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1. 发明申请

WO2016053391A1 OVER-MOLD PLASTIC PACKAGED WIDE BAND-GAP POWER TRANSISTORS AND MMICS 审中-公开
标题翻译：超模塑料包装宽带带隙功率晶体管和MMICS
公开(公告)号：WO2016053391A1
公开(公告)日：2016-04-07
申请号：PCT/US2015/032425
申请日：2015-05-26
申请人： CREE, INC.
发明人： WOOD, Simon , MILLIGAN, James, W. , HERMANSON, Chris
IPC分类号： H01L23/433 , H01L23/29 , H01L23/31 , H01L23/495 , H01L23/66
CPC分类号： H01L23/49562 , H01L23/293 , H01L23/3107 , H01L23/4334 , H01L23/66 , H01L2223/6655 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H03F1/565 , H03F3/195 , H03F3/211 , H03F2200/222 , H03F2200/225 , H03F2200/387 , H03F2200/391 , H03F2200/451 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： A transistor package includes a lead frame, a wide band-gap transistor attached to the lead frame, and an over-mold surrounding the lead frame and the wide band-gap transistor. The wide band-gap transistor has a peak output power greater than 150 W when operated at a frequency up to 3.8 GHz. Using an over-mold along with a wide band-gap transistor in the transistor package allows the transistor package to achieve an exceptionally high efficiency, gain, and bandwidth, while keeping the manufacturing cost of the transistor package low.
摘要翻译：晶体管封装包括引线框架，附接到引线框架的宽带隙晶体管和围绕引线框架和宽带隙晶体管的覆盖模块。宽带隙晶体管的工作频率高达3.8 GHz时，峰值输出功率大于150 W。与晶体管封装中的宽带隙晶体管一起使用模具可以使晶体管封装实现极高的效率，增益和带宽，同时保持晶体管封装的制造成本。

2. 发明申请

WO2009002387A3 RF POWER TRANSISTOR PACKAGES WITH INTERNAL HARMONIC FREQUENCY REDUCTION AND METHODS OF FORMING RF POWER TRANSISTOR PACKAGES WITH INTERNAL HARMONIC FREQUENCY REDUCTION 审中-公开
标题翻译：具有内部谐波频率降低的RF功率晶体管封装和形成具有内部谐波频率降低的RF功率晶体管封装的方法
公开(公告)号：WO2009002387A3
公开(公告)日：2009-02-19
申请号：PCT/US2008006722
申请日：2008-05-28
申请人： CREE INC , FARRELL DONALD , WOOD SIMON
发明人： FARRELL DONALD , WOOD SIMON
IPC分类号： H01L23/66 , H03F1/56
CPC分类号： H01L23/66 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/6655 , H01L2224/48227 , H01L2224/49175 , H01L2924/00014 , H01L2924/01006 , H01L2924/01014 , H01L2924/01023 , H01L2924/01033 , H01L2924/01057 , H01L2924/01075 , H01L2924/01082 , H01L2924/10329 , H01L2924/1305 , H01L2924/13063 , H01L2924/13064 , H01L2924/13091 , H01L2924/19041 , H01L2924/19042 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H03F1/565 , H03F3/195 , H03F2200/222 , H03F2200/225 , H03F2200/387 , H03F2200/391 , H03F2200/451 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： A packaged RF power device includes a transistor having a control terminal and an output terminal and configured to operate at a fundamental operating frequency, an RF signal input lead coupled to the control terminal, and an RF signal output lead coupled to the output terminal. A harmonic reducer is coupled to the control terminal and/or the output terminal of the transistor and is configured to provide a short circuit or low impedance path from the control terminal and/or the output terminal to ground for signals at an Nth harmonic frequency of the fundamental operating frequency, where N>1. The device further includes a package that houses the transistor and the harmonic reducer, with the input lead and the output lead extending from the package. Multi-chip packages are also disclosed.
摘要翻译：封装的RF功率器件包括具有控制端子和输出端子并被配置为在基本工作频率下操作的晶体管，耦合到控制端子的RF信号输入引线和耦合到输出端子的RF信号输出引线。谐波减速器耦合到晶体管的控制端子和/或输出端子，并且被配置为提供从控制端子和/或输出端子到地的短路或低阻抗路径，用于在N次谐波频率基本工作频率，其中N> 1。该装置还包括容纳晶体管和谐波减速器的封装，输入引线和输出引线从封装延伸。还公开了多芯片封装。

3. 发明申请

WO2007099622A1 増幅回路审中-公开
标题翻译：放大器电路
公开(公告)号：WO2007099622A1
公开(公告)日：2007-09-07
申请号：PCT/JP2006/303867
申请日：2006-03-01
申请人：富士通株式会社 , 加納英樹
发明人：加納英樹
IPC分类号： H03F1/44
CPC分类号： H03F1/42 , H03F1/223 , H03F3/193 , H03F2200/213 , H03F2200/216 , H03F2200/225 , H03F2200/36 , H03F2200/451 , H03F2200/72
摘要：　入力端子に接続され、ゲートが交流的に接地された第１のトランジスタ（Ｔｒ１）と、第１のトランジスタに対して直列に接続され、ゲートが交流的に接地された第２のトランジスタ（Ｔｒ２）と、第２のトランジスタのゲートに対して直列に接続されるインダクタ及び容量を含む第１の共振回路（１０１）とを有し、第１の共振回路のインダクタ及び／又は容量は可変であることを特徴とする増幅回路が提供される。
摘要翻译：一种放大器电路，包括与输入端子连接并具有以AC方式接地的栅极的第一晶体管（Tr1），与第一晶体管串联连接并具有以AC方式接地的栅极的第二晶体管（Tr2），以及第一谐振电路（101），包括与第二晶体管的栅极串联连接的电感器和电容器。该放大器电路的特征在于，第一谐振电路的电感器和/或电容器是可变的。

4. 发明申请

WO2016020531A1 INTEGRATED 3-WAY DOHERTY AMPLIFIER 审中-公开
标题翻译：集成3路多功放
公开(公告)号：WO2016020531A1
公开(公告)日：2016-02-11
申请号：PCT/EP2015/068270
申请日：2015-08-07
申请人： SAMBA HOLDCO NETHERLANDS B.V.
发明人： MORONVAL, Xavier , BOUNY, Jean-Jacques , BOUISSE, Gerard
IPC分类号： H03F1/02 , H03F3/195 , H03F1/56 , H03F3/24
CPC分类号： H03F1/0288 , H01L23/66 , H01L2223/6611 , H01L2223/6644 , H03F1/565 , H03F3/195 , H03F3/245 , H03F2200/225 , H03F2200/36 , H03F2200/391 , H03F2200/408
摘要： A die is described comprising at least one 3-way Doherty amplifier (100) comprising a main stage (120), a first peak stage (130) and a second peak stage (140). An input network (110) includes a first impedance connected to an input of the first peak stage (130) and providing a -90° phase shift and a second impedance connected to an input of the second peak stage (140) and providing a 90° phase shift. An output network (150) includes a third impedance connected to the output of the first peak stage (130) and providing a 180° phase shift and a fourth impedance connected to the output of the main stage (120) and providing a 90° phase shift.
摘要翻译：描述了包括至少一个包括主级（120），第一峰值级（130）和第二级级（140）的3路Doherty放大器（100）的管芯。输入网络（110）包括连接到第一峰值级（130）的输入并提供-90°相移的第一阻抗和连接到第二峰值级（140）的输入的第二阻抗，并且提供90 °相移。输出网络（150）包括连接到第一峰值级（130）的输出的第三阻抗并且提供与主级（120）的输出连接的180°相移和第四阻抗，并提供90°相位转移。

5. 发明申请

WO2007119208A3 DOHERTY AMPLIFIER 审中-公开
标题翻译： DOHERTY放大器
公开(公告)号：WO2007119208A3
公开(公告)日：2007-12-27
申请号：PCT/IB2007051305
申请日：2007-04-11
申请人： KONINKL PHILIPS ELECTRONICS NV , BLEDNOV IGOR
发明人： BLEDNOV IGOR
IPC分类号： H03F1/07
CPC分类号： H03F3/195 , H03F1/0288 , H03F2200/225 , H03F2200/391
摘要： An integrated Doherty amplifier structure comprises an input bond pad (IBP), and an output bond pad (OBP). A first transistor (T1) forms the peak amplifier stage of the Doherty amplifier and has a control input (G1) to receive a first input signal (ISl) being an input signal of the Doherty amplifier, and has an output (Dl) to supply an amplified first input signal (OS1) at an output of the Doherty amplifier. A second transistor (T2) forms a main amplifier stage of the Doherty amplifier and has a control input (G2) to receive a second input signal (IS2) and has an output (D2) to supply an amplified second input signal (0S2). The first input signal (ISl) and the second input signal (IS2) have a 90° phase offset. A first bond wire (BW1) forms a first inductance (L1), and extends in a first direction, and is arranged between the input bond pad (IBP) and the control input (G1) of the first transistor (T1). A second bond wire (B W2) forms a second inductance (L2), and extends in the first direction, and is arranged between the output bond pad (OBP) and the output (D1) of the first transistor (T1). A third bond wire (B W3) forms a third inductance (L3) and extends in a second direction substantially perpendicular to the first direction, and is arranged between the output (D1) of the first transistor (T1) and the output (D2) of the second transistor (T2).
摘要翻译：集成的Doherty放大器结构包括输入接合焊盘（IBP）和输出接合焊盘（OBP）。第一晶体管（T1）形成Doherty放大器的峰值放大器级，并具有控制输入（G1），以接收作为Doherty放大器的输入信号的第一输入信号（IS1），并具有输出（D1）在Doherty放大器的输出处的放大的第一输入信号（OS1）。第二晶体管（T2）形成Doherty放大器的主放大器级，并具有用于接收第二输入信号（IS2）的控制输入（G2），并且具有用于提供放大的第二输入信号（0S2）的输出（D2）。第一输入信号（IS1）和第二输入信号（IS2）具有90°相位偏移。第一接合线（BW1）形成第一电感（L1），并且沿第一方向延伸，并且布置在第一晶体管（T1）的输入接合焊盘（IBP）和控制输入端（G1）之间。第二接合线（B W2）形成第二电感（L2），并且在第一方向上延伸，并且布置在第一晶体管（T1）的输出接合焊盘（OBP）和输出（D1）之间。第三接合线（B W3）形成第三电感（L3）并且在基本上垂直于第一方向的第二方向上延伸，并且布置在第一晶体管（T1）的输出（D1）和输出（D2）之间，的第二晶体管（T2）。

6. 发明申请

WO2006123289A3 INTEGRATED DOHERTY TYPE AMPLIFIER ARRANGEMENT WITH HIGH POWER EFFICIENCY 审中-公开
标题翻译：集成式DOHERTY型放大器布置，具有高功率效率
公开(公告)号：WO2006123289A3
公开(公告)日：2007-02-15
申请号：PCT/IB2006051535
申请日：2006-05-16
申请人： KONINKL PHILIPS ELECTRONICS NV , BLEDNOV IGOR
发明人： BLEDNOV IGOR
IPC分类号： H03F1/02 , H03F1/56 , H03F3/195
CPC分类号： H03F3/195 , H01L2224/48091 , H01L2224/4813 , H03F1/0288 , H03F1/565 , H03F2200/192 , H03F2200/198 , H03F2200/225 , H01L2924/00014
摘要： The present invention relates to an integrated Doherty type amplifier arrangement and an amplifying method for such an arrangement, wherein a lumped element hybrid power divider (12) is provided for splitting input signals of main and peak amplifier stages (20, 30, 40) at predetermined phase shifts and non-equal division rates and at least one wideband lumped element artificial line (Zl, Z2) combined with wideband compensation circuit for receiving said first amplified signal and for applying said predetermined phase shift to said first amplified signal and its higher harmonics. Thereby, the low gain of the peak amplifier is compensated by providing the non-equal power splitting at the input. Moreover, the use of the lumped element hybrid power divider leads to an improved isolation between the input ports of the main and peak amplifiers decreasing final distortions of the output signal.
摘要翻译：本发明涉及一种用于这种布置的集成Doherty型放大器装置和放大方法，其中提供了集总元件混合功率分配器（12），用于将主放大器级（20,30,40）的输入信号分离在与宽带补偿电路组合的至少一个宽带集总元件人造线路（Z1，Z2），用于接收所述第一放大信号并将所述预定相移应用于所述第一放大信号及其高次谐波。因此，通过在输入端提供不相等的功率分配来补偿峰值放大器的低增益。此外，集总元件混合功率分配器的使用导致主和峰值放大器的输入端口之间的改进的隔离减小了输出信号的最终失真。

7. 发明申请

WO2007003224A1 COMPENSATION FOR PARASITIC COUPLING BETWEEN RF OR MICROWAVE TRANSISTORS IN THE SAME PACKAGE 审中-公开
标题翻译：相同包装中的RF或微波晶体管之间的对偶耦合补偿
公开(公告)号：WO2007003224A1
公开(公告)日：2007-01-11
申请号：PCT/EP2005/010044
申请日：2005-07-05
申请人： FREESCALE SEMICONDUCTOR, INC. , BOUNY, Jean Jacques , PEYROT, Pascal
发明人： BOUNY, Jean Jacques , PEYROT, Pascal
IPC分类号： H03F1/14 , H03F1/32 , H03F3/193 , H01L23/66
CPC分类号： H01L23/66 , H01L2924/0002 , H03F1/083 , H03F1/14 , H03F1/3205 , H03F1/565 , H03F3/195 , H03F2200/216 , H03F2200/225 , H03F2200/391 , H03F2200/451 , H01L2924/00
摘要： Parasitic coupling effects between RF or microwave transistors (TR1,TR2) provided in a common package (P) are compensated by connecting one or more capacitors (CC1,CC2) between the transistors. By connecting the capacitor(s) at a location that corresponds to the site of the coupling, the compensation is effective over a wide frequency band. This coupling compensation makes it feasible to provide, in a common package, RF or microwave transistors intended to operate in quadrature, thereby improving performance matching and operating efficiency of the overall device (notably, RF amplifier).
摘要翻译：在公共封装（P）中提供的RF或微波晶体管（TR1，TR2）之间的寄生耦合效应通过连接晶体管之间的一个或多个电容（CC1，CC2）来补偿。通过将电容器连接在与耦合部位对应的位置处，补偿在宽频带上有效。这种耦合补偿使得可以在公共封装中提供旨在正交工作的RF或微波晶体管，从而提高整个器件（特别是RF放大器）的性能匹配和工作效率。

8. 发明申请

WO2005078916A1 PROGRAMMABLE RADIO TRANSCEIVER 审中-公开
标题翻译：可编程无线收发器
公开(公告)号：WO2005078916A1
公开(公告)日：2005-08-25
申请号：PCT/US2005/004279
申请日：2005-02-10
申请人： BITWAVE SEMICONDUCTOR , CYR, Russell, J. , DAWE, Geoffrey, C.
发明人： CYR, Russell, J. , DAWE, Geoffrey, C.
IPC分类号： H03C3/22
CPC分类号： H03F1/26 , H01L23/66 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2224/05554 , H01L2224/05599 , H01L2224/48091 , H01L2224/48227 , H01L2224/484 , H01L2224/49171 , H01L2224/49175 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/01032 , H01L2924/01033 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01078 , H01L2924/01082 , H01L2924/01083 , H01L2924/014 , H01L2924/12034 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/1461 , H01L2924/15153 , H01L2924/15157 , H01L2924/15165 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H03B5/1215 , H03B5/1228 , H03B5/1243 , H03B5/1265 , H03B5/1293 , H03B2201/0208 , H03B2201/0266 , H03C3/225 , H03D3/007 , H03F1/0205 , H03F1/08 , H03F1/223 , H03F1/3294 , H03F3/191 , H03F3/195 , H03F3/4521 , H03F3/60 , H03F2200/111 , H03F2200/225 , H03F2200/294 , H03F2200/331 , H03F2200/366 , H03F2200/372 , H03F2200/391 , H03F2200/429 , H03F2200/543 , H03F2200/78 , H03F2203/45256 , H03G3/3068 , H03J2200/10 , H03L7/099 , H03L7/10 , H03L7/185 , H04B1/006 , H04B1/40 , H04W24/00 , H04W80/00 , H04W88/02 , H01L2924/00011 , H01L2224/45099 , H01L2924/00
摘要： A fully integrated, programmable mixed-signal radio transceiver comprising a radio frequency integrated circuit (RFIC) which is frequency and protocol agnostic with digital inputs and outputs, the radio transceiver being programmable and configurable for multiple radio frequency bands and standards and being capable of connecting to many networks and service providers. The RFIC includes a tunable resonant circuit that includes a transmission line having an inductance, a plurality of switchable capacitors configured to be switched into and out of the tunable resonant circuit in response to a first control signal, and at least one variable capacitor that can be varied in response to a second control signal, wherein a center resonant frequency of the resonant circuit is electronically tunable responsive to the first and second control signals that control a first capacitance value of the plurality of switchable capacitors and a second capacitance value of the at least one variable capacitor.
摘要翻译：一种完全集成的可编程混合信号无线电收发器，包括射频集成电路（RFIC），其频率和协议与数字输入和输出无关，无线电收发器可编程并可配置用于多个无线电频带和标准，并且能够连接到许多网络和服务提供商。 RFIC包括可调谐谐振电路，其包括具有电感的传输线，响应于第一控制信号被配置为切换到可调谐谐振电路中的多个可切换电容器，以及至少一个可变电容器，其可以是响应于第二控制信号而变化，其中响应于控制多个可切换电容器的第一电容值的第一和第二控制信号而电谐振电路的中心谐振频率和至少该第二电容值的第二电容值一个可变电容器。

9. 发明申请

WO2017091298A1 CURRENT MIRROR 审中-公开
标题翻译：现在的镜子
公开(公告)号：WO2017091298A1
公开(公告)日：2017-06-01
申请号：PCT/US2016/056624
申请日：2016-10-12
申请人： QUALCOMM INCORPORATED
发明人： TALWALKAR, Niranjan
IPC分类号： H03F3/193 , H03F3/24 , H03F3/45 , H03F1/02 , H03F1/56
CPC分类号： H03F1/0205 , H03F1/0266 , H03F1/565 , H03F3/193 , H03F3/21 , H03F3/245 , H03F3/45179 , H03F3/45475 , H03F2200/06 , H03F2200/09 , H03F2200/102 , H03F2200/15 , H03F2200/165 , H03F2200/181 , H03F2200/216 , H03F2200/222 , H03F2200/225 , H03F2200/228 , H03F2200/241 , H03F2200/42 , H03F2200/451 , H03F2200/471 , H03F2200/61 , H03F2200/91 , H03F2200/99
摘要： A current-mode power amplifier is disclosed. In some embodiments, the power amplifier may include a first cascode transistor pair including a first transfer function coupled to a second cascode transistor pair including a second transfer function. The first transfer function may be an inverse of the second transfer function. The current-mode power amplifier may also include an inductive-capacitive (LC) resonant circuit to reduce the effects of gate capacitances of the first cascode transistor pair and the second cascode transistor pair. In some embodiments, the current-mode power amplifier may include a bias current controller. The bias current controller may adjust transistor bias currents based, at least in part, on an input signal received by the current-mode power amplifier.
摘要翻译：公开了一种电流模式功率放大器。在一些实施例中，功率放大器可以包括第一共源共栅晶体管对，其包括耦合到包括第二传输函数的第二共源共栅晶体管对的第一传递函数。第一传递函数可以是第二传递函数的逆函数。电流模式功率放大器还可以包括电感电容（LC）谐振电路，以减小第一共源共栅晶体管对和第二共源共栅晶体管对的栅极电容的影响。在一些实施例中，电流模式功率放大器可以包括偏置电流控制器。偏置电流控制器可以至少部分地基于由电流模式功率放大器接收的输入信号来调整晶体管偏置电流。

10. 发明申请

WO2016183516A1 HIGH GAIN RF POWER AMPLIFIER WITH NEGATIVE CAPACITOR 审中-公开
标题翻译：具有负电容器的高增益射频功率放大器
公开(公告)号：WO2016183516A1
公开(公告)日：2016-11-17
申请号：PCT/US2016/032531
申请日：2016-05-13
申请人： RFAXIS, INC.
发明人： GORBACHOV, Oleksandr , ZHANG, Lisette L. , MUSIOL, Lothar
IPC分类号： H04B1/04 , H03H7/38 , H03F3/20 , H03F1/56
CPC分类号： H03F3/21 , H03F1/34 , H03F1/342 , H03F1/565 , H03F3/191 , H03F3/193 , H03F3/195 , H03F3/45475 , H03F2200/144 , H03F2200/15 , H03F2200/171 , H03F2200/225 , H03F2200/294 , H03F2200/369 , H03F2200/372 , H03F2200/391 , H03F2200/451 , H03F2203/45222 , H03F2203/45526 , H03H11/481
摘要： A radio frequency (RF) power amplifier circuit includes an input and an output. A power amplifier transistor has a first terminal connected to the input, a second terminal connected to the output, and a third terminal defined by a degeneration inductance. A first capacitor is connected to the third terminal of the power amplifier transistor, along with a negative capacitance circuit connected in series with the first capacitor. The negative capacitance and the first capacitor define a series resonance at a predefined operating frequency band, which shunts the degeneration inductance of the third terminal.
摘要翻译：射频（RF）功率放大器电路包括输入和输出。功率放大器晶体管具有连接到输入的第一端子，连接到输出端的第二端子和由退化电感限定的第三端子。第一电容器连接到功率放大器晶体管的第三端子以及与第一电容器串联连接的负电容电路。负电容和第一电容器在预定义的工作频带定义串联谐振，其分流第三端子的退化电感。

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