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1. 发明申请

US20130323904A1 METHOD FOR FORMING INSULATING FILM 有权
标题翻译：形成绝缘膜的方法
公开(公告)号：US20130323904A1
公开(公告)日：2013-12-05
申请号：US13984925
申请日：2012-02-17
申请人： Yusuke Takano , Tatsuro Nagahara , Shinde Ninad , Takafumi Iwata
发明人： Yusuke Takano , Tatsuro Nagahara , Shinde Ninad , Takafumi Iwata
IPC分类号： H01L21/762
CPC分类号： H01L21/76224 , C23C18/1212 , C23C18/122 , C23C18/127 , C23C18/1291 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02323 , H01L21/02326 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： [Problem] To provide a method capable of forming an insulating film having homogeneous and high bulk density and less suffering defects.[Means for solving] A substrate surface is coated with a silicon dioxide dispersion containing silicon dioxide fine particles, a polymer, a surfactant and a dispersion medium; and then further coated with a polysilazane composition; and thereafter heated to form an insulating film.
摘要翻译： [问题]提供能够形成具有均匀且高堆积密度和较少遭受缺陷的绝缘膜的方法。 [解决方案]基板表面涂覆有含有二氧化硅细颗粒，聚合物，表面活性剂和分散介质的二氧化硅分散体; 然后进一步用聚硅氮烷组合物涂布; 然后加热形成绝缘膜。

2. 发明授权

US07799513B2 Process for preventing development defect and composition for use in the same 有权
标题翻译：用于预防发展缺陷和组合物的方法
公开(公告)号：US07799513B2
公开(公告)日：2010-09-21
申请号：US10518105
申请日：2003-06-10
申请人： Yasushi Akiyama , Yusuke Takano , Kiyohisa Takahashi , Sung-Eun Hong , Tetsuo Okayasu
发明人： Yasushi Akiyama , Yusuke Takano , Kiyohisa Takahashi , Sung-Eun Hong , Tetsuo Okayasu
IPC分类号： G03F7/00
CPC分类号： G03F7/11 , G03F7/168
摘要： The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a C1 to C4 alkanolamine salt of C4 to C15 perfluoroalkylcarboxylic acid, C4 to C10 perfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed. By this process, compared with the case of not using the composition for preventing development-defects, the amount of reduction in film thickness of the photoresist subsequent to development treatment is made further bigger by 100 Å to 600 Å, and the development-defects on a substrate having a diameter of 8 inches or more is reduced as well as a resist pattern having a good cross section form can be formed without T-top form etc.
摘要翻译：（1）C4〜C15全氟烷基羧酸，C4〜C10全氟烷基磺酸和全氟己二酸的铵盐，四烷基铵盐或C1〜C4烷醇胺盐的预防显影缺陷用组合物，或（2）氟化烷基季铵无机酸的盐，其中所述表面活性剂以相对于酸与碱的比例为1:1-1:3的比例形成在直径为8英寸或更大的基材上的化学放大的光致抗蚀剂涂层上。在施加用于防止上述显影缺陷的组合物之前和/或之后烘烤化学放大的光致抗蚀剂涂层。然后，将具有显影缺陷防止组合物涂层的烘烤涂层曝光，曝光后烘烤和显影。通过该方法，与不使用用于防止显影缺陷的组合物的情况相比，显影处理后的光致抗蚀剂的膜厚减少量进一步大于100埃至600埃，并且显影缺陷在直径为8英寸以上的基板减少，并且可以形成具有良好横截面形状的抗蚀剂图案而不具有T形顶端形式等。

3. 发明授权

US07745093B2 Water soluble resin composition and method for pattern formation using the same 有权
标题翻译：水溶性树脂组合物及其形成方法
公开(公告)号：US07745093B2
公开(公告)日：2010-06-29
申请号：US11547707
申请日：2005-04-08
申请人： Takeshi Nishibe , Sung Eun Hong , Yusuke Takano , Tetsuo Okayasu
发明人： Takeshi Nishibe , Sung Eun Hong , Yusuke Takano , Tetsuo Okayasu
IPC分类号： G03F7/40 , G03F7/11
CPC分类号： G03F7/40 , H01L21/0273 , Y10S430/106 , Y10S430/11 , Y10S430/115 , Y10S430/162 , Y10S430/165
摘要： In the present invention, in a water soluble resin composition for use in a method for pattern formation in which a covering layer is provided on a resist pattern formed of a radiation-sensitive resin composition capable of coping with ArF exposure to increase the width of the resist pattern and thus to realize effective formation of higher density trench or hole pattern, the size reduction level of the resist pattern layer can be further increased as compared with that in the prior art technique, and, in addition, the size reduction level dependency of the coarse-and-fine resist pattern can be reduced. A method for pattern formation using the water soluble resin composition is also provided. The water soluble resin composition which is usable for the method for pattern formation applicable to ArF excimer laser irradiation comprises a water soluble resin, an acid generating agent capable of generating an acid upon heating, a surfactant, a crosslinking agent, and a water-containing solvent.
摘要翻译：在本发明中，在用于图案形成方法的水溶性树脂组合物中，其中在由能够应对ArF曝光的辐射敏感性树脂组合物形成的抗蚀剂图案上设置覆盖层以增加其宽度抗蚀剂图案，从而实现有效形成更高密度的沟槽或孔图案，与现有技术相比，抗蚀剂图案层的尺寸减小水平可以进一步提高，另外，尺寸缩小级依赖性可以减少粗细和抗蚀剂图案。还提供了使用水溶性树脂组合物的图案形成方法。可用于适用于ArF准分子激光照射的图案形成方法的水溶性树脂组合物包括水溶性树脂，加热时能产生酸的酸产生剂，表面活性剂，交联剂和含水的溶剂。

4. 发明申请

US20100119717A1 WATER-SOLUBLE RESIN COMPOSITION FOR THE FORMATION OF MICROPATTERNS AND METHOD FOR THE FORMATION OF MICROPATTERNS WITH THE SAME 审中-公开
标题翻译：用于形成微波炉的水溶性树脂组合物及其形成微波炉的方法
公开(公告)号：US20100119717A1
公开(公告)日：2010-05-13
申请号：US12451150
申请日：2008-05-01
申请人： Sung-Eun Hong , Yusuke Takano , Wen-Bing Kang
发明人： Sung-Eun Hong , Yusuke Takano , Wen-Bing Kang
IPC分类号： B05D3/00 , C08K5/17
CPC分类号： H01L21/0271 , G03F7/40 , H01L21/3085 , H01L21/3086 , H01L21/3088
摘要： A process which comprises applying a water-soluble resin composition comprising a water-soluble vinyl resin, a compound having at least two amino groups in the molecule, a solvent, and, if necessary, an additive such as a surfactant on a resist pattern (2) formed on a substrate (1) to form a water-soluble resin film (3) , modifying part of the water-soluble resin film adjacent to the resist pattern through mixing to form a water-insolubilized layer (4) which cannot be removed by water washing on the surface of the resist pattern, and removing unmodified part of the water-soluble resin film by water washing and which enables the effective scale-down of separation size and hole opening size of a resist pattern to a level finer than the limit of resolution of the wave length of exposure. It is preferable to use as the water-soluble vinyl resin a homopolymer of a nitrogen-containing vinyl monomer such as acrylamine, vinylpyrrolidone or vinylimidazole, a copolymer of two or more nitrogen-containing vinyl monomers, or a copolymer of at least one nitrogen-containing vinyl monomer and at least one nitrogen-free vinyl monomer.
摘要翻译：一种方法，其包括将包含水溶性乙烯基树脂的水溶性树脂组合物，分子中具有至少两个氨基的化合物，溶剂和必要时在抗蚀图案上添加表面活性剂等添加剂 2）形成在基板（1）上以形成水溶性树脂膜（3），通过混合将与抗蚀剂图案相邻的水溶性树脂膜的一部分进行改性以形成不可溶的水不溶层（4）通过在抗蚀剂图案的表面上进行水洗除去，并且通过水洗除去未改性的水溶性树脂膜的部分，并且能够将抗蚀剂图案的分离尺寸和开孔尺寸有效地缩小到比曝光波长分辨率的极限。作为水溶性乙烯基树脂，优选使用丙烯酰胺，乙烯基吡咯烷酮或乙烯基咪唑等含氮乙烯基单体的均聚物，两种以上含氮乙烯基单体的共聚物，或至少一种含氮乙烯基单体的共聚物，含有乙烯基单体和至少一种无氮乙烯基单体。

5. 发明申请

US20080045204A1 COMMUNICATION NETWORK CONTROL SYSTEM, RADIO COMMUNICATION APPARTUS, AND COMMUNICATION NETWORK CONTROL METHOD 审中-公开
标题翻译：通信网络控制系统，无线电通信协议和通信网络控制方法
公开(公告)号：US20080045204A1
公开(公告)日：2008-02-21
申请号：US11755255
申请日：2007-05-30
申请人： Yusuke TAKANO , Toshiyuki TAMURA
发明人： Yusuke TAKANO , Toshiyuki TAMURA
IPC分类号： H04Q7/20
CPC分类号： H04W28/06 , H04W48/06
摘要： The present invention can provide a radio communication apparatus comprising an antenna which receives a restriction signal from a radio base station, a reception circuit which decodes the restriction signal received by said antenna, and a control circuit which controls the radio communication apparatus, in which the control circuit can be adapted to select appropriately a speech outgoing/incoming scheme for performing communication with the radio base station on the basis of the restriction signal from the radio base station. As the speech outgoing/incoming scheme, a domain scheme or a speech communication scheme is used. In addition, the present invention further provides a communication network control system using the radio communication apparatus, and a communication network control method.
摘要翻译：本发明可以提供一种无线电通信装置，其包括从无线电基站接收限制信号的天线，对由所述天线接收的限制信号进行解码的接收电路和控制无线电通信装置的控制电路，控制电路可以适于根据来自无线电基站的限制信号适当地选择用于与无线电基站进行通信的语音输出/输入方案。作为语音输出/输入方案，使用域方案或语音通信方案。另外，本发明还提供一种使用该无线通信装置的通信网络控制系统和通信网络控制方法。

6. 发明授权

US07195863B2 Development defect preventing process and material 有权
标题翻译：开发缺陷预防过程和材料
公开(公告)号：US07195863B2
公开(公告)日：2007-03-27
申请号：US10311787
申请日：2001-06-14
申请人： Yusuke Takano , Kazuyo Ijima , Satoru Funato , Yoshio Murakami , Hatsuyuki Tanaka
发明人： Yusuke Takano , Kazuyo Ijima , Satoru Funato , Yoshio Murakami , Hatsuyuki Tanaka
IPC分类号： G03F7/30 , G03F7/38
CPC分类号： G03F7/322 , G03F7/0048 , G03F7/0382 , G03F7/0392 , G03F7/11 , G03F7/168 , H01L21/0274
摘要： A composition for reducing development defects comprising an acidic composition containing, for example, a surfactant applied onto a chemically amplified photoresist coating formed on a substrate having a diameter of 8 inches or more. By this process, the surface of the resist is rendered hydrophilic and the formation of slightly soluble layer in a developer on the surface of the resist is prevented. In addition, by proper diffusion amount of acid from the composition for reducing development defects, the amount of reduction in thickness of the chemically amplified photoresist coating after development is increased by 10 Å to 500 Å in comparison with the case of not applying the composition for reducing development defects to form a resist pattern not having a deteriorated pattern profile such as T-top or round top.
摘要翻译：一种用于减少显影缺陷的组合物，其包含含有例如施加到直径为8英寸或更大的基底上形成的化学放大光致抗蚀剂涂层上的表面活性剂的酸性组合物。通过该工艺，抗蚀剂的表面变得亲水，并且防止在抗蚀剂表面上的显影剂中形成微溶层。此外，通过适当扩散量的用于减少显影缺陷的组合物的酸，与未将组合物不相适应的情况相比，显影后化学放大光致抗蚀剂涂层的厚度减少量增加了10埃至500埃减少显影缺陷以形成不具有劣化图案轮廓的抗蚀剂图案，例如T顶或圆顶。

7. 发明申请

US20070059644A1 Micropattern formation material and method of micropattern formation 审中-公开
标题翻译：微图案形成材料和微图案形成方法
公开(公告)号：US20070059644A1
公开(公告)日：2007-03-15
申请号：US10557926
申请日：2004-06-04
申请人： Kiyohisa Takahashi , Yusuke Takano
发明人： Kiyohisa Takahashi , Yusuke Takano
IPC分类号： G03C5/00
CPC分类号： H01L21/0274 , G03F7/0035 , G03F7/40
摘要： The present invention provides a method of forming a fine pattern, comprising the steps of forming a resist pattern 3 made of a chemically amplified photoresist on a substrate 1 with a diameter of 6 inches or more, applying a fine pattern forming material containing a water-soluble resin, a water-soluble crosslinking agent and water or a mixed solvent of water and a water-soluble organic solvent to form a coated layer 4, baking the chemically amplified photoresist pattern and the coated layer, and developing the coated layer after baking, wherein the water-soluble resin in the fine pattern forming material is a water-soluble resin, the peak temperature of heat of fusion of which in a DSC curve is higher than the baking temperature in the above baking step and simultaneously higher than 130° C.
摘要翻译：本发明提供一种形成精细图案的方法，包括以下步骤：在直径为6英寸或更大的基底1上形成由化学放大光致抗蚀剂制成的抗蚀剂图案3，施加含有水溶性聚合物的精细图案形成材料，可溶性树脂，水溶性交联剂和水或水和水溶性有机溶剂的混合溶剂形成涂层4，烘烤化学放大的光致抗蚀剂图案和涂层，并烘烤后显影涂层，其中精细图案形成材料中的水溶性树脂是水溶性树脂，其DSC曲线中的熔化热的峰值温度高于上述烘烤步骤中的烘烤温度，同时高于130℃ 。

8. 发明授权

US07018785B2 Method for forming pattern and treating agent for use therein 有权
标题翻译：用于形成图案和处理剂的方法
公开(公告)号：US07018785B2
公开(公告)日：2006-03-28
申请号：US10416412
申请日：2001-10-24
申请人： Kazuyo Ono , Yusuke Takano , Hatsuyuki Tanaka , Satoru Funato
发明人： Kazuyo Ono , Yusuke Takano , Hatsuyuki Tanaka , Satoru Funato
IPC分类号： G03F7/00
CPC分类号： G03F7/0382 , G03F7/0392 , G03F7/168
摘要： A method of forming resist patterns comprises the steps of (a) applying and forming a chemically amplified photoresist film, (b) applying a treating agent with a pH value of 1.3 to 4.5 onto said chemically amplified photoresist film, (c) baking said chemically amplified photoresist film after at least one of the steps of applying and forming said chemically amplified photoresist film and applying said treating agent, (d) selectively exposing said chemically amplified photoresist film, (e) post exposure-baking said chemically amplified photoresist film, and (f) developing said chemically amplified photoresist film, wherein the contact angle of a non-exposed portion of said chemically amplified photoresist film to a developing solution after wash with water to remove the treating agent on the photoresist and spin-drying before development is made lower by 10° to 110° than that in the case where said treating agent is not applied. In this method, the wetting property of the developing solution to the photoresist film are improved and the influence of floating basic species are reduced by the action of an acid component such as organic acid contained in the treating agent to form resist patterns with good shape.
摘要翻译：形成抗蚀剂图案的方法包括以下步骤：（a）施加和形成化学放大的光致抗蚀剂膜，（b）将pH值为1.3至4.5的处理剂施加到所述化学放大的光致抗蚀剂膜上，（c）在施加和形成所述化学放大光致抗蚀剂膜并施加所述处理剂的步骤中的至少一个步骤之后，（d）选择性地暴露所述化学放大的光致抗蚀剂膜，（e）曝光后曝光烘烤所述化学放大的光致抗蚀剂膜，以及（f）显影所述化学放大型光致抗蚀剂膜，其中使用所述化学放大的光致抗蚀剂膜的未曝光部分与水洗涤后的显影溶液的接触角，以除去光刻胶上的处理剂并在显影前进行旋转干燥比不使用所述处理剂的情况低10°〜110°。在该方法中，改善了显影液对光致抗蚀剂膜的润湿性能，并且由于处理剂中所含的有机酸等酸成分的作用，漂浮的碱性物质的影响降低，形成具有良好形状的抗蚀剂图案。

9. 发明授权

US5844249A Apparatus for detecting defects of wires on a wiring board wherein optical sensor includes a film of polymer non-linear optical material 失效
标题翻译：用于检测布线板上的导线缺陷的装置，其中光学传感器包括聚合物非线性光学材料的薄膜
公开(公告)号：US5844249A
公开(公告)日：1998-12-01
申请号：US779571
申请日：1997-01-07
申请人： Yusuke Takano , Shizuo Ogura , Tsunetoshi Sugiyama , Wen-Bing Kang
发明人： Yusuke Takano , Shizuo Ogura , Tsunetoshi Sugiyama , Wen-Bing Kang
IPC分类号： G01N21/956 , G01R31/309 , G01N21/86
CPC分类号： G01N21/956 , G01R31/309
摘要： A detecting apparatus capable of supporting even narrow wire widths and of detecting defects of wires in a non-contact manner is provided. The detecting apparatus comprises an optical sensor, a sensor head, and a signal processing unit. The optical sensor comprises a transparent substrate, a transparent electrode disposed on the transparent substrate, a thin film of a polymer non-linear optical material disposed on the transparent electrode, and a reflective film disposed on the thin film, and is positioned in close approximation to and without contacting an electrode to be measured on the wiring board. The sensor head comprises a light source, optical means for guiding light from the light source into the optical sensor, and detecting means for detecting reflected light from the optical sensor. The detecting means supplies the signal processing unit with a signal corresponding to the intensity of the reflected light when the electrode on the wiring board is applied with a voltage.
摘要翻译：提供能够以非接触方式支持甚至窄线宽度和检测线的缺陷的检测装置。检测装置包括光学传感器，传感器头和信号处理单元。光学传感器包括透明基板，设置在透明基板上的透明电极，设置在透明电极上的聚合物非线性光学材料的薄膜和设置在薄膜上的反射膜，并且近似定位在接线板上接触和不接触要测量的电极。传感器头包括光源，用于将来自光源的光引导到光学传感器中的光学装置，以及用于检测来自光学传感器的反射光的检测装置。当施加电压时，检测装置向信号处理单元提供与反射光的强度对应的信号。

10. 发明授权

US08929884B2 Communication network control system, radio communication apparatus, and communication network control method 有权
标题翻译：通信网络控制系统，无线通信装置和通信网络控制方法
公开(公告)号：US08929884B2
公开(公告)日：2015-01-06
申请号：US13861811
申请日：2013-04-12
申请人： Yusuke Takano , Toshiyuki Tamura
发明人： Yusuke Takano , Toshiyuki Tamura
IPC分类号： H04W28/06 , H04W48/06
CPC分类号： H04W28/06 , H04W48/06
摘要： The present invention can provide a radio communication apparatus comprising an antenna which receives a restriction signal from a radio base station, a reception circuit which decodes the restriction signal received by said antenna, and a control circuit which controls the radio communication apparatus, in which the control circuit can be adapted to select appropriately a speech outgoing/incoming scheme for performing communication with the radio base station on the basis of the restriction signal from the radio base station. As the speech outgoing/incoming scheme, a domain scheme or a speech communication scheme is used. In addition, the present invention further provides a communication network control system using the radio communication apparatus, and a communication network control method.
摘要翻译：本发明可以提供一种无线电通信装置，其包括从无线电基站接收限制信号的天线，对由所述天线接收的限制信号进行解码的接收电路和控制无线电通信装置的控制电路，控制电路可以适于根据来自无线电基站的限制信号适当地选择用于与无线电基站进行通信的语音输出/输入方案。作为语音输出/输入方案，使用域方案或语音通信方案。另外，本发明还提供一种使用该无线通信装置的通信网络控制系统和通信网络控制方法。

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