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1. 发明授权

US07195863B2 Development defect preventing process and material 有权
标题翻译：开发缺陷预防过程和材料
公开(公告)号：US07195863B2
公开(公告)日：2007-03-27
申请号：US10311787
申请日：2001-06-14
申请人： Yusuke Takano , Kazuyo Ijima , Satoru Funato , Yoshio Murakami , Hatsuyuki Tanaka
发明人： Yusuke Takano , Kazuyo Ijima , Satoru Funato , Yoshio Murakami , Hatsuyuki Tanaka
IPC分类号： G03F7/30 , G03F7/38
CPC分类号： G03F7/322 , G03F7/0048 , G03F7/0382 , G03F7/0392 , G03F7/11 , G03F7/168 , H01L21/0274
摘要： A composition for reducing development defects comprising an acidic composition containing, for example, a surfactant applied onto a chemically amplified photoresist coating formed on a substrate having a diameter of 8 inches or more. By this process, the surface of the resist is rendered hydrophilic and the formation of slightly soluble layer in a developer on the surface of the resist is prevented. In addition, by proper diffusion amount of acid from the composition for reducing development defects, the amount of reduction in thickness of the chemically amplified photoresist coating after development is increased by 10 Å to 500 Å in comparison with the case of not applying the composition for reducing development defects to form a resist pattern not having a deteriorated pattern profile such as T-top or round top.
摘要翻译：一种用于减少显影缺陷的组合物，其包含含有例如施加到直径为8英寸或更大的基底上形成的化学放大光致抗蚀剂涂层上的表面活性剂的酸性组合物。通过该工艺，抗蚀剂的表面变得亲水，并且防止在抗蚀剂表面上的显影剂中形成微溶层。此外，通过适当扩散量的用于减少显影缺陷的组合物的酸，与未将组合物不相适应的情况相比，显影后化学放大光致抗蚀剂涂层的厚度减少量增加了10埃至500埃减少显影缺陷以形成不具有劣化图案轮廓的抗蚀剂图案，例如T顶或圆顶。

2. 发明授权

US07018785B2 Method for forming pattern and treating agent for use therein 有权
标题翻译：用于形成图案和处理剂的方法
公开(公告)号：US07018785B2
公开(公告)日：2006-03-28
申请号：US10416412
申请日：2001-10-24
申请人： Kazuyo Ono , Yusuke Takano , Hatsuyuki Tanaka , Satoru Funato
发明人： Kazuyo Ono , Yusuke Takano , Hatsuyuki Tanaka , Satoru Funato
IPC分类号： G03F7/00
CPC分类号： G03F7/0382 , G03F7/0392 , G03F7/168
摘要： A method of forming resist patterns comprises the steps of (a) applying and forming a chemically amplified photoresist film, (b) applying a treating agent with a pH value of 1.3 to 4.5 onto said chemically amplified photoresist film, (c) baking said chemically amplified photoresist film after at least one of the steps of applying and forming said chemically amplified photoresist film and applying said treating agent, (d) selectively exposing said chemically amplified photoresist film, (e) post exposure-baking said chemically amplified photoresist film, and (f) developing said chemically amplified photoresist film, wherein the contact angle of a non-exposed portion of said chemically amplified photoresist film to a developing solution after wash with water to remove the treating agent on the photoresist and spin-drying before development is made lower by 10° to 110° than that in the case where said treating agent is not applied. In this method, the wetting property of the developing solution to the photoresist film are improved and the influence of floating basic species are reduced by the action of an acid component such as organic acid contained in the treating agent to form resist patterns with good shape.
摘要翻译：形成抗蚀剂图案的方法包括以下步骤：（a）施加和形成化学放大的光致抗蚀剂膜，（b）将pH值为1.3至4.5的处理剂施加到所述化学放大的光致抗蚀剂膜上，（c）在施加和形成所述化学放大光致抗蚀剂膜并施加所述处理剂的步骤中的至少一个步骤之后，（d）选择性地暴露所述化学放大的光致抗蚀剂膜，（e）曝光后曝光烘烤所述化学放大的光致抗蚀剂膜，以及（f）显影所述化学放大型光致抗蚀剂膜，其中使用所述化学放大的光致抗蚀剂膜的未曝光部分与水洗涤后的显影溶液的接触角，以除去光刻胶上的处理剂并在显影前进行旋转干燥比不使用所述处理剂的情况低10°〜110°。在该方法中，改善了显影液对光致抗蚀剂膜的润湿性能，并且由于处理剂中所含的有机酸等酸成分的作用，漂浮的碱性物质的影响降低，形成具有良好形状的抗蚀剂图案。

3. 发明授权

US06309789B1 Composition for reflection reducing coating 有权
标题翻译：防反射涂层用组合物
公开(公告)号：US06309789B1
公开(公告)日：2001-10-30
申请号：US09485087
申请日：2000-05-25
申请人： Yusuke Takano , Hatsuyuki Tanaka , Kiyofumi Takano , Yutaka Hashimoto
发明人： Yusuke Takano , Hatsuyuki Tanaka , Kiyofumi Takano , Yutaka Hashimoto
IPC分类号： G03F7004
CPC分类号： C09D5/00 , G03F7/091
摘要： The anti-reflective coating composition comprising at least perfluoroalkylsulfonic acid (A) represented by the general formula: CnF2n+1SO3H (n is an integer of 4 to 8), organic amine (B), water-soluble polymer (C), perfluoroalkyl sulfonamide (D) represented by the general formula: CnF2n+1SO2NH2 (n is an integer of 1 to 8) and water (E) and having a pH value of 1.3 to 3.3 is applied onto a photoresist film formed on a substrate, thus forming an anti-reflective coating. The photoresist and anti-reflective coating are then exposed to light and developed to give a resist pattern. The coating composition can form a uniform anti-reflective coating free of standing wave, multiple reflection, T-top and PED (Post Exposure Delay) in a small amount of drip onto any types of resists regardless of the surface shape of a substrate.
摘要翻译：所述抗反射涂料组合物至少包含由以下通式表示的全氟烷基磺酸（A）：CnF2n + 1SO3H（n为4〜8的整数），有机胺（B），水溶性聚合物（C），全氟烷基磺酰胺（D）由CnF2n + 1SO2NH2（n为1〜8的整数）和水（E）表示，pH值为1.3〜3.3的物质涂布到形成在基板上的光致抗蚀剂膜上，形成防反射涂层。然后将光致抗蚀剂和抗反射涂层曝光并显影以得到抗蚀剂图案。涂料组合物可以形成均匀的抗反射涂层，无需驻留波，多重反射，T顶和PED（Post Exposure Delay），少量滴落到任何类型的抗蚀剂上，而不管基材的表面形状如何。

4. 发明授权

US06692892B1 Composition for antireflection coating 失效
标题翻译：抗反射涂层用组合物
公开(公告)号：US06692892B1
公开(公告)日：2004-02-17
申请号：US09889184
申请日：2001-07-10
申请人： Yusuke Takano , Hatsuyuki Tanaka , Dong Han Lee
发明人： Yusuke Takano , Hatsuyuki Tanaka , Dong Han Lee
IPC分类号： G03F700
CPC分类号： G03F7/091 , Y10S430/151
摘要： A resist pattern having a good form without any T-top or round top is obtained by coating on a photoresist layer an anti-reflective coating composition containing at least (a) polyacrylic acid, (b) polyvinyl pyrrolidone, (c) CnF2n+1COOOH (wherein n represents an integer of 3 to 11) and (d) tetramethylammonium hydroxide to form an anti-reflective coating, and conducting patternwise exposure and development.
摘要翻译：通过在光致抗蚀剂层上涂覆至少包含（a）聚丙烯酸，（b）聚乙烯吡咯烷酮，（c）CnF 2 n + 1COOOH（a）聚丙烯酸的抗反射涂料组合物，得到具有没有任何T顶或圆顶的良好形式的抗蚀剂图案（其中n表示3至11的整数）和（d）四甲基氢氧化铵以形成抗反射涂层，并进行图案曝光和显影。

5. 发明授权

US08568955B2 Composition for formation of top antireflective film, and pattern formation method using the composition 有权
标题翻译：用于形成顶部抗反射膜的组合物和使用该组合物的图案形成方法
公开(公告)号：US08568955B2
公开(公告)日：2013-10-29
申请号：US12747652
申请日：2008-12-10
申请人： Yasushi Akiyama , Go Noya , Katsutoshi Kuramoto , Yusuke Takano
发明人： Yasushi Akiyama , Go Noya , Katsutoshi Kuramoto , Yusuke Takano
IPC分类号： G11B7/24 , C04B24/22
CPC分类号： G03F7/091 , G03F7/0046
摘要： Disclosed is a composition for forming a top antireflective film, which comprises at least one fluorine-containing compound and a quaternary ammonium compound represented by the formula (1) [wherein at least one of R1, R2, R3, and R4 represents a hydroxyl group or an alkanol group, and the others independently represent a hydrogen or an alkyl group having 1 to 10 carbon atoms; and X− represents a hydroxyl group, a halide ion or a sulfate ion], and optionally a water-soluble polymer, an acid, a surfactant and an aqueous solvent. The composition for forming a top antireflective film can exhibit the same levels of functions as those of conventional top antireflective film-forming compositions when applied in a smaller amount.
摘要翻译：公开了一种用于形成顶部抗反射膜的组合物，其包含至少一种含氟化合物和由式（1）表示的季铵化合物[其中R 1，R 2，R 3和R 4中的至少一个表示羟基或链烷醇基，其余独立地表示氢或碳原子数1〜10的烷基。和X-表示羟基，卤离子或硫酸根离子]，以及任选的水溶性聚合物，酸，表面活性剂和水性溶剂。用于形成顶部抗反射膜的组合物可以表现出与常规顶部抗反射成膜组合物相同程度的功能，当以较小的量使用时。

6. 发明授权

US08501394B2 Superfine-patterned mask, method for production thereof, and method employing the same for forming superfine-pattern 有权
标题翻译：超细图形掩模，其制造方法以及使用该掩模形成超细图案的方法
公开(公告)号：US08501394B2
公开(公告)日：2013-08-06
申请号：US12864529
申请日：2009-01-27
申请人： Yusuke Takano , Jin Li , Tomonori Ishikawa , Go Noya
发明人： Yusuke Takano , Jin Li , Tomonori Ishikawa , Go Noya
IPC分类号： G03F7/26
CPC分类号： H01L21/0337 , C09D183/14 , C09D183/16 , G03F7/40 , H01L21/0274 , H01L21/0338 , H01L21/31144 , Y10T428/24479
摘要： There is provided a method for forming a superfine pattern, which can simply produce a superfine pattern with high mass productivity.The method comprises the steps of forming a first convex pattern, on a film to be treated, forming a spacer formed of a silazane-containing resin composition on the side wall of the convexes constituting the first convex pattern, and forming a superfine pattern using as a mask the spacer or a resin layer disposed around the spacer. The spacer is formed by curing an evenly coated resin composition only in its part around the first convex pattern. According to this method for pattern formation, unlike the conventional method, a superfine pattern can be formed.
摘要翻译：提供了一种形成超细图案的方法，其可以简单地产生具有高质量生产率的超细图案。该方法包括以下步骤：在待处理的膜上形成第一凸起图案，在构成第一凸起图案的凸起的侧壁上形成由含硅氮烷的树脂组合物形成的间隔物，并使用如下方式形成超细图案掩模隔离物或设置在间隔物周围的树脂层。间隔物通过仅在其第一凸起图案周围的部分固化均匀涂覆的树脂组合物而形成。根据这种图案形成方法，与传统方法不同，可以形成超细纹图案。

7. 发明申请

US20120160801A1 Superfine Pattern Mask, Method for Production Thereof, and Method Employing the Same for forming Superfine Pattern 有权
标题翻译：超细纹图案面膜，其制造方法以及使用其形成超细纹图案的方法
公开(公告)号：US20120160801A1
公开(公告)日：2012-06-28
申请号：US12978740
申请日：2010-12-27
申请人： Munirathna Padmanaban , Jin Li , Toru Koike , Yusuke Takano , Kazunori Kurosawa
发明人： Munirathna Padmanaban , Jin Li , Toru Koike , Yusuke Takano , Kazunori Kurosawa
IPC分类号： B05D5/02 , C08L83/06
CPC分类号： C09D183/16 , C08G77/12 , C08G77/62 , G03F7/405 , H01L21/0337 , H01L21/0338 , C08L83/00
摘要： There are provided a composition for forming a superfine pattern and a method employing the same for forming a superfine pattern. The composition enables to simply produce a superfine pattern with high mass productivity.The composition comprises perhydropolysilazane (I), silicon-containing polymer (II) having a hydrocarbon group, and a solvent. The mixture of those polymers contains silicon-hydrogen bonds and silicon-hydrocarbon group bonds in such amounts that the number of the silicon-hydrocarbon group bonds is in a ratio of 1 to 44% based on the total number of the silicon-hydrogen bonds and the silicon-hydrocarbon group bonds. The composition is applied on a resist pattern to form a spacer formed of the composition on the side wall of the ridges in the pattern, and then the spacer or a resin layer disposed around the spacer is used as a mask to form a superfine pattern.
摘要翻译：提供了用于形成超细纹图案的组合物和使用该组合物形成超细纹图案的方法。该组合物能够简单地产生具有高批量生产率的超细纹理。组合物包含全氢聚硅氮烷（I），具有烃基的含硅聚合物（II）和溶剂。这些聚合物的混合物含有硅 - 氢键和硅 - 烃基键，其量使得硅 - 烃基键的数量相对于硅 - 氢键的总数为1〜44％，硅烃基键合。将该组合物施加在抗蚀剂图案上以在图案的脊的侧壁上形成由该组合物形成的间隔物，然后将间隔物或设置在间隔物周围的树脂层用作掩模以形成超细纹图案。

8. 发明申请

US20100308015A1 SUPERFINE-PATTERNED MASK, METHOD FOR PRODUCTION THEREOF, AND METHOD EMPLOYING THE SAME FOR FORMING SUPERFINE-PATTERN 有权
标题翻译：超级图案掩模，其生产方法和使用其形成超级图案的方法
公开(公告)号：US20100308015A1
公开(公告)日：2010-12-09
申请号：US12864529
申请日：2009-01-27
申请人： Yusuke Takano , Jin Li , Tomonori Ishikawa , Go Noya
发明人： Yusuke Takano , Jin Li , Tomonori Ishikawa , Go Noya
IPC分类号： C23F1/00 , B32B3/30 , B05D3/10
CPC分类号： H01L21/0337 , C09D183/14 , C09D183/16 , G03F7/40 , H01L21/0274 , H01L21/0338 , H01L21/31144 , Y10T428/24479
摘要： There is provided a method for forming a superfine pattern, which can simply produce a superfine pattern with high mass productivity.The method comprises the steps of forming a first convex pattern, on a film to be treated, forming a spacer formed of a silazane-containing resin composition on the side wall of the convexes constituting the first convex pattern, and forming a superfine pattern using as a mask the spacer or a resin layer disposed around the spacer. The spacer is formed by curing an evenly coated resin composition only in its part around the first convex pattern. According to this method for pattern formation, unlike the conventional method, a superfine pattern can be formed.
摘要翻译：提供了一种形成超细图案的方法，其可以简单地产生具有高质量生产率的超细图案。该方法包括以下步骤：在待处理的膜上形成第一凸起图案，在构成第一凸起图案的凸起的侧壁上形成由含硅氮烷的树脂组合物形成的间隔物，并使用如下方式形成超细图案掩模隔离物或设置在间隔物周围的树脂层。间隔物通过仅在其第一凸起图案周围的部分固化均匀涂覆的树脂组合物而形成。根据这种图案形成方法，与传统方法不同，可以形成超细纹图案。

9. 发明授权

US07399582B2 Material for forming fine pattern and method for forming fine pattern using the same 有权
标题翻译：用于形成精细图案的材料和使用其形成精细图案的方法
公开(公告)号：US07399582B2
公开(公告)日：2008-07-15
申请号：US10565113
申请日：2004-06-04
申请人： Kiyohisa Takahashi , Yusuke Takano
发明人： Kiyohisa Takahashi , Yusuke Takano
IPC分类号： G03F7/40 , H01L21/027
CPC分类号： G03F7/40
摘要： In the method wherein a resist pattern is miniaturized effectively by applying a fine pattern forming material, the fine pattern forming material used for providing with a cured coated layer pattern, wherein development defects are reduced by water development is offered, wherein the fine pattern forming material comprises a water-soluble resin, a water-soluble crosslinking agent and water or a mixed solution consisting of water and a water-soluble organic solvent, and further comprises an amine compound.
摘要翻译：在通过施加精细图案形成材料使抗蚀剂图案小型化的方法中，提供了用于提供具有固化涂层图案的精细图案形成材料，其中通过水显影减少显影缺陷，其中精细图案形成材料包括水溶性树脂，水溶性交联剂和水或由水和水溶性有机溶剂组成的混合溶液，并且还包含胺化合物。

10. 发明申请

US20080044759A1 Fine Pattern Forming Material, Method Of Forming Fine Resist Pattern And Electronic Device 审中-公开
标题翻译：精细图案形成材料，形成精细抗蚀图案和电子器件的方法
公开(公告)号：US20080044759A1
公开(公告)日：2008-02-21
申请号：US11660970
申请日：2005-08-23
申请人： Takeo Ishibashi , Kiyohisa Takahashi , Yusuke Takano
发明人： Takeo Ishibashi , Kiyohisa Takahashi , Yusuke Takano
IPC分类号： G03C1/00 , G03C5/00
CPC分类号： G03F7/40 , H01L21/0274 , H01L21/3086 , H01L21/3088
摘要： A fine pattern forming material comprising a water soluble resin of polyvinyl alcohol derivative, etc., a water soluble crosslinking agent of melamine derivative, urea derivative, etc., an amine compound, a nonionic surfactant and water or a solution of a mixture of water and water soluble organic solvent, the solution exhibiting a pH value of >7. This fine pattern forming material is applied on to resist pattern (3) to thereby form coating layer (4), and the coating layer (4) is heated and developed to thereby form crosslinked coating layer (5). The thickness of the crosslinked coating layer is increased by the use of a secondary amine compound and/or tertiary amine compound over that realized when no amine compound is added, while the thickness of the crosslinked coating layer is decreased by the use of a quaternary amine.
摘要翻译：包含聚乙烯醇衍生物的水溶性树脂等的精细图案形成材料，三聚氰胺衍生物的水溶性交联剂，脲衍生物等，胺化合物，非离子表面活性剂和水或水混合物的溶液和水溶性有机溶剂，该溶液的pH值> 7。将这种精细图案形成材料涂覆在抗蚀剂图案（3）上，从而形成涂层（4），并将涂层（4）加热显影，从而形成交联涂层（5）。通过使用仲胺化合物和/或叔胺化合物，当不添加胺化合物时，交联涂层的厚度增加，而交联涂层的厚度通过使用季胺。

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