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1. 发明授权

US5373191A Semiconductor device and method of producing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5373191A
公开(公告)日：1994-12-13
申请号：US998856
申请日：1992-12-30
申请人： Toshiyuki Usagawa , Yoshinori Imamura , Hidekazu Okuhira , Shigeo Goto , Masayoshi Kobayashi , Shinichiro Takatani
发明人： Toshiyuki Usagawa , Yoshinori Imamura , Hidekazu Okuhira , Shigeo Goto , Masayoshi Kobayashi , Shinichiro Takatani
IPC分类号： H01L21/285 , H01L21/331 , H01L21/335 , H01L21/337 , H01L21/338 , H01L21/60 , H01L21/8252 , H01L23/485 , H01L29/812 , H01L29/80 , H01L23/48 , H01L29/06 , H01L29/48
CPC分类号： H01L21/76897 , H01L21/28587 , H01L21/8252 , H01L23/485 , H01L29/66318 , H01L29/66462 , H01L29/66863 , H01L29/66871 , H01L29/66924 , H01L29/8128 , H01L2924/0002
摘要： Source and drain electrode metals of a field effect transistor having a recessed gate electrode metal are directly connected to a high impurity concentration semiconductor layer which faces the gate electrode metal through an insulator film which defines the side wall of the recess. The source and drain electrode metals may be disposed so as to face the gate electrode metal through the side insulator film. With this arrangement, it is possible to lower the parasitic resistance between the gate electrode and another electrode of the field effect transistor, to lower the contact resistance between a semiconductor layer and the source and drain electrodes, to reduce the capacitance of the recess gate electrode and to increase the source-gate breakdown voltage, advantageously. The above-described arrangement is particularly suitable for a transistor employing a compound semiconductor, and can also be applied to semiconductor devices other than field effect transistors. Such semiconductor devices can readily be produced by forming a gate electrode metal with a self-alignment process using the lift-off method.
摘要翻译：具有凹陷栅电极金属的场效应晶体管的源电极和漏电极金属通过限定凹部的侧壁的绝缘膜直接连接到面向栅电极金属的高杂质浓度半导体层。源电极和漏电极金属可以通过侧绝缘膜设置成面对栅电极金属。通过这种布置，可以降低场效应晶体管的栅电极和另一电极之间的寄生电阻，以降低半导体层与源电极和漏电极之间的接触电阻，以减小凹陷栅电极的电容并且有利地增加源极栅极击穿电压。上述布置特别适用于采用化合物半导体的晶体管，并且还可以应用于场效应晶体管以外的半导体器件。这种半导体器件可以容易地通过使用剥离法形成具有自对准工艺的栅电极金属来制造。

2. 发明授权

US5181087A Semiconductor device and method of producing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5181087A
公开(公告)日：1993-01-19
申请号：US340471
申请日：1989-04-19
申请人： Toshiyuki Usagawa , Yoshinori Imamura , Hidekazu Okuhira , Shigeo Goto , Masayoshi Kobayashi , Shinichiro Takatani
发明人： Toshiyuki Usagawa , Yoshinori Imamura , Hidekazu Okuhira , Shigeo Goto , Masayoshi Kobayashi , Shinichiro Takatani
IPC分类号： H01L21/285 , H01L21/331 , H01L21/335 , H01L21/337 , H01L21/338 , H01L21/60 , H01L21/8252 , H01L23/485 , H01L29/812
CPC分类号： H01L21/76897 , H01L21/28587 , H01L21/8252 , H01L23/485 , H01L29/66318 , H01L29/66462 , H01L29/66863 , H01L29/66871 , H01L29/66924 , H01L29/8128 , H01L2924/0002
摘要： Source and drain electrode metals of a field effect transistor having a recessed gate electrode metal are directly connected to a high impurity concentration semiconductor layer which faces the gate electrode metal through an insulator film which defines the side wall of the recess. The source and drain electrode metals may be disposed so as to face the gate electrode metal through the side insulator film. With this arrangement, it is possible to lower the parasitic resistance between the gate electrode and another electrode of the field effect transistor, to lower the contact resistance between a semiconductor layer and the source and drain electrodes, to reduce the capacitance of the recess gate electrode and to increase the source-gate breakdown voltage, advantageously. The above-described arrangement is particularly suitable for a transistor employing a compound semiconductor, and can also be applied to semiconductor devices other than field effect transistors. Such semiconductor devices can readily be produced by forming a gate electrode metal with a self-alignment process using the lift-off method.
摘要翻译：具有凹陷栅电极金属的场效应晶体管的源电极和漏电极金属通过限定凹部的侧壁的绝缘膜直接连接到面向栅电极金属的高杂质浓度半导体层。源电极和漏电极金属可以通过侧绝缘膜设置成面对栅电极金属。通过这种布置，可以降低场效应晶体管的栅电极和另一电极之间的寄生电阻，以降低半导体层与源电极和漏电极之间的接触电阻，以减小凹陷栅电极的电容并且有利地增加源极栅极击穿电压。上述布置特别适用于采用化合物半导体的晶体管，并且还可以应用于场效应晶体管以外的半导体器件。这种半导体器件可以容易地通过使用剥离法形成具有自对准工艺的栅电极金属来制造。

3. 发明授权

US5025751A Solid film growth apparatus 失效
标题翻译：固体膜生长装置
公开(公告)号：US5025751A
公开(公告)日：1991-06-25
申请号：US366185
申请日：1989-06-14
申请人： Shinichiro Takatani , Shigeo Goto , Masahiko Kawata , Kenji Hiruma
发明人： Shinichiro Takatani , Shigeo Goto , Masahiko Kawata , Kenji Hiruma
IPC分类号： C23C16/44 , C23C16/455 , C30B25/02 , C30B25/14
CPC分类号： C23C16/4551 , C30B25/02 , C30B25/14 , C30B29/40 , Y10S148/169
摘要： A solid film forming apparatus, e.g., an MO-MBE (Metal-Organic Molecular Beam Epitaxy) apparatus, wherein evacuatable containers isolated from a growth chamber by a switching device and connected to raw material gas introduction pipings are provided between the growth chamber for a solid film, e.g., a compound semiconductor, and raw material gas introduction pipings. Growth of the solid film is controlled by opening and closing the switching device and evacuating the container at least while the switching device is closed during the growth of the solid film. An undesired influence on the growing film due to residual gas in the containers which are not used for growth can be prevented and, hence, interception and introduction of the raw material gas into the growth chamber can be performed with remarkably high controllability, and films of superior abruptness of the interface between films, e.g., the heterojunction of the compound semiconductor, can be obtained.
摘要翻译：一种固体成膜装置，例如MO-MBE（金属有机分子束外延）装置，其中通过开关装置从生长室隔离并连接到原料气体导入管的可排出容器设置在生长室之间用于固体膜，例如化合物半导体和原料气体导入管。至少在固体膜生长期间开关装置关闭时，通过打开和关闭开关装置并抽出容器来控制固体膜的生长。可以防止由于不用于生长的容器中的残留气体对生长的膜产生不期望的影响，因此可以以非常高的可控性进行原料气体截留和引入生长室，并且可以进行膜的可以获得膜之间的界面的优异的突变性，例如化合物半导体的异质结。

4. 发明授权

US06787817B2 Compound semiconductor having a doped layer between the gate and an ohmic contact of an active region 有权
标题翻译：化合物半导体在栅极与有源区的欧姆接触之间具有掺杂层
公开(公告)号：US06787817B2
公开(公告)日：2004-09-07
申请号：US10318244
申请日：2002-12-13
申请人： Hiroyuki Takazawa , Shinichiro Takatani , Masao Yamane , Masayoshi Kobayashi
发明人： Hiroyuki Takazawa , Shinichiro Takatani , Masao Yamane , Masayoshi Kobayashi
IPC分类号： H01L310328
CPC分类号： H01L29/66462 , H01L29/0657 , H01L29/7783
摘要： The present invention provides a semiconductor device for high frequency application having a high breakdown voltage and the method of manufacturing thereof. A region including a first conductivity type high impurity concentration semiconductor and a region including a first conductivity type low impurity concentration semiconductor are provided from an ohmic layer side at the side far from a semiconductor substrate of the end surface of a barrier layer opposite the semiconductor substrate and between the ohmic layer and a gate electrode. The sheet impurity concentration of the region including a first conductivity type low impurity concentration semiconductor is set to be lower than that between the bottom surface of the gate electrode at the side of the semiconductor substrate and the end surface of the channel layer opposite the semiconductor substrate. The sheet impurity concentration of the region including a first conductivity type high impurity concentration semiconductor is set to be higher than that of the region including a first conductivity type low impurity concentration semiconductor.
摘要翻译：本发明提供一种具有高击穿电压的高频应用的半导体器件及其制造方法。包括第一导电型高杂质浓度半导体的区域和包括第一导电型低杂质浓度半导体的区域从远离半导体衬底的阻挡层的端面的半导体衬底的一侧的欧姆层侧提供并且在欧姆层和栅电极之间。包括第一导电型低杂质浓度半导体的区域的片状杂质浓度被设定为低于半导体衬底侧的栅电极的底表面和与半导体衬底相对的沟道层的端面之间的片状杂质浓度。将包括第一导电型高杂质浓度半导体的区域的片状杂质浓度设定为高于包含第一导电型低杂质浓度半导体的区域的片状杂质浓度。

5. 发明申请

US20170194474A1 Nitride Semiconductor Transistor Device 审中-公开
公开(公告)号：US20170194474A1
公开(公告)日：2017-07-06
申请号：US15390590
申请日：2016-12-26
申请人： Riichiro Shirota , Shinichiro Takatani
发明人： Riichiro Shirota , Shinichiro Takatani
IPC分类号： H01L29/778 , H01L29/205 , H01L29/788 , H01L29/423 , H01L29/06 , H01L29/51 , H01L29/792 , H01L29/20 , H01L29/417
CPC分类号： H01L29/7787 , H01L28/00 , H01L29/0642 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/41758 , H01L29/4236 , H01L29/4238 , H01L29/517 , H01L29/7786 , H01L29/7831 , H01L29/7832 , H01L29/788 , H01L29/792
摘要： A nitride semiconductor transistor device is disclosed to provide a normally-off nitride semiconductor transistor device which is excellent in switching properties with less dispersion of the properties. The nitride semiconductor transistor device has a buffer layer, a GaN layer, and an AlGaN layer in turn grown on a substrate. A first insulating film, a charge storage layer, a second insulating film, and a control electrode are in turn grown on the AlGaN layer. A source electrode and a drain electrode are formed to sandwich the charge storage layer over the AlGaN layer. A threshold voltage to shut off an electric current flowing between the source and drain electrodes through a conductive channel induced at an interface of the AlGaN layer and the GaN layer is made positive by adjusting charge stored in the charge storage layer.

6. 发明申请

US20110156983A1 Switching element, antenna switch circuit and radio frequency module using the same 有权
公开(公告)号：US20110156983A1
公开(公告)日：2011-06-30
申请号：US12929940
申请日：2011-02-25
申请人： Takashi Ogawa , Shinichiro Takatani , Shigeki Koya , Hiroyuki Takazawa , Shinya Osakabe , Akishige Nakajima , Yasushi Shigeno
发明人： Takashi Ogawa , Shinichiro Takatani , Shigeki Koya , Hiroyuki Takazawa , Shinya Osakabe , Akishige Nakajima , Yasushi Shigeno
IPC分类号： H01Q1/50 , H01L29/12
CPC分类号： H01L27/0605 , H01L27/0629 , H01L29/42316 , H01L29/66462 , H01L29/7783 , H01L2924/0002 , H01L2924/00
摘要： A switching element is provided that realizes an stabilize a potential between the gates of the multi-gates without an increase in the insertion loss, and an antenna switch circuit and a radio frequency module each using the switch element. The switching element includes two ohmic electrodes 39, 40 formed on a semiconductor substrate, at least two gate electrodes 41, 42 disposed between the two ohmic electrodes, and a conductive region 45 disposed between the adjacent gate electrodes among the at least two gate electrodes, a field effective transistor being structured by the two ohmic electrodes, the at least two gate electrodes, and the conductive region. The conductive region has a wider portion that is wider in width than the conductive region interposed between the adjacent gate electrodes on one end thereof. The distance between the adjacent gate electrodes is narrower than the width of the wider portion. Resistors 44, 46 are connected in series between the two ohmic electrodes through the wider portion.

7. 发明授权

US07899412B2 Switching element, antenna switch circuit and radio frequency module using the same 有权
标题翻译：开关元件，天线开关电路和射频模块使用相同
公开(公告)号：US07899412B2
公开(公告)日：2011-03-01
申请号：US12805409
申请日：2010-07-29
申请人： Takashi Ogawa , Shinichiro Takatani , Shigeki Koya , Hiroyuki Takazawa , Shinya Osakabe , Akishige Nakajima , Yasushi Shigeno
发明人： Takashi Ogawa , Shinichiro Takatani , Shigeki Koya , Hiroyuki Takazawa , Shinya Osakabe , Akishige Nakajima , Yasushi Shigeno
IPC分类号： H04B1/44
CPC分类号： H01L27/0605 , H01L27/0629 , H01L29/42316 , H01L29/66462 , H01L29/7783 , H01L2924/0002 , H01L2924/00
摘要： A switching element is provided that realizes an stabilize a potential between the gates of the multi-gates without an increase in the insertion loss, and an antenna switch circuit and a radio frequency module each using the switch element. The switching element includes two ohmic electrodes 39, 40 formed on a semiconductor substrate, at least two gate electrodes 41, 42 disposed between the two ohmic electrodes, and a conductive region 45 disposed between the adjacent gate electrodes among the at least two gate electrodes, a field effective transistor being structured by the two ohmic electrodes, the at least two gate electrodes, and the conductive region. The conductive region has a wider portion that is wider in width than the conductive region interposed between the adjacent gate electrodes on one end thereof. The distance between the adjacent gate electrodes is narrower than the width of the wider portion. Resistors 44, 46 are connected in series between the two ohmic electrodes through the wider portion.
摘要翻译：提供了一种开关元件，其实现了在不增加插入损耗的情况下使多栅极的栅极之间的电位稳定，并且每个使用开关元件的天线开关电路和射频模块。开关元件包括形成在半导体衬底上的两个欧姆电极39,40，设置在两个欧姆电极之间的至少两个栅极电极41,42以及设置在至少两个栅电极之间的相邻栅电极之间的导电区域45，场效应晶体管由两个欧姆电极，至少两个栅极电极和导电区域构成。导电区域的宽度部分的宽度比插入在其一端的相邻栅电极之间的导电区域宽。相邻栅电极之间的距离比较宽部分的宽度窄。电阻器44,46通过较宽部分串联连接在两个欧姆电极之间。

8. 发明申请

US20100297960A1 Switching element, antenna switch circuit and radio frequency module using the same 有权
公开(公告)号：US20100297960A1
公开(公告)日：2010-11-25
申请号：US12805409
申请日：2010-07-29
申请人： Takashi Ogawa , Shinichiro Takatani , Shigeki Koya , Hiroyuki Takazawa , Shinya Osakabe , Akishige Nakajima , Yasushi Shigeno
发明人： Takashi Ogawa , Shinichiro Takatani , Shigeki Koya , Hiroyuki Takazawa , Shinya Osakabe , Akishige Nakajima , Yasushi Shigeno
IPC分类号： H04B1/44 , H01L29/778
CPC分类号： H01L27/0605 , H01L27/0629 , H01L29/42316 , H01L29/66462 , H01L29/7783 , H01L2924/0002 , H01L2924/00
摘要： A switching element is provided that realizes an stabilize a potential between the gates of the multi-gates without an increase in the insertion loss, and an antenna switch circuit and a radio frequency module each using the switch element. The switching element includes two ohmic electrodes 39, 40 formed on a semiconductor substrate, at least two gate electrodes 41, 42 disposed between the two ohmic electrodes, and a conductive region 45 disposed between the adjacent gate electrodes among the at least two gate electrodes, a field effective transistor being structured by the two ohmic electrodes, the at least two gate electrodes, and the conductive region. The conductive region has a wider portion that is wider in width than the conductive region interposed between the adjacent gate electrodes on one end thereof. The distance between the adjacent gate electrodes is narrower than the width of the wider portion. Resistors 44, 46 are connected in series between the two ohmic electrodes through the wider portion.

9. 发明授权

US07256437B2 Semiconductor storage device which includes a hydrogen diffusion inhibiting layer 失效
标题翻译：包括氢扩散抑制层的半导体存储装置
公开(公告)号：US07256437B2
公开(公告)日：2007-08-14
申请号：US10920344
申请日：2004-08-18
申请人： Hiroshi Miki , Keiko Kushida , Yasuhiro Shimamoto , Shinichiro Takatani , Yoshihisa Fujisaki , Hiromi Nakai
发明人： Hiroshi Miki , Keiko Kushida , Yasuhiro Shimamoto , Shinichiro Takatani , Yoshihisa Fujisaki , Hiromi Nakai
IPC分类号： H01L29/76
CPC分类号： H01L28/75 , H01L28/55 , H01L28/57 , H01L28/60
摘要： The upper electrode of a capacitor is constituted of laminated films which act to prevent hydrogen atoms from reaching the capacitor electrodes and degrading performance. In one example, a four layer upper electrode respectively acts as a Schottky barrier layer, a hydrogen diffusion preventing layer, a reaction preventing layer, and an adsorption inhibiting layer. Therefore, the occurrence of a capacitance drop, imperfect insulation, and electrode peeling in the semiconductor device due to a reducing atmosphere can be prevented. In addition, the long-term reliability of the device can be improved.
摘要翻译：电容器的上电极由层叠膜构成，其用于防止氢原子到达电容器电极并降低性能。在一个示例中，四层上电极分别用作肖特基势垒层，氢扩散防止层，反应防止层和吸附抑制层。因此，可以防止由于还原气氛导致半导体器件中的电容下降，绝缘不良和电极剥离的发生。另外，可以提高装置的长期可靠性。

10. 发明授权

US11489050B2 Vertical nitride semiconductor transistor device 有权
公开(公告)号：US11489050B2
公开(公告)日：2022-11-01
申请号：US17143144
申请日：2021-01-06
申请人： Shinichiro Takatani , Riichiro Shirota
发明人： Shinichiro Takatani , Riichiro Shirota
IPC分类号： H01L29/40 , H01L29/778 , H01L29/06 , H01L29/423 , H01L29/51 , H01L29/205 , H01L29/20
摘要： A normally-off vertical nitride semiconductor transistor device with low threshold voltage variation includes a drift layer containing a nitride semiconductor, a channel region electrically connected to the drift layer, a source electrode, a drain electrode, a gate insulating film, and a gate electrode. The gate insulating film includes at least a first insulating film located at the channel region side, a second insulating film located at the gate electrode side, and a third insulating film between the second insulating film and the gate electrode, wherein the second insulating film has charge traps with energy levels located inside the band gaps of both the first and third insulating films, and the threshold voltage is adjusted by charges accumulated in the charge traps. The threshold voltage is used to block flowing current by substantially eliminating conduction carriers of the channel region by voltage applied to the gate electrode.

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