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1. 发明授权

US07374636B2 Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor 失效
标题翻译：在磁场增强等离子体反应器中提供均匀等离子体的方法和装置
公开(公告)号：US07374636B2
公开(公告)日：2008-05-20
申请号：US10205870
申请日：2002-07-26
申请人： Keiji Horioka , Chun Yan , Taeho Shin , Roger Alan Lindley , Panyin Hughes , Douglas H. Burns , Evans Y. Lee , Bryan Y. Pu , Qi Li , Mahmoud Dahimene
发明人： Keiji Horioka , Chun Yan , Taeho Shin , Roger Alan Lindley , Panyin Hughes , Douglas H. Burns , Evans Y. Lee , Bryan Y. Pu , Qi Li , Mahmoud Dahimene
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/32623 , H01J37/3266
摘要： A method and apparatus for controlling a magnetic field gradient within a magnetically enhanced plasma reactor. The apparatus comprises a cathode pedestal supporting a wafer within an enclosure, a plurality of electromagnets positioned proximate the enclosure for producing a magnetic field in the enclosure and a magnetic field control element, positioned proximate the electromagnets, for controlling the magnetic field proximate a specific region of the wafer.
摘要翻译：一种用于控制磁增强等离子体反应器内的磁场梯度的方法和装置。该装置包括支撑外壳内的晶片的阴极基座，靠近外壳定位的多个电磁体，用于在外壳中产生磁场，并且磁场控制元件位于电磁体附近，用于控制靠近特定区域的磁场的晶片。

2. 发明授权

US07316199B2 Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber 失效
标题翻译：用于控制等离子体增强半导体晶片处理室中的磁场强度的方法和装置
公开(公告)号：US07316199B2
公开(公告)日：2008-01-08
申请号：US10146443
申请日：2002-05-14
申请人： Keiji Horioka , Chun Yan , Taeho Shin , Roger Alan Lindley , Qi Li , Panyin Hughes , Douglas H. Burns , Evans Y. Lee , Bryan Y. Pu
发明人： Keiji Horioka , Chun Yan , Taeho Shin , Roger Alan Lindley , Qi Li , Panyin Hughes , Douglas H. Burns , Evans Y. Lee , Bryan Y. Pu
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/32623 , H01J37/3266
摘要： A magnetic field generator for producing a magnetic field that accelerates plasma formation is placed proximate a reaction chamber of semiconductor substrate processing system. The magnetic field generator has four main magnetic coil sections for producing a magnetic field nearly parallel to the top surface of a support pedestal in the reaction chamber and four sub-magnetic coil sections placed generally coaxially with the main magnetic coil sections to produce a magnetic field of the direction opposite of that of the magnetic field produced with the main magnetic coil sections. In the magnetic field generator, magnetic fields of opposite polarities are superimposed on each other when electric currents of opposite directions are applied to the main and sub-magnetic coil sections.
摘要翻译：用于产生加速等离子体形成的磁场的磁场发生器放置在半导体衬底处理系统的反应室附近。磁场发生器具有四个主要的磁线圈部分，用于产生几乎平行于反应室中的支撑基座的顶表面的磁场和与主电磁线圈部分大致同轴放置的四个子磁线圈部分，以产生磁场的方向与由主电磁线圈段产生的磁场的方向相反。在磁场发生器中，相反极性的磁场在施加到主磁亚极部分和次磁线圈部分的相反方向的电流时彼此叠加。

3. 发明授权

US06933239B2 Method for removing conductive residue 失效
标题翻译：去除导电残渣的方法
公开(公告)号：US06933239B2
公开(公告)日：2005-08-23
申请号：US10342087
申请日：2003-01-13
申请人： Chentsau Ying , Xiaoyi Chen , Chun Yan , Ajay Kumar
发明人： Chentsau Ying , Xiaoyi Chen , Chun Yan , Ajay Kumar
IPC分类号： H01L21/3213 , H01L21/302
CPC分类号： H01L43/12 , H01L21/32136
摘要： A method for removing conductive residue from a layer on a semiconductor substrate by exposing the substrate to a gas comprising a fluorine containing gas and a hydrogen containing gas. In one embodiment, the gas is excited to form a plasma that removes the conductive residue during fabrication of a magneto-resistive random access memory (MRAM) device.
摘要翻译：一种通过将衬底暴露于包含含氟气体和含氢气体的气体从半导体衬底上的层去除导电残留物的方法。在一个实施例中，气体被激发以形成在制造磁阻随机存取存储器（MRAM）器件期间除去导电残留物的等离子体。

4. 发明申请

US20060138081A1 Methods for silicon electrode assembly etch rate and etch uniformity recovery 有权
标题翻译：硅电极组件蚀刻速率和蚀刻均匀性恢复方法
公开(公告)号：US20060138081A1
公开(公告)日：2006-06-29
申请号：US11019729
申请日：2004-12-23
申请人： Tuochuan Huang , Daxing Ren , Hong Shih , Catherine Zhou , Chun Yan , Enrico Magni , Bi Yen , Jerome Hubacek , Dae Lim , Dougyong Sung
发明人： Tuochuan Huang , Daxing Ren , Hong Shih , Catherine Zhou , Chun Yan , Enrico Magni , Bi Yen , Jerome Hubacek , Dae Lim , Dougyong Sung
IPC分类号： B44C1/22 , C23F1/00
CPC分类号： H01L21/67069 , B08B3/10 , B08B3/12 , B24C1/003 , H01J37/32605
摘要： Methods for cleaning an electrode assembly, which can be used for etching a dielectric material in a plasma etching chamber after the cleaning, comprise polishing a silicon surface of the electrode assembly, preferably to remove black silicon contamination therefrom.
摘要翻译：用于清洁电极组件的方法，其可以用于在清洁之后蚀刻等离子体蚀刻室中的电介质材料，包括抛光电极组件的硅表面，优选从其中去除黑色硅污染物。

5. 发明申请

US20050009342A1 Method for etching an organic anti-reflective coating (OARC) 审中-公开
标题翻译：蚀刻有机抗反射涂层（OARC）的方法
公开(公告)号：US20050009342A1
公开(公告)日：2005-01-13
申请号：US10616098
申请日：2003-07-08
申请人： Hui Chen , Chun Yan
发明人： Hui Chen , Chun Yan
IPC分类号： H01L21/302 , H01L21/311 , H01L21/461
CPC分类号： H01L21/31138 , H01L21/31144
摘要： A method for etching an organic anti-reflective coating (OARC) using a halogen-free gas chemistry is disclosed. The organic anti-reflective coating (OARC) is etched using a gas mixture comprising at least one of a hydrocarbon-containing gas and an oxygen-containing gas. The method provides high etch selectivity for the organic anti-reflective coating (OARC) over metal layers (e.g., copper (Cu), aluminum (Al), and the like) or dielectric layers (silicon dioxide (SiO2), and the like).
摘要翻译：公开了一种使用无卤素气体化学蚀刻有机抗反射涂层（OARC）的方法。使用包含含烃气体和含氧气体中的至少一种的气体混合物来蚀刻有机抗反射涂层（OARC）。该方法对金属层（例如铜（Cu），铝（Al）等）或电介质层（二氧化硅（SiO 2）等）上的有机抗反射涂层（OARC）提供高蚀刻选择性，。

6. 发明授权

US06620289B1 Method and apparatus for asymmetric gas distribution in a semiconductor wafer processing system 失效
标题翻译：半导体晶片处理系统中不对称气体分布的方法和装置
公开(公告)号：US06620289B1
公开(公告)日：2003-09-16
申请号：US09300563
申请日：1999-04-27
申请人： Chun Yan , Yan Ye , Diana Xiaobing Ma
发明人： Chun Yan , Yan Ye , Diana Xiaobing Ma
IPC分类号： H01L21306
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45502 , H01J37/321 , H01J37/3244 , H01L21/67017 , H01L21/67069
摘要： A method and apparatus for processing a workpiece in a chamber by providing an asymmetric flow of process gas and processing the workpiece with the process gas. The asymmetric flow counteracts a non-uniform distribution of reactive species in the chamber. The asymmetric flow can be accomplished by introducing the process gas through a plurality of gas nozzles that communicate through a side wall of the chamber proximate a pump port while pumping gas with a pump coupled to the pump port. The inventive method can be used with a conventional processing chamber by only opening the gas nozzles closest to the pump and blocking any other gas nozzles. Alternatively, the method can be implemented in a processing chamber having gas nozzles located only proximate the pump port.
摘要翻译：一种用于通过提供工艺气体的非对称流动并用工艺气体处理工件来处理腔室中的工件的方法和装置。不对称流动抵消了室中反应物质的不均匀分布。不对称流动可以通过将工艺气体引入多个气体喷嘴来实现，所述多个气体喷嘴通过邻近泵口的腔室的侧壁连通，同时用连接到泵口的泵泵送气体。本发明的方法可以通过仅打开最靠近泵的气体喷嘴并阻挡任何其它气体喷嘴而与常规处理室一起使用。或者，该方法可以在具有仅位于泵端口附近的气体喷嘴的处理室中实现。

7. 发明申请

US20050079703A1 Method for planarizing an interconnect structure 审中-公开
标题翻译：平面化互连结构的方法
公开(公告)号：US20050079703A1
公开(公告)日：2005-04-14
申请号：US10683143
申请日：2003-10-09
申请人： Hui Chen , Chun Yan , Wai-Fan Yau
发明人： Hui Chen , Chun Yan , Wai-Fan Yau
IPC分类号： C23F3/04 , H01L21/02 , H01L21/321 , H01L21/3213 , H01L21/768 , H01L21/44 , H01L21/4763
CPC分类号： H01L21/02074 , C23F3/04 , H01L21/32115 , H01L21/3212 , H01L21/32136 , H01L21/7684
摘要： A method of forming an interconnect structure (e.g., copper interconnect structure, and the like) on a semiconductor substrate. The interconnect structure is formed by depositing within trenches and openings formed in an inter-metal dielectric (IMD) layer a barrier layer and a conductive material. Thereafter, the interconnect structure is planarized using a two-step process whereby excess conductive material on the IMD material is removed during the first step using a chemical mechanical polishing (CMD) process. In the second step the barrier layer is removed using a plasma etch process. The barrier layer is removed using a gas mixture including a halogen-containing gas.
摘要翻译：在半导体衬底上形成互连结构（例如，铜互连结构等）的方法。互连结构通过在形成于金属间电介质（IMD）层的沟槽和开口内沉积阻挡层和导电材料而形成。此后，使用两步法将互连结构平坦化，由此在第一步骤期间使用化学机械抛光（CMD）工艺除去IMD材料上的过量导电材料。在第二步骤中，使用等离子体蚀刻工艺去除阻挡层。使用包含含卤素气体的气体混合物除去阻挡层。

8. 发明授权

US06352049B1 Plasma assisted processing chamber with separate control of species density 失效
标题翻译：等离子辅助处理室具有单独的物种密度控制
公开(公告)号：US06352049B1
公开(公告)日：2002-03-05
申请号：US09119417
申请日：1998-07-20
申请人： Gerald Yin , Arnold Kolandenko , Hong Ching Shan , Peter Loewenhardt , Chii Lee , Yan Ye , Xueyan Qian , Songlin Xu , Arthur Chen , Arthur Sato , Michael Grimbergen , Diana Ma , John Yamartino , Chun Yan , Wade Zawalski
发明人： Gerald Yin , Arnold Kolandenko , Hong Ching Shan , Peter Loewenhardt , Chii Lee , Yan Ye , Xueyan Qian , Songlin Xu , Arthur Chen , Arthur Sato , Michael Grimbergen , Diana Ma , John Yamartino , Chun Yan , Wade Zawalski
IPC分类号： C23E1648
CPC分类号： H01J37/32871
摘要： The present invention provides an apparatus and method, for plasma assisted processing of a workpiece, which provides for separate control of species density within a processing plasma. The present invention has a processing chamber and at least one collateral chamber. The collateral chamber is capable of generating a collateral plasma and delivering it to the processing chamber. To control the densities of the particle species within the processing chamber the present invention may have: a filter interposed between the collateral chamber and the processing chamber, primary chamber source power, several collateral chambers providing separate inputs to the processing chamber, or combinations thereof. Collateral plasma may be: filtered, combined with primary chamber generated plasma, combined with another collateral plasma, or combinations thereof to separately control the densities of the species comprising the processing plasma.
摘要翻译：本发明提供了一种用于工件的等离子体辅助处理的装置和方法，其提供对处理等离子体内的物质密度的单独控制。本发明具有处理室和至少一个辅助室。辅助室能够产生旁路血浆并将其输送到处理室。为了控制处理室内的颗粒物质的密度，本发明可以具有：插入在侧室和处理室之间的过滤器，主室源功率，向处理室提供单独输入的若干附属室，或其组合。附带等离子体可以是：过滤，与初级室产生的等离子体组合，与另一副侧血浆或其组合组合以分别控制包含处理血浆的物质的密度。

9. 发明授权

US06331380B1 Method of pattern etching a low K dielectric layer 失效
标题翻译：图案蚀刻低K电介质层的方法
公开(公告)号：US06331380B1
公开(公告)日：2001-12-18
申请号：US09549262
申请日：2000-04-14
申请人： Yan Ye , Pavel Ionov , Allen Zhao , Peter Chang-Lin Hsieh , Diana Xiaobing Ma , Chun Yan , Jie Yuan
发明人： Yan Ye , Pavel Ionov , Allen Zhao , Peter Chang-Lin Hsieh , Diana Xiaobing Ma , Chun Yan , Jie Yuan
IPC分类号： G03C558
CPC分类号： H01L21/31138 , H01L21/02115 , H01L21/02118 , H01L21/0212 , H01L21/02274 , H01L21/0274 , H01L21/31116 , H01L21/31144 , H01L21/3127 , H01L21/3146 , H01L21/31612 , H01L21/32136 , H01L21/32139
摘要： A first embodiment of the present invention pertains to a method of patterning a semiconductor device conductive feature while permitting easy removal of any residual masking layer which remains after completion of the etching process. A multi-layered masking structure is used which includes a layer of high-temperature organic-based masking material overlaid by either a patterned layer of inorganic masking material or by a layer of patterned high-temperature imageable organic masking material. The inorganic masking material is used to transfer a pattern to the high-temperature organic-based masking material and is then removed. The high-temperature organic-based masking material is used to transfer the pattern and then may be removed if desired. This method is also useful in the pattern etching of aluminum, even though aluminum can be etched at lower temperatures. A second embodiment of the present invention pertains to a specialized etch chemistry useful in the patterning of organic polymeric layers such as low k dielectrics, or other organic polymeric interfacial layers. This etch chemistry is useful for mask opening during the etch of a conductive layer or is useful in etching damascene structures where a metal fill layer is applied over the surface of a patterned organic-based dielectric layer. The etch chemistry provides for the use of etchant plasma species which minimize oxygen, fluorine, chlorine, and bromine content.
摘要翻译：本发明的第一实施例涉及一种图案化半导体器件导电特征的方法，同时允许容易地去除在蚀刻工艺完成之后保留的任何残留掩模层。使用多层掩模结构，其包括由无机掩模材料的图案化层或由图案化的高温可成像有机掩蔽材料层覆盖的高温有机基掩蔽材料层。无机掩模材料用于将图案转印到高温有机基掩蔽材料上，然后除去。高温有机基掩蔽材料用于转移图案，然后如果需要可以去除。这种方法在铝的图案蚀刻中也是有用的，即使在较低温度下可以蚀刻铝。本发明的第二个实施方案涉及可用于图案化有机聚合物层如低k电介质或其它有机聚合物界面层的专用蚀刻化学物质。该蚀刻化学物质可用于在导电层的蚀刻过程中的掩模开口，或者可用于蚀刻镶嵌结构，其中金属填充层施加在图案化有机基介质层的表面上。蚀刻化学提供了使氧化物，氟，氯和溴含量最小化的蚀刻剂等离子体物质的使用。

10. 发明授权

US06296780B1 System and method for etching organic anti-reflective coating from a substrate 失效
标题翻译：用于从衬底蚀刻有机抗反射涂层的系统和方法
公开(公告)号：US06296780B1
公开(公告)日：2001-10-02
申请号：US08986427
申请日：1997-12-08
申请人： Chun Yan , Yan Ye , Diana Ma
发明人： Chun Yan , Yan Ye , Diana Ma
IPC分类号： H01L213213
CPC分类号： H01L21/31116
摘要： The present invention is embodied in a method and apparatus for etching an organic anti-reflective coating (OARC) layer and a titanium nitride anti-reflective coating (TiN ARC) layer deposited on a substrate located within a processing chamber, without the need for removing the substrate being processed from the processing chamber in which it is situated and without the need for intervening processing steps, such as chamber cleaning operations. The substrate has a base, an underlying oxide layer above the base, an overlying layer above the underlying layer, a middle conductive layer, a TiN ARC layer, and a top OARC layer spun on top of the TiN ARC.
摘要翻译：本发明体现在一种用于蚀刻有机抗反射涂层（OARC）层和沉积在位于处理室内的衬底上的氮化钛抗反射涂层（TiN ARC）层的方法和装置中，而不需要去除基板从其所处理的处理室进行处理，而不需要中间处理步骤，例如室清洁操作。衬底具有基底，在基底上方的下面的氧化物层，在下层上方的上覆层，中间导电层，TiN ARC层和在TiN ARC顶部旋转的顶部OARC层。

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