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1. 发明授权

US06825507B2 Semiconductor device having high electron mobility comprising a SiGe/Si/SiGe substrate 失效
标题翻译：具有高电子迁移率的半导体器件包括SiGe / Si / SiGe衬底
公开(公告)号：US06825507B2
公开(公告)日：2004-11-30
申请号：US10346976
申请日：2003-01-21
申请人： Kazuhiro Aihara
发明人： Kazuhiro Aihara
IPC分类号： H01L310328
CPC分类号： H01L29/802 , H01L21/28255 , H01L29/1054 , H01L29/165
摘要： An Si crystal film functioning as a channel region is formed on an SiGe crystal film substrate. Furthermore, an SiGe crystal film functioning as a channel region is formed on the Si crystal film. In addition, on the opposite sides of the SiGe crystal film and the Si crystal film, an Si crystal film functioning as a source/drain region is formed. Moreover, a gate electrode is formed on the SiGe crystal film with a gate insulator film interposed. In accordance with the configuration described above, SiGe crystal film prevents the native oxidation of the Si crystal film. As a result, it is possible to obtain a semiconductor device that solves a problem caused by decrease in a conductivity in the Si crystal film resulting from the native oxidation of a surface of the Si crystal film.
摘要翻译：在SiGe晶体膜基板上形成用作沟道区的Si晶体膜。此外，在Si晶体膜上形成用作沟道区的SiGe晶体膜。此外，在SiGe晶体膜和Si晶体膜的相对侧，形成用作源极/漏极区域的Si晶体膜。此外，在SiGe晶体膜上形成有栅极绝缘膜的栅电极。根据上述结构，SiGe晶体膜可防止Si晶体膜的自然氧化。结果，可以获得一种半导体器件，其解决了由于Si晶体膜的表面的天然氧化而导致的Si晶体膜的导电性降低引起的问题。

2. 发明授权

US06822272B2 Multilayered reflective membrane and gallium nitride-based light emitting element 有权
标题翻译：多层反射膜和氮化镓系发光元件
公开(公告)号：US06822272B2
公开(公告)日：2004-11-23
申请号：US10189767
申请日：2002-07-08
申请人： Tomoya Yanamoto
发明人： Tomoya Yanamoto
IPC分类号： H01L310328
CPC分类号： H01L33/105 , B82Y20/00 , H01L33/32 , H01S5/18308 , H01S5/18341 , H01S5/18361 , H01S5/18369 , H01S5/2009 , H01S5/34333 , H01S2301/173 , H01S2304/04
摘要： A gallium nitride-based multilayered reflective membrane with an excellent crystallinity while keeping a high reflectivity and a gallium nitride-based light emitting element using such a multilayered reflective are provided. The multilayered reflective membrane includes an AlaGa1−aN layer (0
摘要翻译：提供了一种具有优异的结晶性同时保持高反射率的氮化镓基多层反射膜和使用这种多层反射的氮化镓基发光元件。多层反射膜包括厚度为（α1/λ）/（4n1）（λ：入射光波长，n1：反射率）的AlGaAl-AlN层（0

3. 发明授权

US06794690B2 Group III nitride compound semiconductor light-emitting element 失效
标题翻译： III族氮化物化合物半导体发光元件
公开(公告)号：US06794690B2
公开(公告)日：2004-09-21
申请号：US10227448
申请日：2002-08-26
申请人： Toshiya Uemura
发明人： Toshiya Uemura
IPC分类号： H01L310328
CPC分类号： H01L33/40 , H01L33/32
摘要： A Group III nitride compound semiconductor light-emitting element (flip chip type light-emitting element) provided with a p-side electrode and an n-side electrode formed on one surface side, wherein the p-side electrode includes: a first metal layer containing Ag and formed on a p-type semiconductor layer; a protective film with which the first metal layer except a part region is covered; and a second metal layer not containing Ag and formed on the protective film.
摘要翻译：在一个表面侧设置有p侧电极和n侧电极的III族氮化物化合物半导体发光元件（倒装芯片型发光元件），其中p侧电极包括：第一金属层含有Ag并形成在p型半导体层上; 除了部分区域以外的第一金属层被覆盖的保护膜; 以及形成在保护膜上的不含有Ag的第二金属层。

4. 发明授权

US06781211B2 Photodiode having an active region shaped in a convex lens 有权
标题翻译：光电二极管具有形状在凸透镜中的有源区
公开(公告)号：US06781211B2
公开(公告)日：2004-08-24
申请号：US10346315
申请日：2003-01-17
申请人： Hwa-Young Kang , Jung-Kee Lee
发明人： Hwa-Young Kang , Jung-Kee Lee
IPC分类号： H01L310328
CPC分类号： H01L31/035281 , H01L31/02327 , Y02E10/50
摘要： Disclosed is a photodiode with improved light-receiving efficiency and coupling effect with an optical fiber, whose capacitance may be decreased. The inventive photodiode includes a substrate; a buffer layer and a light-absorbing layer laminated in sequence on the substrate; an epitaxial layer formed on the upper surface of the light absorbing layer and having an active region with a surface in a convex lens shape so that it has greater surface area and more effective light-receiving area than an active region defined in a two-dimensional plane, the active region further having a convex surface can harvest light with its convex-lens characteristics; a dielectric layer formed on the upper surface of the epitaxial layer; a first metal electrode formed on an upper surface of the dielectric layer; and, a second metal electrode formed on an under surface of the substrate.
摘要翻译：公开了一种具有光接收效率和与光纤的耦合效应的光电二极管，其光电容可能减小。本发明的光电二极管包括基片; 缓冲层和光吸收层依次层压在基板上; 形成在光吸收层的上表面上的外延层，具有凸形透镜形状的表面的活性区域，使其具有比二维中限定的有源区域更大的表面积和更有效的光接收面积平面，进一步具有凸面的有源区域可以收获其凸透镜特性的光; 形成在所述外延层的上表面上的电介质层; 形成在所述电介质层的上表面上的第一金属电极; 以及形成在所述基板的下表面上的第二金属电极。

5. 发明授权

US06753555B2 DTMOS device having low threshold voltage 有权
标题翻译： DTMOS器件具有低阈值电压
公开(公告)号：US06753555B2
公开(公告)日：2004-06-22
申请号：US10268905
申请日：2002-10-11
申请人： Takeshi Takagi , Akira Inoue
发明人： Takeshi Takagi , Akira Inoue
IPC分类号： H01L310328
CPC分类号： H01L29/1054 , H01L21/84 , H01L27/1203 , H01L29/161 , H01L29/165 , H01L29/7782 , H01L29/783 , H01L29/78615 , H01L29/78648 , H01L29/78687
摘要： A HDTMOS includes a Si substrate, a buried oxide film and a semiconductor layer. The semiconductor layer includes an upper Si film, an epitaxially grown Si buffer layer, an epitaxially grown SiGe film, and an epitaxially grown Si film. Furthermore, the HDTMOS includes an n-type high concentration Si body region, an n− Si region, a SiGe channel region containing n-type low concentration impurities, an n-type low concentration Si cap layer, and a contact which is a conductor member for electrically connecting the gate electrode and the Si body region. The present invention extends the operation range while keeping the threshold voltage small by using, for the channel layer, a material having a smaller potential at the band edge where carriers travel than that of a material constituting the body region.
摘要翻译： HDTMOS包括Si衬底，掩埋氧化物膜和半导体层。半导体层包括上硅膜，外延生长的Si缓冲层，外延生长的SiGe膜和外延生长的Si膜。此外，HDTMOS包括n型高浓度Si体区域，n

6. 发明授权

US06750482B2 Highly conductive semiconductor layer having two or more impurities 有权
标题翻译：具有两种以上杂质的高导电性半导体层
公开(公告)号：US06750482B2
公开(公告)日：2004-06-15
申请号：US10135225
申请日：2002-04-30
申请人： Matthew L. Seaford , Arthur E. Geiss , Wayne Lewis , Larry W. Kapitan , Thomas J. Rogers
发明人： Matthew L. Seaford , Arthur E. Geiss , Wayne Lewis , Larry W. Kapitan , Thomas J. Rogers
IPC分类号： H01L310328
CPC分类号： H01L29/7371 , H01L29/207
摘要： The present invention provides a highly doped semiconductor layer. More specifically, the present invention provides a semiconductor layer that includes at least two impurities. Each impurity is introduced at a level below its respective degradation concentration. In this manner, the two or more impurities provide an additive conductivity to the semiconductor layer at a level above the conductivity possible with any one of the impurities alone, due to the detrimental effects that would be created by increasing the concentration of any one impurity beyond its degradation concentration.
摘要翻译：本发明提供了一种高度掺杂的半导体层。更具体地，本发明提供了包括至少两种杂质的半导体层。每种杂质以低于其各自降解浓度的水平引入。以这种方式，由于通过增加超过任何一种杂质的浓度而产生的有害影响，两种或更多种杂质以高于可能的任何一种杂质的电导率向半导体层提供添加剂导电性。其降解浓度。

7. 发明授权

US06750481B2 Semiconductor laminated substrate, semiconductor crystal substrate and semiconductor device and method of manufacturing the same 失效
标题翻译：半导体层叠基板，半导体晶体基板及半导体装置及其制造方法
公开(公告)号：US06750481B2
公开(公告)日：2004-06-15
申请号：US10098322
申请日：2002-03-15
申请人： Hiroji Kawai
发明人： Hiroji Kawai
IPC分类号： H01L310328
CPC分类号： H01L21/0237 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02642 , H01L21/0265 , H01L29/2003 , H01L29/205 , H01L29/66462 , H01L33/007 , H01L33/0079 , H01L33/20 , H01S5/0207 , H01S5/0213 , H01S5/32341
摘要： A semiconductor crystal layer composed of GaN is grown on a base substrate composed of sapphire sandwiching a separating layer composed of AlN and a buffer layer composed of GaN. The separating layers and the buffer layers are distributed in the form of lines, and a flow-through hole for an etchant is formed in the side of these layers sandwiching an anti-growing film composed of SiO2. Thus, the etchant flows through the flow-through hole, the anti-growing film and the separating layer are etched, and the base substrate is easily isolated.
摘要翻译：在由AlN构成的分离层和由GaN构成的缓冲层的蓝宝石构成的基板上生长由GaN构成的半导体晶体层。分离层和缓冲层以管线的形式分布，并且在夹在由SiO 2组成的抗生长膜的这些层的侧面上形成用于蚀刻剂的流通孔。因此，蚀刻剂流过流通孔，抗生长膜和分离层被蚀刻，并且基底衬底容易隔离。

8. 发明授权

US06720590B2 C implants for improved SiGe bipolar yield 有权
标题翻译： C植入物用于改善SiGe双极产率
公开(公告)号：US06720590B2
公开(公告)日：2004-04-13
申请号：US10338476
申请日：2003-01-08
申请人： Douglas D. Coolbaugh , Kathryn T. Schonenberg
发明人： Douglas D. Coolbaugh , Kathryn T. Schonenberg
IPC分类号： H01L310328
CPC分类号： H01L29/7378 , H01L21/26506 , H01L29/1004 , H01L29/1012 , H01L29/66242 , H01L29/66318
摘要： A method for improving the SiGe bipolar yield as well as fabricating a SiGe heterojunction bipolar transistor is provided. The inventive method includes ion-implanting carbon, C, into at one of the following regions of the device: the collector region, the sub-collector region, the extrinsic base regions, and the collector-base junction region. In a preferred embodiment each of the aforesaid regions include C implants.
摘要翻译：提供了一种改善SiGe双极性产率以及制造SiGe异质结双极晶体管的方法。本发明的方法包括将碳C离子注入到器件的以下区域之一：集电极区域，子集电极区域，非本征基极区域和集电极 - 基极结区域。在优选实施例中，上述每个区域包括C植入物。

9. 发明授权

US06720589B1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06720589B1
公开(公告)日：2004-04-13
申请号：US09396438
申请日：1999-09-15
申请人： Andrew James Shields
发明人： Andrew James Shields
IPC分类号： H01L310328
CPC分类号： B82Y20/00 , B82Y10/00 , G02F1/01708 , G11C7/00 , G11C11/34 , G11C13/04 , G11C2216/08 , H01L27/14609 , H01L27/14679 , H01L29/125 , H01L29/127 , H01L29/7783 , H01L29/788 , H01L29/803 , H01L31/0352 , H01L31/035236 , H01L31/112
摘要： Semiconductor devices are provided which can be configured as optically activated memories or single photon detectors. The devices comprise an active layer with a plurality of quantum dots and an active layer. The devices are configured so that charge stored in the quantum dots affects the transport and/or optical characteristics etc of the active layer. Hence, measuring such a characteristic of the active layer allows variations in the carrier occupancy of the quantum dots to be determined
摘要翻译：提供了可被配置为光学激活的存储器或单个光子检测器的半导体器件。这些器件包括具有多个量子点和有源层的有源层。这些器件被配置为使得存储在量子点中的电荷影响有源层的传输和/或光学特性等。因此，测量有源层的这种特性允许确定量子点的载流子占有率的变化

10. 发明授权

US06696710B2 Heterojunction bipolar transistor (HBT) having an improved emitter-base junction 有权
标题翻译：具有改进的发射极 - 基极结的异质结双极晶体管（HBT）
公开(公告)号：US06696710B2
公开(公告)日：2004-02-24
申请号：US09796180
申请日：2001-02-27
申请人： Nicolas J. Moll , Yu-Min Houng
发明人： Nicolas J. Moll , Yu-Min Houng
IPC分类号： H01L310328
CPC分类号： H01L29/7371 , H01L29/0817
摘要： A heterojunction bipolar transistor (HBT) having a base-emitter junction that exhibits the desirable properties of a GaAsSb/AlInAs interface, but which includes an intermediate layer in the emitter such that the intermediate layer contacts the GaAsSb base and the AlInAs emitter. The intermediate layer is sufficiently thin to be substantially electrically transparent, but sufficiently thick to provide a surface over which to grow the AlInAs emitter. The intermediate layer may be of a material such as InP, which has a bulk lattice constant that matches the lattice constant of the GaAsSb base and the AlInAs emitter. Alternatively, the intermediate layer may be of a material having a lattice constant different than that of the GaAsSb base and the AlInAs emitter, but may be pseudomorphically grown so as to provide an apparent lattice-match to the GaAsSb base and the AlInAs emitter.
摘要翻译：具有基极 - 发射极结的异质结双极晶体管（HBT），其表现出GaAsSb / AlInAs界面的所需性质，但是在发射极中包括中间层，使得中间层接触GaAsSb基极和AlInAs发射极。中间层足够薄以至于基本上是电透明的，但是足够厚以提供在其上生长AlInAs发射体的表面。中间层可以是诸如InP的材料，其具有与GaAsSb基极和AlInAs发射极的晶格常数匹配的体晶格常数。或者，中间层可以是具有与GaAsSb基极和AlInAs发射极的晶格常数不同的晶格常数的材料，但是可以伪造生长以提供与GaAsSb基极和AlInAs发射极的表观晶格匹配。

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