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    • 1. 发明申请
    • Water Soluble Resin Composition and Method for Pattern Formation Using the Same
    • 水溶性树脂组合物及其形成方法
    • US20080193880A1
    • 2008-08-14
    • US11547707
    • 2005-04-08
    • Takeshi NishibeSung Eun HongYusuke TakanoTetsuo Okayasu
    • Takeshi NishibeSung Eun HongYusuke TakanoTetsuo Okayasu
    • G03F7/004
    • G03F7/40H01L21/0273Y10S430/106Y10S430/11Y10S430/115Y10S430/162Y10S430/165
    • In the present invention, in a water soluble resin composition for use in a method for pattern formation in which a covering layer is provided on a resist pattern formed of a radiation-sensitive resin composition capable of coping with ArF exposure to increase the width of the resist pattern and thus to realize effective formation of higher density trench or hole pattern, the size reduction level of the resist pattern layer can be further increased as compared with that in the prior art technique, and, in addition, the size reduction level dependency of the coarse-and-fine resist pattern can be reduced. A method for pattern formation using the water soluble resin composition is also provided. The water soluble resin composition which is usable for the method for pattern formation applicable to ArF excimer laser irradiation comprises a water soluble resin, an acid generating agent capable of generating an acid upon heating, a surfactant, a crosslinking agent, and a water-containing solvent.
    • 在本发明中,在用于图案形成方法的水溶性树脂组合物中,其中在由能够应对ArF曝光的辐射敏感性树脂组合物形成的抗蚀剂图案上设置覆盖层以增加其宽度 抗蚀剂图案,从而实现有效形成更高密度的沟槽或孔图案,与现有技术相比,抗蚀剂图案层的尺寸减小水平可以进一步提高,另外,尺寸缩小级依赖性 可以减少粗细和抗蚀剂图案。 还提供了使用水溶性树脂组合物的图案形成方法。 可用于适用于ArF准分子激光照射的图案形成方法的水溶性树脂组合物包括水溶性树脂,加热时能产生酸的酸产生剂,表面活性剂,交联剂和含水的 溶剂。
    • 3. 发明授权
    • Water soluble resin composition and method for pattern formation using the same
    • 水溶性树脂组合物及其形成方法
    • US07745093B2
    • 2010-06-29
    • US11547707
    • 2005-04-08
    • Takeshi NishibeSung Eun HongYusuke TakanoTetsuo Okayasu
    • Takeshi NishibeSung Eun HongYusuke TakanoTetsuo Okayasu
    • G03F7/40G03F7/11
    • G03F7/40H01L21/0273Y10S430/106Y10S430/11Y10S430/115Y10S430/162Y10S430/165
    • In the present invention, in a water soluble resin composition for use in a method for pattern formation in which a covering layer is provided on a resist pattern formed of a radiation-sensitive resin composition capable of coping with ArF exposure to increase the width of the resist pattern and thus to realize effective formation of higher density trench or hole pattern, the size reduction level of the resist pattern layer can be further increased as compared with that in the prior art technique, and, in addition, the size reduction level dependency of the coarse-and-fine resist pattern can be reduced. A method for pattern formation using the water soluble resin composition is also provided. The water soluble resin composition which is usable for the method for pattern formation applicable to ArF excimer laser irradiation comprises a water soluble resin, an acid generating agent capable of generating an acid upon heating, a surfactant, a crosslinking agent, and a water-containing solvent.
    • 在本发明中,在用于图案形成方法的水溶性树脂组合物中,其中在由能够应对ArF曝光的辐射敏感性树脂组合物形成的抗蚀剂图案上设置覆盖层以增加其宽度 抗蚀剂图案,从而实现有效形成更高密度的沟槽或孔图案,与现有技术相比,抗蚀剂图案层的尺寸减小水平可以进一步提高,另外,尺寸缩小级依赖性 可以减少粗细和抗蚀剂图案。 还提供了使用水溶性树脂组合物的图案形成方法。 可用于适用于ArF准分子激光照射的图案形成方法的水溶性树脂组合物包括水溶性树脂,加热时能产生酸的酸产生剂,表面活性剂,交联剂和含水的 溶剂。