发明申请
WO2014139795A1 METHODS FOR PROVIDING SPACED LITHOGRAPHY FEATURES ON A SUBSTRATE BY SELF-ASSEMBLY OF BLOCK COPOLYMERS
审中-公开
基本信息:
- 专利标题： METHODS FOR PROVIDING SPACED LITHOGRAPHY FEATURES ON A SUBSTRATE BY SELF-ASSEMBLY OF BLOCK COPOLYMERS
- 专利标题（中）：通过块状共聚物自组装提供基板上的间距平面特征的方法
- 申请号：PCT/EP2014/053694 申请日：2014-02-26
- 公开(公告)号：WO2014139795A1 公开(公告)日：2014-09-18
- 发明人： FINDERS, Jozef , WUISTER, Sander , VAN DER HEIJDEN, Eddy , BOOTS, Henri
- 申请人： ASML NETHERLANDS B.V.
- 申请人地址： P.O. Box 324 NL-5500 AH Veldhoven NL
- 专利权人： ASML NETHERLANDS B.V.
- 当前专利权人： ASML NETHERLANDS B.V.
- 当前专利权人地址： P.O. Box 324 NL-5500 AH Veldhoven NL
- 代理机构： WEENINK, Willem
- 优先权： US61/792,117 20130315
- 主分类号： B81C1/00
- IPC分类号： B81C1/00 ; G03F7/20
摘要：
A method of forming a plurality of regularly spaced lithography features, e.g. contact holes, including: providing a trench on a substrate, the trench having opposing side-walls and a base, with the side-walls having a width therebetween, wherein the trench is formed by photolithography including exposing the substrate using off-axis illumination whereby a modulation is provided to the side-walls of the trench; providing a self-assemblable block copolymer having first and second blocks in the trench; causing the self-assemblable block copolymer to self-assemble into an ordered layer in the trench, the layer having first domains of the first block and second domains of the second block; and selectively removing the first domain to form at least one regularly spaced row of lithography features having the second domain along the trench.
摘要（中）：
一种形成多个规则间隔的光刻特征的方法，例如。 接触孔，包括：在衬底上提供沟槽，所述沟槽具有相对的侧壁和底座，其中所述侧壁之间具有宽度，其中所述沟槽通过光刻形成，包括使用离轴照明曝光所述衬底，由此 向沟槽的侧壁提供调制; 提供在沟槽中具有第一和第二嵌段的自组装嵌段共聚物; 使自组装嵌段共聚物自组装成沟槽中的有序层，该层具有第一嵌段的第一区域和第二嵌段的第二区域; 以及选择性地移除所述第一区域以形成沿着所述沟槽具有所述第二结构域的至少一个规则间隔的光刻特征行。
IPC结构图谱:
| B | 作业；运输 |
| --B81 | 微观结构技术 |
| ----B81C | 专门适用于制造或处理微观结构的装置或系统的方法或设备 |
| ------B81C1/00 | 在基片内或其上制造或处理的装置或系统 |