lizhong Sun , Shijian Li , Fred C. Redeker
IPC分类号： B08B7/04 , H01L21/302
CPC分类号： B24B53/017
摘要： A polishing pad is cleaned of Cu CMP by-products, subsequent to planarizing a wafer, to reduce pad-glazing by applying to the polishing pad surface a composition comprising about 0.1 to about 3.0 wt. % of at least one organic compound having one or more amine or amide groups, an acid or a base in an amount sufficient to adjust the pH of the composition to about 5.0 to about 12.0, the remainder water. Embodiments comprise ex situ cleaning of a rotating polishing pad by applying a solution having a pH of about 5.0 to about 12.0 at a flow rate of about 100 to about 600 ml/min. for about 3 to about 20 seconds after polishing a wafer having a Cu-containing surface and then removing the cleaning solution from the polishing pad by high pressure rinsing with water.
摘要翻译：在平坦化晶片之后，将抛光垫清除为Cu CMP副产物，通过向抛光垫表面施加包含约0.1至约3.0重量％的组合物的组合物来减少垫玻璃。％的至少一种具有一个或多个胺或酰胺基团的有机化合物，酸或碱的量足以将组合物的pH调节至约5.0至约12.0，其余为水。实施例包括通过以约100至约600ml / min的流速施加pH为约5.0至约12.0的溶液来旋转抛光垫的原位清洁。在研磨具有含Cu表面的晶片之后约3至约20秒，然后通过用水高压冲洗从抛光垫除去清洁溶液。

7. 发明授权

US06991517B2 Linear polishing sheet with window 失效
公开(公告)号：US06991517B2
公开(公告)日：2006-01-31
申请号：US10814405
申请日：2004-03-31
申请人： Fred C. Redeker , Manoocher Birang , Shijian Li , Sasson Somekh
发明人： Fred C. Redeker , Manoocher Birang , Shijian Li , Sasson Somekh
IPC分类号： B24B1/00
CPC分类号： B24B37/005 , B24B21/04 , B24B49/04 , B24B49/12 , H01L21/30625
摘要： A polishing article for chemical mechanical polishing. The polishing article includes a generally elongated polishing sheet with a polishing surface. The polishing article is formed from a material that is substantially opaque, and has a discrete region extending substantially the length of the polishing sheet that is at least semi-transparent.

8. 发明授权

US06833052B2 Deposition chamber and method for depositing low dielectric constant films 失效
标题翻译：沉积室和沉积低介电常数膜的方法
公开(公告)号：US06833052B2
公开(公告)日：2004-12-21
申请号：US10283565
申请日：2002-10-29
申请人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
发明人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
IPC分类号： C23F1600
CPC分类号： C23C16/45574 , C23C16/401 , C23C16/45512 , C23C16/45514 , C23C16/45576 , H01J37/3244
摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.
摘要翻译：改进的沉积室（2）包括限定容纳衬底支撑件（14）的腔室（18）的壳体（4）。氧和SiF 4的混合物通过一组第一喷嘴（34）输送，并且硅烷通过一组第二喷嘴（34a）输送到围绕衬底支撑件的周边（40）的腔室中。将硅烷（或硅烷和SiF 4的混合物）和氧分别从孔口（64,76）中心地注入到基底上方的腔室中。气体的均匀分散与每种气体的最佳流速相结合，导致薄膜均匀低（低于3.4）的介电常数。

9. 发明授权

US06780773B2 Method of chemical mechanical polishing with high throughput and low dishing 失效
标题翻译：化学机械抛光方法，具有高通量和低凹陷
公开(公告)号：US06780773B2
公开(公告)日：2004-08-24
申请号：US10193469
申请日：2002-07-11
申请人： Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , David Mai , Fred C. Redeker
发明人： Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , David Mai , Fred C. Redeker
IPC分类号： H01L21641
CPC分类号： H01L21/3212 , B24B37/042 , B24B37/30 , H01L21/7684
摘要： Method and apparatus are provided for polishing conductive materials with low dishing of features and reduced or minimal remaining residues. In one aspect, a method is provided for processing a substrate by polishing the substrate to remove bulk conductive material and polishing the substrate by a ratio of carrier head rotational speed to platen rotational speed of between about 2:1 and about 3:1 to remove residual conductive material. In another aspect, a method is provided for processing a substrate including polishing the substrate at a first relative linear velocity between about 600 mm/second and about 1900 mm/second at the center of the substrate, and polishing the substrate at a second relative linear velocity between about 100 mm/second and about 550 mm/second at the center of the substrate.
摘要翻译：提供了用于抛光导电材料的方法和装置，其具有低的特征凹陷和减少的或最小的剩余残余物。在一个方面，提供了一种通过抛光衬底以去除体导电材料并通过载体头部旋转速度与平板旋转速度的比率在约2:1至约3:1之间来抛光衬底来进行衬底处理的方法，以去除残留导电材料。在另一方面，提供了一种用于处理衬底的方法，包括在衬底的中心以约600mm /秒至约1900mm /秒的第一相对线速度抛光衬底，并以第二相对线性在衬底的中心处的速度在约100mm /秒到约550mm /秒之间。

10. 发明授权

US06589610B2 Deposition chamber and method for depositing low dielectric constant films 失效
公开(公告)号：US06589610B2
公开(公告)日：2003-07-08
申请号：US10174453
申请日：2002-06-17
申请人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
发明人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
IPC分类号： C23C16455
CPC分类号： C23C16/45574 , C23C16/401 , C23C16/45512 , C23C16/45514 , C23C16/45576 , H01J37/3244
摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.

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