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41. 发明授权

US5381027A Semiconductor device having a heterojunction and a two dimensional gas as an active layer 失效
标题翻译：具有异质结和二维气体作为有源层的半导体器件
公开(公告)号：US5381027A
公开(公告)日：1995-01-10
申请号：US134622
申请日：1993-10-12
申请人： Toshiyuki Usagawa , Kenji Hiruma , Masahiko Kawata , Shigeo Goto , Katsuhiko Mitani , Masao Yamane , Susumu Takahashi , Tomonori Tanoue , Yoshinori Imamura
发明人： Toshiyuki Usagawa , Kenji Hiruma , Masahiko Kawata , Shigeo Goto , Katsuhiko Mitani , Masao Yamane , Susumu Takahashi , Tomonori Tanoue , Yoshinori Imamura
IPC分类号： H01L21/18 , H01L21/285 , H01L21/331 , H01L21/335 , H01L27/06 , H01L29/737 , H01L29/778 , H01L29/804 , H01L29/784
CPC分类号： H01L29/66318 , H01L21/182 , H01L21/28587 , H01L27/0605 , H01L29/66462 , H01L29/7373 , H01L29/7787
摘要： This invention discloses a heterojunction type field effect transistor such as 2DEG-FET and a heterojunction type bipolar transistor such as 2DEG-HBT. The former is fabricated by applying to the formation of its source and drain regions a technique which causes the disorder of the heterojunction by intoduction of an impurity such as by ion implantation or a technique which causes the disorder of the heterojunction by forming a film made of at least one kind of material selected from insulators, metals and semiconductors which have a different linear coefficient of thermal expansion from that of the material of a semiconductor substrate on the heterojunction semiconductor region which is to be disordered. The latter is fabricated by applying either of the techniques described above to a base ohmic contact region. These semiconductor devices can reduce the source-gate resistance and the parasitic base resistance. The invention discloses also the structure of the ohmic contact layer which has a trench on the surface thereof and is particularly effective for reducing the source-gate parasitic resistance.
摘要翻译：本发明公开了一种异质结型场效应晶体管，例如2DEG-FET和异质结型双极晶体管，例如2DEG-HBT。前者通过应用于其源极和漏极区域的形成来制造通过诸如通过离子注入引起杂质的异质结的紊乱或通过形成由选自绝缘体，金属和半导体的至少一种材料，其具有不同于待混杂的异质结半导体区域上的半导体衬底的材料的线性热膨胀系数。后者通过将上述技术中的任一种应用于基极欧姆接触区域来制造。这些半导体器件可以降低源极栅极电阻和寄生基极电阻。本发明还公开了欧姆接触层的结构，其在其表面上具有沟槽，并且对于减小源极寄生电阻特别有效。

42. 发明授权

US4902635A Method for production of compound semicondutor devices 失效
标题翻译：复合半导体器件的生产方法
公开(公告)号：US4902635A
公开(公告)日：1990-02-20
申请号：US175704
申请日：1988-03-31
申请人： Yoshinori Imamura , Masaru Miyazaki , Akihisa Terano , Nobutoshi Matsunaga , Hiroshi Yanazawa
发明人： Yoshinori Imamura , Masaru Miyazaki , Akihisa Terano , Nobutoshi Matsunaga , Hiroshi Yanazawa
IPC分类号： H01L21/338 , H01L21/768 , H01L21/8252 , H01L23/532 , H01L29/417 , H01L29/423 , H01L29/812
CPC分类号： H01L23/5329 , H01L21/7688 , H01L21/8252 , H01L29/41775 , H01L29/42316 , H01L2924/0002
摘要： This invention is related to the method for production of semiconductor devices suitable for increasing the integration density of semiconductor integrated circuits, especially GaAs semiconductor IC devices.This invention uses no third wiring metal, contact hole or through hole for connection between the Schottky junction and ohmic electrodes formed on the GaAs semiconductor substrate required in the conventional technology, but provides the method for direct connection between the two electrodes stated above by means of vapor deposition, ion implantation, sputtering, CVD, plasma CVD, dry etching and wet etching.Since the application of this invention enables the two electrodes stated above to be directly connected with high yield, the element area at the connecting portion can be reduced to less than half as compared with the same required in the conventional method, the total element area can be reduced greatly.
摘要翻译：本发明涉及适用于提高半导体集成电路，尤其是GaAs半导体IC器件的集成密度的半导体器件的制造方法。本发明不使用在传统技术中所需的GaAs半导体衬底上形成的肖特基结和欧姆电极之间的第三布线金属，接触孔或通孔，而是提供了通过以下方式直接连接在上述两个电极之间的方法：气相沉积，离子注入，溅射，CVD，等离子体CVD，干蚀刻和湿蚀刻。由于本发明的应用使得上述两个电极能够以高产率直接连接，所以连接部分的元件面积可以比常规方法所需的量减少到小于一半，总元件面积可以大大减少

43. 发明授权

US4609846A Image pick-up tube having collector and balance electrodes 失效
标题翻译：摄像管具有收集器和平衡电极
公开(公告)号：US4609846A
公开(公告)日：1986-09-02
申请号：US652459
申请日：1984-09-20
申请人： Chushirou Kusano , Sachio Ishioka , Yasuharu Shimomoto , Yoshinori Imamura , Hirofumi Ogawa
发明人： Chushirou Kusano , Sachio Ishioka , Yasuharu Shimomoto , Yoshinori Imamura , Hirofumi Ogawa
IPC分类号： H01J29/45 , H01J31/28 , H01J31/30 , H01J29/82
CPC分类号： H01J29/45
摘要： An image pick-up tube has a photoelectric conversion target including a transparent substrate, and a transparent electrode and a photoconductive layer formed on the transparent substrate. An electron beam is scanned on the photoelectric conversion target. A first electrode is formed on a beam scanning surface of the photoconductive layer so as to be segmented in stripe or grid with its electrode segments electrically connected to each other. A second electrode is formed on the first electrode through an insulating layer with its electrode segments electrically connected to each other. An insulating layer may be interposed between the first electrode and the photoconductive layer.
摘要翻译：图像拾取管具有包括透明基板的光电转换目标，以及形成在透明基板上的透明电极和光电导层。在光电转换靶上扫描电子束。第一电极形成在光电导层的光束扫描表面上，以便以带状或栅格分割，其电极段彼此电连接。第二电极通过绝缘层形成在第一电极上，其电极段彼此电连接。可以在第一电极和光电导层之间插入绝缘层。

44. 发明授权

US4556816A Photoelectric device 失效
标题翻译：光电器件
公开(公告)号：US4556816A
公开(公告)日：1985-12-03
申请号：US510910
申请日：1983-07-05
申请人： Yoshinori Imamura , Saburo Ataka , Yukio Takasaki , Yasuo Tanaka , Tadaaki Hirai , Eiichi Maruyama
发明人： Yoshinori Imamura , Saburo Ataka , Yukio Takasaki , Yasuo Tanaka , Tadaaki Hirai , Eiichi Maruyama
IPC分类号： H01J29/45 , H01L31/0248 , H01L31/09 , H04N5/30 , H04N5/335 , H04N5/361 , H04N5/369 , H01J31/00 , H01J31/26
CPC分类号： H01L31/095 , H01J29/456 , H01J9/233
摘要： Disclosed is a photoelectric device having at least a signal electrode, and an amorphous photoconductor layer whose principal constituent is silicon and which contains hydrogen as an indispensable constituent element, the amorphous photoconductor layer being disposed in adjacency to the signal electrode, characterized by comprising a thin layer interposed between the signal electrode and the amorphous photoconductor layer, the thin layer being made of an inorganic material whose principal constituent is at least one compound selected from the group consisting of oxides of at least one element selected from the group that consists of Si, Ti, Al, Mg, Ba, Ta, Bi, V, Ni, Th, Fe, La, Be, Sc and Co, nitrides of at least one element selected from the group that consists of Ga, Si, Mg, Te, Hf, Zr, Nb and B, and halides of at least one element selected from the group that consists of Na, Mg, Li, Ba, Ca and K.
摘要翻译：公开了至少具有信号电极的光电器件和主要成分为硅并且含有氢作为不可或缺的构成元件的非晶质感光体层，非晶体感光体层与信号电极相邻设置，其特征在于，包括薄的层，其被设置在信号电极和非晶体感光体层之间，薄层由主要成分为选自由Si组成的组中的至少一种元素的氧化物组成的组中的至少一种化合物的无机材料制成， Ti，Al，Mg，Ba，Ta，Bi，V，Ni，Th，Fe，La，Be，Sc和Co，选自由Ga，Si，Mg，Te，Hf组成的组中的至少一种元素的氮化物，Zr，Nb和B以及选自由Na，Mg，Li，Ba，Ca和K组成的组中的至少一种元素的卤化物。

45. 发明授权

US4360821A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4360821A
公开(公告)日：1982-11-23
申请号：US66230
申请日：1979-08-13
申请人： Toshihisa Tsukada , Eiichi Maruyama , Toru Baji , Saburo Ataka , Yoshinori Imamura , Akira Sasano , Masaharu Kubo , Norio Koike , Shusaku Nagahara
发明人： Toshihisa Tsukada , Eiichi Maruyama , Toru Baji , Saburo Ataka , Yoshinori Imamura , Akira Sasano , Masaharu Kubo , Norio Koike , Shusaku Nagahara
IPC分类号： H01L27/146 , H01L27/14
CPC分类号： H01L27/14665
摘要： In a solid-state imaging device having a plurality of photosensitive portions and a semiconductor substrate which includes at least scanning means for scanning the photosensitive portions, the photosensitive portions including a layer of a photosensitive material overlying the semiconductor substrate and a transparent electrically conductive film overlying the photosensitive material layer; a solid-state imaging device characterized in that the photosensitive material is an amorphous material whose indispensable constituent is silicon and which contains hydrogen. The hydrogen content of the photosensitive material is preferably 5 atomic-% to 30 atomic-%, especially 10 atomic-% to 25 atomic-%.
摘要翻译：在具有多个感光部分的固态成像装置和至少包括用于扫描感光部分的扫描装置的半导体衬底上，感光部分包括覆盖在半导体衬底上的感光材料层和覆盖着透明导电膜的透明导电膜感光材料层; 一种固态成像装置，其特征在于感光材料是不可缺少的成分是硅并且含有氢的无定形材料。感光材料的氢含量优选为5原子％至30原子％，特别是10原子％至25原子％。

46. 发明授权

US4255686A Storage type photosensor containing silicon and hydrogen 失效
标题翻译：含硅和氢的存储型光电传感器
公开(公告)号：US4255686A
公开(公告)日：1981-03-10
申请号：US39580
申请日：1979-05-16
申请人： Eiichi Maruyama , Yoshinori Imamura , Saburo Ataka , Kiyohisa Inao , Yukio Takasaki , Toshihisa Tsukada , Tadaaki Hirai
发明人： Eiichi Maruyama , Yoshinori Imamura , Saburo Ataka , Kiyohisa Inao , Yukio Takasaki , Toshihisa Tsukada , Tadaaki Hirai
IPC分类号： H01J29/45 , H01L31/0248 , H01J31/38
CPC分类号： H01J29/45
摘要： In a photosensor having at least a light-transmitting conductive layer which is arranged on the side of light incidence, and a photoconductive layer in which charges are stored in correspondence with the light incidence; a photosensor characterized in that at least a region of said photoconductive layer for storing the charges is made of an amorphous material which contains hydrogen and silicon as indispensable constituent elements thereof, in which the silicon amounts to at least 50 atomic % and the hydrogen amounts to at least 10 atomic % and at most 50 atomic %, and whose resistivity is not lower than 10.sup.10 .OMEGA..multidot.cm.
摘要翻译：在具有布置在光入射侧的至少一个透光导电层的光电传感器中，以及与光入射相对应地存储电荷的光电导层; 一种光电传感器，其特征在于，用于存储电荷的所述光电导层的至少一个区域由含有氢和硅作为其不可缺少的构成元素的非晶材料制成，其中硅占至少50原子％，氢相当于至少10原子％且至多50原子％，并且其电阻率不低于1010欧米加×厘米2。

47. 发明申请

US20100098476A1 THERMOCHROMIC WRITING INSTRUMENT 有权
标题翻译：热敏写字仪
公开(公告)号：US20100098476A1
公开(公告)日：2010-04-22
申请号：US12528724
申请日：2008-02-08
申请人： Yoshinori Imamura , Nobuo Sekine , Masashi Ando
发明人： Yoshinori Imamura , Nobuo Sekine , Masashi Ando
IPC分类号： B43K29/00
CPC分类号： B43K5/16 , B43K1/086 , B43K7/02 , B43K7/08 , B43K7/10 , B43K7/12 , B43K23/12 , B43K24/06 , B43K24/08 , B43K24/082 , B43K24/12 , B43K27/12 , B43K29/02 , C09D11/16 , C09D11/50
摘要： There is provided a thermochromic writing instrument containing a thermochromic ink, which is capable of easily changing color of the handwriting of thermochromic ink by rubbing and also being quickly brought into a writing-capable state (pen-tip-projected state) or a stored state (pen-tip-retracted state) even when the user can use only one hand.The thermochromic writing instrument containing a thermochromic ink, wherein a writing body 8 is accommodated in a barrel 2 movably in a longitudinal direction, an operation portion 5 is provided on the outer surface of the barrel 2, a pen tip 81 of the writing body 8 is constituted so as to be projectable/retractable from/into a front-end hole 31 of the barrel 2 by operating the operation portion 5, the thermochromic ink 83 is contained in the inside of the writing body 8, the pen tip 81 capable of ejecting the thermochromic ink 83 is provided at the front end of the writing tool, and a friction portion 4 capable of thermally changing the color of the handwriting of the thermochromic ink 83 by the frictional heat generated when the handwriting is rubbed with the friction portion 4 is provided on the outer surface of the barrel 2.
摘要翻译：提供了一种含有热变色油墨的热变色书写工具，其能够通过摩擦容易地改变热变色油墨的手写体的颜色，并且还快速进入写入状态（笔尖投影状态）或存储状态（笔尖缩回状态），即使用户只能使用一只手。包含热变色油墨的热变色书写工具，其中书写体8容纳在沿纵向可移动的筒体2中，操作部分5设置在筒体2的外表面上，书写体8的笔尖81 通过操作操作部5，能够使其从筒体2的前端孔31突出地伸缩，热敏性油墨83容纳在书写体8的内部，笔尖81能够喷出热变色油墨83设置在书写工具的前端，以及摩擦部分4，其能够通过摩擦部分4摩擦手写时产生的摩擦热而热变色热变色油墨83的手写的颜色设置在筒体2的外表面上。

48. 发明授权

US07563021B2 Method device and recording medium where program is recorded, for deciding residual travel life and end of life of run-flat tire that continues traveling in run-flat condition 有权
标题翻译：记录程序的方法装置和记录介质，用于确定在平稳状态下继续行驶的漏气轮胎的剩余行程寿命和寿命结束
公开(公告)号：US07563021B2
公开(公告)日：2009-07-21
申请号：US10524262
申请日：2003-08-12
申请人： Eiji Ichihara , Yoshinori Imamura , Takehiko Yamada
发明人： Eiji Ichihara , Yoshinori Imamura , Takehiko Yamada
IPC分类号： G01K3/00 , G01K3/04 , G01K1/12
CPC分类号： B60C23/0408 , B60C23/20 , G01K13/08
摘要： There are provided a process and the like for judging a residual lifetime of a run-flat tire and an end stage of the residual lifetime thereof during continuous running at a run-flat state. The process for judging the residual lifetime of the tire of the invention is characterized in that in a vehicle equipped with a run-flat tire system comprising run-flat tires 2 and detection units 4 each arranged in the respective tire 2 and capable of measuring an atmosphere temperature in at least an interior 3 of the tire 2, when the tire 2 is continuously run at the run-flat state by an extreme lowering of an internal pressure accompanied with the occurrence of puncture or the like, after a limit temperature being statistically an occurrence of trouble is previously set, the atmosphere temperature inside tire of the run-flat tire continuously running at the run-flat state is measured, and a runnable time and/or distance until the run-flat tire results in trouble is predicted by using the atmosphere temperature inside tire measured and data calculated therefrom.
摘要翻译：提供了一种用于在连续运行中的平坦状态下判断漏气保用轮胎的剩余寿命和剩余寿命的终止阶段的过程等。用于判断本发明的轮胎的残余寿命的方法的特征在于，在配备有排气轮胎2和检测单元4的排气轮胎系统的车辆中，每个排气轮胎2和检测单元4分别布置在相应的轮胎2中并且能够测量在轮胎2的至少内部3中的气氛温度，当轮胎2在极限温度为统计学上时，由于伴随着穿刺等的发生的内部压力的极度降低而在平坦状态下连续运行预先设定故障的发生，测量在平坦状态下持续运行的漏气保用轮胎的轮胎内的气氛温度，直到排气轮胎产生麻烦的运行时间和/或距离由使用测量的轮胎内部的气氛温度和由此计算的数据。

49. 发明授权

US06576937B2 Semiconductor device and power amplifier using the same 失效
标题翻译：半导体器件和功率放大器使用相同
公开(公告)号：US06576937B2
公开(公告)日：2003-06-10
申请号：US09863343
申请日：2001-05-24
申请人： Hiroyuki Takazawa , Tohru Oka , Isao Ohbu , Yoshinori Imamura
发明人： Hiroyuki Takazawa , Tohru Oka , Isao Ohbu , Yoshinori Imamura
IPC分类号： H01L310328
CPC分类号： H01L29/7371 , H03F3/60
摘要： A semiconductor device including a bipolar transistor having an emitter layer consisting of a semiconductor containing indium, and a protective insulating film containing silicon and oxygen which is formed on the surface of the guard ring of the emitter layer, wherein the protective insulating film has a density of oxygen of less than 7×1022 cm−3. This semiconductor device prevents performance deterioration and ensures high performance in a power amplifier.
摘要翻译：一种半导体器件，包括具有包含铟的半导体的发射极层的双极晶体管和形成在发射极层的保护环的表面上的含有氧和氧的保护绝缘膜，其中该保护绝缘膜具有密度的氧气小于7×1022厘米-3。该半导体器件防止性能恶化并确保功率放大器的高性能。

50. 发明授权

US5373191A Semiconductor device and method of producing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5373191A
公开(公告)日：1994-12-13
申请号：US998856
申请日：1992-12-30
申请人： Toshiyuki Usagawa , Yoshinori Imamura , Hidekazu Okuhira , Shigeo Goto , Masayoshi Kobayashi , Shinichiro Takatani
发明人： Toshiyuki Usagawa , Yoshinori Imamura , Hidekazu Okuhira , Shigeo Goto , Masayoshi Kobayashi , Shinichiro Takatani
IPC分类号： H01L21/285 , H01L21/331 , H01L21/335 , H01L21/337 , H01L21/338 , H01L21/60 , H01L21/8252 , H01L23/485 , H01L29/812 , H01L29/80 , H01L23/48 , H01L29/06 , H01L29/48
CPC分类号： H01L21/76897 , H01L21/28587 , H01L21/8252 , H01L23/485 , H01L29/66318 , H01L29/66462 , H01L29/66863 , H01L29/66871 , H01L29/66924 , H01L29/8128 , H01L2924/0002
摘要： Source and drain electrode metals of a field effect transistor having a recessed gate electrode metal are directly connected to a high impurity concentration semiconductor layer which faces the gate electrode metal through an insulator film which defines the side wall of the recess. The source and drain electrode metals may be disposed so as to face the gate electrode metal through the side insulator film. With this arrangement, it is possible to lower the parasitic resistance between the gate electrode and another electrode of the field effect transistor, to lower the contact resistance between a semiconductor layer and the source and drain electrodes, to reduce the capacitance of the recess gate electrode and to increase the source-gate breakdown voltage, advantageously. The above-described arrangement is particularly suitable for a transistor employing a compound semiconductor, and can also be applied to semiconductor devices other than field effect transistors. Such semiconductor devices can readily be produced by forming a gate electrode metal with a self-alignment process using the lift-off method.
摘要翻译：具有凹陷栅电极金属的场效应晶体管的源电极和漏电极金属通过限定凹部的侧壁的绝缘膜直接连接到面向栅电极金属的高杂质浓度半导体层。源电极和漏电极金属可以通过侧绝缘膜设置成面对栅电极金属。通过这种布置，可以降低场效应晶体管的栅电极和另一电极之间的寄生电阻，以降低半导体层与源电极和漏电极之间的接触电阻，以减小凹陷栅电极的电容并且有利地增加源极栅极击穿电压。上述布置特别适用于采用化合物半导体的晶体管，并且还可以应用于场效应晶体管以外的半导体器件。这种半导体器件可以容易地通过使用剥离法形成具有自对准工艺的栅电极金属来制造。

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