专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07413627B2 Deposition chamber and method for depositing low dielectric constant films 有权
标题翻译：沉积室和沉积低介电常数膜的方法
公开(公告)号：US07413627B2
公开(公告)日：2008-08-19
申请号：US10997311
申请日：2004-11-23
申请人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
发明人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
IPC分类号： H01L21/3065 , C23C16/455 , C23C16/505
CPC分类号： C23C16/45574 , C23C16/401 , C23C16/45512 , C23C16/45514 , C23C16/45576 , H01J37/3244
摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.
摘要翻译：改进的沉积室（2）包括限定容纳衬底支撑件（14）的腔室（18）的壳体（4）。氧和SiF 4的混合物通过一组第一喷嘴（34）输送，并且硅烷通过一组第二喷嘴（34a）被输送到周围（40）的腔室内底物支撑。将硅烷（或硅烷和SiF 4 Si的混合物）和氧分别从孔口（64,76）中心地注入到基底上方的腔室中。气体的均匀分散与每种气体的最佳流速相结合，导致薄膜均匀低（低于3.4）的介电常数。

2. 发明授权

US06833052B2 Deposition chamber and method for depositing low dielectric constant films 失效
标题翻译：沉积室和沉积低介电常数膜的方法
公开(公告)号：US06833052B2
公开(公告)日：2004-12-21
申请号：US10283565
申请日：2002-10-29
申请人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
发明人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
IPC分类号： C23F1600
CPC分类号： C23C16/45574 , C23C16/401 , C23C16/45512 , C23C16/45514 , C23C16/45576 , H01J37/3244
摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.
摘要翻译：改进的沉积室（2）包括限定容纳衬底支撑件（14）的腔室（18）的壳体（4）。氧和SiF 4的混合物通过一组第一喷嘴（34）输送，并且硅烷通过一组第二喷嘴（34a）输送到围绕衬底支撑件的周边（40）的腔室中。将硅烷（或硅烷和SiF 4的混合物）和氧分别从孔口（64,76）中心地注入到基底上方的腔室中。气体的均匀分散与每种气体的最佳流速相结合，导致薄膜均匀低（低于3.4）的介电常数。

3. 发明授权

US06589610B2 Deposition chamber and method for depositing low dielectric constant films 失效
公开(公告)号：US06589610B2
公开(公告)日：2003-07-08
申请号：US10174453
申请日：2002-06-17
申请人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
发明人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
IPC分类号： C23C16455
CPC分类号： C23C16/45574 , C23C16/401 , C23C16/45512 , C23C16/45514 , C23C16/45576 , H01J37/3244
摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.

4. 发明授权

US06416823B2 Deposition chamber and method for depositing low dielectric constant films 有权
公开(公告)号：US06416823B2
公开(公告)日：2002-07-09
申请号：US09515574
申请日：2000-02-29
申请人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
发明人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
IPC分类号： C23L16455
CPC分类号： C23C16/45574 , C23C16/401 , C23C16/45512 , C23C16/45514 , C23C16/45576 , H01J37/3244
摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.

5. 发明授权

US6070551A Deposition chamber and method for depositing low dielectric constant films 失效
公开(公告)号：US6070551A
公开(公告)日：2000-06-06
申请号：US851856
申请日：1997-05-06
申请人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
发明人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
IPC分类号： C23C16/44 , C23C14/34 , C23C16/40 , C23C16/455 , H01L21/205 , H01L21/31 , C23C16/00
CPC分类号： C23C16/45574 , C23C16/401 , C23C16/45512 , C23C16/45514 , C23C16/45576 , H01J37/3244
摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF.sub.4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF.sub.4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.

6. 发明授权

US06814814B2 Cleaning residues from surfaces in a chamber by sputtering sacrificial substrates 失效
标题翻译：通过溅射牺牲衬底清洁室内表面的残留物
公开(公告)号：US06814814B2
公开(公告)日：2004-11-09
申请号：US10109736
申请日：2002-03-29
申请人： Alan W. Collins , Feng Gao , Tetsuya Ishikawa , Padmanaban Krishnaraj , Yaxin Wang
发明人： Alan W. Collins , Feng Gao , Tetsuya Ishikawa , Padmanaban Krishnaraj , Yaxin Wang
IPC分类号： B08B312
CPC分类号： H01J37/32862 , B08B7/00 , C23C14/564 , C23C16/4405 , Y10S438/905 , Y10S438/906
摘要： In a method of cleaning process residues formed on surfaces in a substrate processing chamber, a sacrificial substrate comprising a sacrificial material is placed in the chamber, a sputtering gas is introduced into the chamber, and the sputtering gas is energized to sputter the sacrificial material from the substrate. The sputtered sacrificial material reacts with residues on the chamber surfaces to clean them. In one version, the sacrificial substrate comprises a silicon-containing material that when sputtered deposits silicon on the chamber walls that reacts with and cleans fluorine-containing species that are left behind by a chamber cleaning process.
摘要翻译：在清洗在基板处理室的表面上形成的工艺残留物的方法中，将包括牺牲材料的牺牲基板放置在室中，将溅射气体引入室中，并且将溅射气体通电以将牺牲材料从底物。溅射的牺牲材料与室表面上的残留物反应以清洁它们。在一个版本中，牺牲衬底包括含硅材料，当溅射时，在室壁上沉积硅，其通过室清洁过程与留下的含氟物质反应并清除含氟物质。

7. 发明授权

US06486081B1 Gas distribution system for a CVD processing chamber 有权
标题翻译：用于CVD处理室的气体分配系统
公开(公告)号：US06486081B1
公开(公告)日：2002-11-26
申请号：US09449203
申请日：1999-11-24
申请人： Tetsuya Ishikawa , Padmanabhan Krishnaraj , Feng Gao , Alan W. Collins , Lily Pang
发明人： Tetsuya Ishikawa , Padmanabhan Krishnaraj , Feng Gao , Alan W. Collins , Lily Pang
IPC分类号： H01L2131
CPC分类号： C23C16/45514 , C23C16/401 , C23C16/4411 , C23C16/455 , C23C16/45563 , C23C16/45578 , C23C16/507 , H01J37/3244 , H01L21/67069
摘要： The present invention provides an apparatus for depositing a film on a substrate comprising a processing chamber, a substrate support member disposed within the chamber, a first gas inlet, a second gas inlet, a plasma generator and a gas exhaust. The first gas inlet provides a first gas at a first distance from an interior surface of the chamber, and the second gas inlet provides a second gas at a second distance that is closer than the first distance from the interior surface of the chamber. Thus, the second gas creates a higher partial pressure adjacent the interior surface of the chamber to significantly reduce deposition from the first gas onto the interior surface. The present invention also provides a method for depositing a FSG film on a substrate comprising: introducing first gas through a first gas inlet at a first distance from an interior surface of the chamber, and introducing a second gas through a second gas inlet at a second distance from the interior surface of the chamber, wherein the second gas creates a higher partial pressure adjacent the interior surface of the chamber to prevent deposition from the first gas on the interior surface. Alternatively, the first gas is introduced at a different angle from the second gas with respect to a substrate surface.
摘要翻译：本发明提供一种用于在基板上沉积膜的装置，包括处理室，设置在室内的基板支撑件，第一气体入口，第二气体入口，等离子体发生器和排气。第一气体入口从腔室的内表面提供第一距离的第一气体，并且第二气体入口提供第二距离离第二距离距离腔室内表面的第一距离。因此，第二气体在室的内表面附近产生较高的分压，以显着地减少从第一气体到内表面的沉积。本发明还提供了一种用于在衬底上沉积FSG膜的方法，包括：将第一气体通过第一距离腔室的内表面的第一气体入口引入，并将第二气体通过第二气体入口引入第二气体距离室的内表面的距离，其中第二气体在室的内表面附近产生较高的分压，以防止内表面上的第一气体沉积。或者，第一气体相对于衬底表面以与第二气体不同的角度被引入。

8. 发明授权

US6143078A Gas distribution system for a CVD processing chamber 有权
标题翻译：用于CVD处理室的气体分配系统
公开(公告)号：US6143078A
公开(公告)日：2000-11-07
申请号：US191364
申请日：1998-11-13
申请人： Tetsuya Ishikawa , Padmanabhan Krishnaraj , Feng Gao , Alan W. Collins , Lily Pang
发明人： Tetsuya Ishikawa , Padmanabhan Krishnaraj , Feng Gao , Alan W. Collins , Lily Pang
IPC分类号： C23C16/455 , H01L21/00 , H01L21/31 , C23C16/00 , H05H1/00
CPC分类号： H01L21/67017
摘要： The present invention provides an apparatus for depositing a film on a substrate comprising a processing chamber, a substrate support member disposed within the chamber, a first gas inlet, a second gas inlet, a plasma generator and a gas exhaust. The first gas inlet provides a first gas at a first distance from an interior surface of the chamber, and the second gas inlet provides a second gas at a second distance that is closer than the first distance from the interior surface of the chamber. Thus, the second gas creates a higher partial pressure adjacent the interior surface of the chamber to significantly reduce deposition from the first gas onto the interior surface. The present invention also provides a method for depositing a film on a substrate comprising: providing a chemical vapor deposition chamber, introducing first gas through a first gas inlet at a first distance from an interior surface of the chamber, introducing a second gas through a second gas inlet at a second distance from the interior surface of the chamber, wherein the second gas creates a higher partial pressure adjacent the interior surface of the chamber to prevent deposition from the first gas on the interior surface and generating a plasma of the processing gases. Alternatively, the first gas is introduced at a different angle from the second gas with respect to a substrate surface.
摘要翻译：本发明提供一种用于在基板上沉积膜的装置，包括处理室，设置在室内的基板支撑构件，第一气体入口，第二气体入口，等离子体发生器和排气。第一气体入口从腔室的内表面提供第一距离的第一气体，并且第二气体入口提供第二距离离第二距离距离腔室内表面的第一距离。因此，第二气体在室的内表面附近产生较高的分压，以显着地减少从第一气体到内表面的沉积。本发明还提供了一种在衬底上沉积膜的方法，包括：提供化学气相沉积室，将第一气体通过第一距离腔室内表面的第一距离处的第一气体入口引入第二气体，气体入口距离室的内表面第二距离，其中第二气体在室的内表面附近产生较高的分压，以防止从内表面上的第一气体沉积并产生处理气体的等离子体。或者，第一气体相对于衬底表面以与第二气体不同的角度被引入。

9. 发明授权

US06633076B2 Methods and apparatus for producing stable low k FSG film for HDP-CVD 失效
标题翻译：用于生产用于HDP-CVD的稳定的低k FSG膜的方法和设备
公开(公告)号：US06633076B2
公开(公告)日：2003-10-14
申请号：US10283996
申请日：2002-10-30
申请人： Padmanabhan Krishnaraj , Robert Duncan , Joseph D'Souza , Alan W. Collins , Nasreen Chopra , Kimberly Branshaw
发明人： Padmanabhan Krishnaraj , Robert Duncan , Joseph D'Souza , Alan W. Collins , Nasreen Chopra , Kimberly Branshaw
IPC分类号： H01L3100
CPC分类号： H01L21/02131 , C23C16/401 , H01L21/02211 , H01L21/02274 , H01L21/31629 , H01L21/76801 , H01L21/76807
摘要： Methods and apparatus of the present invention deposit fluorinated silicate glass (FSG) in such a manner that it strongly adheres to an overlying or underlying barrier layer or etch stop layer, and has a lower dielectric constant, among other benefits. In one embodiment, silicon tetrafluoride (SiF4), oxygen (O2), and argon (Ar) are used as the reactant gases, with the ratio of oxygen to silicon controlled to be at between about 2:1 to 6:1. Such O2 levels help reduce the amount of degradation of ceramic chamber components otherwise caused by the elimination of silane from the process recipe.
摘要翻译：本发明的方法和装置以这样的方式沉积氟化硅酸盐玻璃（FSG），使得它强烈地粘附到上覆的或下面的阻挡层或蚀刻停止层，并具有较低的介电常数以及其它益处。在一个实施方案中，使用四氟化硅（SiF），氧（O 2 PDAT>）和氩（Ar）作为反应气体，其中氧与硅的比例控制在约2:1至6:1之间。这样的O 2 水平有助于减少陶瓷室组分的降解量，否则由于工艺配方中硅烷的消除而引起。

10. 发明授权

US06715496B2 Method and apparatus for cleaning a semiconductor wafer processing system 失效
标题翻译：用于清洁半导体晶片处理系统的方法和装置
公开(公告)号：US06715496B2
公开(公告)日：2004-04-06
申请号：US10407525
申请日：2003-04-03
申请人： Michael Chiu Kwan , Alan W. Collins , Jalel Hamila , Padmanabhan Krishnaraj , Zhengquan Tan
发明人： Michael Chiu Kwan , Alan W. Collins , Jalel Hamila , Padmanabhan Krishnaraj , Zhengquan Tan
IPC分类号： B08B704
CPC分类号： H01L21/67028 , Y10S134/902 , Y10S438/905
摘要： A method and apparatus for cleaning a semiconductor wafer processing system comprising a turbomolecular pump. In one embodiment, the invention may be reduced to practice by first supplying a cleaning agent to a chamber; pumping the cleaning agent from the chamber through an the exhaust port; at least partially opening a gate valve; and drawing at least a portion of the cleaning agent through the gate valve and into the turbomolecular pump.
摘要翻译：一种用于清洁包括涡轮分子泵的半导体晶片处理系统的方法和装置。在一个实施例中，可以通过首先向腔室供应清洁剂来减少本发明的实践; 通过排气口将清洗剂从室抽出; 至少部分地打开闸阀; 并通过闸阀将至少一部分清洗剂吸入涡轮分子泵中。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式