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1. 发明授权

US08518210B2 Purging of porogen from UV cure chamber 有权
标题翻译：从UV固化室清洗致孔剂
公开(公告)号：US08518210B2
公开(公告)日：2013-08-27
申请号：US13562421
申请日：2012-07-31
申请人： Eugene Smargiassi , Stephen Yu-Hong Lau , George D. Kamian , Ming Xi
发明人： Eugene Smargiassi , Stephen Yu-Hong Lau , George D. Kamian , Ming Xi
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/67115 , H01L21/02041 , H01L21/02203 , H01L21/02348 , H01L21/67017 , H01L21/6719 , H01L21/67207
摘要： An apparatus for purging a space in a processing chamber comprises a source of a purge gas; an inlet portion of a purge ring; an inlet baffle located in the inlet portion and fluidically connected to the source of purge gas; and an exhaust portion of the purge ring. The inlet portion and the exhaust portion define a ring hole space having a 360° periphery. The inlet baffle preferably surrounds not less than 180° of said periphery. The inlet baffle is operable to convey purge gas into the ring hole space. The exhaust portion is operable to convey purge gas and other matter out of the ring hole space. Cleaning of the purge ring and other structures in a processing chamber is conducted by flowing a cleaning gas through the inlet baffle. Some embodiments include a gas inlet plenum and an exhaust channel but not a purge ring.
摘要翻译：用于清洗处理室中的空间的装置包括净化气体源; 清洗环的入口部分; 入口挡板，其位于入口部分中并且流体连接到吹扫气体源; 和净化环的排气部分。入口部分和排气部分限定具有360°周边的环孔空间。入口挡板优选地围绕所述周边不小于180°。入口挡板可操作以将清洗气体输送到环孔空间中。排气部分可操作以将净化气体和其它物质输送出环孔空间。通过使清洁气体流过入口挡板来进行清洁环和处理室中的其它结构的清洁。一些实施例包括气体入口增压室和排气通道，但不包括净化环。

2. 发明授权

US08027746B2 Atomic layer deposition apparatus 有权
标题翻译：原子层沉积装置
公开(公告)号：US08027746B2
公开(公告)日：2011-09-27
申请号：US12953220
申请日：2010-11-23
申请人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
发明人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
IPC分类号： G06F19/00 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.
摘要翻译：描述了用于原子层沉积（ALD）的方法和装置。该装置包括沉积室和晶片支架。沉积室被分成两个或更多个彼此一体地连接的沉积区域。晶片支撑件可在沉积室内的两个或更多互连的沉积区域之间移动。

3. 发明申请

US20110111603A1 ATOMIC LAYER DEPOSITION APPARATUS 有权
标题翻译：原子层沉积装置
公开(公告)号：US20110111603A1
公开(公告)日：2011-05-12
申请号：US12953220
申请日：2010-11-23
申请人： BARRY L. CHIN , ALFRED W. MAK , LAWRENCE CHUNG-LAI LEI , MING XI , HUA CHUNG , KEN KAUNG LAI , JEONG SOO BYUN
发明人： BARRY L. CHIN , ALFRED W. MAK , LAWRENCE CHUNG-LAI LEI , MING XI , HUA CHUNG , KEN KAUNG LAI , JEONG SOO BYUN
IPC分类号： H01L21/465 , C23C16/455 , C23C16/458
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.
摘要翻译：描述了用于原子层沉积（ALD）的方法和装置。该装置包括沉积室和晶片支架。沉积室被分成两个或更多个彼此一体地连接的沉积区域。晶片支撑件可在沉积室内的两个或更多互连的沉积区域之间移动。

4. 发明申请

US20110100295A1 SYSTEM AND METHOD FOR FORMING AN INTEGRATED BARRIER LAYER 审中-公开
标题翻译：用于形成集成障碍层的系统和方法
公开(公告)号：US20110100295A1
公开(公告)日：2011-05-05
申请号：US12987962
申请日：2011-01-10
申请人： Ming Xi , Michael Yang , Hui Zhang
发明人： Ming Xi , Michael Yang , Hui Zhang
IPC分类号： C23C16/52 , C23C16/455
CPC分类号： H01L21/76846 , H01L21/28562 , H01L28/75 , H01L28/84 , H01L28/90
摘要： An apparatus for processing a substrate is provided. The apparatus includes a process chamber, and a dual-mode gas distribution plate disposed within the process chamber. The dual-mode gas distribution plate comprises a first gas distribution zone disposed in a center of the gas distribution plate, and a second gas distribution zone surrounding the first gas distribution zone, the second gas distribution zone being fluidly isolated from the first gas distribution zone, wherein the first gas distribution zone is coupled to a valve system to deliver sequential pulses of a first gas to the first gas distribution zone to perform a cyclical deposition process, and the second gas distribution zone is in communication with a flow controller to deliver a second gas to perform a chemical vapor deposition process.
摘要翻译：提供了一种用于处理衬底的设备。该装置包括处理室和设置在处理室内的双模气体分配板。双模式气体分配板包括设置在气体分配板的中心的第一气体分配区和围绕第一气体分配区的第二气体分配区，第二气体分配区与第一气体分配区流体隔离，其中所述第一气体分配区域联接到阀系统以将第一气体的顺序脉冲输送到所述第一气体分配区域以执行循环沉积过程，并且所述第二气体分配区域与流量控制器连通以递送第二气体进行化学气相沉积工艺。

5. 发明授权

US07781326B2 Formation of a tantalum-nitride layer 有权
标题翻译：形成氮化钽层
公开(公告)号：US07781326B2
公开(公告)日：2010-08-24
申请号：US11240189
申请日：2005-09-30
申请人： Sean M. Seutter , Michael X. Yang , Ming Xi
发明人： Sean M. Seutter , Michael X. Yang , Ming Xi
IPC分类号： H01L21/4763
CPC分类号： C23C16/45553 , C23C16/34 , C23C16/4554 , C23C16/56 , H01L21/28562 , H01L21/28568 , H01L21/76844 , H01L21/76862
摘要： A method of forming a material on a substrate is disclosed. In one embodiment, the method includes forming a tantalum nitride layer on a substrate disposed in a plasma process chamber by sequentially exposing the substrate to a tantalum precursor and a nitrogen precursor, followed by reducing a nitrogen concentration of the tantalum nitride layer by exposing the substrate to a plasma annealing process. A metal-containing layer is subsequently deposited on the tantalum nitride layer.
摘要翻译：公开了一种在衬底上形成材料的方法。在一个实施例中，该方法包括在设置在等离子体处理室中的衬底上形成氮化钽层，通过将衬底顺序地暴露于钽前体和氮前体，然后通过暴露衬底来降低氮化钽层的氮浓度等离子体退火工艺。随后在氮化钽层上沉积含金属的层。

6. 发明申请

US20080280438A1 METHODS FOR DEPOSITING TUNGSTEN LAYERS EMPLOYING ATOMIC LAYER DEPOSITION TECHNIQUES 有权
标题翻译：沉积原子层沉积技术的沉积层的方法
公开(公告)号：US20080280438A1
公开(公告)日：2008-11-13
申请号：US12179002
申请日：2008-07-24
申请人： Ken Kaung Lai , Ravi Rajagopalan , Amit Khandelwal , Madhu Moorthy , Srinivas Gandikota , Joseph Castro , Aygerinos V. Gelatos , Cheryl Knepfler , Ping Jian , Hongbin Fang , Chao-Ming Huang , Ming Xi , Michael X. Yang , Hua Chung , Jeong Soo Byun
发明人： Ken Kaung Lai , Ravi Rajagopalan , Amit Khandelwal , Madhu Moorthy , Srinivas Gandikota , Joseph Castro , Aygerinos V. Gelatos , Cheryl Knepfler , Ping Jian , Hongbin Fang , Chao-Ming Huang , Ming Xi , Michael X. Yang , Hua Chung , Jeong Soo Byun
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/7687 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.
摘要翻译：在本发明的一个实施例中，提供了一种在衬底上形成含钨层的方法，其包括将包含设置在其上的阻挡层的衬底定位在处理室中，将衬底暴露于第一次浸泡过程第一时间段以及通过使含钨前体和还原剂流入所述处理室，在所述阻挡层上沉积成核层。该方法还包括将成核层暴露于第二次浸泡过程第二时间段，并将沉积层沉积在成核层上。在一个实例中，阻挡层包含氮化钛，第一和第二浸泡工艺独立地包含选自氢，硅烷，乙硅烷，二氯硅烷，硼烷，乙硼烷，其衍生物及其组合中的至少一种还原气体和成核层可以通过原子层沉积工艺或脉冲化学气相沉积工艺沉积，同时可以通过化学气相沉积工艺或物理气相沉积工艺沉积主体层。

7. 发明授权

US07405158B2 Methods for depositing tungsten layers employing atomic layer deposition techniques 有权
标题翻译：使用原子层沉积技术沉积钨层的方法
公开(公告)号：US07405158B2
公开(公告)日：2008-07-29
申请号：US11038592
申请日：2005-01-19
申请人： Ken Kaung Lai , Ravi Rajagopalan , Amit Khandelwal , Madhu Moorthy , Srinivas Gandikota , Joseph Castro , Averginos V. Gelatos , Cheryl Knepfler , Ping Jian , Hongbin Fang , Chao-Ming Huang , Ming Xi , Michael X. Yang , Hua Chung , Jeong Soo Byun
发明人： Ken Kaung Lai , Ravi Rajagopalan , Amit Khandelwal , Madhu Moorthy , Srinivas Gandikota , Joseph Castro , Averginos V. Gelatos , Cheryl Knepfler , Ping Jian , Hongbin Fang , Chao-Ming Huang , Ming Xi , Michael X. Yang , Hua Chung , Jeong Soo Byun
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/7687 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.
摘要翻译：在本发明的一个实施例中，提供了一种在衬底上形成含钨层的方法，其包括将包含设置在其上的阻挡层的衬底定位在处理室中，将衬底暴露于第一次浸泡过程第一时间段以及通过使含钨前体和还原剂流入所述处理室，在所述阻挡层上沉积成核层。该方法还包括将成核层暴露于第二次浸泡过程第二时间段，并将沉积层沉积在成核层上。在一个实例中，阻挡层包含氮化钛，第一和第二浸泡工艺独立地包含选自氢，硅烷，乙硅烷，二氯硅烷，硼烷，乙硼烷，其衍生物及其组合中的至少一种还原气体和成核层可以通过原子层沉积工艺或脉冲化学气相沉积工艺沉积，同时可以通过化学气相沉积工艺或物理气相沉积工艺沉积主体层。

8. 发明授权

US07201803B2 Valve control system for atomic layer deposition chamber 有权
标题翻译：用于原子层沉积室的阀门控制系统
公开(公告)号：US07201803B2
公开(公告)日：2007-04-10
申请号：US10731651
申请日：2003-12-09
申请人： Siqing Lu , Yu Chang , Dongxi Sun , Vinh Dang , Michael X. Yang , Anzhong (Andrew) Chang , Anh N. Nguyen , Ming Xi
发明人： Siqing Lu , Yu Chang , Dongxi Sun , Vinh Dang , Michael X. Yang , Anzhong (Andrew) Chang , Anh N. Nguyen , Ming Xi
IPC分类号： B05C11/00
CPC分类号： G05D11/133 , Y10T436/104998 , Y10T436/12
摘要： A valve control system for a semiconductor processing chamber includes a system control computer and a plurality of electrically controlled valves associated with the processing chamber. The system further includes a programmable logic controller in communication with the system control computer and operatively coupled to the electrically controlled valves. The refresh time for control of the valves may be less than 10 milliseconds. Consequently, valve control operations do not significantly extend the period of time required for highly repetitive cycling in atomic layer deposition processes. A hardware interlock may be implemented through the output power supply of the programmable logic controller.
摘要翻译：用于半导体处理室的阀门控制系统包括系统控制计算机和与处理室相关联的多个电控阀。该系统还包括与系统控制计算机通信并可操作地耦合到电控阀的可编程逻辑控制器。控制阀的刷新时间可能小于10毫秒。因此，阀门控制操作不会显着延长原子层沉积工艺中高度重复循环所需的时间。可以通过可编程逻辑控制器的输出电源实现硬件互锁。

9. 发明申请

US20060292864A1 PLASMA-ENHANCED CYCLIC LAYER DEPOSITION PROCESS FOR BARRIER LAYERS 有权
标题翻译：梯度层的等离子体增强循环层析沉积过程
公开(公告)号：US20060292864A1
公开(公告)日：2006-12-28
申请号：US11458852
申请日：2006-07-20
申请人： Michael Yang , Toshio Itoh , Ming Xi
发明人： Michael Yang , Toshio Itoh , Ming Xi
IPC分类号： H01L21/44
CPC分类号： C23C16/45531 , C23C16/06 , C23C16/34 , C23C16/42 , C23C16/452 , C23C16/45529 , C23C16/45542 , C23C16/45565 , C23C16/5096 , C23C16/515 , C23C16/54 , H01J37/32082 , H01J37/3244 , H01L21/02153 , H01L21/02271 , H01L21/0228 , H01L21/28556 , H01L21/28562 , H01L21/28568 , H01L21/3122 , H01L21/3127 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76856
摘要： In one embodiment, a method for forming a metal-containing material on a substrate is provided which includes forming a metal containing barrier layer on a substrate by a plasma-enhanced cyclical vapor deposition process, exposing the substrate to a soak process, and depositing a conductive material on the substrate by a second vapor deposition process. The substrate may be exposed to a silicon-containing compound (e.g., silane) during the soak process. In some examples, a metallic nitride layer may be deposited subsequent to the soak process and prior to the second vapor deposition process. In other examples, the metal containing barrier layer contains metallic titanium, the metallic nitride layer contains titanium nitride, and the conductive material contains tungsten or copper. The plasma-enhanced cyclical vapor deposition process may further include exposing the substrate to a nitrogen precursor, such as nitrogen, hydrogen, a nitrogen/hydrogen mixture, ammonia, hydrazine, or derivatives thereof.
摘要翻译：在一个实施例中，提供了一种用于在衬底上形成含金属材料的方法，其包括通过等离子体增强循环气相沉积工艺在衬底上形成含金属的阻挡层，将衬底暴露于浸泡工艺，并沉积通过第二气相沉积工艺在衬底上形成导电材料。在浸泡过程期间，可将基底暴露于含硅化合物（例如硅烷）。在一些实例中，金属氮化物层可以在浸泡工艺之后并在第二气相沉积工艺之前沉积。在其他实例中，含金属阻挡层含有金属钛，金属氮化物层含有氮化钛，导电材料含有钨或铜。等离子体增强的循环气相沉积方法还可以包括将底物暴露于氮前体，例如氮，氢，氮/氢混合物，氨，肼或其衍生物。

10. 发明申请

US20060264031A1 METHOD FOR DEPOSITING TUNGSTEN-CONTAINING LAYERS BY VAPOR DEPOSITION TECHNIQUES 有权
标题翻译：通过蒸发沉积技术沉积含钨层的方法
公开(公告)号：US20060264031A1
公开(公告)日：2006-11-23
申请号：US11461909
申请日：2006-08-02
申请人： Ming Xi , Ashok Sinha , Moris Kori , Alfred Mak , Xinliang Lu , Ken Lai , Karl Littau
发明人： Ming Xi , Ashok Sinha , Moris Kori , Alfred Mak , Xinliang Lu , Ken Lai , Karl Littau
IPC分类号： H01L21/4763
CPC分类号： C23C16/0272 , C23C16/34 , C23C16/45525 , C23C16/45527 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten nucleation layer by sequentially exposing a substrate to a boron-containing gas and a tungsten-containing gas within a processing chamber during an atomic layer deposition process, and forming a tungsten bulk layer on the tungsten nucleation layer by exposing the substrate to a processing gas that contains the tungsten-containing gas and a reactive precursor gas within another processing chamber during a chemical vapor deposition process. In one example, the tungsten nucleation layer is deposited on a dielectric material, such as silicon oxide. In another example, the tungsten nucleation layer is deposited on a barrier material, such as titanium or titanium nitride. Other examples provide that the tungsten nucleation layer and the tungsten bulk layer are deposited in the same processing chamber.
摘要翻译：在一个实施例中，提供了一种用于在基板上形成含钨材料的方法，其包括通过在原子层中将衬底顺序地暴露于处理室内的含硼气体和含钨气体来形成钨成核层通过在化学气相沉积工艺期间将衬底暴露于另一处理室内含有含钨气体和反应性前体气体的处理气体，在钨成核层上形成钨体层。在一个实例中，钨成核层沉积在介电材料如氧化硅上。在另一个实例中，钨成核层沉积在诸如钛或氮化钛的阻挡材料上。其他实例提供了钨成核层和钨本体层沉积在相同的处理室中。

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