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1. 发明授权

US07799513B2 Process for preventing development defect and composition for use in the same 有权
标题翻译：用于预防发展缺陷和组合物的方法
公开(公告)号：US07799513B2
公开(公告)日：2010-09-21
申请号：US10518105
申请日：2003-06-10
申请人： Yasushi Akiyama , Yusuke Takano , Kiyohisa Takahashi , Sung-Eun Hong , Tetsuo Okayasu
发明人： Yasushi Akiyama , Yusuke Takano , Kiyohisa Takahashi , Sung-Eun Hong , Tetsuo Okayasu
IPC分类号： G03F7/00
CPC分类号： G03F7/11 , G03F7/168
摘要： The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a C1 to C4 alkanolamine salt of C4 to C15 perfluoroalkylcarboxylic acid, C4 to C10 perfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed. By this process, compared with the case of not using the composition for preventing development-defects, the amount of reduction in film thickness of the photoresist subsequent to development treatment is made further bigger by 100 Å to 600 Å, and the development-defects on a substrate having a diameter of 8 inches or more is reduced as well as a resist pattern having a good cross section form can be formed without T-top form etc.
摘要翻译：（1）C4〜C15全氟烷基羧酸，C4〜C10全氟烷基磺酸和全氟己二酸的铵盐，四烷基铵盐或C1〜C4烷醇胺盐的预防显影缺陷用组合物，或（2）氟化烷基季铵无机酸的盐，其中所述表面活性剂以相对于酸与碱的比例为1:1-1:3的比例形成在直径为8英寸或更大的基材上的化学放大的光致抗蚀剂涂层上。在施加用于防止上述显影缺陷的组合物之前和/或之后烘烤化学放大的光致抗蚀剂涂层。然后，将具有显影缺陷防止组合物涂层的烘烤涂层曝光，曝光后烘烤和显影。通过该方法，与不使用用于防止显影缺陷的组合物的情况相比，显影处理后的光致抗蚀剂的膜厚减少量进一步大于100埃至600埃，并且显影缺陷在直径为8英寸以上的基板减少，并且可以形成具有良好横截面形状的抗蚀剂图案而不具有T形顶端形式等。

2. 发明申请

US20050221236A1 Process for preventing development defect and composition for use in the same 有权
标题翻译：用于预防发展缺陷和组合物的方法
公开(公告)号：US20050221236A1
公开(公告)日：2005-10-06
申请号：US10518105
申请日：2003-06-10
申请人： Yasushi Akiyama , Yusuke Takano , Kiyohisa Takahashi , Sung-Eun Hong , Tetsuo Okayasu
发明人： Yasushi Akiyama , Yusuke Takano , Kiyohisa Takahashi , Sung-Eun Hong , Tetsuo Okayasu
IPC分类号： G03F7/11 , G03F7/16 , G03F7/38 , H01L21/027 , G03F7/40
CPC分类号： G03F7/11 , G03F7/168
摘要： The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a C1 to C4 alkanolamine salt of C4 to C15 perfluoroalkylcarboxylic acid, C4 to C10 perfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed. By this process, compared with the case of not using the composition for preventing development-defects, the amount of reduction in film thickness of the photoresist subsequent to development treatment is made further bigger by 100 Å to 600 Å, and the development-defects on a substrate having a diameter of 8 inches or more is reduced as well as a resist pattern having a good cross section form can be formed without T-top form etc.
摘要翻译：用于防止含有（1）C 4的铵盐，四烷基铵盐或C 1〜C 4烷醇胺盐的显影缺陷的组合物的全氟烷基羧酸，C 4〜C 10全氟烷基磺酸和全氟己二酸，或（2）氟代烷基季铵盐无机酸，其中所述表面活性剂以相对于酸与碱的比例为1:1:1:3的比例形成在直径为8英寸或更大的基材上的化学放大的光致抗蚀剂涂层上。在施加用于防止上述显影缺陷的组合物之前和/或之后烘烤化学放大的光致抗蚀剂涂层。然后，将具有显影缺陷防止组合物涂层的烘烤涂层曝光，曝光后烘烤和显影。通过该方法，与不使用用于防止显影缺陷的组合物的情况相比，显影处理后的光致抗蚀剂的膜厚减少量进一步大于100埃至600埃，并且显影缺陷在直径为8英寸以上的基板减少，并且可以形成具有良好横截面形状的抗蚀剂图案而不具有T形顶端形式等。

3. 发明申请

US20100324330A1 Process for Preventing Development Defect and Composition for Use in the Same 审中-公开
标题翻译：防止发展缺陷和组合使用的过程
公开(公告)号：US20100324330A1
公开(公告)日：2010-12-23
申请号：US12853640
申请日：2010-08-10
申请人： Yasushi Akiyama , Yusuke Takano , Kiyohisa Takahashi , Sung-Eun Hong , Tetsuo Okayasu
发明人： Yasushi Akiyama , Yusuke Takano , Kiyohisa Takahashi , Sung-Eun Hong , Tetsuo Okayasu
IPC分类号： C07C309/02 , C07C53/21 , C07C55/14
CPC分类号： G03F7/11 , G03F7/168
摘要： The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a C1 to C4 alkanolamine salt of C4 to C15 perfluoroalkylcarboxylic acid, C4 to C10 perfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed. By this process, compared with the case of not using the composition for preventing development-defects, the amount of reduction in film thickness of the photoresist subsequent to development treatment is made further bigger by 100 Å to 600 Å, and the development-defects on a substrate having a diameter of 8 inches or more is reduced as well as a resist pattern having a good cross section form can be formed without T-top form etc.
摘要翻译：（1）C4〜C15全氟烷基羧酸，C4〜C10全氟烷基磺酸和全氟己二酸的铵盐，四烷基铵盐或C1〜C4链烷醇胺盐，或（2）氟化烷基季铵无机酸的盐，其中所述表面活性剂以相对于酸与碱的比例为1:1-1:3的比例形成在直径为8英寸或更大的基材上的化学放大的光致抗蚀剂涂层上。在施加用于防止上述显影缺陷的组合物之前和/或之后烘烤化学放大的光致抗蚀剂涂层。然后，将具有显影缺陷防止组合物涂层的烘烤涂层曝光，曝光后烘烤和显影。通过该方法，与不使用用于防止显影缺陷的组合物的情况相比，显影处理后的光致抗蚀剂的膜厚减少量进一步大于100埃至600埃，并且显影缺陷在直径为8英寸以上的基板减少，并且可以形成具有良好横截面形状的抗蚀剂图案而不具有T形顶端形式等。

4. 发明授权

US07745093B2 Water soluble resin composition and method for pattern formation using the same 有权
标题翻译：水溶性树脂组合物及其形成方法
公开(公告)号：US07745093B2
公开(公告)日：2010-06-29
申请号：US11547707
申请日：2005-04-08
申请人： Takeshi Nishibe , Sung Eun Hong , Yusuke Takano , Tetsuo Okayasu
发明人： Takeshi Nishibe , Sung Eun Hong , Yusuke Takano , Tetsuo Okayasu
IPC分类号： G03F7/40 , G03F7/11
CPC分类号： G03F7/40 , H01L21/0273 , Y10S430/106 , Y10S430/11 , Y10S430/115 , Y10S430/162 , Y10S430/165
摘要： In the present invention, in a water soluble resin composition for use in a method for pattern formation in which a covering layer is provided on a resist pattern formed of a radiation-sensitive resin composition capable of coping with ArF exposure to increase the width of the resist pattern and thus to realize effective formation of higher density trench or hole pattern, the size reduction level of the resist pattern layer can be further increased as compared with that in the prior art technique, and, in addition, the size reduction level dependency of the coarse-and-fine resist pattern can be reduced. A method for pattern formation using the water soluble resin composition is also provided. The water soluble resin composition which is usable for the method for pattern formation applicable to ArF excimer laser irradiation comprises a water soluble resin, an acid generating agent capable of generating an acid upon heating, a surfactant, a crosslinking agent, and a water-containing solvent.
摘要翻译：在本发明中，在用于图案形成方法的水溶性树脂组合物中，其中在由能够应对ArF曝光的辐射敏感性树脂组合物形成的抗蚀剂图案上设置覆盖层以增加其宽度抗蚀剂图案，从而实现有效形成更高密度的沟槽或孔图案，与现有技术相比，抗蚀剂图案层的尺寸减小水平可以进一步提高，另外，尺寸缩小级依赖性可以减少粗细和抗蚀剂图案。还提供了使用水溶性树脂组合物的图案形成方法。可用于适用于ArF准分子激光照射的图案形成方法的水溶性树脂组合物包括水溶性树脂，加热时能产生酸的酸产生剂，表面活性剂，交联剂和含水的溶剂。

5. 发明申请

US20080193880A1 Water Soluble Resin Composition and Method for Pattern Formation Using the Same 有权
标题翻译：水溶性树脂组合物及其形成方法
公开(公告)号：US20080193880A1
公开(公告)日：2008-08-14
申请号：US11547707
申请日：2005-04-08
申请人： Takeshi Nishibe , Sung Eun Hong , Yusuke Takano , Tetsuo Okayasu
发明人： Takeshi Nishibe , Sung Eun Hong , Yusuke Takano , Tetsuo Okayasu
IPC分类号： G03F7/004
CPC分类号： G03F7/40 , H01L21/0273 , Y10S430/106 , Y10S430/11 , Y10S430/115 , Y10S430/162 , Y10S430/165
摘要： In the present invention, in a water soluble resin composition for use in a method for pattern formation in which a covering layer is provided on a resist pattern formed of a radiation-sensitive resin composition capable of coping with ArF exposure to increase the width of the resist pattern and thus to realize effective formation of higher density trench or hole pattern, the size reduction level of the resist pattern layer can be further increased as compared with that in the prior art technique, and, in addition, the size reduction level dependency of the coarse-and-fine resist pattern can be reduced. A method for pattern formation using the water soluble resin composition is also provided. The water soluble resin composition which is usable for the method for pattern formation applicable to ArF excimer laser irradiation comprises a water soluble resin, an acid generating agent capable of generating an acid upon heating, a surfactant, a crosslinking agent, and a water-containing solvent.
摘要翻译：在本发明中，在用于图案形成方法的水溶性树脂组合物中，其中在由能够应对ArF曝光的辐射敏感性树脂组合物形成的抗蚀剂图案上设置覆盖层以增加其宽度抗蚀剂图案，从而实现有效形成更高密度的沟槽或孔图案，与现有技术相比，抗蚀剂图案层的尺寸减小水平可以进一步提高，另外，尺寸缩小级依赖性可以减少粗细和抗蚀剂图案。还提供了使用水溶性树脂组合物的图案形成方法。可用于适用于ArF准分子激光照射的图案形成方法的水溶性树脂组合物包括水溶性树脂，加热时能产生酸的酸产生剂，表面活性剂，交联剂和含水的溶剂。

6. 发明申请

US20100119717A1 WATER-SOLUBLE RESIN COMPOSITION FOR THE FORMATION OF MICROPATTERNS AND METHOD FOR THE FORMATION OF MICROPATTERNS WITH THE SAME 审中-公开
标题翻译：用于形成微波炉的水溶性树脂组合物及其形成微波炉的方法
公开(公告)号：US20100119717A1
公开(公告)日：2010-05-13
申请号：US12451150
申请日：2008-05-01
申请人： Sung-Eun Hong , Yusuke Takano , Wen-Bing Kang
发明人： Sung-Eun Hong , Yusuke Takano , Wen-Bing Kang
IPC分类号： B05D3/00 , C08K5/17
CPC分类号： H01L21/0271 , G03F7/40 , H01L21/3085 , H01L21/3086 , H01L21/3088
摘要： A process which comprises applying a water-soluble resin composition comprising a water-soluble vinyl resin, a compound having at least two amino groups in the molecule, a solvent, and, if necessary, an additive such as a surfactant on a resist pattern (2) formed on a substrate (1) to form a water-soluble resin film (3) , modifying part of the water-soluble resin film adjacent to the resist pattern through mixing to form a water-insolubilized layer (4) which cannot be removed by water washing on the surface of the resist pattern, and removing unmodified part of the water-soluble resin film by water washing and which enables the effective scale-down of separation size and hole opening size of a resist pattern to a level finer than the limit of resolution of the wave length of exposure. It is preferable to use as the water-soluble vinyl resin a homopolymer of a nitrogen-containing vinyl monomer such as acrylamine, vinylpyrrolidone or vinylimidazole, a copolymer of two or more nitrogen-containing vinyl monomers, or a copolymer of at least one nitrogen-containing vinyl monomer and at least one nitrogen-free vinyl monomer.
摘要翻译：一种方法，其包括将包含水溶性乙烯基树脂的水溶性树脂组合物，分子中具有至少两个氨基的化合物，溶剂和必要时在抗蚀图案上添加表面活性剂等添加剂 2）形成在基板（1）上以形成水溶性树脂膜（3），通过混合将与抗蚀剂图案相邻的水溶性树脂膜的一部分进行改性以形成不可溶的水不溶层（4）通过在抗蚀剂图案的表面上进行水洗除去，并且通过水洗除去未改性的水溶性树脂膜的部分，并且能够将抗蚀剂图案的分离尺寸和开孔尺寸有效地缩小到比曝光波长分辨率的极限。作为水溶性乙烯基树脂，优选使用丙烯酰胺，乙烯基吡咯烷酮或乙烯基咪唑等含氮乙烯基单体的均聚物，两种以上含氮乙烯基单体的共聚物，或至少一种含氮乙烯基单体的共聚物，含有乙烯基单体和至少一种无氮乙烯基单体。

7. 发明授权

US07335464B2 Water soluble resin composition, method of pattern formation and method of inspecting resist pattern 有权
标题翻译：水溶性树脂组合物，图案形成方法和抗蚀剂图案检查方法
公开(公告)号：US07335464B2
公开(公告)日：2008-02-26
申请号：US10546334
申请日：2004-02-16
申请人： Yusuke Takano , Sung-Eun Hong
发明人： Yusuke Takano , Sung-Eun Hong
IPC分类号： G03F7/039 , G03F7/40
CPC分类号： G03F7/40 , Y10S430/115 , Y10S430/165
摘要： A water-soluble resin composition of the present invention comprises at least a water-soluble resin, an acid generator capable of generating an acid by heating and a solvent containing water. The water-soluble resin composition is applied on a highly water-repellant resist pattern 3 formed by a resist such as an ArF-responsive radiation sensitive resin composition on a substrate 1 to form a coated layer 4 thereon. The resist pattern 3 and the coated layer 4 are heat-treated to form a developer-insoluble modified coated layer 5 in the vicinity of a surface of the resist pattern 3. The coated layer is developed and the resist pattern thickened by the modified layer 5 is formed. The modified layer is a layer with sufficient thickness and is able to be formed with a high dimensional controllability in a highly water-repellant resist pattern such as ArF-responsive radiation sensitive resin composition. As a result, a separation size and a hole aperture size of the resist pattern are reduced effectively to less than a limit resolution. As the modified layer 5 has a function of a protecting film for the resist pattern upon electron beam irradiation, a size measurement fluctuation of a resist pattern upon electron beam irradiation by a size measuring SEM can be prevented.
摘要翻译：本发明的水溶性树脂组合物至少包含水溶性树脂，能够通过加热产生酸的酸发生剂和含有水的溶剂。将水溶性树脂组合物涂布在由抗蚀剂如ArF响应性辐射敏感性树脂组合物形成的高度防水抗蚀剂图案3上，在基材1上形成涂层4。抗蚀剂图案3和涂层4被热处理以在抗蚀剂图案3的表面附近形成显影剂不溶性改性涂层5。显影涂层，形成由改性层5增厚的抗蚀剂图案。改性层是具有足够厚度的层，并且能够在诸如ArF响应性辐射敏感性树脂组合物的高度防水抗蚀剂图案中形成具有高尺寸可控性。结果，抗蚀剂图案的分离尺寸和孔径尺寸被有效地降低到小于限定分辨率。由于改性层5具有电子束照射时抗蚀剂图案的保护膜的功能，因此可以防止通过尺寸测量SEM的电子束照射时的抗蚀剂图案的尺寸测量波动。

8. 发明申请

US20060160015A1 Water soluble resin composition, method of pattern formation and method of inspecting resist pattern 有权
标题翻译：水溶性树脂组合物，图案形成方法和抗蚀剂图案检查方法
公开(公告)号：US20060160015A1
公开(公告)日：2006-07-20
申请号：US10546334
申请日：2004-02-16
申请人： Yusuke Takano , Sung-Eun Hong
发明人： Yusuke Takano , Sung-Eun Hong
IPC分类号： G03C1/76
CPC分类号： G03F7/40 , Y10S430/115 , Y10S430/165
摘要： A water-soluble resin composition of the present invention comprises at least a water-soluble resin, an acid generator capable of generating an acid by heating and a solvent containing water. The water-soluble resin composition is applied on a highly water-repellant resist pattern 3 formed by a resist such as an ArF-responsive radiation sensitive resin composition on a substrate 1 to form a coated layer 4 thereon. The resist pattern 3 and the coated layer 4 are heat-treated to form a developer-insoluble modified coated layer 5 in the vicinity of a surface of the resist pattern 3. The coated layer is developed and the resist pattern thickened by the modified layer 5 is formed. The modified layer is a layer with sufficient thickness and is able to be formed with a high dimensional controllability in a highly water-repellant resist pattern such as ArF-responsive radiation sensitive resin composition. As a result, a separation size and a hole aperture size of the resist pattern are reduced effectively to less than a limit resolution. As the modified layer 5 has a function of a protecting film for the resist pattern upon electron beam irradiation, a size measurement fluctuation of a resist pattern upon electron beam irradiation by a size measuring SEM can be prevented.
摘要翻译：本发明的水溶性树脂组合物至少包含水溶性树脂，能够通过加热产生酸的酸发生剂和含有水的溶剂。将水溶性树脂组合物涂布在由抗蚀剂如ArF响应性辐射敏感性树脂组合物形成的高度防水抗蚀剂图案3上，在基材1上形成涂层4。抗蚀剂图案3和涂层4被热处理以在抗蚀剂图案3的表面附近形成显影剂不溶性改性涂层5.涂层被显影，并且由改性层5增厚的抗蚀剂图案形成了。改性层是具有足够厚度的层，并且能够在诸如ArF响应性辐射敏感性树脂组合物的高度防水抗蚀剂图案中形成具有高尺寸可控性。结果，抗蚀剂图案的分离尺寸和孔径尺寸被有效地降低到小于限定分辨率。由于改性层5具有电子束照射时抗蚀剂图案的保护膜的功能，因此可以防止通过尺寸测量SEM的电子束照射时的抗蚀剂图案的尺寸测量波动。

9. 发明授权

US07399582B2 Material for forming fine pattern and method for forming fine pattern using the same 有权
标题翻译：用于形成精细图案的材料和使用其形成精细图案的方法
公开(公告)号：US07399582B2
公开(公告)日：2008-07-15
申请号：US10565113
申请日：2004-06-04
申请人： Kiyohisa Takahashi , Yusuke Takano
发明人： Kiyohisa Takahashi , Yusuke Takano
IPC分类号： G03F7/40 , H01L21/027
CPC分类号： G03F7/40
摘要： In the method wherein a resist pattern is miniaturized effectively by applying a fine pattern forming material, the fine pattern forming material used for providing with a cured coated layer pattern, wherein development defects are reduced by water development is offered, wherein the fine pattern forming material comprises a water-soluble resin, a water-soluble crosslinking agent and water or a mixed solution consisting of water and a water-soluble organic solvent, and further comprises an amine compound.
摘要翻译：在通过施加精细图案形成材料使抗蚀剂图案小型化的方法中，提供了用于提供具有固化涂层图案的精细图案形成材料，其中通过水显影减少显影缺陷，其中精细图案形成材料包括水溶性树脂，水溶性交联剂和水或由水和水溶性有机溶剂组成的混合溶液，并且还包含胺化合物。

10. 发明申请

US20080044759A1 Fine Pattern Forming Material, Method Of Forming Fine Resist Pattern And Electronic Device 审中-公开
标题翻译：精细图案形成材料，形成精细抗蚀图案和电子器件的方法
公开(公告)号：US20080044759A1
公开(公告)日：2008-02-21
申请号：US11660970
申请日：2005-08-23
申请人： Takeo Ishibashi , Kiyohisa Takahashi , Yusuke Takano
发明人： Takeo Ishibashi , Kiyohisa Takahashi , Yusuke Takano
IPC分类号： G03C1/00 , G03C5/00
CPC分类号： G03F7/40 , H01L21/0274 , H01L21/3086 , H01L21/3088
摘要： A fine pattern forming material comprising a water soluble resin of polyvinyl alcohol derivative, etc., a water soluble crosslinking agent of melamine derivative, urea derivative, etc., an amine compound, a nonionic surfactant and water or a solution of a mixture of water and water soluble organic solvent, the solution exhibiting a pH value of >7. This fine pattern forming material is applied on to resist pattern (3) to thereby form coating layer (4), and the coating layer (4) is heated and developed to thereby form crosslinked coating layer (5). The thickness of the crosslinked coating layer is increased by the use of a secondary amine compound and/or tertiary amine compound over that realized when no amine compound is added, while the thickness of the crosslinked coating layer is decreased by the use of a quaternary amine.
摘要翻译：包含聚乙烯醇衍生物的水溶性树脂等的精细图案形成材料，三聚氰胺衍生物的水溶性交联剂，脲衍生物等，胺化合物，非离子表面活性剂和水或水混合物的溶液和水溶性有机溶剂，该溶液的pH值> 7。将这种精细图案形成材料涂覆在抗蚀剂图案（3）上，从而形成涂层（4），并将涂层（4）加热显影，从而形成交联涂层（5）。通过使用仲胺化合物和/或叔胺化合物，当不添加胺化合物时，交联涂层的厚度增加，而交联涂层的厚度通过使用季胺。

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