会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Heterojunction FET with doubly-doped channel
    • 具有双掺杂沟道的异质结FET
    • US4673959A
    • 1987-06-16
    • US686661
    • 1984-12-27
    • Yasuhiro ShirakiYoshifumi KatayamaYoshimasa MurayamaMakoto MoriokaYasushi SawadaTomoyoshi MishimaTakao KurodaEiichi Maruyama
    • Yasuhiro ShirakiYoshifumi KatayamaYoshimasa MurayamaMakoto MoriokaYasushi SawadaTomoyoshi MishimaTakao KurodaEiichi Maruyama
    • H01L29/812H01L21/338H01L29/205H01L29/423H01L29/778H01L29/80
    • H01L29/42316H01L29/7781H01L29/7786
    • There is disclosed a semiconductor device comprising at least first and second semiconductor layers positioned to form a hetero-junction therebetween, such a hetero-junction being adapted to form a channel, means for controlling carriers, and source and drain areas on opposite edges of the channel, wherein the first and second semiconductor layers formed between the source and drain regions have an area containing only 10.sup.16 cm.sup.-3 or less of an impurity; the first semiconductor layer has a wider forbidden band than that of the second semiconductor layer; and further including at least one semiconductor layer having a higher activation efficiency of impurities than that of the first semiconductor layer, with such at least one semiconductor layer being located on the side of the first semiconductor layer not in contact with the second semiconductor layer. A multi-quantum well structure may be used as the higher impurity activation efficiency semiconductor layer. The electrical resistance in the semiconductor area constituting the source and drain regions can be lowered by utilizing such a higher impurity activation efficiency semiconductor layer.
    • 公开了一种半导体器件,其至少包括第一和第二半导体层,该第一和第二半导体层被定位以在它们之间形成异质结,这样的异质结适于形成沟道,用于控制载流子的装置,以及在其的相对边缘上的源极和漏极区域 沟道,其中形成在源区和漏区之间的第一和第二半导体层具有仅含有1016cm-3或更小的杂质的面积; 第一半导体层具有比第二半导体层更宽的禁带; 并且还包括至少一个具有比第一半导体层高的杂质活化效率的半导体层,这样的至少一个半导体层位于不与第二半导体层接触的第一半导体层的一侧。 可以使用多量子阱结构作为较高的杂质活化效率半导体层。 通过利用这种较高的杂质活化效率的半导体层,可以降低构成源区和漏区的半导体区的电阻。
    • 5. 发明授权
    • Electrophotographic member with .alpha.-Si and H
    • 具有α-Si和H的电子照相元件
    • US4377628A
    • 1983-03-22
    • US257346
    • 1981-04-24
    • Sachio IshiokaEiichi MaruyamaYoshinori ImamuraHirokazu MatsubaraShinkichi Horigome
    • Sachio IshiokaEiichi MaruyamaYoshinori ImamuraHirokazu MatsubaraShinkichi Horigome
    • G03G5/08G03F7/20G03G5/082H01L31/08G03G5/14
    • G03F7/70216G03F7/707G03G5/08221G03G5/08235
    • Disclosed is an electrophotographic member having an amorphous-silicon photoconductive layer, wherein the distance between a portion in which light illuminating the photoconductor is absorbed therein until its intensity decreases to 1% of that at incidence and the interface of the photoconductor opposite to the light incidence side thereof is at most 5 .mu.m, whereby the residual potential of the photoconductive layer can be reduced.That part of the photoconductive layer constituting the electrophotographic member which is at least 10 nm thick inwardly of the photoconductive layer from the surface thereof to store charges is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..multidot.cm. Further, within such photoconductive layer, a region of amorphous silicon which has an optical forbidden band gap smaller than that of the amorphous silicon forming the surface part is disposed at a thickness of at least 10 nm. By forming the region of the narrower optical forbidden band gap within the photoconductive layer in this manner, the sensitivity of the photoconductive layer to light of longer wavelengths can be enhanced.
    • 公开了具有非晶硅光电导层的电子照相构件,其中照射光电导体的光被吸收到其中的部分之间的距离,直到其强度降低到其入射时的1%,并且光电导体的与光入射相反的界面 一侧为5μm以下,能够降低光电导层的残留电位。 构成电子照相构件的光电导元件的从其表面向内存储电荷的至少10nm厚的电子照相构件的部分由非晶硅制成,其具有至少1.6eV的光学禁带宽和电阻率 至少1010 OMEGA xcm。 此外,在这种光导电层内,具有比形成表面部分的非晶硅的光学禁带宽小的非晶硅区域设置在至少10nm的厚度。 通过以这种方式在光导电层内形成较窄的光学禁带区域,可以提高光电导层对较长波长的光的灵敏度。
    • 6. 发明授权
    • Electrophotographic member
    • 电子照相成份
    • US4365013A
    • 1982-12-21
    • US287633
    • 1981-07-28
    • Sachio IshiokaEiichi MaruyamaYoshinori ImamuraHirokazu MatsubaraShinkichi Horigome
    • Sachio IshiokaEiichi MaruyamaYoshinori ImamuraHirokazu MatsubaraShinkichi Horigome
    • G03G5/08C23C14/14C23C14/35G03G5/082G03G5/14G03G5/147H01L31/08
    • G03G5/08235G03G5/144G03G5/14704
    • Disclosed is an electrophotographic member having at least a supporter and a photoconductor layer formed mainly of amorphous silicon, characterized in that the amorphous silicon contains at least 50 atomic-% of silicon and at least 1 atomic-% of hydrogen as an average within the layer, and that a part which is at least 10 nm thick from a surface or/and interface of the photoconductor layer toward the interior of the photoconductor layer has a hydrogen content in a range of at least 1 atomic-% to at most 40 atomic-% and an optical forbidden band gap in a range of at least 1.3 eV to at most 2.5 eV and also has the property that an intensity of at least one of peaks having centers at wave numbers of approximately 2,200 cm.sup.-1, approximately 1,140 cm.sup.-1, approximately 1,040 cm.sup.-1, approximately 650 cm.sup.-1, approximately 860 cm.sup.-1 and approximately 800 cm.sup.-1 in an infrared absorption spectrum as are attributed to a bond between silicon and oxygen does not exceed 20% of a higher one of intensities of peaks having centers at wave numbers of approximately 2,000 cm.sup.-1 and approximately 2,100 cm.sup.-1 as are attributed to a bond between silicon and hydrogen. Dark decay characteristics are good, and a satisfactory surface potential can be secured. In addition, the characteristics are stable versus time.
    • 公开了一种具有至少一种支撑体和主要由非晶硅形成的感光体层的电子照相构件,其特征在于,所述无定形硅含有至少50原子%的硅和至少1原子%的氢在该层内的平均值 并且从光电导体层的表面或/和界面朝向光电导体层的内部至少10nm厚的部分具有至少1原子%至至多40原子级的范围内的氢含量, 至少1.3eV至至多2.5eV的范围内的光学禁带宽度,并且还具有以波数约2,200cm-1为中心的至少一个峰的强度,约为1140cm- 在归因于硅和氧之间的键的红外吸收光谱中,约1,040cm -1,约650cm -1,约650cm -1,约860cm -1和约800cm -1不超过硅和氧之间的键的20% 强度o f峰由于硅和氢之间的键而归因于波数约2,000cm -1和约2,100cm -1的中心。 暗衰变特性良好,可以确保令人满意的表面电位。 此外,特性与时间相比是稳定的。