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1. 发明授权

US07374636B2 Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor 失效
标题翻译：在磁场增强等离子体反应器中提供均匀等离子体的方法和装置
公开(公告)号：US07374636B2
公开(公告)日：2008-05-20
申请号：US10205870
申请日：2002-07-26
申请人： Keiji Horioka , Chun Yan , Taeho Shin , Roger Alan Lindley , Panyin Hughes , Douglas H. Burns , Evans Y. Lee , Bryan Y. Pu , Qi Li , Mahmoud Dahimene
发明人： Keiji Horioka , Chun Yan , Taeho Shin , Roger Alan Lindley , Panyin Hughes , Douglas H. Burns , Evans Y. Lee , Bryan Y. Pu , Qi Li , Mahmoud Dahimene
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/32623 , H01J37/3266
摘要： A method and apparatus for controlling a magnetic field gradient within a magnetically enhanced plasma reactor. The apparatus comprises a cathode pedestal supporting a wafer within an enclosure, a plurality of electromagnets positioned proximate the enclosure for producing a magnetic field in the enclosure and a magnetic field control element, positioned proximate the electromagnets, for controlling the magnetic field proximate a specific region of the wafer.
摘要翻译：一种用于控制磁增强等离子体反应器内的磁场梯度的方法和装置。该装置包括支撑外壳内的晶片的阴极基座，靠近外壳定位的多个电磁体，用于在外壳中产生磁场，并且磁场控制元件位于电磁体附近，用于控制靠近特定区域的磁场的晶片。

2. 发明授权

US5660744A Plasma generating apparatus and surface processing apparatus 失效
标题翻译：等离子体发生装置和表面处理装置
公开(公告)号：US5660744A
公开(公告)日：1997-08-26
申请号：US492322
申请日：1995-06-19
申请人： Makoto Sekine , Keiji Horioka , Haruo Okano , Katsuya Okumura , Isahiro Hasegawa , Masaki Narita
发明人： Makoto Sekine , Keiji Horioka , Haruo Okano , Katsuya Okumura , Isahiro Hasegawa , Masaki Narita
IPC分类号： H01J37/32 , B23K10/00
CPC分类号： H01J37/32623 , H01J37/3266
摘要： A surface processing apparatus comprises a container provided with a first electrode and a second electrode disposed opposite to the first electrode for supporting a substrate to be processed and filled with a gas at a reduced pressure, an electric field generator for generating an electric field between the first and second electrodes, and a magnetic field generator for generating a magnetic field in the vacuum container. The magnetic field generator comprises a plurality of magnet element groups arranged in a circle around the container so as to form a ring, each of the magnet element groups having an axis directed to a center of the circle and a synthetic magnetization direction and comprising one or a plurality of magnet elements having respective magnetization directions which are synthesized to be equal to the synthetic magnetization direction of the each of the magnetic element groups. One of the magnet element groups is so disposed that the synthetic magnetization direction thereof coincides with the axis thereof, and each of the magnet element groups other than the one magnet element group is so disposed that an angle of the synthetic magnetization direction thereof relative to the synthetic magnetization direction of the one magnet element group is substantially twice an angle of the axis thereof relative to the axis of the one magnet element group.
摘要翻译：表面处理装置包括：容器，其设置有第一电极和与第一电极相对设置的第二电极，用于支撑待处理的基板并在减压下填充气体;电场发生器，用于在第一电极之间产生电场; 第一和第二电极以及用于在真空容器中产生磁场的磁场发生器。磁场发生器包括围绕容器布置成圆形的多个磁体元件组，以便形成环，每个磁体元件组具有指向圆心的合成磁化方向的轴线，并包括一个或多个多个磁体元件，其各自的磁化方向被合成为等于每个磁性元件组的合成磁化方向。一个磁体元件组被设置成合成磁化方向与其轴线重合，并且除了一个磁体元件组之外的每个磁体元件组被设置成使得其合成磁化方向相对于一个磁体元件组的合成磁化方向基本上是相对于一个磁体元件组的轴线的轴的两倍。

3. 发明授权

US5607599A Method of processing a magnetic thin film 失效
标题翻译：磁性薄膜的加工方法
公开(公告)号：US5607599A
公开(公告)日：1997-03-04
申请号：US558507
申请日：1995-11-16
申请人： Katsutaro Ichihara , Michiko Okubo , Keiji Horioka
发明人： Katsutaro Ichihara , Michiko Okubo , Keiji Horioka
IPC分类号： C23F4/00 , H01F41/02 , H01L21/8246 , H01L27/22 , G11C11/14 , C23F1/12
CPC分类号： H01F41/026 , B82Y10/00 , C23F4/00 , H01L43/12
摘要： Disclosed is a method of processing a magnetic thin film, comprising the steps of disposing a mask having a predetermined pattern on a magnetic thin film consisting of a magnetic material containing at least one element selected from the group consisting of Fe, Co and Ni, supplying a reactive gas containing activated BCl.sub.3 to an exposed portion of said magnetic thin film and allowing said reactive gas to react with said magnetic material, and removing the magnetic thin film of the exposed portion to perform a desired patterning.
摘要翻译：公开了一种处理磁性薄膜的方法，包括以下步骤：将具有预定图案的掩模设置在由含有选自Fe，Co和Ni中的至少一种元素的磁性材料构成的磁性薄膜上，含有活化的BCl 3的活性气体到所述磁性薄膜的暴露部分，并允许所述活性气体与所述磁性材料反应，以及除去所述暴露部分的磁性薄膜以进行所需的图案化。

4. 发明授权

US5444207A Plasma generating device and surface processing device and method for processing wafers in a uniform magnetic field 失效
标题翻译：等离子体产生装置和用于在均匀磁场中处理晶片的表面处理装置和方法
公开(公告)号：US5444207A
公开(公告)日：1995-08-22
申请号：US37169
申请日：1993-03-26
申请人： Makoto Sekine , Keiji Horioka , Haruo Okano , Katsuya Okumura , Isahiro Hasegawa , Masaki Narita
发明人： Makoto Sekine , Keiji Horioka , Haruo Okano , Katsuya Okumura , Isahiro Hasegawa , Masaki Narita
IPC分类号： B23K10/00 , H01J37/32 , H01L21/00 , H05H1/18
CPC分类号： H01J37/32623 , B23K10/003 , H01J37/3266
摘要： A surface processing device and method for forming a magnetic field having a uniform strength over a wide area of an electrode surface to generate a uniform high density plasma over the overall surface of a wafer. The device comprises a vacuum container contains a first electrode and a second electrode disposed opposite to the first electrode; a gas feeding system for feeding a predetermined gas into the vacuum container; an evacuating system for maintaining the inside of the container at a reduced pressure; an electric field generating system for generating an electric field in a region between the first and second electrodes; and a magnetic field generating system for generating a magnetic field in the vacuum container. The magnetic field generating system comprising a plurality of magnets arranged around the outer periphery of the container so as to form a ring in such a manner that directions of magnetization thereof differ from adjacent magnetic element making a 720 degree rotation along the circumference of said ring.
摘要翻译：一种用于形成在电极表面的广泛区域上具有均匀强度的磁场的表面处理装置和方法，以在晶片的整个表面上产生均匀的高密度等离子体。该装置包括：真空容器，包含第一电极和与第一电极相对设置的第二电极; 用于将预定气体供给到真空容器中的气体供给系统; 用于在减压下保持容器内部的排气系统; 用于在第一和第二电极之间的区域中产生电场的电场产生系统; 以及用于在真空容器中产生磁场的磁场产生系统。磁场产生系统包括围绕容器的外周布置的多个磁体，以便形成环，使得其磁化方向与相邻的磁性元件不同，沿着所述环的圆周旋转720度。

5. 发明授权

US5250137A Plasma treating apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5250137A
公开(公告)日：1993-10-05
申请号：US731475
申请日：1991-07-17
申请人： Junichi Arami , Toshihisa Nozawa , Keiji Horioka , Katsuya Okumura
发明人： Junichi Arami , Toshihisa Nozawa , Keiji Horioka , Katsuya Okumura
IPC分类号： C23C14/40 , C23C14/50 , C23F4/00 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/683 , B05C5/00
CPC分类号： H01L21/67069 , H01L21/6831
摘要： A plasma treating apparatus includes an electrostatic chuck constructing an electrically conductive layer and insulating layers having the conductive layer sandwiched therebetween. A RF current supplied to a susceptor is prevented from flowing into the conductive layer of the chuck so as to suppress the RF current leakage from a cable connected to the conductive layer of the chuck for high voltage application. The plasma treating apparatus includes a chamber having a first electrode, a second electrode disposed within the chamber, a cylindrical high frequency power supply member inserted from the outside into the chamber such that the tip of the member is connected to the second electrode, high frequency power supply means for supplying a high frequency power through the power supply member to the second electrode so as to generate a plasma in the region between the first and second electrodes within the chamber, an electrostatic chuck arranged on the second electrode and constructed such that a conductive layer is formed within an insulating layer, a cable for applying a high voltage, the cable being inserted into the power supply member and having the tip connected to the conductive layer of the electrostatic chuck, and a power source connected to the cable.
摘要翻译：等离子体处理装置包括构成导电层的静电卡盘和夹在其间的导电层的绝缘层。防止提供给基座的RF电流流入卡盘的导电层，以便抑制与电缆连接的电缆的RF电流泄漏，以用于高电压施加。等离子体处理装置包括具有第一电极，设置在室内的第二电极的室，从外部插入室的圆柱形高频电源构件，使得构件的尖端连接到第二电极，高频电源装置，用于通过所述电源构件向所述第二电极提供高频电力，以在所述室内的所述第一和第二电极之间的区域中产生等离子体;静电吸盘，其布置在所述第二电极上，导电层形成在绝缘层内，用于施加高电压的电缆，所述电缆插入到电源构件中，并且尖端连接到静电卡盘的导电层，以及连接到电缆的电源。

6. 发明授权

US5234527A Liquid level detecting device and a processing apparatus 失效
标题翻译：液面检测装置和处理装置
公开(公告)号：US5234527A
公开(公告)日：1993-08-10
申请号：US731473
申请日：1991-07-17
申请人： Toshihisa Nozawa , Junichi Arami , Yukimasa Yoshida , Keiji Horioka
发明人： Toshihisa Nozawa , Junichi Arami , Yukimasa Yoshida , Keiji Horioka
IPC分类号： C23C14/54 , B01J3/00 , C23C16/46 , C23F4/00 , G01F23/22 , G01F23/24 , H01L21/302 , H01L21/3065
CPC分类号： B01J3/002 , G01F23/22 , H01J2237/2001
摘要： A liquid level detecting device used in a vacuum processing apparatus, the device comprising a liquid container section, an inlet pipe for liquid supply connected to the liquid container section, and outlet pipe for discharging the liquid when the liquid in the liquid container section overflows a predetermined liquid level, a temperature measurement terminal provided in the liquid container section, for detecting the temperature of the liquid in the container section, means for heating or cooling the temperature measurement terminal, and a liquid level detecting section for detecting the surface level of the liquid on the basis of the difference between two temperatures of the liquid measured when the heating or cooling means is in contact with the liquid and when not in contact.
摘要翻译：一种用于真空处理装置的液位检测装置，该装置包括液体容器部分，与液体容器部分连接的液体供给入口管，以及当液体容器部分中的液体溢出时排出液体的出口管预定液位，设置在液体容器部分中的用于检测容器部分中的液体的温度的温度测量端子，用于加热或冷却温度测量端子的装置，以及液位检测部分，用于检测基于当加热或冷却装置与液体接触时和当不接触时测量的液体的两个温度之间的差异的液体。

7. 发明授权

US07575007B2 Chamber recovery after opening barrier over copper 失效
标题翻译：铜开启屏障后室恢复
公开(公告)号：US07575007B2
公开(公告)日：2009-08-18
申请号：US11508345
申请日：2006-08-23
申请人： Hairong Tang , Xiaoye Zhao , Keiji Horioka , Jeremiah T. P. Pender
发明人： Hairong Tang , Xiaoye Zhao , Keiji Horioka , Jeremiah T. P. Pender
IPC分类号： C25F1/00 , C25F3/30 , C25F5/00
CPC分类号： H01L21/31116 , H01J37/32862
摘要： A chamber dry cleaning process particularly useful after a dielectric plasma etch process which exposes an underlying copper metallization. After the dielectric etch process, the production wafer is removed from the chamber and a cleaning gas is excited into a plasma to clean the chamber walls and recover the dielectric etching characteristic of the chamber. Preferably, the cleaning gas is reducing such as hydrogen gas with the addition of nitrogen gas. Alternatively, the cleaning gas may an oxidizing gas. If the wafer pedestal is vacant during the cleaning, it is not electrically biased. If a dummy wafer is placed on the pedestal during cleaning, the pedestal is biased. The cleaning process is advantageously performed every wafer cycle.
摘要翻译：在暴露下面的铜金属化的电介质等离子体蚀刻工艺之后，室干燥方法特别有用。在电介质蚀刻工艺之后，将生产晶片从腔室中取出，将清洁气体激发到等离子体中以清洁腔室壁并恢复腔室的介电蚀刻特性。优选地，通过添加氮气，清洁气体如氢气还原。或者，清洁气体可以是氧化气体。如果晶片基座在清洁过程中空出，则不会电气偏置。如果在清洁时将底座放置在基座上，则基座偏置。有利地，每个晶片周期执行清洁处理。

8. 发明授权

US07196283B2 Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface 有权
标题翻译：等离子体反应堆架空电源电极具有低电弧倾向，圆柱形气体出口和成形表面
公开(公告)号：US07196283B2
公开(公告)日：2007-03-27
申请号：US11046538
申请日：2005-01-28
申请人： Douglas A. Buchberger, Jr. , Daniel J. Hoffman , Olga Regelman , James Carducci , Keiji Horioka , Jang Gyoo Yang
发明人： Douglas A. Buchberger, Jr. , Daniel J. Hoffman , Olga Regelman , James Carducci , Keiji Horioka , Jang Gyoo Yang
IPC分类号： B23K9/00
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/32183 , H01J37/3244
摘要： An overhead gas distribution electrode forming at least a portion of the ceiling of a plasma reactor has a bottom surface facing a processing zone of the reactor. The electrode includes a gas supply manifold for receiving process gas at a supply pressure at a top portion of the electrode and plural pressure-dropping cylindrical orifices extending axially relative to the electrode from the gas supply manifold at one end of each the orifice. A radial gas distribution manifold within the electrode extends radially across the electrode. Plural axially extending high conductance gas flow passages couple the opposite ends of respective ones of the plural pressure-dropping orifices to the radial gas distribution manifold. Plural high conductance cylindrical gas outlet holes are formed in the plasma-facing bottom surface of the electrode and extend axially to the radial gas distribution manifold.
摘要翻译：形成等离子体反应器的天花板的至少一部分的顶部气体分配电极具有面向反应器的处理区域的底面。电极包括用于在电极顶部处的供给压力下接收处理气体的气体供应歧管和在每个孔口的一端处相对于来自气体供应歧管的电极轴向延伸的多个降压圆柱形孔。电极内的径向气体分布歧管径向延伸穿过电极。多个轴向延伸的高电导气流通道将多个降压孔中的相应端部的相对端连接到径向气体分配歧管。在电极的等离子体面向底面中形成多个高电导圆柱形气体出口孔，并且轴向延伸到径向气体分配歧管。

9. 发明授权

US06800213B2 Precision dielectric etch using hexafluorobutadiene 失效
标题翻译：使用六氟丁二烯的精密电介质蚀刻
公开(公告)号：US06800213B2
公开(公告)日：2004-10-05
申请号：US10165249
申请日：2002-06-07
申请人： Ji Ding , Hidehiro Kojiri , Yoshio Ishikawa , Keiji Horioka , Ruiping Wang , Robert W. Wu , Hoiman (Raymond) Hung
发明人： Ji Ding , Hidehiro Kojiri , Yoshio Ishikawa , Keiji Horioka , Ruiping Wang , Robert W. Wu , Hoiman (Raymond) Hung
IPC分类号： H01L213065
CPC分类号： H01L21/31116
摘要： An oxide etching recipe including a heavy hydrogen-free fluorocarbon having F/C ratios less than 2, preferably C4F6, an oxygen-containing gas such as O2 or CO, a lighter fluorocarbon or hydrofluorocarbon, and a noble diluent gas such as Ar or Xe. The amounts of the first three gases are chosen such that the ratio (F—H)/(C—O) is at least 1.5 and no more than 2. Alternatively, the gas mixture may include the heavy fluorocarbon, carbon tetrafluoride, and the diluent with the ratio of the first two chosen such the ratio F/C is between 1.5 and 2.
摘要翻译：具有F / C比小于2，优选C4F6，含氧气体如O 2或CO，重质碳氟化合物或氢氟碳化合物的稀无机氟碳氟化合物和诸如Ar或Xe的稀有稀释气体的氧化物蚀刻配方。选择前三种气体的量，使得比值（FH）/（CO）至少为1.5且不大于2.或者，气体混合物可以包括重碳氟化合物，四氟化碳和稀释剂，其比例的前两个选择的比例F / C在1.5和2之间。

10. 发明授权

US06461533B1 Etchant for silicon oxide and method 失效
标题翻译：氧化硅蚀刻剂和方法
公开(公告)号：US06461533B1
公开(公告)日：2002-10-08
申请号：US09090476
申请日：1998-06-04
申请人： Yasuhiro Horiike , Yoshio Ishikawa , Keiji Horioka
发明人： Yasuhiro Horiike , Yoshio Ishikawa , Keiji Horioka
IPC分类号： C09K1300
CPC分类号： H01L21/31116 , C09K13/08
摘要： A method of etching silicon oxide with high selectivity to a photoresist mask and to a silicon-containing substrate comprising exposing the silicon oxide to a plasma of a precursor etch gas of a fluorocarbon and an organic silane containing at least one organic group. When at least about 10% by weight of the silane is present in the etch gas, the selectivity between the silicon oxide and the photoresist mask layer, and between the silicon oxide and the silicon-containing substrate, increases markedly. High aspect ratio, submicron size openings can be etched.
摘要翻译：一种对光致抗蚀剂掩模和含硅衬底具有高选择性的氧化硅蚀刻的方法，包括将氧化硅暴露于含有至少一个有机基团的碳氟化合物的前体蚀刻气体的等离子体和含有有机硅烷的等离子体。当蚀刻气体中存在至少约10重量％的硅烷时，氧化硅和光致抗蚀剂掩模层之间以及氧化硅和含硅衬底之间的选择性显着增加。高长宽比，亚微米尺寸的开口可被蚀刻。

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