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1. 发明申请

WO2015026573A1 HARMONIC TRAP FOR COMMON GATE AMPLIFIER 审中-公开
标题翻译：谐振放大器
公开(公告)号：WO2015026573A1
公开(公告)日：2015-02-26
申请号：PCT/US2014/050719
申请日：2014-08-12
申请人： QUALCOMM INCORPORATED
发明人： RANGARAJAN, Rajagopalan , PATEL, Chirag Dipak
IPC分类号： H03F3/60 , H03F1/56 , H03F1/32
CPC分类号： H04B1/10 , H03F1/3205 , H03F1/565 , H03F3/19 , H03F3/601 , H03F2200/111 , H03F2200/246 , H03F2200/255 , H03F2200/294 , H03F2200/451 , H03F2200/495 , H03F2200/501 , H03F2200/543
摘要： A circuit, a method and an apparatus, are described. A radio frequency, RF, signal received from a transmission line (606) is provided to the source of a transistor (624a) in a common-gate amplification circuit (624). A series resonance (632, 634) connected to the source provides a low impedance path to ground for interfering RF components in the RF signal. The series resonance (632, 634) is tuned to provide a high impedance to a band of frequencies centered on a frequency of interest and to shunt interfering RF components outside the band of frequencies centered on the frequency of interest. The interfering RF components may include a harmonic of the frequency of interest.
摘要翻译：描述了电路，方法和装置。从共用栅极放大电路（624）向晶体管（624a）的源极提供从传输线（606）接收的射频RF信号。连接到源极的串联谐振（632,634）为射频信号中的RF分量提供了一个低阻抗路径。串联谐振（632,634）被调谐以向以感兴趣的频率为中心的频带的频带提供高阻抗，并且以感兴趣的频率为中心的频率带外的干扰RF分量分流。干扰RF分量可以包括感兴趣频率的谐波。

2. 发明申请

WO2013090847A1 MILLIMETER WAVE POWER AMPLIFIER 审中-公开
公开(公告)号：WO2013090847A1
公开(公告)日：2013-06-20
申请号：PCT/US2012/069944
申请日：2012-12-14
申请人： QUALCOMM INCORPORATED
发明人： LIN, Saihua , DING, Yongwang , LEE, Cheol-Woong
IPC分类号： H03F1/08 , H03F1/34 , H03F1/48 , H03F1/52 , H03F1/56 , H03F3/195 , H03F3/60
CPC分类号： H03F1/486 , H03F1/083 , H03F1/342 , H03F1/523 , H03F1/565 , H03F3/195 , H03F3/601 , H03F2200/135 , H03F2200/222 , H03F2200/255 , H03F2200/36 , H03F2200/387 , H03F2200/405 , H03F2200/423
摘要： A millimeter wave power amplifier is disclosed. In an exemplary embodiment, a MM wave power amplifier (300) includes a plurality of amplifier stages (302, 304, 306, 308) coupled together to receive a MM wave input signal and produce an amplified MM wave output signal, and one or more feedback elements (310, 312) coupled across the amplifier stages (302, 304, 306, 308), each feedback element (310, 312) coupled across an odd number of the amplifier stages (302, 304, 306, 308) to increase an operating bandwidth of the power amplifier (300).
摘要翻译：公开了一种毫米波功率放大器。在示例性实施例中，MM波功率放大器（300）包括耦合在一起以接收MM波输入信号并产生放大的MM波输出信号的多个放大器级（302,304,306,308），以及一个或多个耦合在放大器级（302,304,306,308）之间的反馈元件（310,312），每个反馈元件（310,312）跨过奇数个放大器级（302,304,306,308）耦合以增加功率放大器（300）的工作带宽。

3. 发明申请

WO2011111130A1 半導体装置审中-公开
标题翻译： SEMICONDUCTOR APPARATUS
公开(公告)号：WO2011111130A1
公开(公告)日：2011-09-15
申请号：PCT/JP2010/006039
申请日：2010-10-08
申请人：パナソニック株式会社 , 西嶋将明
发明人：西嶋将明
IPC分类号： H03F3/60 , H03F3/68
CPC分类号： H03F3/601 , H01L23/64 , H01L23/66 , H01L2223/665 , H01L2223/6655 , H01L2224/45144 , H01L2224/49175 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H03F1/56 , H03F3/189 , H03F3/24 , H03F3/602 , H03F2200/222 , H03F2200/255 , H03F2200/387 , H03F2200/423 , H01L2924/00
摘要：　半導体装置は、半導体素子１０１と、半導体素子の入力部と接続された分配回路１０２と、半導体素子の出力部と接続された合成回路１０３とを備えている。分配回路は、基板１１０の上に形成され、第１の伝送線路１１９及び第２の伝送線路１２０を含む第１の分配回路部１１２と、第３の伝送線路１２１及び第４の伝送線路１２２を含む第２の分配回路部１１３と、第１の伝送線路と第３の伝送線路との間に接続された第１の抵抗１２６及び第２の抵抗１２７とを有している。第１の抵抗は、第１の伝送線路と第３の伝送線路との間のスペースにおける半導体素子側の位置に形成され、第２の抵抗は、第１の伝送線路と第３の伝送線路との間のスペースにおける半導体素子と反対側の位置に形成されている。
摘要翻译：半导体装置配备有半导体元件101; 连接到半导体元件的输入部分的分配电路102; 以及与半导体元件的输出部连接的合成电路103。分配电路具有形成在基板110上的第一分配电路部分112，其包括第一传输线119和第二传输线120; 包括第三传输线121和第四传输线122的第二分配电路部分113; 连接在第一传输线和第三传输线之间的第一电阻器126和第二电阻器127。第一电阻器形成在第一传输线和第三传输线之间的空间中的半导体元件侧的位置; 第二电阻器形成在第一传输线和第三传输线之间的空间中与半导体元件相反一侧的位置处。

4. 发明申请

WO2009080573A3 MONOLITHICALLY INTEGRATED ANTENNA- AND RECEIVER CIRCUIT FOR THE DETECTION OF TERAHERTZ WAVES 审中-公开
标题翻译：单片集成天线和接收机电路是否太赫兹波的收购
公开(公告)号：WO2009080573A3
公开(公告)日：2009-11-19
申请号：PCT/EP2008067471
申请日：2008-12-12
申请人： UNIV JW GOETHE FRANKFURT MAIN , UNIV SIEGEN , OEJEFORS ERIK , HARING BOLIVAR PETER , ROSKOS HARTMUT , PFEIFFER ULLRICH
发明人： OEJEFORS ERIK , HARING BOLIVAR PETER , ROSKOS HARTMUT , PFEIFFER ULLRICH
IPC分类号： H01L23/66 , G01N21/35 , H01L27/06 , H01L29/78 , H01L31/101 , H01Q9/26 , H01Q23/00 , H03F3/60
CPC分类号： H01L23/66 , H01L27/0203 , H01L27/088 , H01L2223/6677 , H01L2924/0002 , H01L2924/3011 , H01Q1/2283 , H01Q9/285 , H03F1/22 , H03F3/45282 , H03F3/601 , H03F2200/294 , H03F2203/45024 , H01L2924/00
摘要： The present invention relates to a device for detecting millimeter waves, having at least one field effect transistor with a source, a drain, a gate, a gate-source contact, a source-drain channel, and a gate-drain contact. Compared to a similar such device, the problem addressed by the present invention, among others, is that of providing a device which enables the provision of a field effect transistor for detecting the power and/or phase of electromagnetic radiation in the Thz frequency range. In order to create such a device, it is suggested according to the invention, that a device be provided which has an antenna structure wherein the field effect transistor is connected to the antenna structure in such a manner that an electromagnetic signal received by the antenna structure in the THz range is fed into the field effect transistor via the gate-source contact, and wherein the field effect transistor and the antenna structure are arranged together on a single substrate.
摘要翻译：本发明涉及一种用于检测毫米波与具有源极，漏极，栅极，栅极 - 源极触点，源极 - 漏极沟道和栅极 - 漏极接触的至少一个场效应晶体管的装置。相比于本发明的这种装置是特别提供一种装置，其允许以用于检测太赫兹频率范围的功率和/或电磁辐射的相位提供一个场效应晶体管的一个目的。为了提供这样的装置，本发明提出提供一种装置，其包括天线结构，其中所述的场效应晶体管连接到使得经由在栅极 - 源极接触从所述天线结构的电磁信号的接收的太赫兹频率范围的信号的天线结构馈送场效应晶体管，并且其中场效应晶体管和天线结构一起布置在单个衬底上。

5. 发明申请

WO2009130544A1 WIRELESS COMMUNICATION UNIT AND SEMICONDUCTOR DEVICE HAVING A POWER AMPLIFIER THEREFOR 审中-公开
标题翻译：无线通信单元及其功率放大器的半导体器件
公开(公告)号：WO2009130544A1
公开(公告)日：2009-10-29
申请号：PCT/IB2008/053139
申请日：2008-04-22
申请人： FREESCALE SEMICONDUCTOR, INC. , BOUISSE, Gerard
发明人： BOUISSE, Gerard
IPC分类号： H01L23/66 , H01L23/64 , H03F1/56 , H03F3/189
CPC分类号： H01L23/66 , H01L23/642 , H01L24/49 , H01L2223/6644 , H01L2224/49175 , H01L2224/49433 , H01L2924/00014 , H01L2924/01021 , H01L2924/01322 , H01L2924/1305 , H01L2924/14 , H01L2924/19041 , H01L2924/30107 , H01L2924/3011 , H03F3/245 , H03F3/601 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor package device (310) comprises a radio frequency power transistor (330) having an output port operably coupled to a single de-coupling capacitance (340) located within the semiconductor package device. The single de-coupling capacitance (340) is arranged to provide both high frequency decoupling and low frequency decoupling of signals output from the radio frequency power transistor (330).
摘要翻译：半导体封装器件（310）包括射频功率晶体管（330），其具有可操作地耦合到位于半导体封装器件内的单个去耦电容（340）的输出端口。单个解耦电容（340）被布置成提供从射频功率晶体管（330）输出的信号的高频去耦和低频去耦。

6. 发明申请

WO2009060264A1 INTEGRATED CIRCUIT HAVING HARMONIC TERMINATION CIRCUITRY 审中-公开
标题翻译：具有谐波终端电路的集成电路
公开(公告)号：WO2009060264A1
公开(公告)日：2009-05-14
申请号：PCT/IB2007/055383
申请日：2007-11-08
申请人： FREESCALE SEMICONDUCTOR, INC. , CASSAN, Cedric , WATTS, Michael
发明人： CASSAN, Cedric , WATTS, Michael
IPC分类号： H03F3/217 , H03F3/195 , H03F3/60 , H03F1/56 , H03H7/38
CPC分类号： H03F3/217 , H03F1/565 , H03F3/195 , H03F3/601 , H03F2200/387 , H03F2200/391 , H03F2200/402 , H03F2200/423 , H03F2200/451 , H03H7/38 , H03H7/383
摘要： A semiconductor device comprises harmonic termination circuitry (300) for providing harmonic termination on an output path (310) from an output (320) of an active component (305) of an amplifier circuit, the harmonic termination circuitry (300) comprising a third harmonic resonant circuit (340). The third harmonic resonant circuit (340) substantially couples the output path (310) to ground, and is arranged to provide an impedance substantially representative of a short circuit between the output path (310) and ground at a third harmonic frequency. The harmonic termination circuitry (300) further comprises impedance transformer circuitry (350), provided in series along the output path (310) between the output (320) of the active component (305) and the third harmonic resonant circuit (340), the impedance transformer circuitry (350) arranged to transform a zero impedance, provided by the third harmonic resonant circuit (340) at the third harmonic frequency, into an infinite impedance at the third harmonic frequency, as perceived by the output (320) of the active component (305).
摘要翻译：一种半导体器件包括用于从放大器电路的有源部件（305）的输出（320）在输出路径（310）上提供谐波终端的谐波终端电路（300），所述谐波终端电路（300）包括三次谐波谐振电路（340）。三次谐波谐振电路（340）将输出路径（310）基本上耦合到地，并且被布置成提供基本上代表输出路径（310）和第三谐波频率处的接地之间的短路的阻抗。谐波终端电路（300）还包括阻抗变换器电路（350），其沿着有源部件（305）的输出（320）和三次谐波谐振电路（340）之间的输出路径（310）串联设置，阻抗变压器电路（350），其被布置成将由三次谐波频率的三次谐波谐振电路（340）提供的零阻抗变换为在三次谐波频率处的无限阻抗，如由主动的输出（320）所感知的组件（305）。

7. 发明申请

WO2004095691A1 RADIO FREQUENCY LIMITER CIRCUIT 审中-公开
标题翻译：无线电频率限制电路
公开(公告)号：WO2004095691A1
公开(公告)日：2004-11-04
申请号：PCT/US2004/010999
申请日：2004-04-09
申请人： RAYTHEON COMPANY , ADLERSTEIN, Michael, G. , TREMBLAY, John, C.
发明人： ADLERSTEIN, Michael, G. , TREMBLAY, John, C.
IPC分类号： H03F3/60
CPC分类号： H03G11/04 , H03F1/523 , H03F3/601 , H03F2200/211 , H03F2200/258
摘要： A limiter circuit (10) includes a rectification circuit (14) coupled to an input of the limiter circuit to produce a voltage having a predetermined average level. The level is a function of an input signal (RFIN) fed to the input (16) of the limiter circuit (10). A voltage divider circuit (20) is coupled to the rectification circuit (14) for producing an output voltage having a level proportional to the input signal (RAN). An enhancement mode field effect transistor (Z1) has a gate electrode fed by the output voltage produced by the voltage divider circuit (20). The transistor has drain and source electrodes coupled to an output of the limiter circuit and a reference potential, respectively. A transmission line (22) is coupled between the input (16) of the limiter (10) and the output (18) of the limiter circuit (10). The transmission line (22) has an electrical length nl/4, where l is the nominal operating wavelength of the limiter circuit and n is an odd integer.

8. 发明申请

WO02043156A2 SEMICONDUCTOR DEVICE AND EQUIPMENT FOR COMMUNICATION SYSTEM 审中-公开
标题翻译：半导体器件和通信系统设备
公开(公告)号：WO02043156A2
公开(公告)日：2002-05-30
申请号：PCT/JP2001/010192
申请日：2001-11-21
IPC分类号： H01L21/8252 , H01L27/06 , H01L29/20 , H01L29/778 , H03F3/60 , H04M1/00
CPC分类号： H01L27/0605 , H01L21/8252 , H01L29/2003 , H01L29/7785 , H03F3/601 , H03F2200/294
摘要： A HEMT has an InAlAs layer (202), an InGaAs layer (203), a multiple delta -doped InAlAs layer (204) composed of n-type doped layers (204a) and undoped layers (204b) which are alternately stacked, an InP layer (205), a Schottky gate electrode (210), a source electrode (209a), and a drain electrode (209b) on an InP substrate (201). When a current flows in a region (channel region) of the InGaAs layer (203) adjacent the interface between the InGaAs layer (203) and the multiple delta -doped InAlAs layer (204), a breakdown voltage in the OFF state can be increased, while resistance to the movement of carriers passing through the multiple delta -doped InAlAs layer (204) as a carrier supplying layer is reduced.
摘要翻译： HEMT具有InAlAs层（202），InGaAs层（203），由交替堆叠的n型掺杂层（204a）和未掺杂层（204b）组成的多重掺杂InAlAs层（204），InP 层（205），肖特基栅电极（210），源电极（209a）和漏电极（209b）。当电流在与InGaAs层（203）和多δ-掺杂的InAlAs层（204）之间的界面相邻的InGaAs层（203）的区域（沟道区）中流动时，可以增加关断状态下的击穿电压，同时通过作为载流子供应层的多个δ掺杂的InAlAs层（204）的载流子的运动的阻力减小。

9. 发明申请

WO2016109581A3 INTEGRATED CMOS TRANSMIT/RECEIVE SWITCH IN A RADIO FREQUENCY DEVICE 审中-公开
标题翻译：集成的CMOS发送/接收开关，用于无线电频率设备
公开(公告)号：WO2016109581A3
公开(公告)日：2016-12-08
申请号：PCT/US2015067929
申请日：2015-12-29
申请人： SKYWORKS SOLUTIONS INC
发明人： JIN YALIN , MOHTA SETU
IPC分类号： H04B1/44 , H03F1/34 , H04B1/04
CPC分类号： H03F1/565 , H03F1/0222 , H03F1/0227 , H03F3/195 , H03F3/211 , H03F3/213 , H03F3/24 , H03F3/245 , H03F3/601 , H03F3/605 , H03F2200/102 , H03F2200/105 , H03F2200/165 , H03F2200/294 , H03F2200/375 , H03F2200/387 , H03F2200/417 , H03F2200/423 , H03F2200/451 , H03F2200/537 , H03F2200/541 , H04B1/04 , H04B1/123 , H04B1/44 , H04B1/525 , H04B2001/0408
摘要： Embodiments of radio frequency (RF) systems include a transmit/receive switch integrated with one or more power amplifiers and/or other components. The power amplifiers can have transformer-based architectures, and a power amplifier and switch can be integrated onto a single complementary metal oxide semiconductor die.
摘要翻译：射频（RF）系统的实施例包括与一个或多个功率放大器和/或其他组件集成的发射/接收开关。功率放大器可以具有基于变压器的架构，并且功率放大器和开关可以集成到单个互补金属氧化物半导体管芯上。

10. 发明申请

WO2014182362A1 BROADBAND POWER AMPLIFIER HAVING HIGH EFFICIENCY 审中-公开
标题翻译：宽带功率放大器具有高效率
公开(公告)号：WO2014182362A1
公开(公告)日：2014-11-13
申请号：PCT/US2014/018925
申请日：2014-02-27
申请人： RAYTHEON COMPANY
发明人： AUST, Timothy D.
IPC分类号： H03F3/24
CPC分类号： H01F27/40 , H01F27/2823 , H01F27/29 , H03F1/565 , H03F3/193 , H03F3/211 , H03F3/217 , H03F3/2178 , H03F3/245 , H03F3/601 , H03F3/604 , H03F2200/297 , H03F2200/301 , H03F2200/306 , H03F2200/321 , H03F2200/387 , H03F2200/39 , H03F2200/391 , H03F2200/393 , H03F2200/399 , H03F2200/423 , H03F2200/429 , H03F2200/451 , H03F2200/541
摘要： A wideband power amplifier module includes a plurality of switch mode amplifiers and a plurality of impedance amplifier modules. Each switch mode amplifier includes an input to receive an input signal, and an RF output to output an RF power signal. The switch mode amplifier includes at least one semiconductor switch formed from gallium nitride (GaN). Each impedance amplifier module includes an output electrically connected to the RF output of a respective switch mode amplifier. The impedance amplifier module is configured to inject at least one impedance control signal to each RF output.
摘要翻译：宽带功率放大器模块包括多个开关模式放大器和多个阻抗放大器模块。每个开关模式放大器包括用于接收输入信号的输入端和RF输出端以输出RF功率信号。开关模式放大器包括由氮化镓（GaN）形成的至少一个半导体开关。每个阻抗放大器模块包括电连接到相应开关模式放大器的RF输出的输出。阻抗放大器模块被配置为向每个RF输出注入至少一个阻抗控制信号。

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