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1. 发明授权

US08936696B2 Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor 有权
标题翻译：用于在磁场增强等离子体反应器中成形磁场的方法和装置
公开(公告)号：US08936696B2
公开(公告)日：2015-01-20
申请号：US13011014
申请日：2011-01-21
申请人： Roger Alan Lindley , Jingbao Liu , Bryan Y. Pu , Keiji Horioka
发明人： Roger Alan Lindley , Jingbao Liu , Bryan Y. Pu , Keiji Horioka
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00 , H01J37/32
CPC分类号： H01J37/32623 , H01J37/3266 , H01J37/32688
摘要： A magnetic field generator which provides greater control over the magnetic field is provided. The magnetic field generator has a plurality of overlapping main magnetic coil sections for forming a magnetic field generally parallel to the top surface of the supporting member. In other embodiments, sub-magnetic coil sections are placed symmetrically around the main magnetic coil sections.
摘要翻译：提供了提供对磁场的更大控制的磁场发生器。磁场发生器具有多个重叠的主磁线圈段，用于形成大致平行于支撑构件的顶表面的磁场。在其他实施例中，副磁性线圈部分围绕主电磁线圈部分对称放置。

2. 发明申请

US20110115589A1 METHOD AND APPARATUS FOR SHAPING A MAGNETIC FIELD IN A MAGNETIC FIELD-ENHANCED PLASMA REACTOR 有权
标题翻译：在磁场增强等离子体反应器中形成磁场的方法和装置
公开(公告)号：US20110115589A1
公开(公告)日：2011-05-19
申请号：US13011014
申请日：2011-01-21
申请人： ROGER ALAN LINDLEY , JINGBAO LIU , BRYAN Y. PU , KEIJI HORIOKA
发明人： ROGER ALAN LINDLEY , JINGBAO LIU , BRYAN Y. PU , KEIJI HORIOKA
IPC分类号： H01F5/00
CPC分类号： H01J37/32623 , H01J37/3266 , H01J37/32688
摘要： A magnetic field generator which provides greater control over the magnetic field is provided. The magnetic field generator has a plurality of overlapping main magnetic coil sections for forming a magnetic field generally parallel to the top surface of the supporting member. In other embodiments, sub-magnetic coil sections are placed symmetrically around the main magnetic coil sections.
摘要翻译：提供了提供对磁场的更大控制的磁场发生器。磁场发生器具有多个重叠的主磁线圈段，用于形成大致平行于支撑构件的顶表面的磁场。在其他实施例中，副磁性线圈部分围绕主电磁线圈部分对称放置。

3. 发明授权

US07838430B2 Plasma control using dual cathode frequency mixing 有权
标题翻译：等离子体控制采用双阴极混频
公开(公告)号：US07838430B2
公开(公告)日：2010-11-23
申请号：US10823364
申请日：2004-04-12
申请人： Steven C. Shannon , Dennis S. Grimard , Theodoros Panagopoulos , Daniel J. Hoffman , Michael G. Chafin , Troy S. Detrick , Alexander Paterson , Jingbao Liu , Taeho Shin , Bryan Y. Pu
发明人： Steven C. Shannon , Dennis S. Grimard , Theodoros Panagopoulos , Daniel J. Hoffman , Michael G. Chafin , Troy S. Detrick , Alexander Paterson , Jingbao Liu , Taeho Shin , Bryan Y. Pu
IPC分类号： H01L21/302
CPC分类号： H01J37/32082 , H01J37/32165
摘要： A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, and supplying a second RF signal to the first electrode, wherein an interaction between the first and second RF signals is used to control at least one characteristic of a plasma formed in the processing chamber.
摘要翻译：提供一种使用双频RF源控制半导体衬底处理室中的等离子体特性的方法和装置。该方法包括向设置在处理室中的第一电极提供第一RF信号，并向第一电极提供第二RF信号，其中第一和第二RF信号之间的相互作用用于控制等离子体的至少一个特性形成在处理室中。

4. 发明申请

US20070247075A1 Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zone 有权
标题翻译：等离子体蚀刻反应器，其分布在晶片表面上的蚀刻气体和独立进料的中心气体区域中的聚合物氧化气体
公开(公告)号：US20070247075A1
公开(公告)日：2007-10-25
申请号：US11490936
申请日：2006-07-21
申请人： Jong Mun Kim , Jingbao Liu , Bryan Y. Pu
发明人： Jong Mun Kim , Jingbao Liu , Bryan Y. Pu
IPC分类号： C23F1/00
CPC分类号： H01J37/321 , H01J37/3244
摘要： A plasma etch reactor for plasma enhanced etching of a workpiece such as a semiconductor wafer includes a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes a first process gas inlet coupled to receive predominantly or pure oxygen gas and a second process gas inlet coupled to receive a polymerizing etch process gas. The reactor has a ceiling plasma source power electrode including a center circular gas disperser configured to receive a process gas from the first process gas inlet and to distribute the process gas into the chamber over the workpiece, and an inner annular gas disperser centered around the center gas disperser configured to receive the process gas from the second process gas inlet and to distribute the process gas into the chamber over the workpiece through an inner plurality of injection ports.
摘要翻译：用于等离子体等离子体蚀刻反应器对诸如半导体晶片的工件进行增强蚀刻，包括限定处理室的壳体，被配置为在处理期间支撑室内的工件并包括等离子体偏置功率电极的工件支撑件。反应器还包括耦合以接收主要或纯氧气的第一工艺气体入口和耦合以接收聚合蚀刻工艺气体的第二工艺气体入口。反应器具有天花板等离子体源功率电极，其包括中心圆形气体分散器，该中心圆形气体分散器构造成从第一工艺气体入口接收工艺气体并将工艺气体分配到工件上方的室中，并且以中心为中心的内部环形气体分散器气体分散器被配置为从第二处理气体入口接收处理气体，并且通过内部多个注入口将工艺气体分配到工件上方的腔室中。

5. 发明授权

US06716302B2 Dielectric etch chamber with expanded process window 有权
标题翻译：介质蚀刻室具有扩展的工艺窗口
公开(公告)号：US06716302B2
公开(公告)日：2004-04-06
申请号：US10253496
申请日：2002-09-24
申请人： James D Carducci , Hamid Noorbakhsh , Evans Y Lee , Bryan Y Pu , Hongching Shan , Claes Bjorkman , Siamak Salimian , Paul E Luscher , Michael D Welch
发明人： James D Carducci , Hamid Noorbakhsh , Evans Y Lee , Bryan Y Pu , Hongching Shan , Claes Bjorkman , Siamak Salimian , Paul E Luscher , Michael D Welch
IPC分类号： H05H100
CPC分类号： H01L21/6875 , H01J37/32522 , H01L21/31116 , H01L21/67069 , H01L21/6833 , H01L21/68757 , H01L21/68785 , H01L21/68792 , H01L21/76802 , H01L21/76807 , H01L21/76897 , H01L2924/3011
摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.
摘要翻译：一种用于在低于大气压的衬底的等离子体蚀刻处理的电容耦合反应器包括限定处理容积的室主体，设置在室主体上的盖，盖是第一电极，设置在处理容积中的衬底支撑件，并且包括第二电极耦合到所述第一和第二电极中的至少一个电极的射频源，配置成将处理气体输送到所述处理容积中的处理气体入口，以及具有至少1600升/分钟的抽运能力的抽空泵系统。较大的泵送能力控制工艺气体的停留时间，以便调节分解成更具反应活性的物质的程度。

6. 发明授权

US06513452B2 Adjusting DC bias voltage in plasma chamber 失效
标题翻译：调整等离子体室内的直流偏置电压
公开(公告)号：US06513452B2
公开(公告)日：2003-02-04
申请号：US09841804
申请日：2001-04-24
申请人： Hongching Shan , Evans Y. Lee , Michael D. Welch , Robert W. Wu , Bryan Y. Pu , Paul E. Luscher , James D. Carducci , Richard Blume
发明人： Hongching Shan , Evans Y. Lee , Michael D. Welch , Robert W. Wu , Bryan Y. Pu , Paul E. Luscher , James D. Carducci , Richard Blume
IPC分类号： C23C1600
CPC分类号： H01J37/32834 , H01J37/32477 , H01J37/32623 , H01J37/32706
摘要： A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage. By blocking the plasma from reaching the exhaust pump, the exhaust baffle reduces the deposition of unwanted particles on exhaust pump components. The exhaust baffle also reduces the cathode DC bias by reducing the effective surface area of the electrically grounded chamber wall which couples RF power to the plasma.
摘要翻译：一种调整用于制造半导体器件的等离子体室中的阴极直流偏压的方法。电介质屏蔽件位于等离子体和室的电接地部件的选定部分之间，例如电接地室壁。通过控制一个或多个以下参数来调节阴极直流偏压：（1）腔室壁的表面积或由介电屏蔽件阻挡的其它接地部件; （2）电介质的厚度; （3）屏蔽和室壁之间的间隙; 和（4）介电材料的介电常数。在装置方面，本发明是用于制造半导体器件的等离子体室，其具有带有多个弯曲通道的排气挡板。每个通道足够长和弯曲，使得室内的等离子体的任何部分不能延伸超过通道的出口。通过阻止等离子体到达排气泵，排气挡板减少排气泵部件上不想要的颗粒的沉积。排气挡板还通过减少将RF功率耦合到等离子体的电接地室壁的有效表面积来减小阴极DC偏压。

7. 发明授权

US06403491B1 Etch method using a dielectric etch chamber with expanded process window 失效
标题翻译：使用具有扩展工艺窗口的电介质蚀刻室的蚀刻方法
公开(公告)号：US06403491B1
公开(公告)日：2002-06-11
申请号：US09704867
申请日：2000-11-01
申请人： Jingbao Liu , Judy Wang , Takehiko Komatsu , Bryan Y Pu , Kenny L Doan , Claes Bjorkman , Melody Chang , Yunsang Kim , Hongching Shan , Ruiping Wang
发明人： Jingbao Liu , Judy Wang , Takehiko Komatsu , Bryan Y Pu , Kenny L Doan , Claes Bjorkman , Melody Chang , Yunsang Kim , Hongching Shan , Ruiping Wang
IPC分类号： H01L213065
CPC分类号： H01L21/6875 , H01J37/32522 , H01L21/31116 , H01L21/67069 , H01L21/6833 , H01L21/68757 , H01L21/68785 , H01L21/68792 , H01L21/76802 , H01L21/76807 , H01L21/76897 , H01L2924/3011
摘要： A method for etching a dielectric in a thermally controlled plasma etch chamber with an expanded processing window. The method is adapted to incorporate benefits of a the thermal control and high evacuation capability of the chamber. Etchent gases include hydrocarbons, oxygen and inert gas. Explanation is provided for enablling the use of hexafluoro-1,3-butadiene in a capacitively coupled etch plasma. The method is very useful for creating via, self aligned contacts, dual damascene, and other dielectric etch.
摘要翻译：一种用于在具有扩展的处理窗口的热控等离子体蚀刻室中蚀刻电介质的方法。该方法适于结合腔室的热控制和高排气能力的优点。 Etchent气体包括碳氢化合物，氧气和惰性气体。提供了解释在电容耦合蚀刻等离子体中使用六氟-1,3-丁二烯的方法。该方法对于创建通孔，自对准触点，双镶嵌和其他电介质蚀刻非常有用。

8. 发明授权

US06284093B1 Shield or ring surrounding semiconductor workpiece in plasma chamber 有权
标题翻译：在等离子体室内围绕半导体工件的屏蔽或环
公开(公告)号：US06284093B1
公开(公告)日：2001-09-04
申请号：US09665484
申请日：2000-09-20
申请人： Kuang-Han Ke , Bryan Y. Pu , Hongching Shan , James Wang , Henry Fong , Zongyu Li , Michael D. Welch
发明人： Kuang-Han Ke , Bryan Y. Pu , Hongching Shan , James Wang , Henry Fong , Zongyu Li , Michael D. Welch
IPC分类号： H01J100
CPC分类号： H01L21/67126 , H01J37/32623 , H01J37/32633 , H01J37/3266 , H01L21/6831 , H01L21/6833 , H01L21/68721 , H01L21/68735 , H02N13/00 , Y10S156/915
摘要： A ring or collar surrounding a semiconductor workpiece in a plasma chamber. According to one aspect, the ring has an elevated collar portion having an inner surface oriented at an obtuse angle to the plane of the workpiece, this angle preferably being 135°. This angular orientation causes ions bombarding the inner surface of the elevated collar to scatter in a direction more parallel to the plane of the workpiece, thereby reducing erosion of any dielectric shield at the perimeter of the workpiece, and ameliorating spatial non-uniformity in the plasma process due to any excess ion density near such perimeter. In a second aspect, the workpiece is surrounded by a dielectric shield, and the shield is covered by a non-dielectric ring which protects the dielectric shield from reaction with, or erosion by, the process gases. In a third aspect, the dielectric shield is thin enough to couple substantial power from the cathode to the plasma, thereby improving spatial uniformity of the plasma process near the perimeter of the workpiece. In a fourth aspect, azimuthal non-uniformities in process performance can be ameliorated by corresponding azimuthal variations in the dimensions of the elevated collar and/or the dielectric shield surrounding the workpiece.
摘要翻译：围绕等离子体室中的半导体工件的环或环。根据一个方面，所述环具有提升的套环部分，其内表面以与工件的平面成钝角定向，该角度优选为135°。这种角度取向导致离子轰击提升的轴环的内表面沿更平行于工件的平面的方向散射，从而减少工件周边处的任何介电屏蔽的侵蚀，并且改善等离子体中的空间不均匀性由于这种周边附近的任何过量的离子密度而产生的过程。在第二方面，工件被电介质屏蔽围绕，屏蔽被非介电环覆盖，该绝缘环保护介电屏蔽免受过程气体的反应或腐蚀。在第三方面中，电介质屏蔽体足够薄以将来自阴极的实质功率耦合到等离子体，从而改善靠近工件周边的等离子体工艺的空间均匀性。在第四方面，方法性能的方位不均匀性可以通过围绕工件的高架轴环和/或介电屏蔽的尺寸的相应的方位角变化来改善。

9. 发明授权

US08187415B2 Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zone 有权
标题翻译：等离子体蚀刻反应器，其分布在晶片表面上的蚀刻气体和独立进料的中心气体区域中的聚合物氧化气体
公开(公告)号：US08187415B2
公开(公告)日：2012-05-29
申请号：US11490936
申请日：2006-07-21
申请人： Jong Mun Kim , Jingbao Liu , Bryan Y. Pu
发明人： Jong Mun Kim , Jingbao Liu , Bryan Y. Pu
IPC分类号： H01L21/205 , H01L21/28
CPC分类号： H01J37/321 , H01J37/3244
摘要： A plasma etch reactor for plasma enhanced etching of a workpiece such as a semiconductor wafer includes a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes a first process gas inlet coupled to receive predominantly or pure oxygen gas and a second process gas inlet coupled to receive a polymerizing etch process gas. The reactor has a ceiling plasma source power electrode including a center circular gas disperser configured to receive a process gas from the first process gas inlet and to distribute the process gas into the chamber over the workpiece, and an inner annular gas disperser centered around the center gas disperser configured to receive the process gas from the second process gas inlet and to distribute the process gas into the chamber over the workpiece through an inner plurality of injection ports.
摘要翻译：用于等离子体等离子体蚀刻反应器对诸如半导体晶片的工件进行增强蚀刻，包括限定处理室的壳体，被配置为在处理期间支撑室内的工件并包括等离子体偏置功率电极的工件支撑件。反应器还包括耦合以接收主要或纯氧气的第一工艺气体入口和耦合以接收聚合蚀刻工艺气体的第二工艺气体入口。反应器具有天花板等离子体源功率电极，其包括中心圆形气体分散器，该中心圆形气体分散器构造成从第一工艺气体入口接收工艺气体并将工艺气体分配到工件上方的室中，并且以中心为中心的内部环形气体分散器气体分散器被配置为从第二处理气体入口接收处理气体，并且通过内部多个注入口将工艺气体分配到工件上方的腔室中。

10. 发明授权

US07374636B2 Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor 失效
标题翻译：在磁场增强等离子体反应器中提供均匀等离子体的方法和装置
公开(公告)号：US07374636B2
公开(公告)日：2008-05-20
申请号：US10205870
申请日：2002-07-26
申请人： Keiji Horioka , Chun Yan , Taeho Shin , Roger Alan Lindley , Panyin Hughes , Douglas H. Burns , Evans Y. Lee , Bryan Y. Pu , Qi Li , Mahmoud Dahimene
发明人： Keiji Horioka , Chun Yan , Taeho Shin , Roger Alan Lindley , Panyin Hughes , Douglas H. Burns , Evans Y. Lee , Bryan Y. Pu , Qi Li , Mahmoud Dahimene
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/32623 , H01J37/3266
摘要： A method and apparatus for controlling a magnetic field gradient within a magnetically enhanced plasma reactor. The apparatus comprises a cathode pedestal supporting a wafer within an enclosure, a plurality of electromagnets positioned proximate the enclosure for producing a magnetic field in the enclosure and a magnetic field control element, positioned proximate the electromagnets, for controlling the magnetic field proximate a specific region of the wafer.
摘要翻译：一种用于控制磁增强等离子体反应器内的磁场梯度的方法和装置。该装置包括支撑外壳内的晶片的阴极基座，靠近外壳定位的多个电磁体，用于在外壳中产生磁场，并且磁场控制元件位于电磁体附近，用于控制靠近特定区域的磁场的晶片。

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