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1. 发明授权

US07542132B2 Raman spectroscopy as integrated chemical metrology 失效
标题翻译：拉曼光谱作为综合化学计量学
公开(公告)号：US07542132B2
公开(公告)日：2009-06-02
申请号：US11830202
申请日：2007-07-30
申请人： Hongbin Fang , Josh Golden , Timothy W. Weidman , Yaxin Wang , Arulkumar Shanmugasundram
发明人： Hongbin Fang , Josh Golden , Timothy W. Weidman , Yaxin Wang , Arulkumar Shanmugasundram
IPC分类号： G01J3/44 , G01N21/65
CPC分类号： G01N21/65
摘要： A method for measuring the concentration of the metal solution and reducing agent solution within the electroless plating solution is disclosed. Raman spectroscopy is used to measure the concentration of each solution within the electroless plating solution after they have been mixed together. By measuring the concentration of each solution prior to providing the solution to a plating cell, the concentration of the individual solutions can be adjusted so that the targeted concentration of each solution is achieved. Additionally, each solution can be individually analyzed using Raman spectroscopy prior to mixing with the other solutions. Based upon the Raman spectroscopy measurements of the individual solutions prior to mixing, the individual components that make up each solution can be adjusted prior to mixing so that the targeted component concentration can be achieved.
摘要翻译：公开了一种用于测量化学镀溶液中的金属溶液和还原剂溶液的浓度的方法。拉曼光谱法用于测量化学镀溶液混合在一起后每种溶液的浓度。通过在将溶液提供给电镀池之前测量每种溶液的浓度，可以调节各溶液的浓度，从而实现每种溶液的目标浓度。此外，每个溶液可以在与其他溶液混合之前使用拉曼光谱单独分析。基于混合前单个溶液的拉曼光谱测量，可以在混合之前调整组成每种溶液的各个组分，从而可以实现目标组分浓度。

2. 发明授权

US06511923B1 Deposition of stable dielectric films 失效
标题翻译：沉积稳定的介电膜
公开(公告)号：US06511923B1
公开(公告)日：2003-01-28
申请号：US09574404
申请日：2000-05-19
申请人： Yaxin Wang , Michael Barnes , Thanh N. Pham , Farhad Moghadam
发明人： Yaxin Wang , Michael Barnes , Thanh N. Pham , Farhad Moghadam
IPC分类号： H01L2131
CPC分类号： H01L21/31053 , H01L21/31629
摘要： A composite insulating film including three layers is formed on a substrate having a gap. The first layer partially fills the gap and contains a dielectric material having a low dielectric constant, such as halogen-doped silicate glass. The second layer is formed over the first layer, and contains an undoped dielectric material such as silicon oxide, nitride, or oxynitride. The second layer is more stable and integrable, and less susceptible to moisture absorption and outgassing, than the first layer. The second layer is substantially smaller in thickness than the first layer, and at least substantially fills the gap. The third layer is formed over the second layer, and contains a dielectric material having a low dielectric constant, such as halogen-doped silicate glass. In a specific embodiment, the first layer is formed by plasma-enhanced chemical vapor deposition in which reactive species are generated from a process gas mixture by plasma for sputtering the first layer.
摘要翻译：在具有间隙的基板上形成包括三层的复合绝缘膜。第一层部分地填充间隙并且包含具有低介电常数的介电材料，例如掺杂卤素的硅酸盐玻璃。第二层形成在第一层上，并且包含未掺杂的介电材料，例如氧化硅，氮化物或氧氮化物。第二层比第一层更稳定和可整合，较不易吸潮和脱气。第二层的厚度明显小于第一层，并且至少基本上填充间隙。第三层形成在第二层上，并且包含具有低介电常数的电介质材料，例如卤素掺杂的硅酸盐玻璃。在具体实施例中，第一层通过等离子体增强化学气相沉积形成，其中通过等离子体从工艺气体混合物产生反应性物质以溅射第一层。

3. 发明申请

US20090111284A1 METHOD FOR SILICON BASED DIELECTRIC CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：基于硅的介电化学蒸气沉积方法
公开(公告)号：US20090111284A1
公开(公告)日：2009-04-30
申请号：US12348382
申请日：2009-01-05
申请人： Yaxin Wang , Yuji Maeda , Thomas C. Mele , Sean M. Seutter , Sanjeev Tandon , R. Suryanarayanan Iyer
发明人： Yaxin Wang , Yuji Maeda , Thomas C. Mele , Sean M. Seutter , Sanjeev Tandon , R. Suryanarayanan Iyer
IPC分类号： H01L21/314
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/45525 , C23C16/45553 , H01L21/02211 , H01L21/0228 , H01L21/3185 , H01L29/6656 , H01L29/6659 , H01L29/66628 , H01L29/7834
摘要： Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes heating a substrate disposed in a processing chamber to a temperature less than about 550 degrees Celsius; flowing a nitrogen and carbon containing chemical comprising (H3C)—N═N—H into the processing chamber; flowing a silicon-containing source chemical with silicon-nitrogen bonds into the processing chamber; and depositing a silicon and nitrogen containing film on the substrate.
摘要翻译：本发明的实施方案通常提供一种沉积含硅膜的方法。在一个实施例中，用于在衬底上沉积含硅材料膜的方法包括将设置在处理室中的衬底加热到低于约550摄氏度的温度; 将含有（H3C）-N-N-H的含氮和碳的化学品流入处理室; 将含有硅 - 氮键的含硅源化学品流入处理室; 以及在衬底上沉积含硅和氮的膜。

4. 发明授权

US07413627B2 Deposition chamber and method for depositing low dielectric constant films 有权
标题翻译：沉积室和沉积低介电常数膜的方法
公开(公告)号：US07413627B2
公开(公告)日：2008-08-19
申请号：US10997311
申请日：2004-11-23
申请人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
发明人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
IPC分类号： H01L21/3065 , C23C16/455 , C23C16/505
CPC分类号： C23C16/45574 , C23C16/401 , C23C16/45512 , C23C16/45514 , C23C16/45576 , H01J37/3244
摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.
摘要翻译：改进的沉积室（2）包括限定容纳衬底支撑件（14）的腔室（18）的壳体（4）。氧和SiF 4的混合物通过一组第一喷嘴（34）输送，并且硅烷通过一组第二喷嘴（34a）被输送到周围（40）的腔室内底物支撑。将硅烷（或硅烷和SiF 4 Si的混合物）和氧分别从孔口（64,76）中心地注入到基底上方的腔室中。气体的均匀分散与每种气体的最佳流速相结合，导致薄膜均匀低（低于3.4）的介电常数。

5. 发明申请

US20060286818A1 Method for silicon based dielectric chemical vapor deposition 有权
标题翻译：硅基电介质化学气相沉积方法
公开(公告)号：US20060286818A1
公开(公告)日：2006-12-21
申请号：US11155646
申请日：2005-06-17
申请人： Yaxin Wang , Yuji Maeda , Thomas Mele , Sean Seutter , Sanjeev Tandon , R. Iyer
发明人： Yaxin Wang , Yuji Maeda , Thomas Mele , Sean Seutter , Sanjeev Tandon , R. Iyer
IPC分类号： H01L21/471
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/45525 , C23C16/45553 , H01L29/6656 , H01L29/6659 , H01L29/66628 , H01L29/7834
摘要： Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH3)3—N.
摘要翻译：本发明的实施方案通常提供一种沉积含硅膜的方法。在一个实施例中，将含硅材料膜沉积在基板上的方法包括将含氮和碳的化学品流入沉积室，将含有硅 - 氮键的含硅源化学品流入处理室，并加热基板置于室内至低于约550摄氏度的温度。在另一个实施方案中，含硅化学品是三甲基胺，含氮和碳的化学品是（CH 3 3）3 -N。

6. 发明申请

US20060019032A1 Low thermal budget silicon nitride formation for advance transistor fabrication 审中-公开
标题翻译：用于推进晶体管制造的低热预算氮化硅形成
公开(公告)号：US20060019032A1
公开(公告)日：2006-01-26
申请号：US10898547
申请日：2004-07-23
申请人： Yaxin Wang , Suryanarayanan Iyer , Sean Seutter
发明人： Yaxin Wang , Suryanarayanan Iyer , Sean Seutter
IPC分类号： C23C16/00
CPC分类号： H01L21/0217 , C23C16/308 , C23C16/345 , C23C16/45553 , H01L21/02211 , H01L21/02271 , H01L21/0228 , H01L21/3185 , H01L2924/0002 , H01L2924/00
摘要： In one embodiment, a method for depositing a layer containing silicon nitride on a substrate surface is provided which includes positioning a substrate in a process chamber, maintaining the substrate at a predetermined temperature, and exposing the substrate surface to an alkylaminosilane compound and at least one ammonia-free reactant. In another embodiment, a method for depositing a silicon nitride material on a substrate is provided which includes positioning a substrate in a process chamber, maintaining the substrate at a predetermined temperature, and exposing the substrate surface to bis(tertiarybutylamino)silane and a reagent, such as hydrogen, silane and/or disilane.
摘要翻译：在一个实施例中，提供了一种用于在衬底表面上沉积含有氮化硅的层的方法，其包括将衬底定位在处理室中，将衬底保持在预定温度，并将衬底表面暴露于烷基氨基硅烷化合物和至少一个无氨反应物。在另一个实施例中，提供了一种在衬底上沉积氮化硅材料的方法，其包括将衬底定位在处理室中，将衬底保持在预定温度，并将衬底表面暴露于双（叔丁基氨基）硅烷和试剂，例如氢，硅烷和/或乙硅烷。

7. 发明授权

US06211065B1 Method of depositing and amorphous fluorocarbon film using HDP-CVD 失效
标题翻译：使用HDP-CVD沉积非晶碳氟膜的方法
公开(公告)号：US06211065B1
公开(公告)日：2001-04-03
申请号：US08948799
申请日：1997-10-10
申请人： Ming Xi , Eugene Tzou , Lie-Yea Cheng , Turgut Sahin , Yaxin Wang
发明人： Ming Xi , Eugene Tzou , Lie-Yea Cheng , Turgut Sahin , Yaxin Wang
IPC分类号： C23C1622
CPC分类号： B05D1/62 , C23C16/0272 , C23C16/0281 , C23C16/26
摘要： The present invention provides a method of depositing an amorphous fluorocarbon film using a high bias power applied to the substrate on which the material is deposited. The invention contemplates flowing a carbon precursor at rate and at a power level so that equal same molar ratios of a carbon source is available to bind the fragmented fluorine in the film thereby improving film quality while also enabling improved gap fill performance. The invention further provides for improved adhesion of the amorphous fluorocarbon film to metal surfaces by first depositing a metal or TiN adhesion layer on the metal surfaces and then stuffing the surface of the deposited adhesion layer with nitrogen. Adhesion is further improved by coating the chamber walls with silicon nitride or silicon oxynitride.
摘要翻译：本发明提供了一种使用施加到其上沉积材料的衬底的高偏置功率沉积非晶碳氟化合物膜的方法。本发明考虑了以速率和功率水平流动碳前体，使得碳源的相等摩尔比可用于结合薄膜中的碎裂氟，从而提高膜质量，同时还实现改进的间隙填充性能。本发明进一步提供了通过首先在金属表面上沉积金属或TiN粘附层，然后用氮气填充沉积的粘合层的表面来改善非晶碳氟化合物膜对金属表面的粘合性。通过用氮化硅或氮氧化硅涂覆室壁来进一步改善粘合性。

8. 发明授权

US07473655B2 Method for silicon based dielectric chemical vapor deposition 有权
标题翻译：硅基电介质化学气相沉积方法
公开(公告)号：US07473655B2
公开(公告)日：2009-01-06
申请号：US11155646
申请日：2005-06-17
申请人： Yaxin Wang , Yuji Maeda , Thomas C. Mele , Sean M. Seutter , Sanjeev Tandon , R. Suryanarayanan Iyer
发明人： Yaxin Wang , Yuji Maeda , Thomas C. Mele , Sean M. Seutter , Sanjeev Tandon , R. Suryanarayanan Iyer
IPC分类号： H01L21/31
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/45525 , C23C16/45553 , H01L29/6656 , H01L29/6659 , H01L29/66628 , H01L29/7834
摘要： Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH3)3—N.
摘要翻译：本发明的实施方案通常提供一种沉积含硅膜的方法。在一个实施例中，将含硅材料膜沉积在基板上的方法包括将含氮和碳的化学品流入沉积室，将含有硅 - 氮键的含硅源化学品流入处理室，并加热基板置于室内至低于约550摄氏度的温度。在另一个实施方案中，含硅化学品是三甲基胺，含氮和碳的化学品是（CH 3）3 -N。

9. 发明申请

US20070099417A1 Adhesion and minimizing oxidation on electroless CO alloy films for integration with low K inter-metal dielectric and etch stop 审中-公开
标题翻译：粘附和最小化无电解CO合金膜上的氧化，用于与低K金属间电介质和蚀刻停止集成
公开(公告)号：US20070099417A1
公开(公告)日：2007-05-03
申请号：US11329785
申请日：2006-01-10
申请人： Hongbin Fang , Timothy Weidman , Fang Mei , Yaxin Wang , Arulkumar Shanmugasundram , Christopher Bencher , Mehul Naik
发明人： Hongbin Fang , Timothy Weidman , Fang Mei , Yaxin Wang , Arulkumar Shanmugasundram , Christopher Bencher , Mehul Naik
IPC分类号： H01L21/469
CPC分类号： H01L21/76843 , H01L21/76829 , H01L21/76846 , H01L21/76849 , H01L21/76862 , H01L21/76864
摘要： A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on the substrate, reducing oxide formation on the capping layer, and then depositing a dielectric material. A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on a substrate, exposing the capping layer to a plasma, heating the substrate to more than about 100° C., and depositing a low dielectric constant material.
摘要翻译：一种用于处理半导体衬底的方法和装置，包括在形成在衬底上的导电材料上沉积覆盖层，减少覆盖层上的氧化物形成，然后沉积电介质材料。一种用于处理半导体衬底的方法和装置，包括在形成在衬底上的导电材料上沉积覆盖层，将覆盖层暴露于等离子体，将衬底加热到大于约100℃，以及沉积低介电常数材料。

10. 发明申请

US20050150454A1 Deposition chamber and method for depositing low dielectric constant films 有权
标题翻译：沉积室和沉积低介电常数膜的方法
公开(公告)号：US20050150454A1
公开(公告)日：2005-07-14
申请号：US10997311
申请日：2004-11-23
申请人： Shijian Li , Yaxin Wang , Fred Redeker , Tetsuya Ishikawa , Alan Collins
发明人： Shijian Li , Yaxin Wang , Fred Redeker , Tetsuya Ishikawa , Alan Collins
IPC分类号： C23C16/44 , C23C14/34 , C23C16/40 , C23C16/455 , H01L21/205 , H01L21/31 , C23C16/00
CPC分类号： C23C16/45574 , C23C16/401 , C23C16/45512 , C23C16/45514 , C23C16/45576 , H01J37/3244
摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.
摘要翻译：改进的沉积室（2）包括限定容纳衬底支撑件（14）的腔室（18）的壳体（4）。氧和SiF 4的混合物通过一组第一喷嘴（34）输送，并且硅烷通过一组第二喷嘴（34a）被输送到周围（40）的腔室内底物支撑。将硅烷（或硅烷和SiF 4 Si的混合物）和氧分别从孔口（64,76）中心地注入到基底上方的腔室中。气体的均匀分散与每种气体的最佳流速相结合，导致薄膜均匀低（低于3.4）的介电常数。

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