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1. 发明授权

US07195863B2 Development defect preventing process and material 有权
标题翻译：开发缺陷预防过程和材料
公开(公告)号：US07195863B2
公开(公告)日：2007-03-27
申请号：US10311787
申请日：2001-06-14
申请人： Yusuke Takano , Kazuyo Ijima , Satoru Funato , Yoshio Murakami , Hatsuyuki Tanaka
发明人： Yusuke Takano , Kazuyo Ijima , Satoru Funato , Yoshio Murakami , Hatsuyuki Tanaka
IPC分类号： G03F7/30 , G03F7/38
CPC分类号： G03F7/322 , G03F7/0048 , G03F7/0382 , G03F7/0392 , G03F7/11 , G03F7/168 , H01L21/0274
摘要： A composition for reducing development defects comprising an acidic composition containing, for example, a surfactant applied onto a chemically amplified photoresist coating formed on a substrate having a diameter of 8 inches or more. By this process, the surface of the resist is rendered hydrophilic and the formation of slightly soluble layer in a developer on the surface of the resist is prevented. In addition, by proper diffusion amount of acid from the composition for reducing development defects, the amount of reduction in thickness of the chemically amplified photoresist coating after development is increased by 10 Å to 500 Å in comparison with the case of not applying the composition for reducing development defects to form a resist pattern not having a deteriorated pattern profile such as T-top or round top.
摘要翻译：一种用于减少显影缺陷的组合物，其包含含有例如施加到直径为8英寸或更大的基底上形成的化学放大光致抗蚀剂涂层上的表面活性剂的酸性组合物。通过该工艺，抗蚀剂的表面变得亲水，并且防止在抗蚀剂表面上的显影剂中形成微溶层。此外，通过适当扩散量的用于减少显影缺陷的组合物的酸，与未将组合物不相适应的情况相比，显影后化学放大光致抗蚀剂涂层的厚度减少量增加了10埃至500埃减少显影缺陷以形成不具有劣化图案轮廓的抗蚀剂图案，例如T顶或圆顶。

2. 发明授权

US07018785B2 Method for forming pattern and treating agent for use therein 有权
标题翻译：用于形成图案和处理剂的方法
公开(公告)号：US07018785B2
公开(公告)日：2006-03-28
申请号：US10416412
申请日：2001-10-24
申请人： Kazuyo Ono , Yusuke Takano , Hatsuyuki Tanaka , Satoru Funato
发明人： Kazuyo Ono , Yusuke Takano , Hatsuyuki Tanaka , Satoru Funato
IPC分类号： G03F7/00
CPC分类号： G03F7/0382 , G03F7/0392 , G03F7/168
摘要： A method of forming resist patterns comprises the steps of (a) applying and forming a chemically amplified photoresist film, (b) applying a treating agent with a pH value of 1.3 to 4.5 onto said chemically amplified photoresist film, (c) baking said chemically amplified photoresist film after at least one of the steps of applying and forming said chemically amplified photoresist film and applying said treating agent, (d) selectively exposing said chemically amplified photoresist film, (e) post exposure-baking said chemically amplified photoresist film, and (f) developing said chemically amplified photoresist film, wherein the contact angle of a non-exposed portion of said chemically amplified photoresist film to a developing solution after wash with water to remove the treating agent on the photoresist and spin-drying before development is made lower by 10° to 110° than that in the case where said treating agent is not applied. In this method, the wetting property of the developing solution to the photoresist film are improved and the influence of floating basic species are reduced by the action of an acid component such as organic acid contained in the treating agent to form resist patterns with good shape.
摘要翻译：形成抗蚀剂图案的方法包括以下步骤：（a）施加和形成化学放大的光致抗蚀剂膜，（b）将pH值为1.3至4.5的处理剂施加到所述化学放大的光致抗蚀剂膜上，（c）在施加和形成所述化学放大光致抗蚀剂膜并施加所述处理剂的步骤中的至少一个步骤之后，（d）选择性地暴露所述化学放大的光致抗蚀剂膜，（e）曝光后曝光烘烤所述化学放大的光致抗蚀剂膜，以及（f）显影所述化学放大型光致抗蚀剂膜，其中使用所述化学放大的光致抗蚀剂膜的未曝光部分与水洗涤后的显影溶液的接触角，以除去光刻胶上的处理剂并在显影前进行旋转干燥比不使用所述处理剂的情况低10°〜110°。在该方法中，改善了显影液对光致抗蚀剂膜的润湿性能，并且由于处理剂中所含的有机酸等酸成分的作用，漂浮的碱性物质的影响降低，形成具有良好形状的抗蚀剂图案。

3. 发明授权

US06527966B1 Pattern forming method 有权
标题翻译：图案形成方法
公开(公告)号：US06527966B1
公开(公告)日：2003-03-04
申请号：US09445346
申请日：2000-05-01
申请人： Koji Shimomura , Yoshiaki Kinoshita , Satoru Funato , Yuko Yamaguchi
发明人： Koji Shimomura , Yoshiaki Kinoshita , Satoru Funato , Yuko Yamaguchi
IPC分类号： B44C122
CPC分类号： G03F7/0045 , G03F7/091 , H01L21/0276 , H01L21/31138 , H01L21/32137 , H01L21/32139
摘要： A method of forming a pattern in which production of reaction products in the interface between an organic anti-reflective coating and a radiation sensitive material coating is suppressed, the number of residues of an etchable layer formed after etching is decreased, and which provides a etched pattern having high resolution and good dimensional accuracy. According to the method, an etchable layer (11) composed of polysilicon coating an organic anti-reflective coating (12), and a radiation sensitive material coating (13) composed of a chemically amplified resist material containing as acid generators both (a) onium salt compound and (b) at least one of a sulfone compound and a sulfonate compound are formed on a semiconductor substrate (10), the radiation sensitive material coating (13) is imagewise exposed through the mask (14) and developed to form a patterned radiation sensitive material coating (13b). Thereafter, preferably the anti-reflective coating is etched using a mixture gas of SO2 and O2, further the etchable layer is dry-etched to form a pattern of the etchable layer.
摘要翻译：形成在有机抗反射涂层和辐射敏感材料涂层之间的界面中反应产物的产生被抑制的图案的方法，蚀刻后形成的可蚀刻层的残留数量减少，并且提供蚀刻图案具有高分辨率和良好的尺寸精度。根据该方法，由多晶硅涂覆有机抗反射涂层（12）组成的可蚀刻层（11）和由化学放大抗蚀剂材料组成的辐射敏感材料涂层（13），所述抗蚀剂材料包含（a）盐化合物和（b）在半导体衬底（10）上形成砜化合物和磺酸盐化合物中的至少一种，将辐射敏感材料涂层（13）通过掩模（14）成像曝光并显影以形成图案化辐射敏感材料涂层（13b）。此后，优选地使用SO 2和O 2的混合气体来蚀刻抗反射涂层，此外，可蚀刻的层被干蚀刻以形成可蚀刻层的图案。

4. 发明授权

US6110639A Radiation-sensitive composition and recording medium using the same 失效
标题翻译：辐射敏感组合物和使用其的记录介质
公开(公告)号：US6110639A
公开(公告)日：2000-08-29
申请号：US860451
申请日：1997-06-26
申请人： Seiya Masuda , Satoru Funato , Natsumi Kawasaki
发明人： Seiya Masuda , Satoru Funato , Natsumi Kawasaki
IPC分类号： G03F7/004 , G03F7/038
CPC分类号： G03F7/038 , G03F7/0045 , Y10S430/121
摘要： A radiation-sensitive composition comprising:an acid-generating compound capable of generating an acid upon exposure to radiation and represented by the formula (I): ##STR1## wherein X, Y and R.sup.1 to R.sup.5 have the following meanings: X and Y: independently a direct bond, C.sub.1 -C.sub.8 alkylene, C.sub.1 -C.sub.4 alkene, --O--R.sup.11 --O-- (wherein R.sup.11 is an alkylene group having 1 to 4 carbon atoms), --NH--, --O--, --S--, --SO.sub.2 --, --CO--, --COO-- or --CONR.sup.12 -- (wherein R.sup.12 is a hydrogen atom, C.sub.1 -C.sub.8 alkyl, alkylaryl, halogenated alkyl, halogenated aryl, a halogen atom, alkoxy, phenoxy, alkylsulfonyl-oxy, halogenated alkylsulfonyl-oxy, or substituted or unsubstituted arylsulfonyl-oxy);R.sup.1 to R.sup.4 : a hydrogen atom, C.sub.1 -C.sub.18 alkyl, aryl, hetero-aryl, a halogen atom, alkyl-substituted or aryl-substituted amino, alkyl-substituted or aryl-substituted amido, nitro, cyano, aldehyde, acetal, alkoxy, phenoxy, alkylsulfonyl-oxy, or substituted or unsubstituted arylsulfonyl-oxy;R.sup.5 : a hydrogen atom, alkyl, aryl, halogenated alkyl, halogenated aryl, halogenated hetero-aryl, alkylsulfonyl-oxy, halogenated alkylsulfonyl-oxy, or substituted or unsubstituted arylsulfonyl-oxy;a water-insoluble but aqueous alkaline solution-soluble binder; anda cross-linking compound capable of reacting with said binder in the presence of said acid to cause the binder to be cross-linked. Further, a radiation-sensitive recording medium can be obtained by forming a layer made of the radiation-sensitive composition on a substrate.
摘要翻译： PCT No.PCT / JP95 / 02764 Sec。 371日期：1997年6月26日 102（e）日期1997年6月26日PCT 1995年12月28日PCT PCT。出版物WO96 / 20432 日期：1996年7月4日一种辐射敏感性组合物，其包含：在暴露于辐射后能够产生酸并由式（I）表示的产酸化合物：其中X，Y和R 1至R 5具有以下含义：X和 Y：独立地是直接键合，C1-C8亚烷基，C1-C4链烯基，-O-R11-O-（其中R11是具有1-4个碳原子的亚烷基），-NH-，-O - ， - S-， -SO 2 - ， - CO - ， - COO-或-CONR 12 - （其中R 12是氢原子，C 1 -C 8烷基，烷基芳基，卤代烷基，卤代芳基，卤素原子，烷氧基，苯氧基，烷基磺酰基 - 氧基，卤代烷基磺酰基 - 氧基或取代或未取代的芳基磺酰基 - 氧基）; R1至R4：氢原子，C1-C18烷基，芳基，杂芳基，卤素原子，烷基取代或芳基取代的氨基，烷基取代或芳基取代的酰氨基，硝基，氰基，醛，缩醛，烷氧基，苯氧基，烷基磺酰基氧基或取代或未取代的芳基磺酰基 - 氧基; R5：氢原子，烷基，芳基，卤代烷基，卤代芳基，卤代杂芳基，烷基磺酰基氧基，卤代烷基磺酰基氧基或取代或未取代的芳基磺酰基氧基; 水不溶性但碱性溶液水溶性粘合剂; 和能够在所述酸存在下与所述粘合剂反应以使粘合剂交联的交联化合物。此外，通过在基板上形成由辐射敏感性组合物制成的层，可以获得辐射敏感记录介质。

5. 发明授权

US5383050A Organic nonlinear optical material 失效
标题翻译：有机非线性光学材料
公开(公告)号：US5383050A
公开(公告)日：1995-01-17
申请号：US132040
申请日：1993-10-05
申请人： Hironobu Yamamoto , Robert Johnson , Satoru Funato
发明人： Hironobu Yamamoto , Robert Johnson , Satoru Funato
IPC分类号： G02F1/35 , C07C45/81 , G02F1/355 , G02F1/361
CPC分类号： G02F1/3613 , C07C45/81 , G02F1/361 , G02F1/3611
摘要： The compounds 4-chloro-4'-hydroxybenzophenone, methyl 3,4-diaminobenzoate, N-(4-aminobenzenesulfonyl)-acetamide, methyl 4-hydroxy-3,5-dimethoxybenzoate, 2-chloro-4-cyano-6-methylaniline, 4'-hydroxy-2-phenylacetophenone and methyl 3,4-dihydroxybenzoate form high quality crystals with high melting point. They are useful for second order non-linear optical process devices such as wavelength conversion devices.
摘要翻译：化合物4-氯-4'-羟基二苯甲酮，3,4-二氨基苯甲酸甲酯，N-（4-氨基苯磺酰基） - 乙酰胺，4-羟基-3,5-二甲氧基苯甲酸甲酯，2-氯-4-氰基-6-甲基苯胺，4'-羟基-2-苯基苯乙酮和3,4-二羟基苯甲酸甲酯形成高品质的具有高熔点的晶体。它们对于诸如波长转换装置的二阶非线性光学工艺装置是有用的。

6. 发明授权

US06284427B1 Process for preparing resists 有权
标题翻译：抗蚀剂的制备方法
公开(公告)号：US06284427B1
公开(公告)日：2001-09-04
申请号：US09308582
申请日：1999-08-05
申请人： Hiroshi Okazaki , Georg Pawlowski , Satoru Funato , Yoshiaki Kinoshita , Yuko Yamaguchi
发明人： Hiroshi Okazaki , Georg Pawlowski , Satoru Funato , Yoshiaki Kinoshita , Yuko Yamaguchi
IPC分类号： G03C173
CPC分类号： G03F7/039 , C08F8/00 , C08F8/14 , C08F8/18 , C08F212/14 , C08F257/02 , C08F2800/20 , C08F2810/30 , C08L25/18 , C09D125/18 , G03F7/0045 , Y10S430/119 , C08F12/14 , C08F216/125 , C08F220/14 , C08F220/06 , C08F112/14
摘要： A resist composition is prepared by reacting an alkali-soluble polymer having a phenolic hydroxyl or carboxyl groups with a vinyl ether compound in an aprotic solvent, such as propylene glycol monomethyl ether acetate, in the presence of an acid catalyst, suspending the reaction by the addition of a base, and directly adding a photoacid generator to the reaction solution. When a dialkyl dicarbonate is used in stead of the vinyl ether compound, a resist composition is prepared by carrying out the reaction in the presence of a basic catalyst and adding a photoacid generator directly to the reaction. Thus resist compositions can be prepared without isolating or purifying an alkali-soluble polymer which has been substituted by a catalytic reaction.
摘要翻译：抗蚀剂组合物通过使酸性催化剂存在下使非酚质子溶剂如丙二醇单甲醚乙酸酯中的具有酚羟基或羧基的碱溶性聚合物与乙烯基醚化合物反应来制备，加入碱，并将光致酸产生剂直接加入到反应溶液中。当使用二碳酸二烷基酯代替乙烯基醚化合物时，通过在碱性催化剂的存在下进行反应并直接向反应中加入光致酸产生剂制备抗蚀剂组合物。因此，可以在不分离或纯化已经被催化反应取代的碱溶性聚合物的情况下制备抗蚀剂组合物。

7. 发明授权

US5846690A Radiation-sensitive composition containing plasticizer 失效
标题翻译：含增塑剂的辐射敏感组合物
公开(公告)号：US5846690A
公开(公告)日：1998-12-08
申请号：US615831
申请日：1996-03-14
申请人： Munirathna Padmanaban , Yoshiaki Kinoshita , Hiroshi Okazaki , Seiya Masuda , Natsumi Kawasaki , Satoru Funato , Georg Pawlowski
发明人： Munirathna Padmanaban , Yoshiaki Kinoshita , Hiroshi Okazaki , Seiya Masuda , Natsumi Kawasaki , Satoru Funato , Georg Pawlowski
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027 , G03F7/038 , G03F7/30
CPC分类号： G03F7/0045
摘要： A radiation-sensitive composition is disclosed which includes (a) a binder insoluble in water but soluble in or capable of being swelled in an aqueous alkali solution, (b) a dissolution inhibitor composed of (b1) a poly(N,O-acetal) having a general formula: ##STR1## wherein R.sup.3 is alkyl or substituted or unsubstituted aryl, R.sup.4 is a divalent group selected from alkylene, cycloalkylene, alkene or alkyne, R.sup.5 is alkyl, alkene, alkyne or cycloalkyl, X is --OCO--, --CO-- or --NHCO--, and p is a number not less than 1, and/or (b2) a phenol compound having a hydroxyl group which is protected by a group which can be cleaved in the presence of an acid, (c) a photosensitive compound capable of generating an acid when exposed to an active radiation, (d) a base capable of being decomposed when exposed to an active radiation to form a neutral compound derived therefrom, (e) a plasticizer, and (f) a solvent.
摘要翻译：公开了一种辐射敏感性组合物，其包括（a）不溶于水但可溶于或能够在碱性水溶液中溶胀或能够溶胀的粘合剂，（b）由（b1）聚（N，O-缩醛））具有以下通式：其中R 3是烷基或取代或未取代的芳基，R 4是选自亚烷基，亚环烷基，烯烃或炔烃的二价基团，R 5是烷基，烯烃，炔烃或环烷基，X是-OCO-， -CO-或-NHCO-，p为不小于1的数，和/或（b2）具有羟基的酚化合物，该羟基被酸可以被可被切割的基团保护，（c ）当暴露于活性辐射时能够产生酸的光敏化合物，（d）当暴露于活性辐射时能够分解以形成由其衍生的中性化合物的碱，（e）增塑剂，和（f）溶剂。

8. 发明授权

US5773191A Radiation-sensitive composition 失效
标题翻译：辐射敏感组合物
公开(公告)号：US5773191A
公开(公告)日：1998-06-30
申请号：US685850
申请日：1996-07-24
申请人： Munirathna Padmanaban , Yoshiaki Kinoshita , Satoru Funato , Natsumi Kawasaki , Hiroshi Okazaki , Georg Pawlowski
发明人： Munirathna Padmanaban , Yoshiaki Kinoshita , Satoru Funato , Natsumi Kawasaki , Hiroshi Okazaki , Georg Pawlowski
IPC分类号： G03F7/00 , G03F7/004 , G03F7/029 , G03F7/038 , G03F7/039 , H01L21/027 , G03F7/032 , G03F7/30
CPC分类号： G03F7/0045 , Y10S430/106 , Y10S430/11
摘要： A radiation-sensitive composition is disclosed which includes: (a) a copolymer represented by the general formula: ##STR1## wherein R.sup.1 is a hydrogen atom or a methyl group, R.sup.2 is a substituted or unsubstituted alkyl group or a substituted or unsubstituted aryl group, Ar is a substituted or unsubstituted phenylene group or a substituted or unsubstituted cyclohexylene group, X is a divalent group represented by --SO.sub.2 -- or --CO--, m and n are individually an integer not less than 1; (b) a dissolution inhibitor composed of a compound represented by the general formula: ##STR2## wherein R.sup.3 is an alkyl group or a substituted or unsubstituted aryl group, R.sup.4 is an alkylene group, a cycloalkylene group, an alkenylene group or an alkynylene group, R.sup.5 is an alkyl group or an cycloalkyl group, Y is --OCO--, --CO-- or --NHCO--, and p is an integer not less than 1, or (b') a cross-linking agent; (c) a photosensitive compound capable of generating an acid when exposed to a radiation; and (e) a solvent.
摘要翻译：公开了一种辐射敏感性组合物，其包括：（a）由以下通式表示的共聚物：其中R 1为氢原子或甲基，R 2为取代或未取代的烷基或取代或未取代的芳基 Ar为取代或未取代的亚苯基或取代或未取代的亚环己基，X为-SO 2 - 或-CO-表示的二价基，m和n分别为1以上的整数，（b）由以下通式表示的化合物组成的溶解抑制剂：其中R3为烷基或取代或未取代的芳基，R4为亚烷基，亚环烷基，亚烯基或亚炔基，R5是烷基或环烷基，Y是-OCO-，-CO-或-NHCO-，p是不小于1的整数，或（b'）交联剂; （c）当暴露于辐射时能够产生酸的光敏化合物; 和（e）溶剂。

9. 发明授权

US5406406A Molecular crystal and wavelength conversion devices using the same 失效
标题翻译：分子晶体和使用其的波长转换器件
公开(公告)号：US5406406A
公开(公告)日：1995-04-11
申请号：US228093
申请日：1994-04-15
申请人： Hironobu Yamamoto , Satoru Funato , Kaoru Okaniwa
发明人： Hironobu Yamamoto , Satoru Funato , Kaoru Okaniwa
IPC分类号： C07C275/38 , C30B7/00 , G02F1/35 , G02F1/355 , G02F1/361 , G02F1/37 , G02F1/377 , G02F1/383
CPC分类号： G02F1/3611 , C07C275/38 , C30B29/54 , C30B7/00 , G02F1/377 , G02F1/383
摘要： An organic molecular crystal comprising the compound N-isopropyl-N'-(4-acetylphenyl)-urea is used for preparing an optical wavelength conversion device. Especially, the device may comprise a core and a clad wherein the organic crystal is used as the core.
摘要翻译：使用包含N-异丙基-N' - （4-乙酰基苯基） - 脲化合物的有机分子晶体来制备光学波长转换装置。特别地，该器件可以包括芯和包层，其中有机晶体用作芯。

10. 发明授权

US06686121B2 Process for preparing resists 有权
标题翻译：抗蚀剂的制备方法
公开(公告)号：US06686121B2
公开(公告)日：2004-02-03
申请号：US09824198
申请日：2001-04-02
申请人： Hiroshi Okazaki , Georg Pawlowski , Satoru Funato , Yoshiaki Kinoshita , Yuko Yamaguchi
发明人： Hiroshi Okazaki , Georg Pawlowski , Satoru Funato , Yoshiaki Kinoshita , Yuko Yamaguchi
IPC分类号： G03C173
CPC分类号： G03F7/039 , C08F8/00 , C08F8/14 , C08F8/18 , C08F212/14 , C08F257/02 , C08F2800/20 , C08F2810/30 , C08L25/18 , C09D125/18 , G03F7/0045 , Y10S430/119 , C08F12/14 , C08F216/125 , C08F220/14 , C08F220/06 , C08F112/14
摘要： A resist composition is prepared by reacting an alkali-soluble polymer having a phenolic hydroxyl or carboxyl groups with a vinyl ether compound in an aprotic solvent, such as propylene glycol monomethyl ether acetate, in the presence of an acid catalyst, suspending the reaction by the addition of a base, and directly adding a photoacid generator to the reaction solution. When a dialkyl dicarbonate is used in stead of the vinyl ether compound, a resist composition is prepared by carrying out the reaction in the presence of a basic catalyst and adding a photoacid generator directly to the reaction. Thus resist compositions can be prepared without isolating or purifying an alkali-soluble polymer which has been substituted by a catalytic reaction.
摘要翻译：抗蚀剂组合物通过使酸性催化剂存在下使非酚质子溶剂如丙二醇单甲醚乙酸酯中的具有酚羟基或羧基的碱溶性聚合物与乙烯基醚化合物反应来制备，加入碱，并将光致酸产生剂直接加入到反应溶液中。当使用二碳酸二烷基酯代替乙烯基醚化合物时，通过在碱性催化剂的存在下进行反应并直接向反应中加入光致酸产生剂制备抗蚀剂组合物。因此，可以在不分离或纯化已经被催化反应取代的碱溶性聚合物的情况下制备抗蚀剂组合物。

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