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1. 发明申请

WO2014145107A1 SILICON MATERIALS FROM THE PROCESSING OF LIQUID SILANES AND HETEROATOM ADDITIVES 审中-公开
标题翻译：来自液体硅烷和异辛烯添加剂加工的硅材料
公开(公告)号：WO2014145107A1
公开(公告)日：2014-09-18
申请号：PCT/US2014/029789
申请日：2014-03-14
申请人： NDSU RESEARCH FOUNDATION
发明人： BOUDJOUK, Philip , SRINIVASAN, Guruvenket , DAI, Xuliang , HOEY, Justin , ANDERSON, Kenneth , FROHLICH, Matthew
IPC分类号： C01B33/04 , C01B33/149
CPC分类号： C09D11/02 , B05D1/005 , B05D3/06 , C08K3/34 , C08K5/50 , C08K5/56 , C23C16/24 , C23C16/4486 , C23C18/122 , C23C18/14 , H01L21/02123 , H01L21/02211 , H01L21/02282 , H01L21/02345
摘要： Methods for forming silicon thin films and structures with incorporated metals, non-metals, and combinations thereof, liquid precursor compositions useful in such methods, and silicon thin films and structures with embedded heteroatom(s) are described. The compositions are generally liquid at ambient temperature and are comprised of liquid silane(s) and have metal and/or non-metal additives. Metal and non-metal sources include organometallic and organic compounds, respectively. The compositions may also contain a solvent. The compositions may be processed by printing, coating, or spraying onto a substrate and subjected to UV, thermal, IR, and/or laser treatment to form silicon films or structures with embedded heteroatom(s).
摘要翻译：描述了用于形成硅薄膜的方法和具有掺入的金属，非金属及其组合的结构，用于这种方法的液体前体组合物，以及具有嵌入杂原子的硅薄膜和结构。组合物在环境温度下通常是液体，并且由液态硅烷组成并具有金属和/或非金属添加剂。金属和非金属源分别包括有机金属和有机化合物。组合物还可以含有溶剂。组合物可以通过印刷，涂布或喷涂在基材上进行处理，并进行UV，热，IR和/或激光处理以形成具有嵌入杂原子的硅膜或结构。

2. 发明申请

WO2014139795A1 METHODS FOR PROVIDING SPACED LITHOGRAPHY FEATURES ON A SUBSTRATE BY SELF-ASSEMBLY OF BLOCK COPOLYMERS 审中-公开
标题翻译：通过块状共聚物自组装提供基板上的间距平面特征的方法
公开(公告)号：WO2014139795A1
公开(公告)日：2014-09-18
申请号：PCT/EP2014/053694
申请日：2014-02-26
申请人： ASML NETHERLANDS B.V.
发明人： FINDERS, Jozef , WUISTER, Sander , VAN DER HEIJDEN, Eddy , BOOTS, Henri
IPC分类号： B81C1/00 , G03F7/20
CPC分类号： H01L21/76816 , B81C1/00031 , B81C2201/0149 , B82Y40/00 , G03F7/0002 , G03F7/2002 , G03F7/2004 , H01L21/02345 , H01L21/268 , H01L21/31058 , H01L21/31133
摘要： A method of forming a plurality of regularly spaced lithography features, e.g. contact holes, including: providing a trench on a substrate, the trench having opposing side-walls and a base, with the side-walls having a width therebetween, wherein the trench is formed by photolithography including exposing the substrate using off-axis illumination whereby a modulation is provided to the side-walls of the trench; providing a self-assemblable block copolymer having first and second blocks in the trench; causing the self-assemblable block copolymer to self-assemble into an ordered layer in the trench, the layer having first domains of the first block and second domains of the second block; and selectively removing the first domain to form at least one regularly spaced row of lithography features having the second domain along the trench.
摘要翻译：一种形成多个规则间隔的光刻特征的方法，例如。接触孔，包括：在衬底上提供沟槽，所述沟槽具有相对的侧壁和底座，其中所述侧壁之间具有宽度，其中所述沟槽通过光刻形成，包括使用离轴照明曝光所述衬底，由此向沟槽的侧壁提供调制; 提供在沟槽中具有第一和第二嵌段的自组装嵌段共聚物; 使自组装嵌段共聚物自组装成沟槽中的有序层，该层具有第一嵌段的第一区域和第二嵌段的第二区域; 以及选择性地移除所述第一区域以形成沿着所述沟槽具有所述第二结构域的至少一个规则间隔的光刻特征行。

3. 发明申请

WO2012053433A1 アルミナ膜形成方法审中-公开
标题翻译：形成铝膜的方法
公开(公告)号：WO2012053433A1
公开(公告)日：2012-04-26
申请号：PCT/JP2011/073622
申请日：2011-10-14
申请人： JSR株式会社 , 鄭康巨 , 山本雅浩 , 酒井達也
发明人：鄭　康巨 , 山本　雅浩 , 酒井　達也
IPC分类号： H01L21/316 , C01F7/30 , C07F5/06 , H01L21/8242 , H01L27/108
CPC分类号： H01L21/02178 , C23C18/1216 , C23C18/1225 , C23C18/1229 , C23C18/1291 , C23C18/14 , H01L21/02282 , H01L21/02337 , H01L21/02345 , H01L21/02348
摘要：　膜厚が大きい場合であっても、アルミニウムの酸化を十分に行うことができるアルミナ膜形成方法を提供する。　（ａ）基体上に、アルミニウム化合物及び有機溶媒を含有するアルミナ膜形成用組成物を塗布し、塗膜を形成する工程、（ｂ）工程（ａ）で形成した塗膜から有機溶媒を除去する工程、及び、（ｃ）工程（ｂ）で得られた塗膜に、水及びアルコールから選ばれる少なくとも一種の存在下で、熱処理および光照射処理から選ばれる少なくとも一種の処理を施す工程、を含むアルミナ膜形成方法。
摘要翻译：提供一种形成氧化铝膜的方法，即使在膜厚的情况下也可以进行铝的充分氧化。形成氧化铝膜的方法包括：（a）将其中含有铝化合物和有机溶剂的用于氧化铝膜形成的组合物施加到基底上从而在其上形成涂膜的步骤; （b）从步骤（a）中形成的涂膜除去有机溶剂的步骤; 和（c）在步骤（b）中得到的涂膜在选自水和醇中的至少一种物质的存在下进行热处理和/或光照射的步骤。

4. 发明申请

WO2003023842A1 低誘電率膜の成膜方法および成膜装置並びにその膜を用いた電子装置审中-公开
标题翻译：使用薄膜形成低容许性薄膜和电子器件的方法和装置
公开(公告)号：WO2003023842A1
公开(公告)日：2003-03-20
申请号：PCT/JP2002/009227
申请日：2002-09-10
申请人：株式会社渡邊商行 , 杉野隆 , 楠原昌樹 , 梅田優
发明人：杉野隆 , 楠原昌樹 , 梅田優
IPC分类号： H01L21/314
CPC分类号： H01L21/02112 , C23C16/30 , C23C16/36 , H01L21/02345 , H01L21/02348 , H01L21/318 , H01L21/76801 , H01L21/76828 , H01L21/76829 , H01L21/76835
摘要： A method for forming a film having a low permittivity, characterized in that it comprises the steps of generating a plasma in a film forming chamber, reacting nitrogen atoms with boron and carbon in the film forming chamber to form a boron-carbon-nitrogen film on a substrate, and then irradiating the resulting film with a light. The method allows the formation of a thin boron-carbon-nitrogen film exhibiting a reduced permittivity.
摘要翻译：一种形成具有低介电常数的膜的方法，其特征在于包括以下步骤：在成膜室中产生等离子体，在成膜室中使氮原子与硼和碳反应，形成硼碳氮膜基板，然后用光照射所得的膜。该方法允许形成具有降低的介电常数的薄硼碳 - 氮膜。

5. 发明申请

WO02043131A1 TANTALUM OXIDE FILM, USE THEREOF, AND METHOD AND COMPOSITION FOR FORMING THE SAME 审中-公开
标题翻译：氧化钽膜，其用途及其形成方法和组合物
公开(公告)号：WO02043131A1
公开(公告)日：2002-05-30
申请号：PCT/JP2001/009739
申请日：2001-11-07
IPC分类号： C01G35/00 , C23C18/12 , H01L21/314 , H01L21/316
CPC分类号： H01L21/02183 , C01G35/00 , C01P2002/85 , C01P2002/86 , C01P2004/80 , C01P2006/40 , C01P2006/80 , C23C18/1216 , C23C18/14 , H01L21/02205 , H01L21/02282 , H01L21/02337 , H01L21/02345 , H01L21/316
摘要： A composition and method for forming a high-quality tantalum film which is suitable for use as, e.g., an insulating film for capacitors. The composition for tantalum oxide film formation comprises: at least one tantalum compound selected from the group consisting of products of the reaction of a tantalum alkoxide with a compound reactive therewith and hydrolyzates of the reaction products; and a solvent. The method for tantalum oxide film formation comprises applying the composition to a substrate and heating it.
摘要翻译：用于形成适合用作例如电容器绝缘膜的高品质钽膜的组合物和方法。氧化钽膜形成用组合物包括：至少一种钽化合物，其选自钽醇盐与其反应性化合物的反应产物和反应产物的水解产物; 和溶剂。氧化钽膜形成方法包括将组合物施加到基底并加热。

6. 发明申请

WO1992019011A1 APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：装置和制造半导体器件的方法
公开(公告)号：WO1992019011A1
公开(公告)日：1992-10-29
申请号：PCT/JP1992000468
申请日：1992-04-14
申请人： SEMICONDUCTOR PROCESS LABORATORY CO., LTD. , CANON SALES CO., INC. , ALCAN-TECH CO., INC. , MAEDA, Kazuo , TOKUMASU, Noboru , NISHIMOTO, Yuhko
发明人： SEMICONDUCTOR PROCESS LABORATORY CO., LTD. , CANON SALES CO., INC. , ALCAN-TECH CO., INC.
IPC分类号： H01L21/68
CPC分类号： H01L21/67167 , C23C16/481 , C23C16/54 , C23C16/56 , H01L21/02129 , H01L21/02271 , H01L21/02304 , H01L21/02337 , H01L21/02345 , H01L21/02348 , H01L21/3105 , H01L21/31625 , H01L21/324 , H01L21/67017 , H01L21/67103 , H01L21/67207 , H01L21/76819 , Y10S414/135 , Y10S414/141 , Y10T29/41
摘要： An apparatus and method for manufacturing semiconductor devices, by which single-layer films and multilayer films of improved qualities can be formed by performing in succession different kinds of processings without exposing wafers to the air. By reducing the changes in the temperature of the wafers between respective processings, the generation of thermal strains is prevented, and the changes and deteriorations of the film qualities are prevented. The apparatus is provided with a film forming part (11) having gas diffusing means (22) for feeding reaction gases, a processing part (12) having processing means (28) for processing the formed film, and a wafer holding means (15). The wafer holding means (15) holds a wafer (29) on a wafer mounting face (13), opposing the wafer to the gas diffusing means (22) or the processing means (28), and can move, keeping this state, between the film forming part (11) and the processing part (12). Further, the wafer holding means (15) has a heating means (14) which can heat the wafer (29) held on the wafer mounting face (13), even while the wafer (29) is moving. The apparatus and method are useful as the ones for manufacturing semiconductor devices, such as so-called multistep process apparatuses, which perform in succession the processings for forming different kinds of films without exposing wafers to the air.

7. 发明申请

WO2018035993A1 阵列基板及液晶显示面板审中-公开
公开(公告)号：WO2018035993A1
公开(公告)日：2018-03-01
申请号：PCT/CN2016/106033
申请日：2016-11-16
申请人：武汉华星光电技术有限公司
发明人：谢应涛
IPC分类号： H01L27/12 , H01L29/786 , H01L21/324
CPC分类号： G02F1/1368 , G02F1/133345 , G02F1/136227 , G02F2202/10 , H01L21/02164 , H01L21/02274 , H01L21/02337 , H01L21/02345 , H01L21/02565 , H01L21/02592 , H01L21/02631 , H01L21/0274 , H01L21/441 , H01L21/47635 , H01L27/1225 , H01L27/1248 , H01L27/1262 , H01L29/42356 , H01L29/45 , H01L29/66969 , H01L29/78693
摘要：一种阵列基板及液晶显示面板，该阵列基板包括：在氧化物半导体材料层（14,23,24,25）形成后，在射频照射下、并在压缩空气中进行退火形成钝化层（17）或栅极绝缘层（13,26）。通过上述方式，能够调节多个氧化物薄膜晶体管的阈值电压之间的差异，并进而为减少氧化物半导体TFT阈值电压的漂移，实现均匀的显示效果提供技术基础。

8. 发明申请

WO2017185921A1 形成过孔的方法、阵列基板及其形成方法、显示装置审中-公开
公开(公告)号：WO2017185921A1
公开(公告)日：2017-11-02
申请号：PCT/CN2017/077646
申请日：2017-03-22
申请人：京东方科技集团股份有限公司 , 合肥鑫晟光电科技有限公司
发明人：袁志东
IPC分类号： H01L21/77 , H01L21/768
CPC分类号： H01L21/486 , G09G3/20 , H01L21/02345 , H01L21/47 , H01L21/475 , H01L21/47573 , H01L21/768 , H01L21/76816 , H01L21/77 , H01L27/1225 , H01L27/124 , H01L27/1259 , H01L29/41733
摘要：一种形成过孔的方法、阵列基板及其制作方法、显示装置，该形成过孔的方法包括：采用第一掩膜版通过第一构图工艺在衬底基板（1）上同时形成第一过孔（A）的图形和第二过孔的上部刻蚀结构（B 1 ）的图形；采用第二掩膜版通过第二构图工艺在形成的第二过孔的上部刻蚀结构图形对应的区域形成第二过孔（B）的图形。

9. 发明申请

WO2016007733A1 GAS PHASE OXIDE REMOVAL AND PASSIVATION OF GERMAINIUM-CONTAINING SEMICONDUCTORS AND COMPOUND SEMICONDUCTORS 审中-公开
标题翻译：气相氧化物去除和钝化含镓的半导体和化合物半导体
公开(公告)号：WO2016007733A1
公开(公告)日：2016-01-14
申请号：PCT/US2015/039726
申请日：2015-07-09
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON U.S. HOLDINGS, INC.
发明人： GAYLORD, Richard H. , BARNETT, Joel
IPC分类号： H01L21/302
CPC分类号： H01L21/02112 , H01L21/02046 , H01L21/0234 , H01L21/02345 , H01L21/306 , H01L21/31116 , H01L21/324
摘要： A method for gas phase oxide removal and passivation of germanium-containing semiconductors and compound semiconductors are disclosed in various embodiments. According to one embodiment of the invention, a method is provided for processing a semiconductor substrate. The method includes providing a substrate containing a germanium-containing semiconductor or a compound semiconductor, and exposing the substrate to a process gas containing a sulfur-containing gas and a nitrogen-containing gas that passivates a surface of the germanium-containing semiconductor or the compound semiconductor with sulfur. According to another embodiment, the germanium-containing semiconductor or the compound semiconductor has an oxidized layer thereon and the exposing to the process gas removes the oxidized layer from the substrate. According to another embodiment, the substrate may be treated with hydrogen fluoride (HF) gas and ammonia (NH 3 ) gas to remove the oxidized layer from the substrate before passivating the germanium-containing semiconductor or compound semiconductor with sulfur.
摘要翻译：在各种实施方案中公开了含锗半导体和化合物半导体的气相氧化物去除和钝化的方法。根据本发明的一个实施例，提供了一种用于处理半导体衬底的方法。该方法包括提供包含含锗半导体或化合物半导体的衬底，并将衬底暴露于含有含锗气体和含氮气体的工艺气体中，所述含氮气体和含氮气体钝化含锗半导体或化合物的表面半导体与硫磺。根据另一实施例，含锗半导体或化合物半导体在其上具有氧化层，并且暴露于工艺气体将氧化层从衬底去除。根据另一个实施方案，可以用氟化氢（HF）气体和氨（NH 3）气体处理衬底，以在用硫钝化含锗半导体或化合物半导体之前从衬底去除氧化层。

10. 发明申请

WO2015163998A1 MILLISECOND ANNEALING IN AMMONIA AMBIENT FOR PRECISE PLACEMENT OF NITROGEN IN THIN FILM STACKS 审中-公开
标题翻译：用于精细放置薄膜堆叠中氨氮的氨基甲酸酯缩氨酸
公开(公告)号：WO2015163998A1
公开(公告)日：2015-10-29
申请号：PCT/US2015/021242
申请日：2015-03-18
申请人： APPLIED MATERIALS, INC.
发明人： SHARMA, Shashank , CHEN, Jau-Jiun , ADERHOLD, Wolfgang R. , NG, Kai , GRAOUI, Houda , MUTHUKRISHNAN, Shankar , MAYUR, Abhilash J. , PHAM, Gia
IPC分类号： H01L21/324 , H01L21/02
CPC分类号： H01L21/02337 , H01L21/02332 , H01L21/02345 , H01L21/02351 , H01L21/02354 , H01L21/268 , H01L21/28202
摘要： Embodiments of the present disclosure relate to methods for processing a substrate. In one embodiment, the method includes forming a dielectric layer over a substrate, wherein the dielectric layer has a dielectric value of about 3.9 or greater, heating the substrate to a first temperature of about 600 degrees Celsius or less by a lamp or a heater of a substrate support disposed within a process chamber, and incorporating nitrogen into the dielectric layer in the process chamber by annealing the dielectric layer at a second temperature between about 600 and about 1400 degrees Celsius in an ambient nitrogen environment, wherein the annealing is performed on the order of millisecond scale.
摘要翻译：本公开的实施例涉及用于处理衬底的方法。在一个实施例中，该方法包括在衬底上形成电介质层，其中电介质层的电介质值约为3.9或更大，通过灯或加热器将衬底加热至约600摄氏度或更低的第一温度衬底支撑件，其设置在处理室内，并且在环境氮环境中通过在约600至约1400摄氏度的第二温度下退火所述介电层而将氮气并入所述处理室中的介电层，其中所述退火在毫秒级的顺序。

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