专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06352049B1 Plasma assisted processing chamber with separate control of species density 失效
标题翻译：等离子辅助处理室具有单独的物种密度控制
公开(公告)号：US06352049B1
公开(公告)日：2002-03-05
申请号：US09119417
申请日：1998-07-20
申请人： Gerald Yin , Arnold Kolandenko , Hong Ching Shan , Peter Loewenhardt , Chii Lee , Yan Ye , Xueyan Qian , Songlin Xu , Arthur Chen , Arthur Sato , Michael Grimbergen , Diana Ma , John Yamartino , Chun Yan , Wade Zawalski
发明人： Gerald Yin , Arnold Kolandenko , Hong Ching Shan , Peter Loewenhardt , Chii Lee , Yan Ye , Xueyan Qian , Songlin Xu , Arthur Chen , Arthur Sato , Michael Grimbergen , Diana Ma , John Yamartino , Chun Yan , Wade Zawalski
IPC分类号： C23E1648
CPC分类号： H01J37/32871
摘要： The present invention provides an apparatus and method, for plasma assisted processing of a workpiece, which provides for separate control of species density within a processing plasma. The present invention has a processing chamber and at least one collateral chamber. The collateral chamber is capable of generating a collateral plasma and delivering it to the processing chamber. To control the densities of the particle species within the processing chamber the present invention may have: a filter interposed between the collateral chamber and the processing chamber, primary chamber source power, several collateral chambers providing separate inputs to the processing chamber, or combinations thereof. Collateral plasma may be: filtered, combined with primary chamber generated plasma, combined with another collateral plasma, or combinations thereof to separately control the densities of the species comprising the processing plasma.
摘要翻译：本发明提供了一种用于工件的等离子体辅助处理的装置和方法，其提供对处理等离子体内的物质密度的单独控制。本发明具有处理室和至少一个辅助室。辅助室能够产生旁路血浆并将其输送到处理室。为了控制处理室内的颗粒物质的密度，本发明可以具有：插入在侧室和处理室之间的过滤器，主室源功率，向处理室提供单独输入的若干附属室，或其组合。附带等离子体可以是：过滤，与初级室产生的等离子体组合，与另一副侧血浆或其组合组合以分别控制包含处理血浆的物质的密度。

2. 发明授权

US5891350A Adjusting DC bias voltage in plasma chambers 失效
标题翻译：调整等离子体室内的直流偏置电压
公开(公告)号：US5891350A
公开(公告)日：1999-04-06
申请号：US666981
申请日：1996-06-20
申请人： Hong Ching Shan , Evans Yip Lee , Michael D Welch , Robert W Wu , Bryan Pu , Paul Ernest Luscher , James David Carducci , Richard Blume
发明人： Hong Ching Shan , Evans Yip Lee , Michael D Welch , Robert W Wu , Bryan Pu , Paul Ernest Luscher , James David Carducci , Richard Blume
IPC分类号： H05H1/46 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H05H1/00
CPC分类号： H01J37/32834 , H01J37/32477 , H01J37/32623 , H01J37/32706
摘要： A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage. By blocking the plasma from reaching the exhaust pump, the exhaust baffle reduces the deposition of unwanted particles on exhaust pump components. The exhaust baffle also reduces the cathode DC bias by reducing the effective surface area of the electrically grounded chamber wall which couples RF power to the plasma.
摘要翻译：一种调整用于制造半导体器件的等离子体室中的阴极直流偏压的方法。电介质屏蔽件位于等离子体和室的电接地部件的选定部分之间，例如电接地室壁。通过控制一个或多个以下参数来调节阴极直流偏压：（1）腔室壁的表面积或由介电屏蔽件阻挡的其它接地部件; （2）电介质的厚度; （3）屏蔽和室壁之间的间隙; 和（4）介电材料的介电常数。在装置方面，本发明是用于制造半导体器件的等离子体室，其具有带有多个弯曲通道的排气挡板。每个通道足够长和弯曲，使得室内的等离子体的任何部分不能延伸超过通道的出口。通过阻止等离子体到达排气泵，排气挡板减少排气泵部件上不想要的颗粒的沉积。排气挡板还通过减少将RF功率耦合到等离子体的电接地室壁的有效表面积来减小阴极DC偏压。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式