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1. 发明授权

US5889573A Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and liquid crystal display equipment 失效
标题翻译：薄膜晶体管基板，其制造方法，液晶显示面板和液晶显示设备
公开(公告)号：US5889573A
公开(公告)日：1999-03-30
申请号：US928719
申请日：1997-09-12
申请人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
发明人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
IPC分类号： G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , G09G3/36 , H01L21/3205 , H01L21/336 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786 , H01L29/04
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/136213 , H01L29/4908 , H01L2924/0002
摘要： The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof.In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus-lines.The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).
摘要翻译：本发明涉及使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用TFT基板的液晶显示面板和使用该液晶显示面板的液晶显示设备，更具体地，涉及能够改善其特性的结构和制造方法。在本发明中，Cr或Ta用于栅极端子，铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）和阳极氧化膜由金属构成并且没有缺陷用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一个。在更优选的结构中，阳极氧化膜用于所有栅极绝缘体，用于薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜。本发明还涉及在铝图案上选择性地形成阳极氧化膜的方法。也就是说，在使用正型光致抗蚀剂在铝图案上的期望区域上形成选择性氧化掩模的情况下，在本发明中，在选择性氧化掩模和铝图案之间形成的角度（θ）为： θ= 110-20T（T：正型光致抗蚀剂的膜厚度）。

2. 发明授权

US5781255A Active matrix display device using aluminum alloy in scanning signal line or video signal line 失效
标题翻译：主动矩阵显示装置采用铝合金扫描信号线或视频信号线
公开(公告)号：US5781255A
公开(公告)日：1998-07-14
申请号：US725256
申请日：1996-10-04
申请人： Hideaki Yamamoto , Haruo Matsumaru , Tetsuaki Suzuki , Mitsuo Nakatani , Michio Tsukii , Akira Sasano , Saburo Oikawa , Ryoji Oritsuki
发明人： Hideaki Yamamoto , Haruo Matsumaru , Tetsuaki Suzuki , Mitsuo Nakatani , Michio Tsukii , Akira Sasano , Saburo Oikawa , Ryoji Oritsuki
IPC分类号： G02F1/133 , G02F1/1333 , G02F1/1343 , G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L27/12 , H01L29/78 , H01L29/786
CPC分类号： G02F1/136213 , G02F1/136286 , G02F2001/136295
摘要： An anodized oxide film of Al is formed on a scanning signal line and a gate electrode. Al--Ta is used as material of each of the scanning signal line and gate electrode. The thickness of the anodized oxide film is set to 1,000 angstroms or more. The fabrication yield and reliability can be improved.
摘要翻译：在扫描信号线和栅电极上形成有阳极氧化膜Al。 Al-Ta用作扫描信号线和栅电极的材料。阳极化氧化膜的厚度设定为1000埃以上。可以提高制造产量和可靠性。

3. 发明授权

US5623350A Liquid crystal display with supplemental capacitors and method for manufacturing the same 失效
标题翻译：带补充电容器的液晶显示器及其制造方法
公开(公告)号：US5623350A
公开(公告)日：1997-04-22
申请号：US367929
申请日：1995-01-03
申请人： Genshiro Kawachi , Etsuko Kimura , Kikuo Ono , Yoko Wakui , Akira Sasano
发明人： Genshiro Kawachi , Etsuko Kimura , Kikuo Ono , Yoko Wakui , Akira Sasano
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1362 , G02F1/1368 , H01L27/12
CPC分类号： G02F1/136213
摘要： First pixel electrodes and scan signal electrodes are formed in the same plane, and the first pixel electrodes and video signal electrodes are insulated and separated from each other by gate SiN films. Additional capacitors are formed by second pixel electrodes which are connected to the first pixel electrodes through apertures formed in the gate SiN films and which may be cut by a laser beam, and the scan signal electrodes. Thus, a short circuit defect between the electrodes is prevented, a highly reliable additional capacitor is attained, break of wiring is reduced and an aperture factor can be improved by expanding a width of the first pixel electrode. Thus, a multi-tonality and highly fine liquid crystal display device can be manufactured with a high yield.
摘要翻译：第一像素电极和扫描信号电极形成在同一平面中，并且第一像素电极和视频信号电极通过栅极SiN膜彼此绝缘和分离。附加电容器由第二像素电极形成，第二像素电极通过形成在栅极SiN膜中的孔并且可以被激光束和扫描信号电极切割而连接到第一像素电极。因此，防止电极之间的短路缺陷，获得高可靠性的附加电容器，通过扩大第一像素电极的宽度可以减少布线断裂和开孔率。因此，可以以高产率制造多色调和高精细液晶显示装置。

4. 发明授权

US5359206A Thin film transistor substrate, liquid crystal display panel and liquid crystal display equipment 失效
标题翻译：薄膜晶体管基板，液晶显示面板和液晶显示设备
公开(公告)号：US5359206A
公开(公告)日：1994-10-25
申请号：US674328
申请日：1991-04-15
申请人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
发明人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
IPC分类号： G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , G09G3/36 , H01L21/3205 , H01L21/336 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786 , H01L29/04 , H01L23/48 , H01L27/01 , H01L31/036
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/136213 , H01L29/4908 , H01L2924/0002
摘要： Disclosed is an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. In the TFT substrate, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extending therefrom, for gate electrodes, and for electrodes of thin film capacitors (additional capacitance, storage capacitance), and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulating films for the intersections between the bus-lines. Also disclosed is a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).
摘要翻译： PCT No.PCT / JP90 / 01039 Sec。 371日期：1991年4月15日 102（e）日期1991年4月15日PCT提交1990年8月13日PCT公布。 WO91 / 02999 PCT出版物 1991年3月7日公开。公开是使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用TFT基板的液晶显示面板和使用液体的液晶显示设备水晶显示面板。在TFT基板中，使用Cr或Ta作为栅极端子，铝或主要由铝构成的金属用于从栅极电极延伸的栅极总线，以及用于薄膜电容器的电极（附加电容，存储电容）并且由金属构成并且没有缺陷的阳极氧化膜用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一种。还公开了在铝图案上选择性地形成阳极氧化膜的方法。也就是说，在使用正型光致抗蚀剂在铝图案上的期望区域上形成选择性氧化掩模的情况下，在本发明中，在选择性氧化掩模和铝图案之间形成的角度（θ）为： θ= 110-20T（T：正型光致抗蚀剂的膜厚度）。

5. 发明授权

US4909602A Liquid crystal display and method of driving the same 失效
标题翻译：液晶显示器及其驱动方法
公开(公告)号：US4909602A
公开(公告)日：1990-03-20
申请号：US183620
申请日：1988-04-19
申请人： Yoshiyuki Kaneko , Akira Sasano , Toshihisa Tsukada
发明人： Yoshiyuki Kaneko , Akira Sasano , Toshihisa Tsukada
IPC分类号： G02F1/1368 , G09G3/36
CPC分类号： G02F1/1368 , G09G3/3648 , G09G2320/0214 , G09G2320/0219
摘要： An active matrix liquid crystal display is disclosed in which a better image quality is obtained by specifying a relation between voltages applied to the liquid crystal display. Also, a better holding characteristic is obtained by selecting the channel resistance R.sub.OFF of a thin film transistor in its OFF state to be not smaller than 10.sup.12 .OMEGA..

6. 发明授权

US4430185A Method of producing photoelectric transducers 失效
标题翻译：光电传感器的制造方法
公开(公告)号：US4430185A
公开(公告)日：1984-02-07
申请号：US245749
申请日：1981-03-20
申请人： Yasuharu Shimomoto , Toshihisa Tsukada , Akira Sasano , Yasuo Tanaka , Hideaki Yamamoto , Yukio Takasaki
发明人： Yasuharu Shimomoto , Toshihisa Tsukada , Akira Sasano , Yasuo Tanaka , Hideaki Yamamoto , Yukio Takasaki
IPC分类号： C23C14/00 , C23C16/509 , H01L27/146 , H01L31/20 , H04N5/335 , H04N5/357 , H04N5/369 , H04N5/372 , H04N5/374 , C23C15/00
CPC分类号： C23C14/0036 , C23C16/5096 , H01L27/14665 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： In the method of producing photoelectric transducers having processes for forming a photoconductive layer on a predetermined substrate with an irregular surface by a method of depositing the photoconductive layer in the atmosphere including at least plasma, the predetermined substrate with irregular surface is disposed above a first electrode to which an electrode is opposed, and said photoconductive layer is formed while a negative potential is being applied to the first electrode. This enables the photoconductive layer to be formed without breaks at steps, pinholes and so on due to the irregular surface, and therefore, it is possible to provide good photoelectric transducers with small dark current.
摘要翻译：在具有通过在包括至少等离子体的气氛中沉积光电导层的方法的具有不规则表面的预定基板上形成光电导层的工艺的方法中，具有不规则表面的预定基板设置在第一电极电极相对，并且所述光导电层形成，同时向第一电极施加负电位。这使得光电导层由于不规则的表面而在步骤，针孔等形成而不会发生断裂，因此，可以提供具有小暗电流的良好光电传感器。

7. 发明授权

US4331506A Method of manufacturing target of image pickup tube 失效
标题翻译：摄像管目标的制造方法
公开(公告)号：US4331506A
公开(公告)日：1982-05-25
申请号：US212213
申请日：1980-12-02
申请人： Akira Sasano , Toshio Nakano , Ken Tsutsui , Chushiro Kusano , Tadaaki Hirai , Eiichi Maruyama
发明人： Akira Sasano , Toshio Nakano , Ken Tsutsui , Chushiro Kusano , Tadaaki Hirai , Eiichi Maruyama
IPC分类号： H01J9/233 , H01J31/46 , H01J31/26
CPC分类号： H01J31/46 , H01J9/233
摘要： A method of manufacturing a target of an image pickup tube comprising the steps of: forming a plurality of groups of transparent conductive signal electrodes on a transparent insulating base plate; forming a first layer on at least a portion constituting an image area of the image pickup tube, said first layer being substantially insoluble in etching liquid used for etching an insulating layer to constitute an intermediate layer insulator in a double layered interconnection structure; forming, after formation of said first layer, an insulating layer to constitute said intermediate-layer insulator; removing a predetermined portion of said insulating layer, removing said first layer together with said insulating layer located thereon; forming bus bars; and forming a photoconductive layer on said plurality of groups of the transparent conductive signal electrodes.This invention provides an excellent method for mass production.
摘要翻译：一种制造图像拾取管的目标的方法，包括以下步骤：在透明绝缘基板上形成多组透明导电信号电极; 在构成图像拾取管的图像区域的至少一部分上形成第一层，所述第一层基本上不溶于用于蚀刻绝缘层的蚀刻液，以构成双层互连结构中的中间层绝缘体; 在形成所述第一层之后形成构成所述中间层绝缘体的绝缘层; 去除所述绝缘层的预定部分，与位于其上的所述绝缘层一起去除所述第一层; 形成母线; 以及在所述多个透明导电信号电极组上形成光电导层。本发明提供了一种很好的批量生产方法。

8. 发明授权

US3957609A Method of forming fine pattern of thin, transparent, conductive film 失效
标题翻译：形成薄，透明导电膜精细图案的方法
公开(公告)号：US3957609A
公开(公告)日：1976-05-18
申请号：US505598
申请日：1974-09-12
申请人： Akira Sasano , Kikuo Douta , Mikio Ashikawa
发明人： Akira Sasano , Kikuo Douta , Mikio Ashikawa
IPC分类号： C04B35/457 , H01J9/20 , H01J9/233 , C23C15/00
CPC分类号： H01J9/20 , C04B35/457 , H01J9/233
摘要： A thin film mask having a predetermined pattern is formed directly on a thin, transparent, conductive SnO.sub.2 film formed on a dielectric substrate in order to form a fine pattern of the transparent, conductive film and that part of the transparent conductive film which is not covered by the mask is etched away through the bombardment with ions of gas accelerated under the influence of an RF electric field. Suitable masks include photoresists, aluminum, chromium, and manganese.
摘要翻译：在形成在电介质基板上的薄的透明导电SnO 2膜上直接形成具有预定图案的薄膜掩模，以便形成透明导电膜的精细图案和未被覆盖的透明导电膜的部分通过在RF电场的影响下加速的气体离子通过轰击蚀刻掉掩模。合适的掩模包括光致抗蚀剂，铝，铬和锰。

9. 发明授权

US5672523A Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and liquid crystal display equipment 失效
标题翻译：薄膜晶体管基板，其制造方法，液晶显示面板和液晶显示设备
公开(公告)号：US5672523A
公开(公告)日：1997-09-30
申请号：US451209
申请日：1995-05-26
申请人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
发明人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
IPC分类号： G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , G09G3/36 , H01L21/3205 , H01L21/336 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786 , H01L21/84
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/136213 , H01L29/4908 , H01L2924/0002
摘要： The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. Cr or Ta is used for gate terminals; aluminum or a metal composed mainly of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance); and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, for the anodic oxidation, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .beta..gtoreq.110-20T(T: film thickness of the positive type photoresist). The photoresist is subjected to a heat treatment prior to and after exposure, preferably the after-treatment being performed before developing. The anodic oxidation film is heat-treated after formation, to reduce the leak current.
摘要翻译：本发明涉及使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用该TFT基板的液晶显示面板和使用该液晶显示面板的液晶显示装置。 Cr或Ta用于栅极端子; 铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）; 并且由金属构成并且没有缺陷的阳极氧化膜用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一种。在用正型光致抗蚀剂形成选择性氧化掩模到铝图案上的所需区域时，为了阳极氧化，在选择性氧化掩模和铝图案之间形成的角度（θ）被制成： 20T（T：正型光致抗蚀剂的膜厚）。在曝光之前和之后对光致抗蚀剂进行热处理，优选在显影之前进行后处理。阳极氧化膜在形成后进行热处理，以减少漏电流。

10. 发明授权

US5671027A LCD device with TFTs in which pixel electrodes are formed in the same plane as the gate electrodes with anodized oxide films and before the deposition of the silicon gate insulator 失效
标题翻译：具有TFT的LCD器件，其中像素电极与具有阳极化氧化膜的栅极形成在同一平面中，并且在沉积硅栅绝缘体之前
公开(公告)号：US5671027A
公开(公告)日：1997-09-23
申请号：US509821
申请日：1995-08-01
申请人： Akira Sasano , Kazuo Shirahashi , Yuka Matsukawa , Hideaki Taniguchi , Hideaki Yamamoto , Haruo Matsumaru
发明人： Akira Sasano , Kazuo Shirahashi , Yuka Matsukawa , Hideaki Taniguchi , Hideaki Yamamoto , Haruo Matsumaru
IPC分类号： G02F1/1362 , G02F1/1368 , G02F1/136 , G02F1/1343
CPC分类号： G02F1/1368 , G02F1/136213 , G02F1/13624
摘要： An active matrix liquid crystal display device, with a plurality of thin-film transistors provided over a glass substrate each including an anodized oxide film of aluminum gate electrode, in which transparent pixel electrodes are formed in the same plane as the gate electrodes between the glass substrate and amorphous silicon islands over which source and drain electrodes are provided.
摘要翻译：一种有源矩阵液晶显示装置，其具有设置在玻璃基板上的多个薄膜晶体管，每个薄膜晶体管均包括铝栅电极的阳极化氧化膜，其中透明像素电极形成在与玻璃之间的栅极电极相同的平面中衬底和非晶硅岛，其上设置有源极和漏极。

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