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1. 发明申请

WO1998000860A1 METHOD AND DEVICE FOR HEAT-TREATING SINGLE-CRYSTAL SILICON WAFER, SINGLE-CRYSTAL SILICON WAFER, AND PROCESS FOR PRODUCING SINGLE-CRYSTAL SILICON WAFER 审中-公开
标题翻译：用于加热单晶硅波片，单晶硅波片的方法和装置，以及用于生产单晶硅波片的方法和装置
公开(公告)号：WO1998000860A1
公开(公告)日：1998-01-08
申请号：PCT/JP1997002232
申请日：1997-06-27
申请人： SUMITOMO SITIX CORPORATION , ADACHI, Naoshi , HISATOMI, Takehiro , SANO, Masakazu
发明人： SUMITOMO SITIX CORPORATION
IPC分类号： H01L21/324
CPC分类号： H01L21/67303 , H01L21/3225 , H01L21/324 , H01L21/67309 , Y10S206/832 , Y10S206/833 , Y10T117/1016
摘要： A method for heat-treating a single-crystal silicon wafer by which the number of single-crystal silicon wafers treated in a single heat-treating process is increased and, at the same time, dislocation and slip in a high-temperature heat-treating atmosphere are suppressed at the time of performing various kinds of heat treatment, such as a diffusion heat treatment for forming a DZ layer, a treatment for generating and controlling BMD for giving the IG ability, a heat treatment for improving the withstand voltage of an oxide film by eliminating COP defects on and in the wafers. The wafers are divided into groups of about 10 wafers, the wafers of each group are stacked, and a plurality of groups of wafers are placed horizontally or in a state that the wafers are inclined slightly by an angle of 0.5-5 DEG on a boat which supports the wafers at a plurality of points on the outer peripheries of the wafers. Therefore, as shown in embodiments, various kinds of heat treatment can be applied to the wafers and the wafers are heat-treated uniformly, because dislocation and slip of the wafers are prevented.
摘要翻译：在单一的热处理工序中处理的单晶硅晶片的数量增加的单晶硅晶片的热处理方法增加，同时在高温热处理中发生位错和滑动在进行DZ层的扩散热处理，赋予IG能力的BMD的生成和控制处理等的各种热处理时抑制气氛，提高氧化物的耐电压的热处理通过消除晶片上的和在晶片中的COP缺陷来形成膜。将晶片分成约10个晶片的组，每个组的晶片被堆叠，并且多个晶片组水平放置或者在晶片在船上稍微倾斜0.5-5°的角度的状态其在晶片的外周上的多个点处支撑晶片。因此，如实施例所示，可以对晶片进行各种热处理，并且由于晶片的位错和滑动被阻止，因此均匀地对晶片进行热处理。

2. 发明申请

WO1994000872A1 THERMAL TREATMENT OF A SEMICONDUCTOR WAFER 审中-公开
标题翻译：半导体晶片的热处理
公开(公告)号：WO1994000872A1
公开(公告)日：1994-01-06
申请号：PCT/JP1993000865
申请日：1993-06-25
申请人： SUMITOMO SITIX CORPORATION , HORAI, Masataka , ADACHI, Naoshi , NISHIKAWA, Hideshi , SANO, Masakazu
发明人： SUMITOMO SITIX CORPORATION
IPC分类号： H01L21/324
CPC分类号： H01L21/3003 , H01L21/3221 , Y10S117/906 , Y10S148/003 , Y10S148/022 , Y10S148/024 , Y10S438/909
摘要： It is an object of the present invention to provide a method of manufacturing a semiconductor wafer, whereby deterioration of a micro-roughness in a low temperature range in hydrogen atmospheric treatment, and increase of a resistivity due to outward diffusion of an electrically active impurity in a high temperature range are solved, and in the heat treatment in a hydrogen gas atmosphere, the concentration of gas molecules in atmosphere such as water, oxygen and the like is brought to 5 ppm or less in water molecule conversion, a reaction in which a substrate surface is oxidized unequally and the micro-roughness is deteriorated is suppressed, and furthermore, a same kind of impurity as the electrically active impurity contained in an Si substrate is mixed into the atmosphere, and the outward diffusion of the impurity in the vicinity of the Si substrate surface is prevented to prevent variation of the resistivity.
摘要翻译：本发明的目的是提供一种制造半导体晶片的方法，由此在大气氢处理中在低温范围内的微粗糙度的劣化以及由于电活性杂质的向外扩散引起的电阻率的增加解决了高温范围，在氢气气氛中的热处理中，水分子等氧化物等气氛中的气体分子的浓度在水分子转化率为5ppm以下时，衬底表面被不均匀地氧化并且微粗糙度劣化被抑制，此外，与Si衬底中含有的电活性杂质相同的杂质混入大气中，并且杂质向外扩散防止Si衬底表面防止电阻率的变化。

3. 发明申请

WO1997032059A1 METHOD AND APPARATUS FOR WITHDRAWING SINGLE CRYSTAL 审中-公开
标题翻译：用于取出单晶的方法和装置
公开(公告)号：WO1997032059A1
公开(公告)日：1997-09-04
申请号：PCT/JP1997000594
申请日：1997-02-27
申请人： SUMITOMO SITIX CORPORATION , IZUMI, Teruo
发明人： SUMITOMO SITIX CORPORATION
IPC分类号： C30B15/00
CPC分类号： C30B15/36 , C30B15/22
摘要： A method and apparatus for withdrawing a single crystal. In conventional methods of withdrawing a single crystal, a neck having a small diameter is formed in order to eliminate dislocation introduced when a seed crystal is immersed in a melt. When a single crystal having a large diameter of 12 inches or larger and a great weight is to be withdrawn, however, it cannot be supported to cause it to fall. Also, there is involved a problem that dislocation cannot be eliminated and is propagated to a single crystal when the neck is enlarged in diameter in order to prevent falling. The invention uses a single crystal withdrawing apparatus provided with a laser beam generating device or a non-coherent light generating and introducing device such that after irradiation of a laser beam or a non-coherent light to gradually raise a tip end of a seed crystal in temperature, the seed crystal is immersed in a melt to thereby prevent introduction of dislocation in the seed crystal due to thermal stresses, and thereafter a single crystal is withdrawn without formation of any neck. Therefore, a single crystal having a great weight can be withdrawn. The method and apparatus for withdrawing a single crystal, according to the invention, are used in withdrawing a single crystal ingot such as a large-sized silicon single crystal.
摘要翻译：一种用于取出单晶的方法和装置。在采用单晶退火的常规方法中，形成具有小直径的颈部以便消除将晶种浸入熔体时引入的位错。然而，当具有12英寸或更大直径的大直径和大重量的单晶体被取出时，不能使其下降。此外，存在不能消除位错的问题，并且当颈部的直径扩大时传播到单晶体以防止掉落。本发明使用具有激光束产生装置或非相干光产生和引入装置的单晶取出装置，使得在照射激光束或非相干光之后逐渐升高晶种的尖端将晶种浸入熔融物中，从而防止由于热应力导致晶种中的位错引入，然后在不形成任何颈部的情况下取出单晶。因此，可以取出重量大的单晶。根据本发明的用于取出单晶的方法和装置用于取出诸如大尺寸硅单晶的单晶锭。

4. 发明申请

WO1994028206A1 APPARATUS AND METHOD FOR MANUFACTURING SINGLE-CRYSTAL MATERIAL 审中-公开
标题翻译：装置和制造单晶材料的方法
公开(公告)号：WO1994028206A1
公开(公告)日：1994-12-08
申请号：PCT/JP1994000821
申请日：1994-05-23
申请人： SUMITOMO SITIX CORPORATION , ITO, Makoto
发明人： SUMITOMO SITIX CORPORATION
IPC分类号： C30B15/00
CPC分类号： C30B15/14 , C30B15/00 , Y10T117/1032 , Y10T117/1052 , Y10T117/1056 , Y10T117/1068 , Y10T117/1072
摘要： The apparatus and method are provided for crystal pulling, wherein contamination of crystal is prevented and single-crystal material having an excellent pressure resistance of the oxide film is obtained without spoiling the precise controllability on the oxygen concentration in the crystal. In this apparatus, a heat-resisting and heat-insulating cylindrical member (7) surrounding the crystal-pulling zone is supported from the ceiling or upper part of the side wall of a metallic chamber (6) with a space (h1) between the metallic chamber (6) and the ceiling (6a) thereby to separate the inert gas (30) being supplied from the above into branches of inert gas (33 and 32) flowing inside and outside this member. Further, this method is characterized in that the two flows of inert gas (33 and 32) passing inside and outside the member (7) are joined again.
摘要翻译：提供了用于晶体拉制的装置和方法，其中防止了晶体的污染，并且获得了具有优异的氧化膜耐压性的单晶材料，而不损害对晶体的氧浓度的精确控制性。在该装置中，从金属室（6）的侧壁的天花板或上部支撑有围绕拉晶区域的耐热绝热筒状构件（7），空间（h1）位于金属室金属室（6）和天花板（6a），从而将从上述供给的惰性气体（30）分离成在该构件内部和外部流动的惰性气体（33和32）的分支。此外，该方法的特征在于，通过构件（7）内部和外部的两个惰性气体流（33和32）再次接合。

5. 发明申请

WO1998005063A1 SILICON EPITAXIAL WAFER AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：硅外延晶片及其制造方法
公开(公告)号：WO1998005063A1
公开(公告)日：1998-02-05
申请号：PCT/JP1997002580
申请日：1997-07-25
申请人： SUMITOMO SITIX CORPORATION , FUJIKAWA, Takashi
发明人： SUMITOMO SITIX CORPORATION
IPC分类号： H01L21/322
CPC分类号： C30B29/06 , C30B15/00 , H01L21/3225 , Y10S428/93 , Y10S438/959 , Y10S438/974 , Y10T156/10 , Y10T428/12674 , Y10T428/31663
摘要： An epitaxial wafer which is improved in gettering ability to various kinds of contaminants in the device process of the wafer without performing any process by the EG effect after the wafer is cut and formed is expected by simplifying the processes as much as possible so as to reduce the production cost of the wafer, and a silicon epitaxial wafer which exhibits a sufficient IG effect even in a device manufacturing process at a low temperature of below 1,080 DEG C in the device process and a method for manufacturing the wafer are disclosed. A silicon single crystal is grown by the CZ method in an atmosphere where the oxygen concentration is relatively high and the carbon concentration is intendedly high, and the wafer exhibits an excellent gettering ability without being subjected to the EG processing. When a single crystal is pulled up, the oxygen and carbon concentrations are adequately controlled. After the crystal is cut into wafers, they are annealed for a short time at a low temperature. Thus the number of processings is decreased by not conducting various conventional complex EG processings after the wafer formation, except the processing for imparting the IG ability to the wafers, lowering the manufacturing cost. Therefore, the IG ability can be given to an epitaxial wafer by a low-temperature device process, the EG processing is not needed even when double side mirror polishing is necessary to flatten the surface of the wafer with high precision, and hence a wafer adaptable to high-precision flatness is fabricated.
摘要翻译：通过简化处理尽可能地预期在晶片切割和形成之后通过EG效应在晶片的器件工艺中对各种污染物的吸杂能力提高的外延晶片，这是通过尽可能简化过程而预期的公开了晶片的制造成本以及即使在器件工艺中的低于1080℃的低温下的器件制造工序中表现出足够的IG效应的硅外延片，以及晶片的制造方法。通过CZ法在氧浓度相对高且碳浓度高的气氛中生长硅单晶，并且晶片在不进行EG处理的情况下表现出优异的吸气能力。当单晶被拉起时，氧和碳的浓度被充分控制。将晶体切成晶片后，在低温下短时间退火。因此，除了对晶片赋予IG能力的处理，降低制造成本之外，通过在晶片形成之后不进行各种常规复合EG处理来减少加工次数。因此，通过低温器件工艺可以将IG能力赋予外延晶片，即使需要双面镜面抛光来高精度地平坦化晶片的表面也不需要EG处理，因此晶片适应性制造高精度平面度。

6. 发明申请

WO1997041590A1 METHOD FOR JOINING SILICON SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：加入硅半导体基板的方法
公开(公告)号：WO1997041590A1
公开(公告)日：1997-11-06
申请号：PCT/JP1997001444
申请日：1997-04-24
申请人： SUMITOMO SITIX CORPORATION , NEC CORPORATION , TOMITA, Shinichi , IKEDA, Yasunobu , KIKUCHI, Hiroaki
发明人： SUMITOMO SITIX CORPORATION , NEC CORPORATION
IPC分类号： H01L21/02
CPC分类号： H01L21/2007
摘要： A method for joining silicon semiconductor substrate in which first semiconductor wafers (2, 5 and 9) having specular-finished main surfaces and stuck to second semiconductor wafers (3, 6 and 10), wherein the surfaces of either the first or second semiconductor wafers are rendered hydrophilic, while the surfaces of the other semiconductor wafers are rendered water-repellent, and then the treated main surfaces of the first and second wafers are stuck to each other and heat-treated, thereby reducing the occurrence of voids and contamination of the joint interfaces with contaminants.
摘要翻译：一种用于接合硅半导体衬底的方法，其中具有镜面主要表面并粘附到第二半导体晶片（3,6和10）的第一半导体晶片（2,5和9），其中第一或第二半导体晶片被赋予亲水性，而其他半导体晶片的表面被防水，然后将处理后的第一和第二晶片的主表面彼此粘合并进行热处理，从而减少空隙的发生和污染与污染物的接合界面。

7. 发明申请

WO1997015412A1 BRIGHT METALLIC TITANIUM PARTICLES, METHOD OF MANUFACTURING SAME, BRIGHT COLORING TITANIUM PARTICLES USING SAME, METHOD OF HEATING AND COLORING SAME, AND POWDER COMPOSED OF THESE TITANIUM PARTICLES 审中-公开
标题翻译：明亮的金属钛颗粒，其制造方法，使用其的明亮的色料钛颗粒，加热和着色方法以及这些钛颗粒组成的粉末
公开(公告)号：WO1997015412A1
公开(公告)日：1997-05-01
申请号：PCT/JP1996003122
申请日：1996-10-25
申请人： SUMITOMO SITIX CORPORATION , KAMEOKA, Takeshi , MIZUTANI, Katsuya , MORI, Shigeru , WATANABE, Munetoshi
发明人： SUMITOMO SITIX CORPORATION
IPC分类号： B22F09/04
CPC分类号： C09C1/62 , B22F1/0055 , B22F1/0088
摘要： Bright titanium particles are manufactured which are suitable as a bright material or the like of a metallic film. Spheroidal metallic titanium particles are crushed in one direction in a rolling treatment to be made into particles which have a scale shape to be even at inside and outside flat surface portions thereof and smooth at a peripheral edge of the scale shape. Formed on surfaces of the metallic titanium particles having the scale shape is a film of titanium oxide having a thickness in the range of 25 to 200 nm. Upon formation of the film of titanium oxide, a film of titanium oxide is formed by heating of at most 400 DEG C to have a thickness of 25 nm or more, and then is heated above 400 DEG C so that it can be grown to a thickness required for coloring.
摘要翻译：制造适合作为金属膜的光亮材料等的明亮的钛颗粒。球状金属钛颗粒在滚动处理中在一个方向上被粉碎，以制成具有在其平坦表面部分的平坦表面部分之外的平坦的鳞片形状的颗粒，并且在鳞片形状的周边边缘处是平滑的。在具有鳞片形状的金属钛颗粒的表面上形成厚度在25至200nm范围内的氧化钛膜。在形成氧化钛膜时，通过加热至多400℃形成厚度为25nm以上的钛氧化物膜，然后加热至400℃以上，使其生长至着色所需的厚度。

8. 发明申请

WO1998049373A1 METAL MAGNESIUM ELECTROLYZER 审中-公开
标题翻译：金属镁电解液
公开(公告)号：WO1998049373A1
公开(公告)日：1998-11-05
申请号：PCT/JP1997001490
申请日：1997-04-30
申请人： SUMITOMO SITIX CORPORATION , ALCAN INTERNATIONAL LIMITED , KAMITAHIRA, Takashi
发明人： SUMITOMO SITIX CORPORATION , ALCAN INTERNATIONAL LIMITED
IPC分类号： C25C07/06
CPC分类号： C25C7/06 , C25C3/04
摘要： A multibath metal Mg electrolyzer which produces metal Mg in a plurality of electrolytic cells (1, ..., 1). The current efficiencies of the electrolytic cells (1, ..., 1) are improved and the unit power cost is lowered. In order to send Cl2 gas which is a by-product in the electrolytic cells (1, ..., 1) to a refining apparatus, the gas is sucked from the electrolytic cells (1, ..., 1) by a blower (9) provided in a main pipe (8). Automatic valves (11) are provided in branch pipes (7, ..., 7) which are branched out of the main pipe (8) and to which Cl2 gas is introduced from the electrolytic cells (1, ...,1). The automatic valves (11) are of gate-type and their positioners are of pneumatic driving/controlling type. The suction pressures of Cl2 gas from the electrolytic cells (1, ..., 1) are measured and the openings of the automatic valves (11, ..., 11) are automatically controlled so that the measured pressures may be target values.
摘要翻译：一种在多个电解槽（1，...，1）中产生金属Mg的多层金属Mg电解槽。电解槽（1，...，1）的电流效率提高，单位功率成本降低。为了将作为电解槽（1，...，1）中的副产物的Cl 2气体送入精制装置，通过鼓风机从电解槽（1，...，1）吸出气体（9）设置在主管（8）中。自动阀（11）设置在从主管（8）分支出并从电解槽（1，...，1）引入Cl2气体的支管（7，...，7）中，。自动阀（11）为门式，其定位器为气动驱动/控制型。测量来自电解槽（1，...，1）的Cl 2气体的吸入压力，并自动控制自动阀（11，...，11）的开口，使得测得的压力可以是目标值。

9. 发明申请

WO1998009007A1 METHOD AND APPARATUS FOR PULLING SINGLE CRYSTAL 审中-公开
标题翻译：用于拉伸单晶的方法和装置
公开(公告)号：WO1998009007A1
公开(公告)日：1998-03-05
申请号：PCT/JP1997003015
申请日：1997-08-29
申请人： SUMITOMO SITIX CORPORATION , FUJIWARA, Hideki
发明人： SUMITOMO SITIX CORPORATION
IPC分类号： C30B15/26
CPC分类号： C30B29/06 , C30B15/26 , C30B15/30 , C30B15/32
摘要： In a conventional method of pulling a large-sized single crystal, an expanded portion and a contracted portion are formed on the lower side of a neck, and the contracted portion is engaged with the single crystal, which is then pulled. During the formation of the contracted portion, the diameter thereof is reduced sharply in a usual case. Even when the diameter of this portion is controlled by using an optical measuring means, a fusion ring on the contracted portion which is hidden behind the expanded portion cannot be observed, so that it is difficult to control the diameter of the crystal. A single crystal pulling apparatus used in this method has a complicated structure and is liable to get out of order at high temperature. According to the present invention, a contracted portion is formed under the condition where the diameter thereof can be measured constantly with an optical measuring means. This method uses a single crystal pulling apparatus which is provided with a pressing means which constitutes a single crystal retaining means, and which is adapted to move a locking portion engaged with a contracted portion of the crystal from a standby position to a contracted portion engaging position.
摘要翻译：在拉伸大尺寸单晶的常规方法中，在颈部的下侧形成扩大部分和收缩部分，并且收缩部分与单晶接合，然后将其拉出。在形成收缩部分时，其直径在通常情况下急剧减小。即使通过使用光学测量装置来控制该部分的直径，也不能观察到隐藏在扩展部分之后的收缩部分上的熔合环，因此难以控制晶体的直径。在该方法中使用的单晶拉制装置具有复杂的结构，并且易于在高温下失序。根据本发明，在可以用光学测量装置恒定地测量其直径的条件下形成收缩部分。该方法使用单晶拉制装置，其具有构成单晶保持装置的按压装置，其适于将与晶体的收缩部分接合的锁定部分从待机位置移动到收缩部分接合位置。

10. 发明申请

WO1997029224A1 APPARATUS FOR FORMING A SINGLE CRYSTAL AND METHOD OF FORMING A SINGLE CRYSTAL BY USING THIS APPARATUS 审中-公开
标题翻译：用于形成单晶的装置和使用该装置形成单晶的方法
公开(公告)号：WO1997029224A1
公开(公告)日：1997-08-14
申请号：PCT/JP1997000309
申请日：1997-02-07
申请人： SUMITOMO SITIX CORPORATION , YASUDA, Munehiro , SAKURADA, Shinichi
发明人： SUMITOMO SITIX CORPORATION
IPC分类号： C30B15/00
CPC分类号： C30B15/00 , C30B15/14 , Y10T117/1032 , Y10T117/1064 , Y10T117/1068 , Y10T117/1088
摘要： An apparatus for growing a single crystal by the CZ method. A cylindrical portion (32) of a main chamber (30) of the apparatus for forming a single crystal is permitted to be separated from the apparatus. Parts for constituting a hot zone are held in the cylindrical portion (32). After pulled up, the cylindrical portion (32) is separated from the apparatus and is conveyed into a separate chamber with the parts for constituting the hot zone being held in the cylindrical portion (32). The parts for constituting the hot zone are disassembled, regenerated and assembled in the separate chamber. In the apparatus for forming a single crystal, the cylindrical portion (32) in which the parts for constituting the hot zone have been assembled in the separate chamber, is mounted, and the pull-up of the next time is effected. The time required before the next pull-up is shortened. Amount of dust decreases in the pull-up chamber.
摘要翻译：用于通过CZ方法生长单晶的装置。允许用于形成单晶的装置的主室（30）的圆柱形部分（32）与装置分离。用于构成热区的部件保持在圆筒部（32）中。在拉起之后，圆柱形部分（32）与设备分离并被输送到单独的室中，用于构成热区的部分保持在圆柱形部分（32）中。用于构成热区的部件被拆卸，再生并组装在分开的室中。在用于形成单晶的装置中，安装有用于构成热区的部件的圆筒部（32）组装在分离室中，并且进行下一次的上拉。下一次上拉之前所需的时间缩短。上拉室中的灰尘量减少。

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