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1. 发明授权

US07141177B2 Etching method and composition for forming etching protective layer 有权
标题翻译：用于形成蚀刻保护层的蚀刻方法和组合物
公开(公告)号：US07141177B2
公开(公告)日：2006-11-28
申请号：US10487658
申请日：2002-09-04
申请人： Hatsuyuki Tanaka
发明人： Hatsuyuki Tanaka
IPC分类号： B44C1/22
CPC分类号： H01L21/32139 , G03F7/40 , H01L21/0274 , H01L21/3081 , H01L21/31144
摘要： This invention offers a method to improve-etching resistance of etching mask upon etching comprising steps of forming a pattern on a substrate by using photoresist, applying a composition for forming an etching protection layer containing water-soluble or water-dispersible resin, crosslinking agent and water and/or water-soluble organic solvent as a solvent, forming etching protection layer which is insoluble in a developer containing water in the interface between a composition for forming an etching protection layer and a photoresist by heating, removing by a developer unnecessary area excluding etching protection layer made of a composition for forming an etching protection layer, and treating a substrate by etching using photoresist pattern as a mask.
摘要翻译：本发明提供了一种提高蚀刻掩模在蚀刻时的耐蚀性的方法，包括以下步骤：通过使用光致抗蚀剂在基片上形成图案，施加用于形成含有水溶性或水分散性树脂的蚀刻保护层的组合物，交联剂和水和/或水溶性有机溶剂作为溶剂，在加热下形成蚀刻保护层的组合物和光刻胶之间的界面中形成不溶于含水显影剂的蚀刻保护层，除去由显影剂排出的不需要的区域由用于形成蚀刻保护层的组合物制成的蚀刻保护层，以及使用光致抗蚀剂图案作为掩模的蚀刻来处理基板。

2. 发明授权

US06329126B1 Developer solution for acitinic ray sensitive resist 失效
标题翻译：用于acitinic光敏抗蚀剂的显影剂溶液
公开(公告)号：US06329126B1
公开(公告)日：2001-12-11
申请号：US08339340
申请日：1994-11-14
申请人： Hatsuyuki Tanaka , Mitsuru Sato , Toshimasa Nakayama , Hiroshi Komano
发明人： Hatsuyuki Tanaka , Mitsuru Sato , Toshimasa Nakayama , Hiroshi Komano
IPC分类号： G03F732
CPC分类号： G03F7/322
摘要： Disclosed is a novel aqueous developer solution used in the development treatment of an actinic ray-sensitive resist for the manufacture of, for example, semiconductor devices, which is capable of giving a patterned resist layer free from the troubles of film residue or scum deposition in any finest patterning. The developer solution contains, in addition to a nitrogen-containing organic basic compound, e.g., tetramethyl ammonium hydroxide, dissolved in an aqueous medium as the solvent, an anionic surface active agent which is a diphenyl ether compound having at least one ammonium sulfonate group, such as an ammonium alkyl diphenylether sulfonate, in a concentration of 0.05 to 5% by weight.
摘要翻译：公开了一种用于显影处理用于制造例如半导体器件的光化抗敏抗蚀剂的新型水性显影剂溶液，其能够提供没有膜残留物或浮渣沉积问题的图案化抗蚀剂层任何最好的图案。除了溶解在作为溶剂的水性介质中的含氮有机碱性化合物例如四甲基氢氧化铵之外，显影剂溶液还含有具有至少一个磺酸铵基团的二苯基醚化合物的阴离子表面活性剂，例如烷基二苯基醚磺酸铵，其浓度为0.05-5重量％。

3. 发明授权

US5543268A Developer solution for actinic ray-sensitive resist 失效
标题翻译：用于光化射线敏感抗蚀剂的显影剂溶液
公开(公告)号：US5543268A
公开(公告)日：1996-08-06
申请号：US231877
申请日：1994-04-22
申请人： Hatsuyuki Tanaka , Mitsuru Sato , Toshimasa Nakayama , Hiroshi Komano
发明人： Hatsuyuki Tanaka , Mitsuru Sato , Toshimasa Nakayama , Hiroshi Komano
IPC分类号： G03F7/32
CPC分类号： G03F7/322
摘要： Disclosed is a novel aqueous developer solution used in the development treatment of an actinic ray-sensitive resist for the manufacture of, for example, semiconductor devices, which is capable of giving a patterned resist layer free from the troubles of film residue or scum deposition in any finest patterning. The developer solution contains, in addition to a nitrogen-containing organic basic compound, e.g., tetramethyl ammonium hydroxide, dissolved in an aqueous medium as the solvent, an anionic surface active agent which is a diphenyl ether compound having at least one ammonium sulfonate group, such as an ammonium alkyl diphenylether sulfonate, in a concentration of 0.05 to 5% by weight.
摘要翻译：公开了一种用于显影处理用于制造例如半导体器件的光化抗敏抗蚀剂的新型水性显影剂溶液，其能够提供没有膜残留物或浮渣沉积问题的图案化抗蚀剂层任何最好的图案。除了溶解在作为溶剂的水性介质中的含氮有机碱性化合物例如四甲基氢氧化铵之外，显影剂溶液还含有具有至少一个磺酸铵基团的二苯基醚化合物的阴离子表面活性剂，例如烷基二苯基醚磺酸铵，其浓度为0.05-5重量％。

4. 发明授权

US4882260A Positive-working photosensitive quinone diazide composition with alkali insoluble dye and alkali soluble dye 失效
标题翻译：正色光敏醌二叠氮化合物与碱不溶性染料和碱溶性染料
公开(公告)号：US4882260A
公开(公告)日：1989-11-21
申请号：US059556
申请日：1987-06-05
申请人： Hidekatsu Kohara , Nobuo Tokutake , Masanori Miyabe , Toshimasa Nakayama , Shingo Asaumi , Hatsuyuki Tanaka , Yoshiaki Arai
发明人： Hidekatsu Kohara , Nobuo Tokutake , Masanori Miyabe , Toshimasa Nakayama , Shingo Asaumi , Hatsuyuki Tanaka , Yoshiaki Arai
IPC分类号： G03C1/00 , C09D161/08 , G03C1/72 , G03F7/004 , G03F7/022 , G03F7/025 , G03F7/04 , G03F7/09 , H01L21/027 , H01L21/30
CPC分类号： G03F7/091
摘要： The photosensitive composition, which is suitable as a photoresist material in fine patterning works for the manufacture of semiconductor devices, contains, as a photoextinctive agent, a combination of an alkali-insoluble dye and an alkali-soluble dye each having absorptivity of light in the wavelength region from 230 to 500 nm in a specified amount and in a specified ratio between them. By virtue of the formulation of combined dyes, the undesirable phenomenon of halation by the underlying aluminum coating layer on the substrate surface is greatly decreased so that patterned resist layer obtained with the composition is a high-fidelity reproduction of the original pattern even in a submicron range of fineness with good rectangularity of the cross sectional form of the patterned lines.
摘要翻译：在制造半导体器件的精细图案化中适合作为光致抗蚀剂材料的光敏组合物包含作为光敏剂的碱不溶性染料和碱溶性染料的组合，其中每种具有光吸收性的染料波长范围为230〜500nm，以规定的量和它们之间的规定比例。由于组合染料的配制，基板表面上的下面的铝涂层的不期望的卤化现象大大降低，使得用该组合物获得的图案化抗蚀剂层即使在亚微米中也是原始图案的高保真再现图案线的横截面形状的良好矩形度的细度范围。

5. 发明授权

US4833067A Developing solution for positive-working photoresist comprising tmah and non-ionic surfactant 失效
标题翻译：用于正工作光致抗蚀剂的显影溶液包含tmah和非离子表面活性剂
公开(公告)号：US4833067A
公开(公告)日：1989-05-23
申请号：US246930
申请日：1988-09-19
申请人： Hatsuyuki Tanaka , Hidekatsu Kohara , Yoshiyuki Sato , Shingo Asaumi , Toshimasa Nakayama , Akira Yokota , Hisashi Nakane
发明人： Hatsuyuki Tanaka , Hidekatsu Kohara , Yoshiyuki Sato , Shingo Asaumi , Toshimasa Nakayama , Akira Yokota , Hisashi Nakane
IPC分类号： G03C1/72 , G03C5/18 , G03F7/30 , G03F7/32 , H01L21/027 , H01L21/30
CPC分类号： G03F7/322 , G03C5/18
摘要： The aqueous developing solution of the invention for positive-working photoresist compositions contains, in addition to an organic basic compound free from metallic ions, such as tetramethyl ammonium hydroxide and choline, as the principal ingredient, from 50 to 5000 ppm of an acetylene alcohol. In comparison with conventional developing solutions, the inventive developing solution is advantageous in the uniformity of the patterned photoresist layer, higher sensitivity and smaller temperature dependency of development and less drawbacks due to foaming of the solution.
摘要翻译：本发明的正性光致抗蚀剂组合物的水性显影液除了含有金属离子的有机碱性化合物外，还含有氢氧化四甲基铵和胆碱作为主要成分，为50-5000ppm的乙炔醇。与传统的显影液相比，本发明的显影溶液在图案化光刻胶层的均匀性方面是有利的，更高的灵敏度和更小的显影温度依赖性以及由于溶液的发泡而引起的缺点。

6. 发明授权

US4824762A Method for rinse treatment of a substrate 失效
标题翻译：冲洗处理基材的方法
公开(公告)号：US4824762A
公开(公告)日：1989-04-25
申请号：US67313
申请日：1987-06-26
申请人： Masakazu Kobayashi , Shingo Asaumi , Hatsuyuki Tanaka
发明人： Masakazu Kobayashi , Shingo Asaumi , Hatsuyuki Tanaka
IPC分类号： H01L21/30 , G03C11/00 , G03F7/00 , G03F7/26 , G03F7/42 , H01L21/027 , H01L21/461 , G03C11/12 , G03C5/00
CPC分类号： G03F7/425
摘要： The improvement of the invention consists in the use of a specific ether compound, e.g., diethyleneglycol monomethyl, monoethyl and monobutyl ethers, dipropyleneglycol monomethyl and monoethyl ethers, triethyleneglycol monomethyl and monoethyl ethers and tripropyleneglycol monomethyl ether, as a rinse solvent for a substrate from which the pattern photoresist layer has been removed with a remover solution in the photolithographic processing of semiconductor devices. The rinse solvent is free from the problems in the toxicity to human body and environment pollution relative to waste disposal as well as the danger of fire. The rinse solvent is versatile to be applicable to both of the negative- and positive-working photoresist compositions. Further advantages are obtained by adding an aliphatic amine compound to the rinse solvent.
摘要翻译：本发明的改进在于使用特定的醚化合物，例如二甘醇单甲基，单乙基和单丁基醚，二丙二醇单甲基和单乙基醚，三乙二醇单甲基和单乙基醚和三丙二醇单甲醚作为底物的漂洗溶剂，在半导体器件的光刻处理中，用去除剂溶液除去图案光致抗蚀剂层。冲洗溶剂没有相对于废物处理对人体的毒性和环境污染的问题以及火灾的危险。漂洗溶剂是通用的，适用于负性和正性光致抗蚀剂组合物。通过向漂洗溶剂中加入脂族胺化合物可获得进一步的优点。

7. 发明授权

US07195863B2 Development defect preventing process and material 有权
标题翻译：开发缺陷预防过程和材料
公开(公告)号：US07195863B2
公开(公告)日：2007-03-27
申请号：US10311787
申请日：2001-06-14
申请人： Yusuke Takano , Kazuyo Ijima , Satoru Funato , Yoshio Murakami , Hatsuyuki Tanaka
发明人： Yusuke Takano , Kazuyo Ijima , Satoru Funato , Yoshio Murakami , Hatsuyuki Tanaka
IPC分类号： G03F7/30 , G03F7/38
CPC分类号： G03F7/322 , G03F7/0048 , G03F7/0382 , G03F7/0392 , G03F7/11 , G03F7/168 , H01L21/0274
摘要： A composition for reducing development defects comprising an acidic composition containing, for example, a surfactant applied onto a chemically amplified photoresist coating formed on a substrate having a diameter of 8 inches or more. By this process, the surface of the resist is rendered hydrophilic and the formation of slightly soluble layer in a developer on the surface of the resist is prevented. In addition, by proper diffusion amount of acid from the composition for reducing development defects, the amount of reduction in thickness of the chemically amplified photoresist coating after development is increased by 10 Å to 500 Å in comparison with the case of not applying the composition for reducing development defects to form a resist pattern not having a deteriorated pattern profile such as T-top or round top.
摘要翻译：一种用于减少显影缺陷的组合物，其包含含有例如施加到直径为8英寸或更大的基底上形成的化学放大光致抗蚀剂涂层上的表面活性剂的酸性组合物。通过该工艺，抗蚀剂的表面变得亲水，并且防止在抗蚀剂表面上的显影剂中形成微溶层。此外，通过适当扩散量的用于减少显影缺陷的组合物的酸，与未将组合物不相适应的情况相比，显影后化学放大光致抗蚀剂涂层的厚度减少量增加了10埃至500埃减少显影缺陷以形成不具有劣化图案轮廓的抗蚀剂图案，例如T顶或圆顶。

8. 发明授权

US07018785B2 Method for forming pattern and treating agent for use therein 有权
标题翻译：用于形成图案和处理剂的方法
公开(公告)号：US07018785B2
公开(公告)日：2006-03-28
申请号：US10416412
申请日：2001-10-24
申请人： Kazuyo Ono , Yusuke Takano , Hatsuyuki Tanaka , Satoru Funato
发明人： Kazuyo Ono , Yusuke Takano , Hatsuyuki Tanaka , Satoru Funato
IPC分类号： G03F7/00
CPC分类号： G03F7/0382 , G03F7/0392 , G03F7/168
摘要： A method of forming resist patterns comprises the steps of (a) applying and forming a chemically amplified photoresist film, (b) applying a treating agent with a pH value of 1.3 to 4.5 onto said chemically amplified photoresist film, (c) baking said chemically amplified photoresist film after at least one of the steps of applying and forming said chemically amplified photoresist film and applying said treating agent, (d) selectively exposing said chemically amplified photoresist film, (e) post exposure-baking said chemically amplified photoresist film, and (f) developing said chemically amplified photoresist film, wherein the contact angle of a non-exposed portion of said chemically amplified photoresist film to a developing solution after wash with water to remove the treating agent on the photoresist and spin-drying before development is made lower by 10° to 110° than that in the case where said treating agent is not applied. In this method, the wetting property of the developing solution to the photoresist film are improved and the influence of floating basic species are reduced by the action of an acid component such as organic acid contained in the treating agent to form resist patterns with good shape.
摘要翻译：形成抗蚀剂图案的方法包括以下步骤：（a）施加和形成化学放大的光致抗蚀剂膜，（b）将pH值为1.3至4.5的处理剂施加到所述化学放大的光致抗蚀剂膜上，（c）在施加和形成所述化学放大光致抗蚀剂膜并施加所述处理剂的步骤中的至少一个步骤之后，（d）选择性地暴露所述化学放大的光致抗蚀剂膜，（e）曝光后曝光烘烤所述化学放大的光致抗蚀剂膜，以及（f）显影所述化学放大型光致抗蚀剂膜，其中使用所述化学放大的光致抗蚀剂膜的未曝光部分与水洗涤后的显影溶液的接触角，以除去光刻胶上的处理剂并在显影前进行旋转干燥比不使用所述处理剂的情况低10°〜110°。在该方法中，改善了显影液对光致抗蚀剂膜的润湿性能，并且由于处理剂中所含的有机酸等酸成分的作用，漂浮的碱性物质的影响降低，形成具有良好形状的抗蚀剂图案。

9. 发明授权

US5985525A Developer solution for photoresist composition 失效
标题翻译：光致抗蚀剂组合物的显影剂溶液
公开(公告)号：US5985525A
公开(公告)日：1999-11-16
申请号：US127640
申请日：1993-09-28
申请人： Mitsuru Sato , Hatsuyuki Tanaka , Toshimasa Nakayama
发明人： Mitsuru Sato , Hatsuyuki Tanaka , Toshimasa Nakayama
IPC分类号： G03F7/32 , H01L21/027 , H01L21/30 , G03C5/00
CPC分类号： G03F7/322
摘要： Proposed is an aqueous developer solution for an alkali-developable photoresist composition which contains, besides a water-soluble organic basic compound such as tetramethyl ammonium hydroxide and an anionic or non-ionic surface active agent as conventional ingredients in the prior art developwer solutions, an inorganic ammonium salt such as ammonium sulfate, ammonium phosphates and ammonium borates in a limited amount. By virtue of this unique additive, the developer solution is advantageous in respect of the absence of any scums on the patterned resist layer obtained by the development treatment therewith as well as quite good orthogonality in the cross sectional profile of line-patterned resist layer in addition to the greatly improved latitude in the light exposure dose and range of focusing depth in the light-exposure process of the resist layer with ultraviolet light.
摘要翻译：提出了一种用于碱显影光致抗蚀剂组合物的水性显影剂溶液，其除了水溶性有机碱性化合物如四甲基氢氧化铵和阴离子或非离子表面活性剂外，还含有现有技术的开发溶液中的常规成分，无机铵盐如硫酸铵，磷酸铵和硼酸铵。由于这种独特的添加剂，显影剂溶液在通过其显影处理获得的图案化抗蚀剂层上不存在任何浮渣以及线图案化抗蚀剂层的横截面轮廓中的相当好的正交性方面是有利的在抗紫外线的光曝光过程中的曝光剂量和聚焦深度的范围大大提高。

10. 发明授权

US5662961A Method for forming a protective coating film on electronic parts and devices 失效
标题翻译：在电子零件和装置上形成保护涂膜的方法
公开(公告)号：US5662961A
公开(公告)日：1997-09-02
申请号：US616378
申请日：1996-03-15
申请人： Katsuya Tanitsu , Atsushi Kawakami , Hatsuyuki Tanaka , Toshimasa Nakayama
发明人： Katsuya Tanitsu , Atsushi Kawakami , Hatsuyuki Tanaka , Toshimasa Nakayama
IPC分类号： B05D5/00 , C03C17/00 , C03C17/30 , C09D183/02 , C09D183/06 , G02F1/1333 , B05D3/02
CPC分类号： G02F1/133345 , B05D5/00 , C03C17/009 , C03C17/30 , C09D183/02 , C09D183/06 , Y10T428/1045
摘要： Proposed is a novel method for the formation of a protective coating film having a pencil hardness of up to 9 H on the surface of various substrates or, in particular, electronic parts such as color filters and liquid crystal display panels. The method comprises: coating the surface with a liquid coating composition of which the principal ingredient is a partial cohydrolysis-condensation product of a tetraalkoxy silane, e.g., tetraethoxy silane, and a functional alkoxy silane, e.g., 3-methacryloxypropyl trimethoxy silane, and drying and heating the coating layer to effect complete curing. The hardness of the cured protective film can be increased by admixing the liquid coating composition with a finely divided inorganic filler such as a colloidal silica. It is optional that the functional alkoxy silane is subjected to the cohydrolysis reaction after it is polymerized alone or after it is copolymerized with a polyfunctional acrylic monomer.
摘要翻译：提出了在各种基板的表面上形成铅笔硬度高达9H的保护涂膜的新颖方法，特别是电子部件如滤色器和液晶显示面板。该方法包括：用液体涂料组合物涂覆表面，其中主要成分是四烷氧基硅烷（例如四乙氧基硅烷）和官能的烷氧基硅烷（例如3-甲基丙烯酰氧基丙基三甲氧基硅烷）的部分共水解缩合产物和干燥并加热涂层以完成固化。固化保护膜的硬度可以通过将液体涂料组合物与细碎的无机填料如胶体二氧化硅混合来提高。功能性烷氧基硅烷在单独聚合或与多官能丙烯酸单体共聚后，可进行共水解反应是可选的。

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