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1. 发明申请

US20050150454A1 Deposition chamber and method for depositing low dielectric constant films 有权
标题翻译：沉积室和沉积低介电常数膜的方法
公开(公告)号：US20050150454A1
公开(公告)日：2005-07-14
申请号：US10997311
申请日：2004-11-23
申请人： Shijian Li , Yaxin Wang , Fred Redeker , Tetsuya Ishikawa , Alan Collins
发明人： Shijian Li , Yaxin Wang , Fred Redeker , Tetsuya Ishikawa , Alan Collins
IPC分类号： C23C16/44 , C23C14/34 , C23C16/40 , C23C16/455 , H01L21/205 , H01L21/31 , C23C16/00
CPC分类号： C23C16/45574 , C23C16/401 , C23C16/45512 , C23C16/45514 , C23C16/45576 , H01J37/3244
摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.
摘要翻译：改进的沉积室（2）包括限定容纳衬底支撑件（14）的腔室（18）的壳体（4）。氧和SiF 4的混合物通过一组第一喷嘴（34）输送，并且硅烷通过一组第二喷嘴（34a）被输送到周围（40）的腔室内底物支撑。将硅烷（或硅烷和SiF 4 Si的混合物）和氧分别从孔口（64,76）中心地注入到基底上方的腔室中。气体的均匀分散与每种气体的最佳流速相结合，导致薄膜均匀低（低于3.4）的介电常数。

2. 发明授权

US07413627B2 Deposition chamber and method for depositing low dielectric constant films 有权
标题翻译：沉积室和沉积低介电常数膜的方法
公开(公告)号：US07413627B2
公开(公告)日：2008-08-19
申请号：US10997311
申请日：2004-11-23
申请人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
发明人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
IPC分类号： H01L21/3065 , C23C16/455 , C23C16/505
CPC分类号： C23C16/45574 , C23C16/401 , C23C16/45512 , C23C16/45514 , C23C16/45576 , H01J37/3244
摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.
摘要翻译：改进的沉积室（2）包括限定容纳衬底支撑件（14）的腔室（18）的壳体（4）。氧和SiF 4的混合物通过一组第一喷嘴（34）输送，并且硅烷通过一组第二喷嘴（34a）被输送到周围（40）的腔室内底物支撑。将硅烷（或硅烷和SiF 4 Si的混合物）和氧分别从孔口（64,76）中心地注入到基底上方的腔室中。气体的均匀分散与每种气体的最佳流速相结合，导致薄膜均匀低（低于3.4）的介电常数。

3. 发明授权

US06833052B2 Deposition chamber and method for depositing low dielectric constant films 失效
标题翻译：沉积室和沉积低介电常数膜的方法
公开(公告)号：US06833052B2
公开(公告)日：2004-12-21
申请号：US10283565
申请日：2002-10-29
申请人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
发明人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
IPC分类号： C23F1600
CPC分类号： C23C16/45574 , C23C16/401 , C23C16/45512 , C23C16/45514 , C23C16/45576 , H01J37/3244
摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.
摘要翻译：改进的沉积室（2）包括限定容纳衬底支撑件（14）的腔室（18）的壳体（4）。氧和SiF 4的混合物通过一组第一喷嘴（34）输送，并且硅烷通过一组第二喷嘴（34a）输送到围绕衬底支撑件的周边（40）的腔室中。将硅烷（或硅烷和SiF 4的混合物）和氧分别从孔口（64,76）中心地注入到基底上方的腔室中。气体的均匀分散与每种气体的最佳流速相结合，导致薄膜均匀低（低于3.4）的介电常数。

4. 发明授权

US06589610B2 Deposition chamber and method for depositing low dielectric constant films 失效
公开(公告)号：US06589610B2
公开(公告)日：2003-07-08
申请号：US10174453
申请日：2002-06-17
申请人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
发明人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
IPC分类号： C23C16455
CPC分类号： C23C16/45574 , C23C16/401 , C23C16/45512 , C23C16/45514 , C23C16/45576 , H01J37/3244
摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.

5. 发明授权

US06416823B2 Deposition chamber and method for depositing low dielectric constant films 有权
公开(公告)号：US06416823B2
公开(公告)日：2002-07-09
申请号：US09515574
申请日：2000-02-29
申请人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
发明人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
IPC分类号： C23L16455
CPC分类号： C23C16/45574 , C23C16/401 , C23C16/45512 , C23C16/45514 , C23C16/45576 , H01J37/3244
摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.

6. 发明授权

US6070551A Deposition chamber and method for depositing low dielectric constant films 失效
公开(公告)号：US6070551A
公开(公告)日：2000-06-06
申请号：US851856
申请日：1997-05-06
申请人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
发明人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
IPC分类号： C23C16/44 , C23C14/34 , C23C16/40 , C23C16/455 , H01L21/205 , H01L21/31 , C23C16/00
CPC分类号： C23C16/45574 , C23C16/401 , C23C16/45512 , C23C16/45514 , C23C16/45576 , H01J37/3244
摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF.sub.4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF.sub.4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.

7. 发明申请

US20110143553A1 INTEGRATED TOOL SETS AND PROCESS TO KEEP SUBSTRATE SURFACE WET DURING PLATING AND CLEAN IN FABRICATION OF ADVANCED NANO-ELECTRONIC DEVICES 审中-公开
标题翻译：综合工具集和工艺在高级纳米电子设备制造过程中保护基底表面湿润清洗和清洁
公开(公告)号：US20110143553A1
公开(公告)日：2011-06-16
申请号：US12965765
申请日：2010-12-10
申请人： Yaxin Wang , Shijian Li , Fritz Redeker , John Parks , Artur Kolics , Hyungsuk Alexander Yoon , Tarek Suwwan de Felipe , Mikhail Korolik
发明人： Yaxin Wang , Shijian Li , Fritz Redeker , John Parks , Artur Kolics , Hyungsuk Alexander Yoon , Tarek Suwwan de Felipe , Mikhail Korolik
IPC分类号： H01L21/469 , B05C3/02 , B05C11/00 , B05C11/02
CPC分类号： H01L21/288 , C23C18/1642 , C23C18/1689 , C23C18/1872 , H01L21/76849
摘要： Methods and systems for handling a substrate through processes including an integrated electroless deposition process includes processing a surface of the substrate in an electroless deposition module to deposit a layer over conductive features of the substrate using a deposition fluid. The surface of the substrate is then rinsed in the electroless deposition module with a rinsing fluid. The rinsing is controlled to prevent de-wetting of the surface so that a transfer film defined from the rinsing fluid remains coated over the surface of the substrate. The substrate is removed from the electroless deposition module while maintaining the transfer film over the surface of the substrate. The transfer film over the surface of the substrate prevents drying of the surface of the substrate so that the removing is wet. The substrate, once removed from the electroless deposition module, is moved into a post-deposition module while maintaining the transfer film over the surface of the substrate.
摘要翻译：用于通过包括集成无电沉积工艺的工艺处理衬底的方法和系统包括在无电沉积模块中处理衬底的表面以使用沉积流体在衬底的导电特征上沉积层。然后用清洗液在无电沉积模块中冲洗基材的表面。控制冲洗以防止表面的脱湿，使得从冲洗流体限定的转印膜保持涂覆在基材的表面上。将基底从无电沉积模块移除，同时将转印膜保持在衬底的表面上。衬底表面上的转印膜防止了衬底表面的干燥，使得去除被弄湿。一旦从无电镀沉积模块中取出的衬底被移动到后沉积模块中，同时将转印膜保持在衬底的表面上。

8. 发明授权

US06814814B2 Cleaning residues from surfaces in a chamber by sputtering sacrificial substrates 失效
标题翻译：通过溅射牺牲衬底清洁室内表面的残留物
公开(公告)号：US06814814B2
公开(公告)日：2004-11-09
申请号：US10109736
申请日：2002-03-29
申请人： Alan W. Collins , Feng Gao , Tetsuya Ishikawa , Padmanaban Krishnaraj , Yaxin Wang
发明人： Alan W. Collins , Feng Gao , Tetsuya Ishikawa , Padmanaban Krishnaraj , Yaxin Wang
IPC分类号： B08B312
CPC分类号： H01J37/32862 , B08B7/00 , C23C14/564 , C23C16/4405 , Y10S438/905 , Y10S438/906
摘要： In a method of cleaning process residues formed on surfaces in a substrate processing chamber, a sacrificial substrate comprising a sacrificial material is placed in the chamber, a sputtering gas is introduced into the chamber, and the sputtering gas is energized to sputter the sacrificial material from the substrate. The sputtered sacrificial material reacts with residues on the chamber surfaces to clean them. In one version, the sacrificial substrate comprises a silicon-containing material that when sputtered deposits silicon on the chamber walls that reacts with and cleans fluorine-containing species that are left behind by a chamber cleaning process.
摘要翻译：在清洗在基板处理室的表面上形成的工艺残留物的方法中，将包括牺牲材料的牺牲基板放置在室中，将溅射气体引入室中，并且将溅射气体通电以将牺牲材料从底物。溅射的牺牲材料与室表面上的残留物反应以清洁它们。在一个版本中，牺牲衬底包括含硅材料，当溅射时，在室壁上沉积硅，其通过室清洁过程与留下的含氟物质反应并清除含氟物质。

9. 发明授权

US06383954B1 Process gas distribution for forming stable fluorine-doped silicate glass and other films 失效
标题翻译：用于形成稳定的氟掺杂硅酸盐玻璃等膜的工艺气体分布
公开(公告)号：US06383954B1
公开(公告)日：2002-05-07
申请号：US09361682
申请日：1999-07-27
申请人： Yaxin Wang , Diana Chan , Turgut Sahin , Tetsuya Ishikawa , Farhad Moghadam
发明人： Yaxin Wang , Diana Chan , Turgut Sahin , Tetsuya Ishikawa , Farhad Moghadam
IPC分类号： H01L2131
CPC分类号： H01L21/02274 , C23C16/401 , C23C16/455 , H01J37/3244 , H01L21/02126 , H01L21/02129 , H01L21/02131 , H01L21/31625 , H01L21/31629
摘要： A substrate processing system includes a housing defining a chamber for forming a film on the substrate surface of a substrate disposed within the chamber. The system includes a first plurality of nozzles that extend into the chamber for injecting a first chemical at a first distance from a periphery of the substrate surface, and a second plurality of nozzles that extend into the chamber for injecting a second chemical at a second distance from the periphery of the substrate surface. The second distance is substantially equal to or smaller than the first distance. In one embodiment, the first chemical contains a dielectric material and the second chemical contains dopant species which react with the first chemical to deposit a doped dielectric material on the substrate. Injecting the dopant species closer to the substrate surface than previously done ensures that the dopant species are distributed substantially uniformly over the substrate surface and the deposition of a stable doped dielectric layer.
摘要翻译：衬底处理系统包括限定用于在设置在腔室内的衬底的衬底表面上形成膜的腔室。该系统包括第一多个喷嘴，其延伸到腔室中，用于从衬底表面的周边第一距离处注入第一化学品;以及第二多个喷嘴，其延伸到室中，用于以第二距离注入第二化学品从基板表面的周边。第二距离基本上等于或小于第一距离。在一个实施例中，第一化学品包含介电材料，第二化学品含有与第一化学物质反应以在衬底上沉积掺杂电介质材料的掺杂剂物质。注入比以前更接近于衬底表面的掺杂剂物质确保掺杂剂物质基本均匀地分布在衬底表面上并沉积稳定的掺杂介电层。

10. 发明授权

US07542132B2 Raman spectroscopy as integrated chemical metrology 失效
标题翻译：拉曼光谱作为综合化学计量学
公开(公告)号：US07542132B2
公开(公告)日：2009-06-02
申请号：US11830202
申请日：2007-07-30
申请人： Hongbin Fang , Josh Golden , Timothy W. Weidman , Yaxin Wang , Arulkumar Shanmugasundram
发明人： Hongbin Fang , Josh Golden , Timothy W. Weidman , Yaxin Wang , Arulkumar Shanmugasundram
IPC分类号： G01J3/44 , G01N21/65
CPC分类号： G01N21/65
摘要： A method for measuring the concentration of the metal solution and reducing agent solution within the electroless plating solution is disclosed. Raman spectroscopy is used to measure the concentration of each solution within the electroless plating solution after they have been mixed together. By measuring the concentration of each solution prior to providing the solution to a plating cell, the concentration of the individual solutions can be adjusted so that the targeted concentration of each solution is achieved. Additionally, each solution can be individually analyzed using Raman spectroscopy prior to mixing with the other solutions. Based upon the Raman spectroscopy measurements of the individual solutions prior to mixing, the individual components that make up each solution can be adjusted prior to mixing so that the targeted component concentration can be achieved.
摘要翻译：公开了一种用于测量化学镀溶液中的金属溶液和还原剂溶液的浓度的方法。拉曼光谱法用于测量化学镀溶液混合在一起后每种溶液的浓度。通过在将溶液提供给电镀池之前测量每种溶液的浓度，可以调节各溶液的浓度，从而实现每种溶液的目标浓度。此外，每个溶液可以在与其他溶液混合之前使用拉曼光谱单独分析。基于混合前单个溶液的拉曼光谱测量，可以在混合之前调整组成每种溶液的各个组分，从而可以实现目标组分浓度。

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