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1. 发明申请

US20070099417A1 Adhesion and minimizing oxidation on electroless CO alloy films for integration with low K inter-metal dielectric and etch stop 审中-公开
标题翻译：粘附和最小化无电解CO合金膜上的氧化，用于与低K金属间电介质和蚀刻停止集成
公开(公告)号：US20070099417A1
公开(公告)日：2007-05-03
申请号：US11329785
申请日：2006-01-10
申请人： Hongbin Fang , Timothy Weidman , Fang Mei , Yaxin Wang , Arulkumar Shanmugasundram , Christopher Bencher , Mehul Naik
发明人： Hongbin Fang , Timothy Weidman , Fang Mei , Yaxin Wang , Arulkumar Shanmugasundram , Christopher Bencher , Mehul Naik
IPC分类号： H01L21/469
CPC分类号： H01L21/76843 , H01L21/76829 , H01L21/76846 , H01L21/76849 , H01L21/76862 , H01L21/76864
摘要： A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on the substrate, reducing oxide formation on the capping layer, and then depositing a dielectric material. A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on a substrate, exposing the capping layer to a plasma, heating the substrate to more than about 100° C., and depositing a low dielectric constant material.
摘要翻译：一种用于处理半导体衬底的方法和装置，包括在形成在衬底上的导电材料上沉积覆盖层，减少覆盖层上的氧化物形成，然后沉积电介质材料。一种用于处理半导体衬底的方法和装置，包括在形成在衬底上的导电材料上沉积覆盖层，将覆盖层暴露于等离子体，将衬底加热到大于约100℃，以及沉积低介电常数材料。

2. 发明授权

US07910476B2 Adhesion and minimizing oxidation on electroless CO alloy films for integration with low K inter-metal dielectric and etch stop 失效
标题翻译：粘附和最小化无电解CO合金膜上的氧化，用于与低K金属间电介质和蚀刻停止集成
公开(公告)号：US07910476B2
公开(公告)日：2011-03-22
申请号：US12240744
申请日：2008-09-29
申请人： Hongbin Fang , Timothy Weidman , Fang Mei , Yaxin Wang , Arulkumar Shanmugasundram , Christopher D. Bencher , Mehul B. Naik
发明人： Hongbin Fang , Timothy Weidman , Fang Mei , Yaxin Wang , Arulkumar Shanmugasundram , Christopher D. Bencher , Mehul B. Naik
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/76829 , H01L21/76846 , H01L21/76849 , H01L21/76862 , H01L21/76864
摘要： A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on the substrate, reducing oxide formation on the capping layer, and then depositing a dielectric material. A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on a substrate, exposing the capping layer to a plasma, heating the substrate to more than about 100° C., and depositing a low dielectric constant material.
摘要翻译：一种用于处理半导体衬底的方法和装置，包括在形成在衬底上的导电材料上沉积覆盖层，减少覆盖层上的氧化物形成，然后沉积电介质材料。一种用于处理半导体衬底的方法和装置，包括在形成在衬底上的导电材料上沉积覆盖层，将覆盖层暴露于等离子体，将衬底加热到大于约100℃，以及沉积低介电常数材料。

3. 发明申请

US20090029544A1 ADHESION AND MINIMIZING OXIDATION ON ELECTROLESS CO ALLOY FILMS FOR INTEGRATION WITH LOW K INTER-METAL DIELECTRIC AND ETCH STOP 失效
标题翻译：用于与低K金属介电和蚀刻停止集成的电解CO合金膜上的粘合和最小化氧化
公开(公告)号：US20090029544A1
公开(公告)日：2009-01-29
申请号：US12240744
申请日：2008-09-29
申请人： Hongbin Fang , Timothy Weidman , Fang Mei , Yaxin Wang , Arulkumar Shanmugasundram , Christopher D. Bencher , Mehul B. Naik
发明人： Hongbin Fang , Timothy Weidman , Fang Mei , Yaxin Wang , Arulkumar Shanmugasundram , Christopher D. Bencher , Mehul B. Naik
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/76829 , H01L21/76846 , H01L21/76849 , H01L21/76862 , H01L21/76864
摘要： A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on the substrate, reducing oxide formation on the capping layer, and then depositing a dielectric material. A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on a substrate, exposing the capping layer to a plasma, heating the substrate to more than about 100° C., and depositing a low dielectric constant material.
摘要翻译：一种用于处理半导体衬底的方法和装置，包括在形成在衬底上的导电材料上沉积覆盖层，减少覆盖层上的氧化物形成，然后沉积电介质材料。一种用于处理半导体衬底的方法和装置，包括在形成在衬底上的导电材料上沉积覆盖层，将覆盖层暴露于等离子体，将衬底加热到大于约100℃，以及沉积低介电常数材料。

4. 发明申请

US20080024762A1 RAMAN SPECTROSCOPY AS INTEGRATED CHEMICAL METROLOGY 失效
标题翻译：拉曼光谱作为一体化学计量学
公开(公告)号：US20080024762A1
公开(公告)日：2008-01-31
申请号：US11830202
申请日：2007-07-30
申请人： HONGBIN FANG , Josh Golden , Timothy Weidman , Yaxin Wang , Arulkumar Shanmugasundram
发明人： HONGBIN FANG , Josh Golden , Timothy Weidman , Yaxin Wang , Arulkumar Shanmugasundram
IPC分类号： G01N21/00
CPC分类号： G01N21/65
摘要： A method for measuring the concentration of the metal solution and reducing agent solution within the electroless plating solution is disclosed. Raman spectroscopy is used to measure the concentration of each solution within the electroless plating solution after they have been mixed together. By measuring the concentration of each solution prior to providing the solution to a plating cell, the concentration of the individual solutions can be adjusted so that the targeted concentration of each solution is achieved. Additionally, each solution can be individually analyzed using Raman spectroscopy prior to mixing with the other solutions. Based upon the Raman spectroscopy measurements of the individual solutions prior to mixing, the individual components that make up each solution can be adjusted prior to mixing so that the targeted component concentration can be achieved.
摘要翻译：公开了一种用于测量化学镀溶液中的金属溶液和还原剂溶液的浓度的方法。拉曼光谱法用于测量化学镀溶液混合在一起后每种溶液的浓度。通过在将溶液提供给电镀池之前测量每种溶液的浓度，可以调节各溶液的浓度，从而实现每种溶液的目标浓度。此外，每个溶液可以在与其他溶液混合之前使用拉曼光谱单独分析。基于混合前单个溶液的拉曼光谱测量，可以在混合之前调整组成每种溶液的各个组分，从而可以实现目标组分浓度。

5. 发明授权

US07542132B2 Raman spectroscopy as integrated chemical metrology 失效
标题翻译：拉曼光谱作为综合化学计量学
公开(公告)号：US07542132B2
公开(公告)日：2009-06-02
申请号：US11830202
申请日：2007-07-30
申请人： Hongbin Fang , Josh Golden , Timothy W. Weidman , Yaxin Wang , Arulkumar Shanmugasundram
发明人： Hongbin Fang , Josh Golden , Timothy W. Weidman , Yaxin Wang , Arulkumar Shanmugasundram
IPC分类号： G01J3/44 , G01N21/65
CPC分类号： G01N21/65
摘要： A method for measuring the concentration of the metal solution and reducing agent solution within the electroless plating solution is disclosed. Raman spectroscopy is used to measure the concentration of each solution within the electroless plating solution after they have been mixed together. By measuring the concentration of each solution prior to providing the solution to a plating cell, the concentration of the individual solutions can be adjusted so that the targeted concentration of each solution is achieved. Additionally, each solution can be individually analyzed using Raman spectroscopy prior to mixing with the other solutions. Based upon the Raman spectroscopy measurements of the individual solutions prior to mixing, the individual components that make up each solution can be adjusted prior to mixing so that the targeted component concentration can be achieved.
摘要翻译：公开了一种用于测量化学镀溶液中的金属溶液和还原剂溶液的浓度的方法。拉曼光谱法用于测量化学镀溶液混合在一起后每种溶液的浓度。通过在将溶液提供给电镀池之前测量每种溶液的浓度，可以调节各溶液的浓度，从而实现每种溶液的目标浓度。此外，每个溶液可以在与其他溶液混合之前使用拉曼光谱单独分析。基于混合前单个溶液的拉曼光谱测量，可以在混合之前调整组成每种溶液的各个组分，从而可以实现目标组分浓度。

6. 发明申请

US20070111519A1 INTEGRATED ELECTROLESS DEPOSITION SYSTEM 审中-公开
标题翻译：集成电沉积系统
公开(公告)号：US20070111519A1
公开(公告)日：2007-05-17
申请号：US11428230
申请日：2006-06-30
申请人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Allen D'Ambra , Timothy Weidman , Michael Stewart , Eugene Rabinovich , Svetlana Sherman , Manoocher Birang , Yaxin Wang , Michael Yang , Bradley Hansen
发明人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Allen D'Ambra , Timothy Weidman , Michael Stewart , Eugene Rabinovich , Svetlana Sherman , Manoocher Birang , Yaxin Wang , Michael Yang , Bradley Hansen
IPC分类号： H01L21/44
CPC分类号： H01L21/288 , C23C18/1619 , C23C18/1653 , C23C18/168 , C23C18/1682 , C23C18/1685 , C23C18/1689 , C25D7/123 , C25D17/001 , H01L21/02063 , H01L21/02068 , H01L21/02087 , H01L21/28518 , H01L21/28562 , H01L21/67051 , H01L21/6719 , H01L21/6723 , H01L21/67751 , H01L21/68785 , H01L21/76814 , H01L21/76843 , H01L21/76856 , H01L21/76873 , H01L21/76874
摘要： Embodiments of the invention provide methods for depositing a material onto a surface of a substrate by using one or more electroless, electrochemical plating, CVD and/or ALD processes. Embodiments of the invention provide a method for depositing a seed layer on a substrate with an electroless process and to subsequently fill interconnect features on the substrate with an ECP process on a single substrate processing platform. Other aspects provide a method for depositing a seed layer on a substrate, fill interconnect features on a substrate, or sequentially deposit both a seed layer and fill interconnect features on the substrate. One embodiment provides a method for forming a capping layer over substrate interconnects. Methods include the use of a vapor dryer for pre- and post-deposition cleaning of substrates as well as a brush box chamber for post-deposition cleaning.
摘要翻译：本发明的实施方案提供了通过使用一种或多种化学镀，CVD和/或ALD工艺将材料沉积到衬底的表面上的方法。本发明的实施方案提供了一种用于在基板上沉积种子层的方法，该方法具有无电解方法，并随后在单个基板处理平台上用ECP工艺填充基板上的互连特征。其它方面提供了一种用于在衬底上沉积种子层的方法，在衬底上填充互连特征，或者在衬底上顺序地沉积种子层和填充互连特征。一个实施例提供了一种在衬底互连上形成覆盖层的方法。方法包括使用蒸气干燥器进行基板的沉积前和沉积后清洁以及用于后沉积清洁的刷盒室。

7. 发明申请

US20060033678A1 Integrated electroless deposition system 审中-公开
标题翻译：集成无电沉积系统
公开(公告)号：US20060033678A1
公开(公告)日：2006-02-16
申请号：US11192993
申请日：2005-07-29
申请人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Allen D'Ambra , Timothy Weidman , Eugene Rabinovich , Svetlana Sherman , Manoocher Birang , Yaxin Wang , Michael Yang , Bradley Hansen
发明人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Allen D'Ambra , Timothy Weidman , Eugene Rabinovich , Svetlana Sherman , Manoocher Birang , Yaxin Wang , Michael Yang , Bradley Hansen
IPC分类号： G09G3/00 , H05H1/24 , C23C16/00
CPC分类号： H01L21/67167 , C23C16/06 , C23C16/34 , C23C16/4488 , C23C18/1632 , C23C18/1653 , H01L21/28556 , H01L21/288 , H01L21/6719 , H01L21/67207 , H01L21/6723 , H01L21/67742 , H01L21/67745 , H01L21/76843 , H01L21/76873 , H01L21/76877
摘要： Embodiments of the invention provide a cluster tool configured to deposit a material onto a substrate surface by using one or more electroless, electrochemical plating, CVD and/or ALD processing chambers. In one aspect, a ruthenium-containing catalytic layer is formed. Embodiments of the invention provide a hybrid deposition system configured to deposit a seed layer on a substrate with an electroless process and to subsequently fill interconnect features on the substrate with an ECP cell. Other aspects provide an electroless deposition system configured to deposit a seed layer on a substrate, fill interconnect features on a substrate, or sequentially deposit both a seed layer and fill interconnect features on the substrate. One embodiment provides an electroless deposition system configured to form a capping layer over substrate interconnects. The system includes a vapor dryer for pre- and post-deposition cleaning of substrates as well as a brush box chamber for post-deposition cleaning.
摘要翻译：本发明的实施例提供了一种集群工具，其被配置为通过使用一个或多个化学镀，CVD和/或ALD处理室将材料沉积到衬底表面上。一方面，形成含钌催化剂层。本发明的实施例提供了一种混合沉积系统，其被配置为利用无电解方法将种子层沉积在衬底上，并随后用ECP单元填充衬底上的互连特征。其它方面提供一种无电镀沉积系统，其被配置为将衬底层沉积在衬底上，填充衬底上的互连特征，或者顺序地沉积衬底上的晶种层和填充互连特征。一个实施例提供了一种配置成在衬底互连上形成覆盖层的无电沉积系统。该系统包括蒸发干燥器，用于底物的沉积前和沉积后清洁以及用于后沉积清洁的刷盒室。

8. 发明申请

US20070095367A1 Apparatus and method for atomic layer cleaning and polishing 审中-公开
标题翻译：用于原子层清洁和抛光的装置和方法
公开(公告)号：US20070095367A1
公开(公告)日：2007-05-03
申请号：US11262445
申请日：2005-10-28
申请人： Yaxin Wang , Fang Mei , Van Nguyen , Arulkumar Shanmugasundram , Dmitry Lubomirsky
发明人： Yaxin Wang , Fang Mei , Van Nguyen , Arulkumar Shanmugasundram , Dmitry Lubomirsky
IPC分类号： B08B7/04 , B08B3/00 , B08B7/00
CPC分类号： H01L21/67046
摘要： The present invention generally provides an apparatus and method of processing substrates to uniformly remove any residual contamination from the surface of a substrate by use of an appropriate cleaning chemistry and contact with a cleaning medium. In one embodiment, the cleaning medium, such as is a brush or a scrubbing component that is positioned in a cleaning module. In one embodiment, the process of cleaning the surface of a substrate W is completed by “scrubbing” the surface of the substrate while using a cleaning solution that is selected to chemically etch a material from the surface of the substrate. In one aspect, the amount of material removed from the surface of a substrate is only about 10-30 Angstroms (Å). In one embodiment, the substrate surface is cleaned by use of a scrubbing process that uses a fluid that doesn't react with the exposed materials on the surface of the substrate. The fluid is thus used to lubricate the surfaces in contact and to carry any abraded material away from the surface of the substrate. In one aspect, the fluid may be DI water. In one aspect, it may be desirable to add ultrasonic or megasonic agitation to the substrate during the cleaning process to help remove or dislodge material from the surface of the substrate.
摘要翻译：本发明总体上提供了一种加工基材的装置和方法，以通过使用适当的清洁化学品和与清洁介质的接触来均匀地除去基材表面的任何残余污染物。在一个实施例中，清洁介质，例如位于清洁模块中的刷子或擦洗部件。在一个实施例中，清洁衬底W的表面的过程通过“擦洗”衬底的表面而完成，同时使用选择用于从衬底的表面化学蚀刻材料的清洁溶液。在一个方面，从衬底的表面去除的材料的量仅为约10-30埃（）。在一个实施例中，通过使用使用不与衬底表面上暴露的材料反应的流体的洗涤过程来清洁衬底表面。因此，流体用于润滑接触表面并将任何磨损的材料携带离开基底的表面。在一个方面，流体可以是去离子水。在一个方面，可能期望在清洁过程中向基底添加超声波或兆声波搅拌以帮助从衬底的表面移除或移除材料。

9. 发明授权

US06511923B1 Deposition of stable dielectric films 失效
标题翻译：沉积稳定的介电膜
公开(公告)号：US06511923B1
公开(公告)日：2003-01-28
申请号：US09574404
申请日：2000-05-19
申请人： Yaxin Wang , Michael Barnes , Thanh N. Pham , Farhad Moghadam
发明人： Yaxin Wang , Michael Barnes , Thanh N. Pham , Farhad Moghadam
IPC分类号： H01L2131
CPC分类号： H01L21/31053 , H01L21/31629
摘要： A composite insulating film including three layers is formed on a substrate having a gap. The first layer partially fills the gap and contains a dielectric material having a low dielectric constant, such as halogen-doped silicate glass. The second layer is formed over the first layer, and contains an undoped dielectric material such as silicon oxide, nitride, or oxynitride. The second layer is more stable and integrable, and less susceptible to moisture absorption and outgassing, than the first layer. The second layer is substantially smaller in thickness than the first layer, and at least substantially fills the gap. The third layer is formed over the second layer, and contains a dielectric material having a low dielectric constant, such as halogen-doped silicate glass. In a specific embodiment, the first layer is formed by plasma-enhanced chemical vapor deposition in which reactive species are generated from a process gas mixture by plasma for sputtering the first layer.
摘要翻译：在具有间隙的基板上形成包括三层的复合绝缘膜。第一层部分地填充间隙并且包含具有低介电常数的介电材料，例如掺杂卤素的硅酸盐玻璃。第二层形成在第一层上，并且包含未掺杂的介电材料，例如氧化硅，氮化物或氧氮化物。第二层比第一层更稳定和可整合，较不易吸潮和脱气。第二层的厚度明显小于第一层，并且至少基本上填充间隙。第三层形成在第二层上，并且包含具有低介电常数的电介质材料，例如卤素掺杂的硅酸盐玻璃。在具体实施例中，第一层通过等离子体增强化学气相沉积形成，其中通过等离子体从工艺气体混合物产生反应性物质以溅射第一层。

10. 发明授权

US07473655B2 Method for silicon based dielectric chemical vapor deposition 有权
标题翻译：硅基电介质化学气相沉积方法
公开(公告)号：US07473655B2
公开(公告)日：2009-01-06
申请号：US11155646
申请日：2005-06-17
申请人： Yaxin Wang , Yuji Maeda , Thomas C. Mele , Sean M. Seutter , Sanjeev Tandon , R. Suryanarayanan Iyer
发明人： Yaxin Wang , Yuji Maeda , Thomas C. Mele , Sean M. Seutter , Sanjeev Tandon , R. Suryanarayanan Iyer
IPC分类号： H01L21/31
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/45525 , C23C16/45553 , H01L29/6656 , H01L29/6659 , H01L29/66628 , H01L29/7834
摘要： Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH3)3—N.
摘要翻译：本发明的实施方案通常提供一种沉积含硅膜的方法。在一个实施例中，将含硅材料膜沉积在基板上的方法包括将含氮和碳的化学品流入沉积室，将含有硅 - 氮键的含硅源化学品流入处理室，并加热基板置于室内至低于约550摄氏度的温度。在另一个实施方案中，含硅化学品是三甲基胺，含氮和碳的化学品是（CH 3）3 -N。

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