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1. 发明申请

WO1992019011A1 APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：装置和制造半导体器件的方法
公开(公告)号：WO1992019011A1
公开(公告)日：1992-10-29
申请号：PCT/JP1992000468
申请日：1992-04-14
申请人： SEMICONDUCTOR PROCESS LABORATORY CO., LTD. , CANON SALES CO., INC. , ALCAN-TECH CO., INC. , MAEDA, Kazuo , TOKUMASU, Noboru , NISHIMOTO, Yuhko
发明人： SEMICONDUCTOR PROCESS LABORATORY CO., LTD. , CANON SALES CO., INC. , ALCAN-TECH CO., INC.
IPC分类号： H01L21/68
CPC分类号： H01L21/67167 , C23C16/481 , C23C16/54 , C23C16/56 , H01L21/02129 , H01L21/02271 , H01L21/02304 , H01L21/02337 , H01L21/02345 , H01L21/02348 , H01L21/3105 , H01L21/31625 , H01L21/324 , H01L21/67017 , H01L21/67103 , H01L21/67207 , H01L21/76819 , Y10S414/135 , Y10S414/141 , Y10T29/41
摘要： An apparatus and method for manufacturing semiconductor devices, by which single-layer films and multilayer films of improved qualities can be formed by performing in succession different kinds of processings without exposing wafers to the air. By reducing the changes in the temperature of the wafers between respective processings, the generation of thermal strains is prevented, and the changes and deteriorations of the film qualities are prevented. The apparatus is provided with a film forming part (11) having gas diffusing means (22) for feeding reaction gases, a processing part (12) having processing means (28) for processing the formed film, and a wafer holding means (15). The wafer holding means (15) holds a wafer (29) on a wafer mounting face (13), opposing the wafer to the gas diffusing means (22) or the processing means (28), and can move, keeping this state, between the film forming part (11) and the processing part (12). Further, the wafer holding means (15) has a heating means (14) which can heat the wafer (29) held on the wafer mounting face (13), even while the wafer (29) is moving. The apparatus and method are useful as the ones for manufacturing semiconductor devices, such as so-called multistep process apparatuses, which perform in succession the processings for forming different kinds of films without exposing wafers to the air.

2. 发明申请

WO1992015116A1 SEMICONDUCTOR MANUFACTURING EQUIPMENT 审中-公开
标题翻译：半导体制造设备
公开(公告)号：WO1992015116A1
公开(公告)日：1992-09-03
申请号：PCT/JP1992000137
申请日：1992-02-12
申请人： SEMICONDUCTOR PROCESS LABORATORY CO., LTD. , CANON SALES CO., INC. , ALCAN-TECH CO., INC. , MAEDA, Kazuo , OHIRA, Kouichi , HIROSE, Mitsuo
发明人： SEMICONDUCTOR PROCESS LABORATORY CO., LTD. , CANON SALES CO., INC. , ALCAN-TECH CO., INC.
IPC分类号： H01L21/31
CPC分类号： H01L21/6719 , C23C16/44 , H01L21/67017 , H01L21/67196 , H01L21/67207
摘要： Semiconductor manufacturing equipment having a plurality of treatment sections, simultaneously or continuously performing film forming and etching, and making it possible to feed treatment gas for film forming and etching to each treatment section from one gas feed source and perform uniform wafer treatment by each treatment section; which includes a treatment gas feed source (9) for feeding treatment gas, a plurality of branch pipes (19a to 19e) branched from a sending pipe (18) connected with the treatment gas feed source (9), a plurality of intake pipes (20a to 20e) connected between the branch pipes (19a to 19e) and the treatment sections (27a to 27e) through first flow regulating means (25a to 25e), a plurality of exhaust pipes (21a to 21e) connected to the branch pipes (19a to 19e), selecting means (24a to 24e) for selectively flowing treatment gas through the intake pipes (20a to 20e) or the exhaust pipes (21a to 21e), and second flow regulating means (26a to 26e) formed on the exhaust pipes (21a to 21e). This equipment is useful as a CVD system or etching system having a plurality of treatment sections such as a multichamber.
摘要翻译：半导体制造设备技术领域本发明涉及一种半导体制造设备，其包括多个处理部分，同时或连续地执行成膜和蚀刻操作以及用于为训练操作提供处理气体。并且从气体供应源蚀刻到每个处理部分，以及通过每个处理部分均匀处理切片。这种设备包括用于引入处理气体的处理气体供应源（9），从分配管道（18）形成分支的若干分支管道（19a至19e）连接至处理气体供给源（9），连接在旁路管道（19a至19e）和处理部分（27a至27e）之间的多个入口管道（20a至20e）第一组流量控制构件（25a至25e），连接至旁路管道（19a至19e）的多个排放管道（21a至21e），用于提供流量的选择器构件（24a至24e）（20a〜20e）或排气管道（21a〜21e）内的处理气体，以及安装在该排气管道内的第二组流量控制部件（26a〜26e）传输线（21a至21e）。这样的装置作为化学气相沉积系统或包括多个例如由多个多室构成的处理部分的攻击系统是有用的。

3. 发明申请

WO1992015114A1 SEMICONDUCTOR MANUFACTURING EQUIPMENT 审中-公开
标题翻译：半导体制造设备
公开(公告)号：WO1992015114A1
公开(公告)日：1992-09-03
申请号：PCT/JP1992000135
申请日：1992-02-12
申请人： SEMICONDUCTOR PROCESS LABORATORY CO., LTD. , CANON SALES CO., INC. , ALCAN-TECH CO., INC. , MAEDA, Kazuo , OHIRA, Kouichi , HIROSE, Mitsuo
发明人： SEMICONDUCTOR PROCESS LABORATORY CO., LTD. , CANON SALES CO., INC. , ALCAN-TECH CO., INC.
IPC分类号： H01L21/31
CPC分类号： H01L21/68764 , C23C16/4584 , C23C16/54 , H01L21/67167 , H01L21/67778 , H01L21/68771
摘要： Continuous automated semiconductor manufacturing equipment for forming a film on a wafer through the CVD method, which makes it possible to move wafers with their temperature kept at a predetermined value, perform the manufacturing control of individual wafer, and form different types of multilayer films. The equipment has a wafer holder (13), a rotary shaft (21) for holding the wafer holder (13) so that the wafer mounting surface of the wafer holder (13) rotates in the circumferential direction on one plane, and a gas disperser (12) installed so that it faces the wafer mounting surface of the wafer holding (13) and separates from the wafer holder (13); wherein a first pair of electrodes (34) electrically connected with a heater set on the wafer holder (13) are installed on the rotary shaft (21) and a second pair of electrodes (35) connected with a power supply contact the corresponding first pair of electrodes (34) so that the rotary shaft (21) is not prevented from rotating. This equipment is useful as a continuous-type automated CVD system.
摘要翻译：本发明涉及一种用于自动化连续半导体制造的设备，该设备包括通过化学气相沉积在晶片上形成膜，其使晶片能够在保持其温度值的同时移动预先确定，以分别控制每个切片的制造并获得不同类型的多层膜。该设备包括片状载体（13），支撑片状载体（13）的旋转轴（21），以便片状夹具安装表面（13）可以进行旋转运动。（13）的安装表面上并且远离所述支撑件（13）安装的气体扩散器（12）。在这样的安装中，第一对电极（34）电连接至所述晶片载体支撑的加热器单元（13）被安装在旋转轴（21）和第二对电极（35 ）与第一对相应的电极（34）接触，从而旋转轴（21）的旋转运动不受阻碍。这种装置作为连续式自动化学气相沉积系统是有用的。

4. 发明申请

WO1992018430A1 METHOD FOR FORMING VAPOR PHASE GROWN FILM AND APPARATUS FOR PRODUCING SEMICONDUCTOR DEVICES 审中-公开
标题翻译：形成蒸气相膜的方法和用于生产半导体器件的装置
公开(公告)号：WO1992018430A1
公开(公告)日：1992-10-29
申请号：PCT/JP1992000467
申请日：1992-04-14
申请人： SEMICONDUCTOR PROCESS LABORATORY CO., LTD. , CANON SALES CO., INC. , ALCAN-TECH CO., INC. , MAEDA, Kazuo , TOKUMASU, Noboru , NISHIMOTO, Yuhko
发明人： SEMICONDUCTOR PROCESS LABORATORY CO., LTD. , CANON SALES CO., INC. , ALCAN-TECH CO., INC.
IPC分类号： C03B08/04
CPC分类号： H01L21/76801 , C03C17/02 , C23C16/401 , H01L21/3105 , H01L21/31604
摘要： A method for forming a vapor phase grown film to be used when an inter-level insulating film of a semiconductor device is formed, which is suitable for both the formation of an inter-level insulating film between Al and Al and the formation of an inter-level insulating film between Al and a gate, is suitable for mass production and can form an improved vapor phase grown film. An organic silane compound containing siloxane or alkoxysilane and an alkoxy compound of germanium are mixed in a vapor phase, and are reacted with ozone at a normal pressure to form a thin glass film consisting of a binary system composed of silicon dioxide and germanium oxide on a substrate. The present invention is useful as the vapor phase grown film for forming the inter-level insulating film between Al and Al and the inter-level insulating film between Al and the gate.

5. 发明申请

WO1992015115A1 SEMICONDUCTOR MANUFACTURING EQUIPMENT 审中-公开
标题翻译：半导体制造设备
公开(公告)号：WO1992015115A1
公开(公告)日：1992-09-03
申请号：PCT/JP1992000136
申请日：1992-02-12
申请人： SEMICONDUCTOR PROCESS LABORATORY CO., LTD. , CANON SALES CO., INC. , ALCAN-TECH CO., INC. , MAEDA, Kazuo , OHIRA, Kouichi , HIROSE, Mitsuo
发明人： SEMICONDUCTOR PROCESS LABORATORY CO., LTD. , CANON SALES CO., INC. , ALCAN-TECH CO., INC.
IPC分类号： H01L21/31
CPC分类号： H01L21/67017 , C23C16/4407 , Y10S148/017
摘要： Semiconductor manufacturing equipment for forming a film on a wafer through the CVD method, which makes it possible to easily remove dusts produced in a chamber without decreasing the serviceability ratio of the equipment and has at least one gas disperser (1) to discharge reactive gas for forming a film on a wafer from a gas discharging surface (2) and at least one wafer holder (3) having a wafer mounting surface (4) facing a plane including the gas discharging surface (2); wherein at least one cleaner (7) having a suction port (5) and a brush (6) connected with the suction port (5) is installed so that it faces the plane including the gas discharging surface (2), either cleaner (7) or gas disperser (1) moves while the cleaner (7) faces the plane including the gas discharging surface (2), and the brush (6) contacts the gas discharging surface (2). This equipment is useful as a continuous-type automated CVD system.

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