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1. 发明授权

US06458516B1 Method of etching dielectric layers using a removable hardmask 失效
标题翻译：使用可拆卸硬掩模蚀刻介电层的方法
公开(公告)号：US06458516B1
公开(公告)日：2002-10-01
申请号：US09551255
申请日：2000-04-18
申请人： Yan Ye , Pavel Ionov , Allen Zhao , Peter Hsieh , Diana Ma , Chun Yan , Jie Yuan
发明人： Yan Ye , Pavel Ionov , Allen Zhao , Peter Hsieh , Diana Ma , Chun Yan , Jie Yuan
IPC分类号： G03C556
CPC分类号： H01L21/31138 , H01L21/02115 , H01L21/02118 , H01L21/0212 , H01L21/02274 , H01L21/0274 , H01L21/31116 , H01L21/31144 , H01L21/3127 , H01L21/3146 , H01L21/31612 , H01L21/32136 , H01L21/32139
摘要： A method of patterning a layer of dielectric material having a thickness greater than 1,000 Å, and typically a thickness greater than 5,000 Å. The method is particularly useful for forming a high aspect ratio via or a high aspect ratio contact including self-aligned contact structures, where the aspect ratio is typically greater than 3 and the feature size of the contact is about 0.25 &mgr;m or less. In particular, an organic, polymeric-based masking material is used in a plasma etch process for transferring a desired pattern through an underlying layer of dielectric material. The combination of masking material and plasma source gas must provide the necessary high selectivity toward etching of the underlying layer of dielectric material. The selectivity is preferably greater than 3:1, where the etch rate of the dielectric material is at least 3 times greater than the etch rate of the organic, polymeric-based masking material. The dielectric material may be inorganic, for example, silicon oxide; doped silicon oxide; carbon-containing silicon oxide; SOG; BPSG; and similar materials. The dielectric material may be also be organic, where a high temperature organic-based masking material is used for transferring a desired pattern, and the underlying dielectric material is of a chemical and structural composition which is sufficiently different from the masking material that the required selectivity is provided. In any case, the organic, polymeric-based masking material is easily removed from the substrate etch process after completion of etch without damage to underlying device structures.
摘要翻译：图案化厚度大于1000，通常大于5,000的厚度的电介质材料层的方法。该方法对于形成包括自对准接触结构的高纵横比通孔或高纵横比接触特别有用，其中纵横比通常大于3，接触的特征尺寸为约0.25μm或更小。特别地，在等离子体蚀刻工艺中使用有机的基于聚合物的掩模材料，用于将期望的图案转移通过介电材料的下层。掩模材料和等离子体源气体的组合必须为蚀刻介电材料的下层提供必要的高选择性。选择性优选大于3:1，其中介电材料的蚀刻速率比有机聚合物基掩模材料的蚀刻速率高至少3倍。介电材料可以是无机的，例如氧化硅; 掺杂氧化硅; 含碳氧化硅; SOG; BPSG; 和类似的材料。介电材料也可以是有机的，其中使用高温有机基掩蔽材料来转移所需的图案，并且下面的介电材料具有与掩蔽材料充分不同的化学和结构组成，所需的选择性被提供。在任何情况下，有机的基于聚合物的掩蔽材料在蚀刻完成之后容易地从基底蚀刻工艺中去除而不损坏下面的器件结构

2. 发明授权

US06352049B1 Plasma assisted processing chamber with separate control of species density 失效
标题翻译：等离子辅助处理室具有单独的物种密度控制
公开(公告)号：US06352049B1
公开(公告)日：2002-03-05
申请号：US09119417
申请日：1998-07-20
申请人： Gerald Yin , Arnold Kolandenko , Hong Ching Shan , Peter Loewenhardt , Chii Lee , Yan Ye , Xueyan Qian , Songlin Xu , Arthur Chen , Arthur Sato , Michael Grimbergen , Diana Ma , John Yamartino , Chun Yan , Wade Zawalski
发明人： Gerald Yin , Arnold Kolandenko , Hong Ching Shan , Peter Loewenhardt , Chii Lee , Yan Ye , Xueyan Qian , Songlin Xu , Arthur Chen , Arthur Sato , Michael Grimbergen , Diana Ma , John Yamartino , Chun Yan , Wade Zawalski
IPC分类号： C23E1648
CPC分类号： H01J37/32871
摘要： The present invention provides an apparatus and method, for plasma assisted processing of a workpiece, which provides for separate control of species density within a processing plasma. The present invention has a processing chamber and at least one collateral chamber. The collateral chamber is capable of generating a collateral plasma and delivering it to the processing chamber. To control the densities of the particle species within the processing chamber the present invention may have: a filter interposed between the collateral chamber and the processing chamber, primary chamber source power, several collateral chambers providing separate inputs to the processing chamber, or combinations thereof. Collateral plasma may be: filtered, combined with primary chamber generated plasma, combined with another collateral plasma, or combinations thereof to separately control the densities of the species comprising the processing plasma.
摘要翻译：本发明提供了一种用于工件的等离子体辅助处理的装置和方法，其提供对处理等离子体内的物质密度的单独控制。本发明具有处理室和至少一个辅助室。辅助室能够产生旁路血浆并将其输送到处理室。为了控制处理室内的颗粒物质的密度，本发明可以具有：插入在侧室和处理室之间的过滤器，主室源功率，向处理室提供单独输入的若干附属室，或其组合。附带等离子体可以是：过滤，与初级室产生的等离子体组合，与另一副侧血浆或其组合组合以分别控制包含处理血浆的物质的密度。

3. 发明授权

US06296780B1 System and method for etching organic anti-reflective coating from a substrate 失效
标题翻译：用于从衬底蚀刻有机抗反射涂层的系统和方法
公开(公告)号：US06296780B1
公开(公告)日：2001-10-02
申请号：US08986427
申请日：1997-12-08
申请人： Chun Yan , Yan Ye , Diana Ma
发明人： Chun Yan , Yan Ye , Diana Ma
IPC分类号： H01L213213
CPC分类号： H01L21/31116
摘要： The present invention is embodied in a method and apparatus for etching an organic anti-reflective coating (OARC) layer and a titanium nitride anti-reflective coating (TiN ARC) layer deposited on a substrate located within a processing chamber, without the need for removing the substrate being processed from the processing chamber in which it is situated and without the need for intervening processing steps, such as chamber cleaning operations. The substrate has a base, an underlying oxide layer above the base, an overlying layer above the underlying layer, a middle conductive layer, a TiN ARC layer, and a top OARC layer spun on top of the TiN ARC.
摘要翻译：本发明体现在一种用于蚀刻有机抗反射涂层（OARC）层和沉积在位于处理室内的衬底上的氮化钛抗反射涂层（TiN ARC）层的方法和装置中，而不需要去除基板从其所处理的处理室进行处理，而不需要中间处理步骤，例如室清洁操作。衬底具有基底，在基底上方的下面的氧化物层，在下层上方的上覆层，中间导电层，TiN ARC层和在TiN ARC顶部旋转的顶部OARC层。

4. 发明授权

US6071372A RF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls 失效
标题翻译： RF等离子体蚀刻反应器，具有内部感应线圈天线和导电室壁
公开(公告)号：US6071372A
公开(公告)日：2000-06-06
申请号：US869798
申请日：1997-06-05
申请人： Yan Ye , Donald Olgado , Avi Tepman , Diana Ma , Gerald Yin , Peter Loewenhardt , Jeng H. Hwang , Steve Mak
发明人： Yan Ye , Donald Olgado , Avi Tepman , Diana Ma , Gerald Yin , Peter Loewenhardt , Jeng H. Hwang , Steve Mak
IPC分类号： H05H1/46 , H01J37/32 , H01L21/302 , C23F1/02 , C23C16/00
CPC分类号： H01J37/32477 , H01J37/321
摘要： An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the chamber. The etch reactor also has an inductive coil antenna disposed within the etch chamber which is used to generate the plasma by inductive coupling. Like the chamber walls, the inductive coil antenna is constructed to prevent sputtering of the material making up the antenna by the plasma. The coil antenna can take on any configuration (e.g. location, shape, orientation) that is necessary to achieve a desired power deposition pattern within the chamber. Examples of potential coil antenna configurations for achieving the desired power deposition pattern include constructing the coil antenna with a unitary or a segmented structure. The segmented structure involves the use of at least two coil segments wherein each segment is electrically isolated from the other segments and connected to a separate RF power signal. The unitary coil antenna or each of the coil segments can have a planar shape, a cylindrical shape, a truncated conical shape, a dome shape, or any combination thereof. The conductive walls are electrically grounded to serve as an electrical ground (i.e. anode) for a workpiece-supporting pedestal which is connected to a source of RF power to create a bias voltage at the surface of the workpiece.
摘要翻译： RF等离子体蚀刻反应器具有具有导电壁的蚀刻室和形成面向腔室内部的部分壁的保护层。保护层防止在室内形成的等离子体从室壁溅射材料。蚀刻反应器还具有设置在蚀刻室内的感应线圈天线，其用于通过感应耦合产生等离子体。类似于室壁，感应线圈天线被构造成防止由等离子体溅射构成天线的材料。线圈天线可以承受在室内实现期望的功率沉积图案所必需的任何配置（例如位置，形状，取向）。用于实现期望的功率沉积模式的电位线圈天线配置的示例包括以整体或分段结构构造线圈天线。分段结构涉及使用至少两个线圈段，其中每个段与其它段电隔离并连接到单独的RF功率信号。单线圈天线或每个线圈段可以具有平面形状，圆柱形，截顶圆锥形，圆顶形或其任何组合。导电壁电接地以用作工件支撑基座的电接地（即阳极），工件支撑基座连接到RF功率源，以在工件的表面产生偏置电压。

5. 发明授权

US06270687B1 RF plasma method 失效
标题翻译：射频等离子体法
公开(公告)号：US06270687B1
公开(公告)日：2001-08-07
申请号：US09564042
申请日：2000-04-27
申请人： Yan Ye , Donald Olgado , Avi Tepman , Diana Ma , Gerald Zheyao Yin , Peter Loewenhardt , Jeng Hwang , Steve S. Y. Mak
发明人： Yan Ye , Donald Olgado , Avi Tepman , Diana Ma , Gerald Zheyao Yin , Peter Loewenhardt , Jeng Hwang , Steve S. Y. Mak
IPC分类号： B44C122
CPC分类号： H01J37/32477 , H01J37/321
摘要： An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the chamber. The etch reactor also has an inductive coil antenna disposed within the etch chamber which is used to generate the plasma by inductive coupling. Like the chamber walls, the inductive coil antenna is constructed to prevent sputtering of the material making up the antenna by the plasma. The coil antenna can take on any configuration (e.g. location, shape, orientation) that is necessary to achieve a desired power deposition pattern within the chamber. Examples of potential coil antenna configurations for achieving the desired power deposition pattern include constructing the coil antenna with a unitary or a segmented structure. The segmented structure involves the use of at least two coil segments wherein each segment is electrically isolated from the other segments and connected to a separate RF power signal. The unitary coil antenna or each of the coil segments can have a planar shape, a cylindrical shape, a truncated conical shape, a dome shape, or any combination thereof. The conductive walls are electrically grounded to serve as an electrical ground (i.e. anode) for a workpiece-supporting pedestal which is connected to a source of RF power to create a bias voltage at the surface of the workpiece.
摘要翻译： RF等离子体蚀刻反应器具有具有导电壁的蚀刻室和形成面向腔室内部的部分壁的保护层。保护层防止在室内形成的等离子体从室壁溅射材料。蚀刻反应器还具有设置在蚀刻室内的感应线圈天线，其用于通过感应耦合产生等离子体。类似于室壁，感应线圈天线被构造成防止由等离子体溅射构成天线的材料。线圈天线可以承受在室内实现期望的功率沉积图案所必需的任何配置（例如位置，形状，取向）。用于实现期望的功率沉积模式的电位线圈天线配置的示例包括以整体或分段结构构造线圈天线。分段结构涉及使用至少两个线圈段，其中每个段与其它段电隔离并连接到单独的RF功率信号。单线圈天线或每个线圈段可以具有平面形状，圆柱形，截顶圆锥形，圆顶形或其任何组合。导电壁电接地以用作工件支撑基座的电接地（即阳极），工件支撑基座连接到RF功率源，以在工件的表面产生偏置电压。

6. 发明申请

US20050106873A1 Plasma chamber having multiple RF source frequencies 审中-公开
标题翻译：等离子室具有多个RF源频率
公开(公告)号：US20050106873A1
公开(公告)日：2005-05-19
申请号：US10890034
申请日：2004-07-12
申请人： Daniel Hoffman , Diana Ma , Yan Ye , Jang Yang
发明人： Daniel Hoffman , Diana Ma , Yan Ye , Jang Yang
IPC分类号： H01L21/205 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/461 , H05H1/00
CPC分类号： H01J37/32165 , H01J37/32091
摘要： A method and apparatus for processing a semiconductor substrate is disclosed. A plasma reactor has a capacitive electrode driven by a plurality of RF power sources, and the electrode capacitance is matched at the desired plasma density and RF source frequency to the negative capacitance of the plasma, to provide an electrode plasma resonance supportive of a broad process window within which the plasma may be sustained.
摘要翻译：公开了一种用于处理半导体衬底的方法和设备。等离子体反应器具有由多个RF电源驱动的电容电极，并且电极电容以期望的等离子体密度和RF源频率匹配到等离子体的负电容，以提供支持广泛过程的电极等离子体共振可以维持等离子体的窗口。

7. 发明申请

US20070287244A1 ALTERNATIVE INTEGRATION SCHEME FOR CMOS S/D SiGe PROCESS 审中-公开
标题翻译： CMOS S / D SiGe工艺的替代整合方案
公开(公告)号：US20070287244A1
公开(公告)日：2007-12-13
申请号：US11739099
申请日：2007-04-24
申请人： Meihua Shen , Yonah Cho , Mark Kawaguchi , Faran Nouri , Diana Ma
发明人： Meihua Shen , Yonah Cho , Mark Kawaguchi , Faran Nouri , Diana Ma
IPC分类号： H01L21/8236
CPC分类号： H01L21/823814 , H01L21/823864
摘要： A method for fabricating a semiconductor device with adjacent PMOS and NMOS devices on a substrate includes forming a PMOS gate electrode with a PMOS hardmask on a semiconductor substrate with a PMOS gate dielectric layer in between, forming an NMOS gate electrode with an NMOS hardmask on a semiconductor substrate with an NMOS gate dielectric layer in between, forming an oxide liner over a portion of the PMOS gate electrode and over a portion of the NMOS gate electrode, forming a lightly doped N-Halo implant, depositing a nitride layer over the oxide liner, depositing photoresist on the semiconductor substrate in a pattern that covers the NMOS device, etching the nitride layer from the PMOS device, wherein the etching nitride layer leaves a portion of the nitride layer on the oxide liner, etching semiconductor substrate to form a Si recess, and depositing SiGe into the Si recesses, wherein the SiGe and the nitride layer enclose the oxide liner. The method can also include implanting in the semiconductor substrate a source and drain region for the PMOS.
摘要翻译：一种用于在衬底上制造具有相邻PMOS和NMOS器件的半导体器件的方法包括在半导体衬底上形成具有PMOS硬掩模的PMOS栅电极，其间具有PMOS栅极介电层，在NMOS栅极上形成NMOS栅极半导体衬底，其间具有NMOS栅极介电层，在PMOS栅电极的一部分上方和NMOS栅电极的一部分之上形成氧化物衬垫，形成轻掺杂的N-Halo注入，在氧化物衬垫上沉积氮化物层以覆盖所述NMOS器件的图案沉积在所述半导体衬底上的光致抗蚀剂，从所述PMOS器件蚀刻所述氮化物层，其中所述蚀刻氮化物层离开所述氧化物衬底上的所述氮化物层的一部分，蚀刻半导体衬底以形成Si凹槽并且将SiGe沉积到Si凹部中，其中SiGe和氮化物层包围氧化物衬垫。该方法还可以包括在半导体衬底中注入用于PMOS的源极和漏极区域。

8. 发明申请

US20070284668A1 CMOS S/D SiGe DEVICE MADE WITH ALTERNATIVE INTEGRATION PROCESS 审中-公开
标题翻译： CMOS S / D SiGe器件与替代整合过程
公开(公告)号：US20070284668A1
公开(公告)日：2007-12-13
申请号：US11739103
申请日：2007-04-24
申请人： Meihua Shen , Yonah Cho , Mark Kawaguchi , Faran Nouri , Diana Ma
发明人： Meihua Shen , Yonah Cho , Mark Kawaguchi , Faran Nouri , Diana Ma
IPC分类号： H01L21/8238
CPC分类号： H01L21/823814 , H01L21/28044 , H01L21/823807 , H01L29/165 , H01L29/518 , H01L29/6656 , H01L29/66628 , H01L29/66636 , H01L29/7848
摘要： A semiconductor device includes a substrate having regions filled with an additive that forms a source/drain for a MOS device, a gate dielectric layer deposited over the substrate, the gate dielectric layer electrically isolates the substrate from subsequently deposited layers, a gate electrode deposited over the gate dielectric layer, an oxide liner formed along laterally opposite sidewalls of the gate electrode, a nitride layer formed along the oxide liner extending above the gate electrode, and wherein the additive and the nitride layer enclose the gate electrode.
摘要翻译：半导体器件包括具有填充有添加剂的区域的衬底，其形成用于MOS器件的源极/漏极，沉积在衬底上的栅极电介质层，栅极介电层将衬底与随后沉积的层电隔离，栅极电极沉积在栅极电介质层，沿着栅电极的横向相对的侧壁形成的氧化物衬垫，沿着在栅电极上方延伸的氧化物衬垫形成的氮化物层，并且其中添加剂和氮化物层包围栅电极。

9. 发明授权

US06413389B1 Method for recovering metal from etch by-products 失效
标题翻译：从蚀刻副产物中回收金属的方法
公开(公告)号：US06413389B1
公开(公告)日：2002-07-02
申请号：US09467295
申请日：1999-12-17
申请人： Hong Shih , Danny Lu , Nianci Han , Li Xu , Diana Ma
发明人： Hong Shih , Danny Lu , Nianci Han , Li Xu , Diana Ma
IPC分类号： C02F1461
CPC分类号： C22B11/042 , Y02P10/214
摘要： A method and assembly for recovering a metal from by-products produced from etching a metal (e.g., platinum, iridium, aluminum, etc.) in a plasma processing chamber. The method includes recovering from the plasma processing chamber a deposit of the by-products containing the metal. The deposit is dissolved in an acid, and the metal is recovered from the acid by inserting a working electrode, a reference electrode, and a counter electrode into the acid and applying a difference in potential between the working and reference electrodes to cause current to flow through the working and counter electrodes and the metal to be removed from the liquid and deposit on the working electrode. The metal is removed from the working electrode to recover the metal. The assembly for recovering the metal from the by-products includes a potentiostat for effecting a difference in potential between the working and reference electrodes and causing current to flow through the working and counter electrodes in response to the difference in potential between the working and reference electrodes.
摘要翻译：一种用于从在等离子体处理室中蚀刻金属（例如，铂，铱，铝等）产生的副产物中回收金属的方法和组件。该方法包括从等离子体处理室回收含有金属的副产物的沉积物。将沉积物溶解在酸中，通过将工作电极，参比电极和对电极插入酸中并在工作电极和参考电极之间施加电位差以使电流流动从酸中回收金属通过工作电极和对电极以及从液体中除去的金属沉积在工作电极上。从工作电极上除去金属以回收金属。用于从副产物中回收金属的组件包括用于实现工作电极和参考电极之间的电位差的恒电位仪，并且响应于工作电极和参考电极之间的电位差而导致电流流过工作电极和对电极。

10. 发明授权

US06592707B2 Corrosion-resistant protective coating for an apparatus and method for processing a substrate 失效
公开(公告)号：US06592707B2
公开(公告)日：2003-07-15
申请号：US10033115
申请日：2001-10-22
申请人： Hong Shih , Nianci Han , Jie Yuan , Joe Sommers , Diana Ma , Paul Vollmer , Michael C. Willson
发明人： Hong Shih , Nianci Han , Jie Yuan , Joe Sommers , Diana Ma , Paul Vollmer , Michael C. Willson
IPC分类号： H05H100
CPC分类号： C09D4/00 , C23C16/4404 , H01J37/32477 , C08F222/1006
摘要： A corrosion-resistant protective coating for an apparatus and method of processing a substrate in a chamber containing a plasma of a processing gas. The protective coating or sealant is used to line or coat inside surfaces of a reactor chamber that are exposed to corrosive processing gas that forms the plasma. The protective coating comprises at least one polymer resulting from a monomeric anaerobic chemical mixture having been cured in a vacuum in the absence of oxygen. The protective coating includes a major proportion of at least one methacrylate compound and a minor proportion of an activator compound which initiates the curing process of the monomeric anaerobic mixture in the absence of oxygen or air.

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