专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06331380B1 Method of pattern etching a low K dielectric layer 失效
标题翻译：图案蚀刻低K电介质层的方法
公开(公告)号：US06331380B1
公开(公告)日：2001-12-18
申请号：US09549262
申请日：2000-04-14
申请人： Yan Ye , Pavel Ionov , Allen Zhao , Peter Chang-Lin Hsieh , Diana Xiaobing Ma , Chun Yan , Jie Yuan
发明人： Yan Ye , Pavel Ionov , Allen Zhao , Peter Chang-Lin Hsieh , Diana Xiaobing Ma , Chun Yan , Jie Yuan
IPC分类号： G03C558
CPC分类号： H01L21/31138 , H01L21/02115 , H01L21/02118 , H01L21/0212 , H01L21/02274 , H01L21/0274 , H01L21/31116 , H01L21/31144 , H01L21/3127 , H01L21/3146 , H01L21/31612 , H01L21/32136 , H01L21/32139
摘要： A first embodiment of the present invention pertains to a method of patterning a semiconductor device conductive feature while permitting easy removal of any residual masking layer which remains after completion of the etching process. A multi-layered masking structure is used which includes a layer of high-temperature organic-based masking material overlaid by either a patterned layer of inorganic masking material or by a layer of patterned high-temperature imageable organic masking material. The inorganic masking material is used to transfer a pattern to the high-temperature organic-based masking material and is then removed. The high-temperature organic-based masking material is used to transfer the pattern and then may be removed if desired. This method is also useful in the pattern etching of aluminum, even though aluminum can be etched at lower temperatures. A second embodiment of the present invention pertains to a specialized etch chemistry useful in the patterning of organic polymeric layers such as low k dielectrics, or other organic polymeric interfacial layers. This etch chemistry is useful for mask opening during the etch of a conductive layer or is useful in etching damascene structures where a metal fill layer is applied over the surface of a patterned organic-based dielectric layer. The etch chemistry provides for the use of etchant plasma species which minimize oxygen, fluorine, chlorine, and bromine content.
摘要翻译：本发明的第一实施例涉及一种图案化半导体器件导电特征的方法，同时允许容易地去除在蚀刻工艺完成之后保留的任何残留掩模层。使用多层掩模结构，其包括由无机掩模材料的图案化层或由图案化的高温可成像有机掩蔽材料层覆盖的高温有机基掩蔽材料层。无机掩模材料用于将图案转印到高温有机基掩蔽材料上，然后除去。高温有机基掩蔽材料用于转移图案，然后如果需要可以去除。这种方法在铝的图案蚀刻中也是有用的，即使在较低温度下可以蚀刻铝。本发明的第二个实施方案涉及可用于图案化有机聚合物层如低k电介质或其它有机聚合物界面层的专用蚀刻化学物质。该蚀刻化学物质可用于在导电层的蚀刻过程中的掩模开口，或者可用于蚀刻镶嵌结构，其中金属填充层施加在图案化有机基介质层的表面上。蚀刻化学提供了使氧化物，氟，氯和溴含量最小化的蚀刻剂等离子体物质的使用。

2. 发明授权

US6080529A Method of etching patterned layers useful as masking during subsequent etching or for damascene structures 失效
标题翻译：在随后的蚀刻或镶嵌结构期间蚀刻用作掩模的图案化层的方法
公开(公告)号：US6080529A
公开(公告)日：2000-06-27
申请号：US174763
申请日：1998-10-19
申请人： Yan Ye , Pavel Ionov , Allen Zhao , Peter Chang-Lin Hsieh , Diana Xiaobing Ma , Chun Yan , Jie Yuan
发明人： Yan Ye , Pavel Ionov , Allen Zhao , Peter Chang-Lin Hsieh , Diana Xiaobing Ma , Chun Yan , Jie Yuan
IPC分类号： H01L21/302 , H01L21/027 , H01L21/311 , H01L21/312 , H01L21/314 , H01L21/316 , H01L21/3213 , G03C5/58
CPC分类号： H01L21/0274 , H01L21/31138 , H01L21/31144 , H01L21/32139 , H01L21/31116 , H01L21/3127 , H01L21/3146 , H01L21/31612 , H01L21/32136
摘要： A first embodiment of the present invention pertains to a method of patterning a semiconductor device conductive feature while permitting easy removal of any residual masking layer which remains after completion of the etching process. A multi-layered masking structure is used which includes a layer of high-temperature organic-based masking material overlaid by either a patterned layer of inorganic masking material or by a layer of patterned high-temperature imageable organic masking material. The inorganic masking material is used to transfer a pattern to the high-temperature organic-based masking material and is then removed. The high-temperature organic-based masking material is used to transfer the pattern and then may be removed if desired. This method is also useful in the pattern etching of aluminum, even though aluminum can be etched at lower temperatures. A second embodiment of the present invention pertains to a specialized etch chemistry useful in the patterning of organic polymeric layers such as low k dielectrics, or other organic polymeric interfacial layers. This etch chemistry is useful for mask opening during the etch of a conductive layer or is useful in etching damascene structures where a metal fill layer is applied over the surface of a patterned organic-based dielectric layer. The etch chemistry provides for the use of etchant plasma species which minimize oxygen, fluorine, chlorine, and bromine content.
摘要翻译：本发明的第一实施例涉及一种图案化半导体器件导电特征的方法，同时允许容易地去除在蚀刻工艺完成之后保留的任何残留掩模层。使用多层掩模结构，其包括由无机掩模材料的图案化层或由图案化的高温可成像有机掩蔽材料层覆盖的高温有机基掩蔽材料层。无机掩模材料用于将图案转印到高温有机基掩蔽材料上，然后除去。高温有机基掩蔽材料用于转移图案，然后如果需要可以去除。这种方法在铝的图案蚀刻中也是有用的，即使在较低温度下可以蚀刻铝。本发明的第二个实施方案涉及可用于图案化有机聚合物层如低k电介质或其它有机聚合物界面层的专用蚀刻化学物质。该蚀刻化学物质可用于在导电层的蚀刻过程中的掩模开口，或者可用于蚀刻镶嵌结构，其中金属填充层施加在图案化有机基介质层的表面上。蚀刻化学提供了使氧化物，氟，氯和溴含量最小化的蚀刻剂等离子体物质的使用。

3. 发明授权

US06458516B1 Method of etching dielectric layers using a removable hardmask 失效
标题翻译：使用可拆卸硬掩模蚀刻介电层的方法
公开(公告)号：US06458516B1
公开(公告)日：2002-10-01
申请号：US09551255
申请日：2000-04-18
申请人： Yan Ye , Pavel Ionov , Allen Zhao , Peter Hsieh , Diana Ma , Chun Yan , Jie Yuan
发明人： Yan Ye , Pavel Ionov , Allen Zhao , Peter Hsieh , Diana Ma , Chun Yan , Jie Yuan
IPC分类号： G03C556
CPC分类号： H01L21/31138 , H01L21/02115 , H01L21/02118 , H01L21/0212 , H01L21/02274 , H01L21/0274 , H01L21/31116 , H01L21/31144 , H01L21/3127 , H01L21/3146 , H01L21/31612 , H01L21/32136 , H01L21/32139
摘要： A method of patterning a layer of dielectric material having a thickness greater than 1,000 Å, and typically a thickness greater than 5,000 Å. The method is particularly useful for forming a high aspect ratio via or a high aspect ratio contact including self-aligned contact structures, where the aspect ratio is typically greater than 3 and the feature size of the contact is about 0.25 &mgr;m or less. In particular, an organic, polymeric-based masking material is used in a plasma etch process for transferring a desired pattern through an underlying layer of dielectric material. The combination of masking material and plasma source gas must provide the necessary high selectivity toward etching of the underlying layer of dielectric material. The selectivity is preferably greater than 3:1, where the etch rate of the dielectric material is at least 3 times greater than the etch rate of the organic, polymeric-based masking material. The dielectric material may be inorganic, for example, silicon oxide; doped silicon oxide; carbon-containing silicon oxide; SOG; BPSG; and similar materials. The dielectric material may be also be organic, where a high temperature organic-based masking material is used for transferring a desired pattern, and the underlying dielectric material is of a chemical and structural composition which is sufficiently different from the masking material that the required selectivity is provided. In any case, the organic, polymeric-based masking material is easily removed from the substrate etch process after completion of etch without damage to underlying device structures.
摘要翻译：图案化厚度大于1000，通常大于5,000的厚度的电介质材料层的方法。该方法对于形成包括自对准接触结构的高纵横比通孔或高纵横比接触特别有用，其中纵横比通常大于3，接触的特征尺寸为约0.25μm或更小。特别地，在等离子体蚀刻工艺中使用有机的基于聚合物的掩模材料，用于将期望的图案转移通过介电材料的下层。掩模材料和等离子体源气体的组合必须为蚀刻介电材料的下层提供必要的高选择性。选择性优选大于3:1，其中介电材料的蚀刻速率比有机聚合物基掩模材料的蚀刻速率高至少3倍。介电材料可以是无机的，例如氧化硅; 掺杂氧化硅; 含碳氧化硅; SOG; BPSG; 和类似的材料。介电材料也可以是有机的，其中使用高温有机基掩蔽材料来转移所需的图案，并且下面的介电材料具有与掩蔽材料充分不同的化学和结构组成，所需的选择性被提供。在任何情况下，有机的基于聚合物的掩蔽材料在蚀刻完成之后容易地从基底蚀刻工艺中去除而不损坏下面的器件结构

4. 发明授权

US06291356B1 Method for etching silicon oxynitride and dielectric antireflection coatings 失效
标题翻译：蚀刻氮氧化硅和介电抗反射涂层的方法
公开(公告)号：US06291356B1
公开(公告)日：2001-09-18
申请号：US09317655
申请日：1999-05-24
申请人： Pavel Ionov , Sung Ho Kim , Dean Li , Chun Yan , James Chang Wang
发明人： Pavel Ionov , Sung Ho Kim , Dean Li , Chun Yan , James Chang Wang
IPC分类号： H01L21302
CPC分类号： H01L21/32139 , H01L21/0276 , H01L21/31116 , H01L21/3143
摘要： The present disclosure pertains to a method for plasma etching a semiconductor film stack. The film stack includes at least one layer comprising silicon oxynitride. The method includes etching the silicon oxynitride-comprising layer using an etchant gas mixture comprising chlorine and at least one compound containing fluorine and carbon. The atomic ratio of fluorine to chlorine in the etchant gas ranges between about 3:1 and about 0.01:1; preferably, between about 0.5:1 and about 0.01:1; most preferably, between about 0.25:1 and about 0.1:1. The etchant gas forms a fluorine-comprising polymer or species which deposits on exposed surfaces adjacent to the silicon oxynitride-comprising layer in an amount sufficient to reduce the etch rate of an adjacent material (such as a photoresist) while permitting the etching of the silicon oxynitride-comprising layer.
摘要翻译：本公开涉及用于等离子体蚀刻半导体膜堆叠的方法。薄膜叠层包括至少一层包含氮氧化硅的层。该方法包括使用包含氯和至少一种含氟和碳的化合物的蚀刻剂气体混合物来蚀刻含氧氮化硅层。蚀刻剂气体中氟与氯的原子比范围为约3:1至约0.01:1; 优选约0.5:1至约0.01:1; 最优选在约0.25:1至约0.1:1之间。蚀刻剂气体形成含氟聚合物或物质，它们以足以降低邻近材料（例如光致抗蚀剂）蚀刻速率的量沉积在与含氮氧化硅层相邻的暴露表面上，同时允许蚀刻硅含氧氮化物的层。

5. 发明授权

US06537918B2 Method for etching silicon oxynitride and dielectric antireflection coatings 失效
标题翻译：蚀刻氮氧化硅和介电抗反射涂层的方法
公开(公告)号：US06537918B2
公开(公告)日：2003-03-25
申请号：US09920251
申请日：2001-07-31
申请人： Pavel Ionov , Sung Ho Kim , Dean Li , Chun Yan , James Chang Wang
发明人： Pavel Ionov , Sung Ho Kim , Dean Li , Chun Yan , James Chang Wang
IPC分类号： H01L21302
CPC分类号： H01L21/32139 , H01L21/0276 , H01L21/31116 , H01L21/3143
摘要： A method for plasma etching a semiconductor film stack. The film stack includes at least one layer comprising silicon oxynitride. The method includes etching the silicon oxynitride-comprising layer using an etchant gas mixture comprising chlorine and at least one compound containing fluorine and carbon. The atomic ratio of fluorine to chlorine in the etchant gas ranges between about 3:1 and about 0.01:1; preferably, between about 0.5:1 and about 0.01:1; most preferably, between about 0.25:1 and about 0.1:1. The etchant gas forms a fluorine-comprising polymer or species which deposits on exposed surfaces adjacent to the silicon oxynitride-comprising layer in an amount sufficient to reduce the etch rate of an adjacent material (such as a photoresist) while permitting the etching of the silicon oxynitride-comprising layer.
摘要翻译：一种用于等离子体蚀刻半导体膜堆叠的方法。薄膜叠层包括至少一层包含氮氧化硅的层。该方法包括使用包含氯和至少一种含氟和碳的化合物的蚀刻剂气体混合物来蚀刻含氧氮化硅层。蚀刻剂气体中氟与氯的原子比范围为约3:1至约0.01:1; 优选约0.5:1至约0.01:1; 最优选在约0.25:1至约0.1:1之间。蚀刻剂气体形成含氟聚合物或物质，它们以足以降低邻近材料（例如光致抗蚀剂）蚀刻速率的量沉积在与含氮氧化硅层相邻的暴露表面上，同时允许蚀刻硅含氧氮化物的层。

6. 发明授权

US07399707B2 In situ application of etch back for improved deposition into high-aspect-ratio features 失效
标题翻译：回蚀刻的原位应用可以改善沉积到高纵横比特征
公开(公告)号：US07399707B2
公开(公告)日：2008-07-15
申请号：US11036632
申请日：2005-01-13
申请人： Padmanabhan Krishnaraj , Pavel Ionov , Canfeng Lai , Michael Santiago Cox , Shamouil Shamouilian
发明人： Padmanabhan Krishnaraj , Pavel Ionov , Canfeng Lai , Michael Santiago Cox , Shamouil Shamouilian
IPC分类号： H01L21/302
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/509 , C30B25/105 , H01J37/32935 , H01L21/02164 , H01L21/02274 , H01L21/31116 , H01L21/31612 , H01L21/76837
摘要： A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.
摘要翻译：提供了沉积，蚀刻和沉积的连续原位工艺，用于使用等离子体工艺在衬底上形成膜。可以在没有蚀刻剂气体的单独的等离子体激活的情况下执行回蚀。沉积，蚀刻和沉积的顺序允许填充高纵横比的特征，而过程的连续性导致改善的均匀性。

7. 发明授权

US6010966A Hydrocarbon gases for anisotropic etching of metal-containing layers 失效
标题翻译：用于各向异性蚀刻含金属层的烃气体
公开(公告)号：US6010966A
公开(公告)日：2000-01-04
申请号：US130920
申请日：1998-08-07
申请人： Pavel Ionov
发明人： Pavel Ionov
IPC分类号： H01L21/3213 , H01L21/306
CPC分类号： H01L21/32136
摘要： A process for anisotropically etching a metal-containing layer 15 on a substrate 10 is described. The etching process uses an energized process gas of a comprising halogen-containing etchant gas for etching the metal-containing layer to form volatile metal compounds, and hydrocarbon inhibitor gas having a carbon-to-hydrogen ratio of from about 1:1 to about 1:3, to deposit inhibitor on etched metal features and provide anisotropic etching. More preferably, the hydrocarbon inhibitor gas comprises a high carbon-to-hydrogen ratio of from about 1:1 to 1:2.
摘要翻译：对基板10上的含金属层15进行各向异性蚀刻的工序进行说明。蚀刻工艺使用包含含卤素蚀刻剂气体的赋能过程气体来蚀刻含金属层以形成挥发性金属化合物，以及碳氢比为约1:1至约1:1的烃阻聚剂气体：3，沉积抑制剂蚀刻金属特征并提供各向异性蚀刻。更优选地，烃类抑制剂气体包含约1：1至1：2的高碳氢比。

8. 发明申请

US20050080955A1 Very high dynamic range interface for connecting peripheral devices to a computer 审中-公开
标题翻译：非常高的动态范围界面，用于将外围设备连接到计算机
公开(公告)号：US20050080955A1
公开(公告)日：2005-04-14
申请号：US10948825
申请日：2004-09-23
申请人： Pavel Ionov , Monica Bar-Sever , Scott Jordan
发明人： Pavel Ionov , Monica Bar-Sever , Scott Jordan
IPC分类号： G06F13/12 , H03M1/18
CPC分类号： H03M1/187
摘要： A new very high dynamic range interface for connecting peripheral devices to a computer is disclosed. The interface comprises a normalized analog value signal and a range signal that could be analog or digital. The interface described by the present invention has improved dynamic range, accuracy, bandwidth and latency in comparison to the interfaces commonly used in the art.
摘要翻译：公开了一种用于将外围设备连接到计算机的新的非常高的动态范围界面。该接口包括归一化的模拟值信号和可以是模拟或数字的范围信号。与本领域通常使用的接口相比，本发明描述的接口具有改进的动态范围，精度，带宽和延迟。

9. 发明授权

US06869880B2 In situ application of etch back for improved deposition into high-aspect-ratio features 失效
标题翻译：回蚀刻的原位应用可以改善沉积到高纵横比特征
公开(公告)号：US06869880B2
公开(公告)日：2005-03-22
申请号：US10057014
申请日：2002-01-24
申请人： Padmanabhan Krishnaraj , Pavel Ionov , Canfeng Lai , Michael Santiago Cox , Shamouil Shamouilian
发明人： Padmanabhan Krishnaraj , Pavel Ionov , Canfeng Lai , Michael Santiago Cox , Shamouil Shamouilian
IPC分类号： C23C16/04 , C23C16/44 , C23C16/455 , C23C16/509 , C30B25/10 , H01L21/311 , H01L21/316 , H01L21/768 , H01L21/20
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/509 , C30B25/105 , H01J37/32935 , H01L21/02164 , H01L21/02274 , H01L21/31116 , H01L21/31612 , H01L21/76837
摘要： A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.
摘要翻译：提供了沉积，蚀刻和沉积的连续原位工艺，用于使用等离子体工艺在衬底上形成膜。可以在没有蚀刻剂气体的单独的等离子体激活的情况下执行回蚀。沉积，蚀刻和沉积的顺序允许填充高纵横比的特征，而过程的连续性导致改善的均匀性。

10. 发明申请

US20050124166A1 In situ application of etch back for improved deposition into high-aspect-ratio features 失效
公开(公告)号：US20050124166A1
公开(公告)日：2005-06-09
申请号：US11036632
申请日：2005-01-13
申请人： Padmanabhan Krishnaraj , Pavel Ionov , Canfeng Lai , Michael Cox , Shamouil Shamouilian
发明人： Padmanabhan Krishnaraj , Pavel Ionov , Canfeng Lai , Michael Cox , Shamouil Shamouilian
IPC分类号： C23C16/04 , C23C16/44 , C23C16/455 , C23C16/509 , C30B25/10 , H01L21/311 , H01L21/316 , H01L21/768
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/509 , C30B25/105 , H01J37/32935 , H01L21/02164 , H01L21/02274 , H01L21/31116 , H01L21/31612 , H01L21/76837
摘要： A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式