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1. 发明授权

US4673959A Heterojunction FET with doubly-doped channel 失效
标题翻译：具有双掺杂沟道的异质结FET
公开(公告)号：US4673959A
公开(公告)日：1987-06-16
申请号：US686661
申请日：1984-12-27
申请人： Yasuhiro Shiraki , Yoshifumi Katayama , Yoshimasa Murayama , Makoto Morioka , Yasushi Sawada , Tomoyoshi Mishima , Takao Kuroda , Eiichi Maruyama
发明人： Yasuhiro Shiraki , Yoshifumi Katayama , Yoshimasa Murayama , Makoto Morioka , Yasushi Sawada , Tomoyoshi Mishima , Takao Kuroda , Eiichi Maruyama
IPC分类号： H01L29/812 , H01L21/338 , H01L29/205 , H01L29/423 , H01L29/778 , H01L29/80
CPC分类号： H01L29/42316 , H01L29/7781 , H01L29/7786
摘要： There is disclosed a semiconductor device comprising at least first and second semiconductor layers positioned to form a hetero-junction therebetween, such a hetero-junction being adapted to form a channel, means for controlling carriers, and source and drain areas on opposite edges of the channel, wherein the first and second semiconductor layers formed between the source and drain regions have an area containing only 10.sup.16 cm.sup.-3 or less of an impurity; the first semiconductor layer has a wider forbidden band than that of the second semiconductor layer; and further including at least one semiconductor layer having a higher activation efficiency of impurities than that of the first semiconductor layer, with such at least one semiconductor layer being located on the side of the first semiconductor layer not in contact with the second semiconductor layer. A multi-quantum well structure may be used as the higher impurity activation efficiency semiconductor layer. The electrical resistance in the semiconductor area constituting the source and drain regions can be lowered by utilizing such a higher impurity activation efficiency semiconductor layer.
摘要翻译：公开了一种半导体器件，其至少包括第一和第二半导体层，该第一和第二半导体层被定位以在它们之间形成异质结，这样的异质结适于形成沟道，用于控制载流子的装置，以及在其的相对边缘上的源极和漏极区域沟道，其中形成在源区和漏区之间的第一和第二半导体层具有仅含有1016cm-3或更小的杂质的面积; 第一半导体层具有比第二半导体层更宽的禁带; 并且还包括至少一个具有比第一半导体层高的杂质活化效率的半导体层，这样的至少一个半导体层位于不与第二半导体层接触的第一半导体层的一侧。可以使用多量子阱结构作为较高的杂质活化效率半导体层。通过利用这种较高的杂质活化效率的半导体层，可以降低构成源区和漏区的半导体区的电阻。

2. 发明授权

US4605945A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4605945A
公开(公告)日：1986-08-12
申请号：US609446
申请日：1984-05-11
申请人： Yoshifumi Katayama , Yasuhiro Shiraki , Ken Yamaguchi , Yoshimasa Murayama , Yasushi Sawada , Toshiyuki Usagawa , Eiichi Maruyama
发明人： Yoshifumi Katayama , Yasuhiro Shiraki , Ken Yamaguchi , Yoshimasa Murayama , Yasushi Sawada , Toshiyuki Usagawa , Eiichi Maruyama
IPC分类号： H01L29/812 , H01L21/338 , H01L27/06 , H01L29/10 , H01L29/778 , H01L29/80
CPC分类号： H01L27/0605 , H01L29/1075 , H01L29/7786 , H01L29/7787
摘要： In a semiconductor device having at least a first semiconductor layer and a second semiconductor layer which are arranged so as to form a heterojunction, an edge of a conduction band of the first semiconductor layer being positioned lower in energy than an edge of a conduction band of the second semiconductor layer in the vicinity of the heterojunction, at least one pair of electrodes which are electronically connected with the first semiconductor layer, and means to control carriers induced in the vicinity of the heterojunction; a semiconductor device characterized in that a low impurity concentration region is comprised in at least the part of the first semiconductor layer between the pair of electrodes, that a region adjoining each of the pair of electrodes is a high impurity concentration region, and that at least one layer containing an impurity which has a conductivity type identical or opposite to that of an impurity contained in the aforementioned regions is comprised in the first semiconductor layer.
摘要翻译：在具有布置成形成异质结的至少第一半导体层和第二半导体层的半导体器件中，第一半导体层的导带的边缘的能量位于能量低于导带的边缘的能量异质结附近的第二半导体层，与第一半导体层电连接的至少一对电极，以及控制在异质结附近诱发的载流子的装置; 一种半导体器件，其特征在于，在所述一对电极之间的所述第一半导体层的至少一部分中包含低杂质浓度区域，与所述一对电极中的每一对相邻的区域是高杂质浓度区域，并且至少在第一半导体层中包含含有与上述区域中所含的杂质相同或相反的导电型的杂质的一层。

3. 发明授权

US4583122A Imaging display device 失效
标题翻译：成像显示装置
公开(公告)号：US4583122A
公开(公告)日：1986-04-15
申请号：US498134
申请日：1983-05-25
申请人： Junichi Ohwada , Hideaki Kawakami , Makoto Matsui , Eiichi Maruyama
发明人： Junichi Ohwada , Hideaki Kawakami , Makoto Matsui , Eiichi Maruyama
IPC分类号： G02F1/133 , G02F1/135 , G02F1/1368 , H01L27/14 , H01L27/146 , H04N5/30 , H04N5/335 , H04N5/369 , H04N5/372 , H04N5/374
CPC分类号： G02F1/1354 , G02F1/1368
摘要： An imaging display device characterized by comprising a pair of transparent substrates which are arranged in opposition to each other with a predetermined interval therebetween, photoelectric elements which are disposed in a large number between the substrates and in adjacency to one of the substrates and which convert light signals from outside the one substrate into electric signals, and a large number of electrooptic elements which are disposed between the other substrate and the respective photoelectric elements and in a predetermined relationship of correspondence with the photoelectric elements and which generate light signals by utilizing parts of the electric signals of the corresponding photoelectric elements.
摘要翻译：一种成像显示装置，其特征在于包括一对透明基板，它们之间以预定的间隔彼此相对设置，所述光电元件大量设置在所述基板之间并且与所述基板中的一个相邻并且将所述光从一个衬底外部的信号转换为电信号，以及大量电光元件，其设置在另一个衬底和各个光电元件之间，并且以与光电元件对应的预定关系设置，并且通过利用相应光电元件的电信号。

4. 发明授权

US4380557A Method of production of image pickup device 失效
标题翻译：图像拾取装置的制造方法
公开(公告)号：US4380557A
公开(公告)日：1983-04-19
申请号：US287554
申请日：1981-07-28
申请人： Sachio Ishioka , Yasuharu Shimomoto , Yoshinori Imamura , Saburo Ataka , Yasuo Tanaka , Hirokazu Matsubara , Yukio Takasaki , Eiichi Maruyama
发明人： Sachio Ishioka , Yasuharu Shimomoto , Yoshinori Imamura , Saburo Ataka , Yasuo Tanaka , Hirokazu Matsubara , Yukio Takasaki , Eiichi Maruyama
IPC分类号： G03G5/08 , B05D3/02 , B05D3/04 , H01J9/233 , H01L21/205 , H01L31/04 , H01L31/08 , H01L31/10
CPC分类号： H01J9/233
摘要： In preparing an image pickup device by using hydrogen-containing amorphous silicon for a photoconductive layer, a hydrogen-containing amorphous silicon layer is first formed and is then heat-treated at 100.degree. to 300.degree. C. The image pickup characteristics of the amorphous silicon layer are highly improved by this heat treatment. For example, the lag and dark current are reduced and the signal current-target voltage characteristic is improved. Especially excellent improving effects can be obtained when amorphous silicon characterized in that (1) the hydrogen content is 5 to 30 atomic %, (2) the optical forbidden band gap is 1.30 to 1.95 eV and (3) in the infrared absorption spectrum, the component of a wave number of 2000 cm.sup.-1 is observed larger than the component of a wave number of 2100 cm.sup.-1 is subjected to the above-mentioned heat treatment. The adhesion to the substrate is enhanced, and good image pickup characteristics can be obtained.
摘要翻译：在通过使用含氢非晶硅作为光电导层制备图像拾取装置时，首先形成含氢非晶硅层，然后在100℃至300℃下进行热处理。非晶硅的图像拾取特性通过这种热处理高度改善了层。例如，滞后和暗电流降低，信号电流 - 目标电压特性提高。当非晶硅的特征在于：（1）氢含量为5〜30原子％，（2）光学禁带宽为1.30〜1.95eV，（3）在红外吸收光谱中，特别优异的改善效果为观察到比2100cm -1的波数的分量更大的波数为2000cm -1的分量进行上述热处理。增强了与基板的粘附性，并且可以获得良好的图像拾取特性。

5. 发明授权

US4377628A Electrophotographic member with .alpha.-Si and H 失效
标题翻译：具有α-Si和H的电子照相元件
公开(公告)号：US4377628A
公开(公告)日：1983-03-22
申请号：US257346
申请日：1981-04-24
申请人： Sachio Ishioka , Eiichi Maruyama , Yoshinori Imamura , Hirokazu Matsubara , Shinkichi Horigome
发明人： Sachio Ishioka , Eiichi Maruyama , Yoshinori Imamura , Hirokazu Matsubara , Shinkichi Horigome
IPC分类号： G03G5/08 , G03F7/20 , G03G5/082 , H01L31/08 , G03G5/14
CPC分类号： G03F7/70216 , G03F7/707 , G03G5/08221 , G03G5/08235
摘要： Disclosed is an electrophotographic member having an amorphous-silicon photoconductive layer, wherein the distance between a portion in which light illuminating the photoconductor is absorbed therein until its intensity decreases to 1% of that at incidence and the interface of the photoconductor opposite to the light incidence side thereof is at most 5 .mu.m, whereby the residual potential of the photoconductive layer can be reduced.That part of the photoconductive layer constituting the electrophotographic member which is at least 10 nm thick inwardly of the photoconductive layer from the surface thereof to store charges is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..multidot.cm. Further, within such photoconductive layer, a region of amorphous silicon which has an optical forbidden band gap smaller than that of the amorphous silicon forming the surface part is disposed at a thickness of at least 10 nm. By forming the region of the narrower optical forbidden band gap within the photoconductive layer in this manner, the sensitivity of the photoconductive layer to light of longer wavelengths can be enhanced.
摘要翻译：公开了具有非晶硅光电导层的电子照相构件，其中照射光电导体的光被吸收到其中的部分之间的距离，直到其强度降低到其入射时的1％，并且光电导体的与光入射相反的界面一侧为5μm以下，能够降低光电导层的残留电位。构成电子照相构件的光电导元件的从其表面向内存储电荷的至少10nm厚的电子照相构件的部分由非晶硅制成，其具有至少1.6eV的光学禁带宽和电阻率至少1010 OMEGA xcm。此外，在这种光导电层内，具有比形成表面部分的非晶硅的光学禁带宽小的非晶硅区域设置在至少10nm的厚度。通过以这种方式在光导电层内形成较窄的光学禁带区域，可以提高光电导层对较长波长的光的灵敏度。

6. 发明授权

US4365013A Electrophotographic member 失效
标题翻译：电子照相成份
公开(公告)号：US4365013A
公开(公告)日：1982-12-21
申请号：US287633
申请日：1981-07-28
申请人： Sachio Ishioka , Eiichi Maruyama , Yoshinori Imamura , Hirokazu Matsubara , Shinkichi Horigome
发明人： Sachio Ishioka , Eiichi Maruyama , Yoshinori Imamura , Hirokazu Matsubara , Shinkichi Horigome
IPC分类号： G03G5/08 , C23C14/14 , C23C14/35 , G03G5/082 , G03G5/14 , G03G5/147 , H01L31/08
CPC分类号： G03G5/08235 , G03G5/144 , G03G5/14704
摘要： Disclosed is an electrophotographic member having at least a supporter and a photoconductor layer formed mainly of amorphous silicon, characterized in that the amorphous silicon contains at least 50 atomic-% of silicon and at least 1 atomic-% of hydrogen as an average within the layer, and that a part which is at least 10 nm thick from a surface or/and interface of the photoconductor layer toward the interior of the photoconductor layer has a hydrogen content in a range of at least 1 atomic-% to at most 40 atomic-% and an optical forbidden band gap in a range of at least 1.3 eV to at most 2.5 eV and also has the property that an intensity of at least one of peaks having centers at wave numbers of approximately 2,200 cm.sup.-1, approximately 1,140 cm.sup.-1, approximately 1,040 cm.sup.-1, approximately 650 cm.sup.-1, approximately 860 cm.sup.-1 and approximately 800 cm.sup.-1 in an infrared absorption spectrum as are attributed to a bond between silicon and oxygen does not exceed 20% of a higher one of intensities of peaks having centers at wave numbers of approximately 2,000 cm.sup.-1 and approximately 2,100 cm.sup.-1 as are attributed to a bond between silicon and hydrogen. Dark decay characteristics are good, and a satisfactory surface potential can be secured. In addition, the characteristics are stable versus time.
摘要翻译：公开了一种具有至少一种支撑体和主要由非晶硅形成的感光体层的电子照相构件，其特征在于，所述无定形硅含有至少50原子％的硅和至少1原子％的氢在该层内的平均值并且从光电导体层的表面或/和界面朝向光电导体层的内部至少10nm厚的部分具有至少1原子％至至多40原子级的范围内的氢含量，至少1.3eV至至多2.5eV的范围内的光学禁带宽度，并且还具有以波数约2,200cm-1为中心的至少一个峰的强度，约为1140cm- 在归因于硅和氧之间的键的红外吸收光谱中，约1,040cm -1，约650cm -1，约650cm -1，约860cm -1和约800cm -1不超过硅和氧之间的键的20％强度o f峰由于硅和氢之间的键而归因于波数约2,000cm -1和约2,100cm -1的中心。暗衰变特性良好，可以确保令人满意的表面电位。此外，特性与时间相比是稳定的。

7. 发明授权

US4249106A Radiation sensitive screen 失效
标题翻译：辐射敏感屏
公开(公告)号：US4249106A
公开(公告)日：1981-02-03
申请号：US92021
申请日：1979-11-07
申请人： Eiichi Maruyama , Saburo Ataka , Kiyohisa Inao , Yoshinori Imamura , Toshihisa Tsukada , Yukio Takasaki , Tadaaki Hirai
发明人： Eiichi Maruyama , Saburo Ataka , Kiyohisa Inao , Yoshinori Imamura , Toshihisa Tsukada , Yukio Takasaki , Tadaaki Hirai
IPC分类号： H01J9/233 , H01J29/39 , H01J29/45
CPC分类号： H01J29/39 , H01J29/45 , H01J9/233
摘要： A radiation sensitive screen comprising a crystalline silicon substrate which is located on a side of incidence of radiation, and an amorphous silicon film which contains hydrogen and which is located on the opposite side of the substrate to the side of the incidence of the radiation. The radiation sensitive screen of this invention can be manufactured by a simple method, and can achieve a high resolution. It is useful for the target of an image pickup tube, the electron bombardment target of an X-ray fluorescence multiplier tube, etc.
摘要翻译：一种辐射敏感屏幕，其包括位于辐射入射侧的晶体硅衬底和包含氢的位于辐射入射侧的衬底相对侧上的非晶硅膜。本发明的辐射敏感屏可以通过简单的方法制造，并且可以实现高分辨率。对于图像拾取管的目标，X射线荧光倍增管的电子轰击靶等等是有用的

8. 发明授权

US4232219A Photosensor 失效
标题翻译：光电传感器
公开(公告)号：US4232219A
公开(公告)日：1980-11-04
申请号：US15615
申请日：1979-02-27
申请人： Hideaki Yamamoto , Toshihisa Tsukada , Eiichi Maruyama , Hiroya Inagaki
发明人： Hideaki Yamamoto , Toshihisa Tsukada , Eiichi Maruyama , Hiroya Inagaki
IPC分类号： H04N1/028 , G03F3/08 , H04N1/04 , H04N1/46 , H04N1/48 , G02B5/14
CPC分类号： H04N1/486
摘要： A photosensor including a fiber substrate having a light receiving window formed in a surface thereof spaced from an information surface to be read, a bundle of optical fibers disposed in the fiber substrate and positioned in the light receiving window. A plurality of color filters of different characteristics are disposed on an end face of the bundle of optical fibers, and a plurality of arrays of photosensitive elements corresponding to the color filters are also provided. The arrays of photosensitive elements are integrally provided with the fiber substrate and disposed in the region of the end face of the bundle of the optical fibers farthest away from the information surface.
摘要翻译：一种光传感器，包括具有形成在与要读取的信息表面间隔开的表面中的光接收窗口的光纤基板，设置在光纤基板中并位于光接收窗口中的一束光纤。具有不同特性的多个滤色器设置在光纤束的端面上，并且还提供了与滤色器对应的多个感光元件阵列。感光元件阵列与光纤基片一体地设置，并且设置在离信息表面最远的光纤束的端面的区域中。

9. 发明授权

US4556816A Photoelectric device 失效
标题翻译：光电器件
公开(公告)号：US4556816A
公开(公告)日：1985-12-03
申请号：US510910
申请日：1983-07-05
申请人： Yoshinori Imamura , Saburo Ataka , Yukio Takasaki , Yasuo Tanaka , Tadaaki Hirai , Eiichi Maruyama
发明人： Yoshinori Imamura , Saburo Ataka , Yukio Takasaki , Yasuo Tanaka , Tadaaki Hirai , Eiichi Maruyama
IPC分类号： H01J29/45 , H01L31/0248 , H01L31/09 , H04N5/30 , H04N5/335 , H04N5/361 , H04N5/369 , H01J31/00 , H01J31/26
CPC分类号： H01L31/095 , H01J29/456 , H01J9/233
摘要： Disclosed is a photoelectric device having at least a signal electrode, and an amorphous photoconductor layer whose principal constituent is silicon and which contains hydrogen as an indispensable constituent element, the amorphous photoconductor layer being disposed in adjacency to the signal electrode, characterized by comprising a thin layer interposed between the signal electrode and the amorphous photoconductor layer, the thin layer being made of an inorganic material whose principal constituent is at least one compound selected from the group consisting of oxides of at least one element selected from the group that consists of Si, Ti, Al, Mg, Ba, Ta, Bi, V, Ni, Th, Fe, La, Be, Sc and Co, nitrides of at least one element selected from the group that consists of Ga, Si, Mg, Te, Hf, Zr, Nb and B, and halides of at least one element selected from the group that consists of Na, Mg, Li, Ba, Ca and K.
摘要翻译：公开了至少具有信号电极的光电器件和主要成分为硅并且含有氢作为不可或缺的构成元件的非晶质感光体层，非晶体感光体层与信号电极相邻设置，其特征在于，包括薄的层，其被设置在信号电极和非晶体感光体层之间，薄层由主要成分为选自由Si组成的组中的至少一种元素的氧化物组成的组中的至少一种化合物的无机材料制成， Ti，Al，Mg，Ba，Ta，Bi，V，Ni，Th，Fe，La，Be，Sc和Co，选自由Ga，Si，Mg，Te，Hf组成的组中的至少一种元素的氮化物，Zr，Nb和B以及选自由Na，Mg，Li，Ba，Ca和K组成的组中的至少一种元素的卤化物。

10. 发明授权

US4433202A Thin film solar cell 失效
标题翻译：薄膜太阳能电池
公开(公告)号：US4433202A
公开(公告)日：1984-02-21
申请号：US362115
申请日：1982-03-26
申请人： Eiichi Maruyama , Toshikazu Shimada , Yasuhiro Shiraki , Yoshifumi Katayama , Hirokazu Matsubara , Akitoshi Ishizaka , Yoshimasa Murayama , Akira Shintani
发明人： Eiichi Maruyama , Toshikazu Shimada , Yasuhiro Shiraki , Yoshifumi Katayama , Hirokazu Matsubara , Akitoshi Ishizaka , Yoshimasa Murayama , Akira Shintani
IPC分类号： H01L31/04 , H01L31/0368 , H01L31/0392 , H01L31/06
CPC分类号： H01L31/03682 , H01L31/03921 , Y02E10/546
摘要： A thin film solar cell formed on a substrate, comprising at least first and second electrodes, at least one of which is capable of passing light, a silicon film interposed between said first and second electrodes, and at least one junction formed in the silicon film for separating electrons and positive holes when the cell is exposed to light, wherein said silicon film comprises a mixed phase consisting of a polycrystalline phase and an amorphous phase, and includes at least about 50% by volume of fibrous crystalline grains, each of said grains having a maximum bottom diameter of about 1 .mu.m and a minimum height of about 50 nm and having its grain boundaries terminated with a monovalent element.The solar cell has a high photoelectric conversion efficiency comparable to that of a single-crystal solar cell, and can be produced at a low cost.
摘要翻译：一种在基板上形成的薄膜太阳能电池，其至少包括第一和第二电极，其中至少一个能够通过光，插入在所述第一和第二电极之间的硅膜，以及形成在硅膜中的至少一个结用于在电池暴露于光时分离电子和正空穴，其中所述硅膜包括由多晶相和非晶相组成的混合相，并且包括至少约50体积％的纤维状晶粒，每个所述晶粒具有约1μm的最大底部直径和约50nm的最小高度，并且其晶界用一价元素封端。太阳能电池具有与单晶太阳能电池相当的高的光电转换效率，并且可以以低成本生产。

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