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1. 发明授权

US07195863B2 Development defect preventing process and material 有权
标题翻译：开发缺陷预防过程和材料
公开(公告)号：US07195863B2
公开(公告)日：2007-03-27
申请号：US10311787
申请日：2001-06-14
申请人： Yusuke Takano , Kazuyo Ijima , Satoru Funato , Yoshio Murakami , Hatsuyuki Tanaka
发明人： Yusuke Takano , Kazuyo Ijima , Satoru Funato , Yoshio Murakami , Hatsuyuki Tanaka
IPC分类号： G03F7/30 , G03F7/38
CPC分类号： G03F7/322 , G03F7/0048 , G03F7/0382 , G03F7/0392 , G03F7/11 , G03F7/168 , H01L21/0274
摘要： A composition for reducing development defects comprising an acidic composition containing, for example, a surfactant applied onto a chemically amplified photoresist coating formed on a substrate having a diameter of 8 inches or more. By this process, the surface of the resist is rendered hydrophilic and the formation of slightly soluble layer in a developer on the surface of the resist is prevented. In addition, by proper diffusion amount of acid from the composition for reducing development defects, the amount of reduction in thickness of the chemically amplified photoresist coating after development is increased by 10 Å to 500 Å in comparison with the case of not applying the composition for reducing development defects to form a resist pattern not having a deteriorated pattern profile such as T-top or round top.
摘要翻译：一种用于减少显影缺陷的组合物，其包含含有例如施加到直径为8英寸或更大的基底上形成的化学放大光致抗蚀剂涂层上的表面活性剂的酸性组合物。通过该工艺，抗蚀剂的表面变得亲水，并且防止在抗蚀剂表面上的显影剂中形成微溶层。此外，通过适当扩散量的用于减少显影缺陷的组合物的酸，与未将组合物不相适应的情况相比，显影后化学放大光致抗蚀剂涂层的厚度减少量增加了10埃至500埃减少显影缺陷以形成不具有劣化图案轮廓的抗蚀剂图案，例如T顶或圆顶。

2. 发明授权

US07018785B2 Method for forming pattern and treating agent for use therein 有权
标题翻译：用于形成图案和处理剂的方法
公开(公告)号：US07018785B2
公开(公告)日：2006-03-28
申请号：US10416412
申请日：2001-10-24
申请人： Kazuyo Ono , Yusuke Takano , Hatsuyuki Tanaka , Satoru Funato
发明人： Kazuyo Ono , Yusuke Takano , Hatsuyuki Tanaka , Satoru Funato
IPC分类号： G03F7/00
CPC分类号： G03F7/0382 , G03F7/0392 , G03F7/168
摘要： A method of forming resist patterns comprises the steps of (a) applying and forming a chemically amplified photoresist film, (b) applying a treating agent with a pH value of 1.3 to 4.5 onto said chemically amplified photoresist film, (c) baking said chemically amplified photoresist film after at least one of the steps of applying and forming said chemically amplified photoresist film and applying said treating agent, (d) selectively exposing said chemically amplified photoresist film, (e) post exposure-baking said chemically amplified photoresist film, and (f) developing said chemically amplified photoresist film, wherein the contact angle of a non-exposed portion of said chemically amplified photoresist film to a developing solution after wash with water to remove the treating agent on the photoresist and spin-drying before development is made lower by 10° to 110° than that in the case where said treating agent is not applied. In this method, the wetting property of the developing solution to the photoresist film are improved and the influence of floating basic species are reduced by the action of an acid component such as organic acid contained in the treating agent to form resist patterns with good shape.
摘要翻译：形成抗蚀剂图案的方法包括以下步骤：（a）施加和形成化学放大的光致抗蚀剂膜，（b）将pH值为1.3至4.5的处理剂施加到所述化学放大的光致抗蚀剂膜上，（c）在施加和形成所述化学放大光致抗蚀剂膜并施加所述处理剂的步骤中的至少一个步骤之后，（d）选择性地暴露所述化学放大的光致抗蚀剂膜，（e）曝光后曝光烘烤所述化学放大的光致抗蚀剂膜，以及（f）显影所述化学放大型光致抗蚀剂膜，其中使用所述化学放大的光致抗蚀剂膜的未曝光部分与水洗涤后的显影溶液的接触角，以除去光刻胶上的处理剂并在显影前进行旋转干燥比不使用所述处理剂的情况低10°〜110°。在该方法中，改善了显影液对光致抗蚀剂膜的润湿性能，并且由于处理剂中所含的有机酸等酸成分的作用，漂浮的碱性物质的影响降低，形成具有良好形状的抗蚀剂图案。

3. 发明授权

US06309789B1 Composition for reflection reducing coating 有权
标题翻译：防反射涂层用组合物
公开(公告)号：US06309789B1
公开(公告)日：2001-10-30
申请号：US09485087
申请日：2000-05-25
申请人： Yusuke Takano , Hatsuyuki Tanaka , Kiyofumi Takano , Yutaka Hashimoto
发明人： Yusuke Takano , Hatsuyuki Tanaka , Kiyofumi Takano , Yutaka Hashimoto
IPC分类号： G03F7004
CPC分类号： C09D5/00 , G03F7/091
摘要： The anti-reflective coating composition comprising at least perfluoroalkylsulfonic acid (A) represented by the general formula: CnF2n+1SO3H (n is an integer of 4 to 8), organic amine (B), water-soluble polymer (C), perfluoroalkyl sulfonamide (D) represented by the general formula: CnF2n+1SO2NH2 (n is an integer of 1 to 8) and water (E) and having a pH value of 1.3 to 3.3 is applied onto a photoresist film formed on a substrate, thus forming an anti-reflective coating. The photoresist and anti-reflective coating are then exposed to light and developed to give a resist pattern. The coating composition can form a uniform anti-reflective coating free of standing wave, multiple reflection, T-top and PED (Post Exposure Delay) in a small amount of drip onto any types of resists regardless of the surface shape of a substrate.
摘要翻译：所述抗反射涂料组合物至少包含由以下通式表示的全氟烷基磺酸（A）：CnF2n + 1SO3H（n为4〜8的整数），有机胺（B），水溶性聚合物（C），全氟烷基磺酰胺（D）由CnF2n + 1SO2NH2（n为1〜8的整数）和水（E）表示，pH值为1.3〜3.3的物质涂布到形成在基板上的光致抗蚀剂膜上，形成防反射涂层。然后将光致抗蚀剂和抗反射涂层曝光并显影以得到抗蚀剂图案。涂料组合物可以形成均匀的抗反射涂层，无需驻留波，多重反射，T顶和PED（Post Exposure Delay），少量滴落到任何类型的抗蚀剂上，而不管基材的表面形状如何。

4. 发明授权

US06692892B1 Composition for antireflection coating 失效
标题翻译：抗反射涂层用组合物
公开(公告)号：US06692892B1
公开(公告)日：2004-02-17
申请号：US09889184
申请日：2001-07-10
申请人： Yusuke Takano , Hatsuyuki Tanaka , Dong Han Lee
发明人： Yusuke Takano , Hatsuyuki Tanaka , Dong Han Lee
IPC分类号： G03F700
CPC分类号： G03F7/091 , Y10S430/151
摘要： A resist pattern having a good form without any T-top or round top is obtained by coating on a photoresist layer an anti-reflective coating composition containing at least (a) polyacrylic acid, (b) polyvinyl pyrrolidone, (c) CnF2n+1COOOH (wherein n represents an integer of 3 to 11) and (d) tetramethylammonium hydroxide to form an anti-reflective coating, and conducting patternwise exposure and development.
摘要翻译：通过在光致抗蚀剂层上涂覆至少包含（a）聚丙烯酸，（b）聚乙烯吡咯烷酮，（c）CnF 2 n + 1COOOH（a）聚丙烯酸的抗反射涂料组合物，得到具有没有任何T顶或圆顶的良好形式的抗蚀剂图案（其中n表示3至11的整数）和（d）四甲基氢氧化铵以形成抗反射涂层，并进行图案曝光和显影。

5. 发明授权

US07141177B2 Etching method and composition for forming etching protective layer 有权
标题翻译：用于形成蚀刻保护层的蚀刻方法和组合物
公开(公告)号：US07141177B2
公开(公告)日：2006-11-28
申请号：US10487658
申请日：2002-09-04
申请人： Hatsuyuki Tanaka
发明人： Hatsuyuki Tanaka
IPC分类号： B44C1/22
CPC分类号： H01L21/32139 , G03F7/40 , H01L21/0274 , H01L21/3081 , H01L21/31144
摘要： This invention offers a method to improve-etching resistance of etching mask upon etching comprising steps of forming a pattern on a substrate by using photoresist, applying a composition for forming an etching protection layer containing water-soluble or water-dispersible resin, crosslinking agent and water and/or water-soluble organic solvent as a solvent, forming etching protection layer which is insoluble in a developer containing water in the interface between a composition for forming an etching protection layer and a photoresist by heating, removing by a developer unnecessary area excluding etching protection layer made of a composition for forming an etching protection layer, and treating a substrate by etching using photoresist pattern as a mask.
摘要翻译：本发明提供了一种提高蚀刻掩模在蚀刻时的耐蚀性的方法，包括以下步骤：通过使用光致抗蚀剂在基片上形成图案，施加用于形成含有水溶性或水分散性树脂的蚀刻保护层的组合物，交联剂和水和/或水溶性有机溶剂作为溶剂，在加热下形成蚀刻保护层的组合物和光刻胶之间的界面中形成不溶于含水显影剂的蚀刻保护层，除去由显影剂排出的不需要的区域由用于形成蚀刻保护层的组合物制成的蚀刻保护层，以及使用光致抗蚀剂图案作为掩模的蚀刻来处理基板。

6. 发明授权

US06329126B1 Developer solution for acitinic ray sensitive resist 失效
标题翻译：用于acitinic光敏抗蚀剂的显影剂溶液
公开(公告)号：US06329126B1
公开(公告)日：2001-12-11
申请号：US08339340
申请日：1994-11-14
申请人： Hatsuyuki Tanaka , Mitsuru Sato , Toshimasa Nakayama , Hiroshi Komano
发明人： Hatsuyuki Tanaka , Mitsuru Sato , Toshimasa Nakayama , Hiroshi Komano
IPC分类号： G03F732
CPC分类号： G03F7/322
摘要： Disclosed is a novel aqueous developer solution used in the development treatment of an actinic ray-sensitive resist for the manufacture of, for example, semiconductor devices, which is capable of giving a patterned resist layer free from the troubles of film residue or scum deposition in any finest patterning. The developer solution contains, in addition to a nitrogen-containing organic basic compound, e.g., tetramethyl ammonium hydroxide, dissolved in an aqueous medium as the solvent, an anionic surface active agent which is a diphenyl ether compound having at least one ammonium sulfonate group, such as an ammonium alkyl diphenylether sulfonate, in a concentration of 0.05 to 5% by weight.
摘要翻译：公开了一种用于显影处理用于制造例如半导体器件的光化抗敏抗蚀剂的新型水性显影剂溶液，其能够提供没有膜残留物或浮渣沉积问题的图案化抗蚀剂层任何最好的图案。除了溶解在作为溶剂的水性介质中的含氮有机碱性化合物例如四甲基氢氧化铵之外，显影剂溶液还含有具有至少一个磺酸铵基团的二苯基醚化合物的阴离子表面活性剂，例如烷基二苯基醚磺酸铵，其浓度为0.05-5重量％。

7. 发明授权

US5543268A Developer solution for actinic ray-sensitive resist 失效
标题翻译：用于光化射线敏感抗蚀剂的显影剂溶液
公开(公告)号：US5543268A
公开(公告)日：1996-08-06
申请号：US231877
申请日：1994-04-22
申请人： Hatsuyuki Tanaka , Mitsuru Sato , Toshimasa Nakayama , Hiroshi Komano
发明人： Hatsuyuki Tanaka , Mitsuru Sato , Toshimasa Nakayama , Hiroshi Komano
IPC分类号： G03F7/32
CPC分类号： G03F7/322
摘要： Disclosed is a novel aqueous developer solution used in the development treatment of an actinic ray-sensitive resist for the manufacture of, for example, semiconductor devices, which is capable of giving a patterned resist layer free from the troubles of film residue or scum deposition in any finest patterning. The developer solution contains, in addition to a nitrogen-containing organic basic compound, e.g., tetramethyl ammonium hydroxide, dissolved in an aqueous medium as the solvent, an anionic surface active agent which is a diphenyl ether compound having at least one ammonium sulfonate group, such as an ammonium alkyl diphenylether sulfonate, in a concentration of 0.05 to 5% by weight.
摘要翻译：公开了一种用于显影处理用于制造例如半导体器件的光化抗敏抗蚀剂的新型水性显影剂溶液，其能够提供没有膜残留物或浮渣沉积问题的图案化抗蚀剂层任何最好的图案。除了溶解在作为溶剂的水性介质中的含氮有机碱性化合物例如四甲基氢氧化铵之外，显影剂溶液还含有具有至少一个磺酸铵基团的二苯基醚化合物的阴离子表面活性剂，例如烷基二苯基醚磺酸铵，其浓度为0.05-5重量％。

8. 发明授权

US4882260A Positive-working photosensitive quinone diazide composition with alkali insoluble dye and alkali soluble dye 失效
标题翻译：正色光敏醌二叠氮化合物与碱不溶性染料和碱溶性染料
公开(公告)号：US4882260A
公开(公告)日：1989-11-21
申请号：US059556
申请日：1987-06-05
申请人： Hidekatsu Kohara , Nobuo Tokutake , Masanori Miyabe , Toshimasa Nakayama , Shingo Asaumi , Hatsuyuki Tanaka , Yoshiaki Arai
发明人： Hidekatsu Kohara , Nobuo Tokutake , Masanori Miyabe , Toshimasa Nakayama , Shingo Asaumi , Hatsuyuki Tanaka , Yoshiaki Arai
IPC分类号： G03C1/00 , C09D161/08 , G03C1/72 , G03F7/004 , G03F7/022 , G03F7/025 , G03F7/04 , G03F7/09 , H01L21/027 , H01L21/30
CPC分类号： G03F7/091
摘要： The photosensitive composition, which is suitable as a photoresist material in fine patterning works for the manufacture of semiconductor devices, contains, as a photoextinctive agent, a combination of an alkali-insoluble dye and an alkali-soluble dye each having absorptivity of light in the wavelength region from 230 to 500 nm in a specified amount and in a specified ratio between them. By virtue of the formulation of combined dyes, the undesirable phenomenon of halation by the underlying aluminum coating layer on the substrate surface is greatly decreased so that patterned resist layer obtained with the composition is a high-fidelity reproduction of the original pattern even in a submicron range of fineness with good rectangularity of the cross sectional form of the patterned lines.
摘要翻译：在制造半导体器件的精细图案化中适合作为光致抗蚀剂材料的光敏组合物包含作为光敏剂的碱不溶性染料和碱溶性染料的组合，其中每种具有光吸收性的染料波长范围为230〜500nm，以规定的量和它们之间的规定比例。由于组合染料的配制，基板表面上的下面的铝涂层的不期望的卤化现象大大降低，使得用该组合物获得的图案化抗蚀剂层即使在亚微米中也是原始图案的高保真再现图案线的横截面形状的良好矩形度的细度范围。

9. 发明授权

US4833067A Developing solution for positive-working photoresist comprising tmah and non-ionic surfactant 失效
标题翻译：用于正工作光致抗蚀剂的显影溶液包含tmah和非离子表面活性剂
公开(公告)号：US4833067A
公开(公告)日：1989-05-23
申请号：US246930
申请日：1988-09-19
申请人： Hatsuyuki Tanaka , Hidekatsu Kohara , Yoshiyuki Sato , Shingo Asaumi , Toshimasa Nakayama , Akira Yokota , Hisashi Nakane
发明人： Hatsuyuki Tanaka , Hidekatsu Kohara , Yoshiyuki Sato , Shingo Asaumi , Toshimasa Nakayama , Akira Yokota , Hisashi Nakane
IPC分类号： G03C1/72 , G03C5/18 , G03F7/30 , G03F7/32 , H01L21/027 , H01L21/30
CPC分类号： G03F7/322 , G03C5/18
摘要： The aqueous developing solution of the invention for positive-working photoresist compositions contains, in addition to an organic basic compound free from metallic ions, such as tetramethyl ammonium hydroxide and choline, as the principal ingredient, from 50 to 5000 ppm of an acetylene alcohol. In comparison with conventional developing solutions, the inventive developing solution is advantageous in the uniformity of the patterned photoresist layer, higher sensitivity and smaller temperature dependency of development and less drawbacks due to foaming of the solution.
摘要翻译：本发明的正性光致抗蚀剂组合物的水性显影液除了含有金属离子的有机碱性化合物外，还含有氢氧化四甲基铵和胆碱作为主要成分，为50-5000ppm的乙炔醇。与传统的显影液相比，本发明的显影溶液在图案化光刻胶层的均匀性方面是有利的，更高的灵敏度和更小的显影温度依赖性以及由于溶液的发泡而引起的缺点。

10. 发明授权

US4824762A Method for rinse treatment of a substrate 失效
标题翻译：冲洗处理基材的方法
公开(公告)号：US4824762A
公开(公告)日：1989-04-25
申请号：US67313
申请日：1987-06-26
申请人： Masakazu Kobayashi , Shingo Asaumi , Hatsuyuki Tanaka
发明人： Masakazu Kobayashi , Shingo Asaumi , Hatsuyuki Tanaka
IPC分类号： H01L21/30 , G03C11/00 , G03F7/00 , G03F7/26 , G03F7/42 , H01L21/027 , H01L21/461 , G03C11/12 , G03C5/00
CPC分类号： G03F7/425
摘要： The improvement of the invention consists in the use of a specific ether compound, e.g., diethyleneglycol monomethyl, monoethyl and monobutyl ethers, dipropyleneglycol monomethyl and monoethyl ethers, triethyleneglycol monomethyl and monoethyl ethers and tripropyleneglycol monomethyl ether, as a rinse solvent for a substrate from which the pattern photoresist layer has been removed with a remover solution in the photolithographic processing of semiconductor devices. The rinse solvent is free from the problems in the toxicity to human body and environment pollution relative to waste disposal as well as the danger of fire. The rinse solvent is versatile to be applicable to both of the negative- and positive-working photoresist compositions. Further advantages are obtained by adding an aliphatic amine compound to the rinse solvent.
摘要翻译：本发明的改进在于使用特定的醚化合物，例如二甘醇单甲基，单乙基和单丁基醚，二丙二醇单甲基和单乙基醚，三乙二醇单甲基和单乙基醚和三丙二醇单甲醚作为底物的漂洗溶剂，在半导体器件的光刻处理中，用去除剂溶液除去图案光致抗蚀剂层。冲洗溶剂没有相对于废物处理对人体的毒性和环境污染的问题以及火灾的危险。漂洗溶剂是通用的，适用于负性和正性光致抗蚀剂组合物。通过向漂洗溶剂中加入脂族胺化合物可获得进一步的优点。

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