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1. 发明申请

WO2013153749A1 アパタイト結晶审中-公开
标题翻译： APATITE水晶
公开(公告)号：WO2013153749A1
公开(公告)日：2013-10-17
申请号：PCT/JP2013/001928
申请日：2013-03-21
申请人：株式会社小糸製作所
发明人：榎本　公典 , 大長　久芳 , 四ノ宮　裕
IPC分类号： C30B29/14 , C01B25/32 , C01B25/455 , C30B29/66
CPC分类号： C01B25/455 , C01B25/32 , C01B25/321 , C30B7/10 , C30B9/12 , C30B15/00 , C30B29/14 , C30B29/607 , Y10T428/2975
摘要：　アパタイト結晶は、一般式がＭ２５（ＰＯ４）３Ｘ（Ｍ２は２価のアルカリ土類金属及びＥｕからなる群より選ばれる少なくとも１種の元素、Ｘはハロゲン元素及びＯＨからなる群より選ばれる少なくとも一種の元素または分子を示す。）で表される単結晶であって、単結晶がチューブ状である。また、この結晶は、外形が六角柱であってもよい。また、六角柱の上面または下面に形成されている穴の開口部の形状が六角形であってもよい。
摘要翻译：由通式M2 5（PO 4）3 X表示的单晶的磷灰石晶体[其中，M2表示选自二价碱土金属和Eu中的至少一种元素; X表示选自卤素原子和OH的至少一种元素或分子，所述单晶为管状。晶体的外部形式可以是六边形棱镜。形成在六边形棱镜的顶面或底面上的孔的开口可以是六边形。

2. 发明申请

WO00003056A1 SYSTEM AND METHOD FOR REDUCING PARTICLES IN EPITAXIAL REACTORS 审中-公开
标题翻译：用于减少外源反应器中的颗粒的系统和方法
公开(公告)号：WO00003056A1
公开(公告)日：2000-01-20
申请号：PCT/US1999/015070
申请日：1999-06-30
IPC分类号： C23C16/44 , C30B25/08 , C30B29/14 , H01L21/205 , H01L21/677 , C23C16/00 , C30B23/06
CPC分类号： C30B29/14 , C23C16/4401 , C23C16/4408 , C30B25/08 , Y10S414/139
摘要： An apparatus and method for reducing particles in reactors. The apparatus (10) includes an enclosure for processing the semiconductor wafers. The enclosure has a wafer handling chamber (16) connected by an isolation gate valve (18) to a processing chamber (20). Additionally, the apparatus includes: pipes (24, 26) for delivering a purge gas into the wafer handling chamber (16); a pilot operated back pressure regulator (40) for regulating the delivery and removal of the purge gas from the enclosure for reducing disturbances from the purge gas entering into the enclosure; a flow regulated Bernoulli wand (36) for lifting and holding a single wafer; ionizers (21a-21d) in the purge gas lines entering the wafer handling chamber and load locks for ionizing the purged gas molecules, the ionized gas discharges all the static inside the semiconductor equipment and prevents the wafer from attracting charged particles; and means for reducing gas flow turbulence when switching valves within the reactor.
摘要翻译：用于还原反应器中的颗粒的装置和方法。装置（10）包括用于处理半导体晶片的外壳。外壳具有通过隔离闸阀（18）连接到处理室（20）的晶片处理室（16）。另外，该装置包括：用于将净化气体输送到晶片处理室（16）中的管道（24,26）。一个先导操作的背压调节器（40），用于调节来自外壳的吹扫气体的传送和移除，以减少进入外壳的吹扫气体的干扰; 用于提升和保持单个晶片的流动调节伯努利棒（36）进入晶片处理室的净化气体管线中的电离器（21a-21d）和用于电离被清除气体分子的负载锁定器，离子化气体将半导体设备内的所有静电放出，并防止晶片吸引带电粒子; 以及当在反应器内切换阀时减少气流湍流的装置。

3. 发明申请

WO98036109A1 FABRICATION OF AN INVERTEDLY POLED DOMAIN STRUCTURE FROM A FERROELECTRIC CRYSTAL 审中-公开
标题翻译：来自电磁晶体的反相结构域结构的制造
公开(公告)号：WO98036109A1
公开(公告)日：1998-08-20
申请号：PCT/IL1998/000054
申请日：1998-02-04
IPC分类号： C30B30/00 , C30B30/02 , G02F1/355 , C30B29/24 , C30B29/30
CPC分类号： G02F1/3558 , C30B29/14 , C30B29/30 , C30B30/00 , C30B30/02
摘要： A method of fabricating an invertedly poled domain structure having alternating sections of opposited electric polarities, from a ferroelectric crystal wafer (1) having two opposite polar surfaces, comprises patterning at least one of the two polar surfaces of the wafer to comprise a plurality of alternating discrete regions, of which first regions are adapted for and second regions are protected from the direct application thereto of an electric contact; applying to both polar surfaces of the wafer electrically conducting electrodes (10 and 11) so that the first regions are in direct contact with the electrodes and the second regions are protected from such a contact; and applying to the electrodes an electrical field (20) of the intensity E. The electrical field is applied to the wafer at a working temperature by heater/cooler (15).
摘要翻译：从具有两个相反极性表面的铁电晶体晶片（1）制造具有相对电极性交替部分的反极化畴结构的方法包括使晶片的两个极性表面中的至少一个构图包括多个交替离开区域，其第一区域适于和第二区域被保护免受电接触的直接应用; 施加到晶片导电电极（10和11）的两个极性表面，使得第一区域与电极直接接触，并且第二区域被保护免受这种接触; 并向电极施加强度为E的电场（20）。电场通过加热器/冷却器（15）在工作温度下施加到晶片。

4. 发明申请

WO1993015242A1 METHOD FOR GROWING MONOCRYSTALS OF KTiOPO4 审中-公开
标题翻译：用于生长KTiOPO4单晶的方法
公开(公告)号：WO1993015242A1
公开(公告)日：1993-08-05
申请号：PCT/RU1992000012
申请日：1992-01-23
申请人： MOSKOVSKOE GOSUDARSTVENNO-KOOPERATIVNOE ... , TSYGANKOV, Sergei Viktorovich
发明人： MOSKOVSKOE GOSUDARSTVENNO-KOOPERATIVNOE ...
IPC分类号： C30B09/06
CPC分类号： C30B15/00 , C30B29/14
摘要： A method for growing a monocrystal of KTiOPO4 from a melt solution consists in heating the system K2O-TiO2-P2O5 up to a temperature of 900 - 1100 DEG C. The ratio of said components in mole per cent is the following: 40 - 50 : 19 - 33.5 : 26.5 - 33.5, respectively. The temperature on the surface of this solution is maintained 5-8 DEG lower than that at the depth of 2-2.5 cm and the solution is cooled down to saturation on the surface. Then at the depth of 1 mm of the solution a seed crystal is introduced, oriented by one of its axes at right angles to the surface of the solution. After that the solution is further cooled down by 10 - 30 DEG C at the rate of 5 DEG C per hour with subsequent raising of the crystal from the solution at the speed of 1-5 mm every 24 hours while maintaining the said rate of cooling of the solution.
摘要翻译：从熔体溶液中生长KTiOPO4的单晶的方法包括将系统K 2 O-TiO 2 -P 2 O 5加热至900-111℃的温度。所述组分的摩尔百分比如下：40-50：分别为19 - 33.5：26.5 - 33.5。该溶液表面的温度比深度为2-2.5cm的温度低5-8℃，溶液冷却至表面饱和。然后在溶液的1mm的深度处引入晶种，其一个轴线与溶液表面成直角定向。之后，溶液以5℃/小时的速度进一步冷却10-30℃，随后每24小时以1-5mm的速度从溶液中升高晶体，同时保持所述冷却速率的解决方案。

5. 发明申请

WO2015096095A1 一种三元无机化合物晶体及其制备方法和应用审中-公开
公开(公告)号：WO2015096095A1
公开(公告)日：2015-07-02
申请号：PCT/CN2013/090570
申请日：2013-12-26
申请人：深圳大学
发明人：邢锋 , 张宁 , 丁铸 , 刘飚 , 韩宁旭 , 王卫仑 , 李大望 , 龙武剑 , 董必钦 , 王晓东
IPC分类号： C30B29/10 , C04B7/32
CPC分类号： C01B25/45 , C01B25/32 , C01B25/34 , C01B37/065 , C04B12/02 , C04B28/02 , C04B35/447 , C04B35/624 , C04B35/6455 , C04B2103/445 , C04B2235/3208 , C04B2235/3217 , C04B2235/447 , C04B2235/6567 , C04B2235/661 , C30B1/02 , C30B1/04 , C30B1/10 , C30B29/14 , C30B29/22 , C04B22/16 , C04B18/023
摘要：本发明提供一种三元无机化合物晶体，其分子式为Ca 8 Al 12 P 2 O 31 ，以及其制备方法，包括如下步骤：按照分子式为Ca 8 Al 12 P 2 O 31 中钙、铝和磷的摩尔比例分别称取钙盐、铝盐和磷酸盐，于1550～1570℃下煅烧处理，冷却，研磨得所述三元无机化合物晶体。本发明还提供上述三元无机化合物在胶凝材料及分子筛、非线性光学晶体、光致变色材料中的应用。

6. 发明申请

WO99009236A1 DEVICE FOR ISOLATION OF SEED CRYSTALS DURING PROCESSING OF SOLUTION 审中-公开
标题翻译：在溶液加工过程中分离种子晶体的装置
公开(公告)号：WO99009236A1
公开(公告)日：1999-02-25
申请号：PCT/US1998/017005
申请日：1998-08-18
IPC分类号： C30B7/00 , C30B9/00 , C30B29/14
CPC分类号： C30B29/14 , C30B7/08 , Y10T117/1024
摘要： A device for isolation of seed crystals during processing of solutions. The device enables a seed crystal to be introduced into the solution without exposing the solution to contaminants or to sources of drying and cooling. The device constitutes a seed protector which allows the seed to be present in the growth solution during filtration and overheating operations while at the same time preventing the seed from being dissolved by the under saturated solution. When the solution processing has been completed and the solution cooled to near the saturation point, the seed protector is opened, exposing the seed to the solution and allowing growth to begin.
摘要翻译：用于在处理溶液期间分离晶种的装置。该装置能够将晶种引入溶液中而不将溶液暴露于污染物或干燥和冷却来源。该装置构成种子保护器，其允许种子在过滤和过热操作期间存在于生长溶液中，同时防止种子被饱和溶液溶解。当溶液处理完成并且溶液冷却到接近饱和点时，种子保护剂打开，将种子暴露于溶液中并允许生长开始。

7. 发明申请

WO1993016956A1 OPTICALLY USEFUL COMPOSITIONS AND A SOL-GEL PROCESS FOR THEIR PRODUCTION 审中-公开
标题翻译：光学有用的组合物及其生产的溶胶凝胶工艺
公开(公告)号：WO1993016956A1
公开(公告)日：1993-09-02
申请号：PCT/US1993001380
申请日：1993-02-16
申请人： E.I. DU PONT DE NEMOURS AND COMPANY
发明人： E.I. DU PONT DE NEMOURS AND COMPANY , HARMER, Mark, A.
IPC分类号： C01B25/45
CPC分类号： G02B6/13 , C01B25/45 , C01B25/451 , C30B5/00 , C30B29/10 , C30B29/14 , G02F1/3553
摘要： A sol-gel process is disclosed for preparing MTiOXO4 when M is K, Rb, Tl and/or NH4 and X is P and/or As which involves dissolving suitable compounds of M, Ti and X in stoichiometic amounts in a suitable organic liquid, and then producing crystalline MTiOXO4 using procedures including hydrolysis, condensation, solidification and pyrolysis. Bulk material and films (e.g., films of KTP on a single crystal silicon substrate) may be produced. Compositions comprising films of said MTiOXO4 produced by this process are disclosed.

8. 发明申请

WO1991009993A1 HYDROTHERMAL PROCESS FOR GROWING OPTICAL-QUALITY SINGLE CRYSTALS 审中-公开
标题翻译：用于生产光学质量单晶的水热法
公开(公告)号：WO1991009993A1
公开(公告)日：1991-07-11
申请号：PCT/US1990007357
申请日：1990-12-20
申请人： E.I. DU PONT DE NEMOURS AND COMPANY
发明人： E.I. DU PONT DE NEMOURS AND COMPANY , FERRETTI, August , GIER, Thurman, Eugene
IPC分类号： C30B07/00
CPC分类号： C30B29/22 , C30B7/00 , C30B29/14 , Y10S117/918
摘要： A hydrothermal process for growing a crystal of MTiOXO4 at an elevated temperature is disclosed which employs a growth medium comprising a mineralizer solution, and is characterized as employing aqeuous mineralizer solution in which the concentration of M is at least about 8 molar, and as employing a growth region temperature of less than about 500 DEG C. and/or a pressure of less than 14,000 psi during crystallization. M is selected from the group consisting of K, Rb, Tl and NH4 and mixtures thereof, and X is selected from the group consisting of P and As and mixtures thereof.

9. 发明申请

WO2015185781A1 SÍNTESIS DE SAPO-18 Y SUS APLICACIONES CATALÍTICAS 审中-公开
标题翻译： SAPO-18的合成及其催化应用
公开(公告)号：WO2015185781A1
公开(公告)日：2015-12-10
申请号：PCT/ES2015/070438
申请日：2015-06-03
申请人： CONSEJO SUPERIOR DE INVESTIGACIONES CIENTÍFICAS (CSIC) , UNIVERSITAT POLITÈCNICA DE VALÈNCIA
发明人： CORMA CANÓS, Avelino , MOLINER MARÍN, Manuel , MARTÍNEZ FRANCO, Raquel
IPC分类号： C01B39/54 , B01J29/85
CPC分类号： B01J29/85 , B01J29/7015 , B01J29/723 , B01J29/743 , B01J29/763 , B01J37/0018 , B01J37/009 , B01J37/04 , B01J37/10 , C01B39/54 , C07D211/14 , C30B7/10 , C30B29/14
摘要： Síntesis de los polimorfos silicoaluminofosfato y metalosilicoaluminofosfato del tamiz molecular SAPO-18 utilizando amonios cuaternarios cíclicos como agentes directores de estructura orgánicos (ADEO), y su uso como catalizador.
摘要翻译：本发明涉及使用环状季铵作为有机结构导向剂（OSDA）的分子筛SAPO-18的硅铝磷酸盐和金属硅铝磷酸盐多晶型物的合成及其作为催化剂的用途。

10. 发明申请

WO2011092599A1 DEVICE FOR CRYSTAL GROWTH AT INTERMEDIATE TEMPERATURES USING CONTROLLED SEMI-ACTIVE COOLING 审中-公开
标题翻译：使用受控半主动冷却的中间温度下晶体生长的装置
公开(公告)号：WO2011092599A1
公开(公告)日：2011-08-04
申请号：PCT/IB2011/000385
申请日：2011-01-29
申请人： KRAUTTER, Michael
发明人： KRAUTTER, Michael
IPC分类号： C30B7/08 , B01F7/00 , C30B35/00
CPC分类号： C30B7/08 , B01F13/0827 , B01F13/0872 , C30B29/14 , C30B35/00 , Y10T117/1008
摘要： A crystal growing cell which has computerized temperature control and agitation means to inhibit crystal nucleation. The temperature is controlled semi-actively, i.e., by monitoring the temperature with a thermistor and balancing ambient heat loss with heat added to the system by heating resistors or heating elements. When the chemical is completely dissolved by heating the mixture to a temperature above the saturation temperature, the temperature is lowered. At the saturation temperature the temperature is initially reduced slowly to avoid crystal nucleation. The saturation temperature of the initial solution is selected to be at an intermediate temperature which is high enough that the amount of dissolved material is large enough to produce a large crystal or large crystal clusters, yet not so high that the solubility curve has a large slope and therefore requires a high degree of temperature control to avoid crystal nucleation in the solution. Use of the cell with a variety of chemical solutions, each having the same saturation temperature, facilitates optimization while maintaining a simple, low cost design.
摘要翻译：具有计算机化的温度控制和搅拌的晶体生长池意味着抑制晶体成核。半主动地控制温度，即通过用热敏电阻监测温度，并通过加热电阻或加热元件平衡环境热损失与加入系统的热量。当化学品通过将混合物加热至高于饱和温度的温度完全溶解时，温度降低。在饱和温度下，温度最初缓慢降低以避免晶体成核。初始溶液的饱和温度选择为足够高的中间温度，使得溶解的材料的量足够大以产生大的晶体或大的晶体簇，但不太高，使得溶解度曲线具有大的斜率因此需要高度的温度控制以避免溶液中的晶体成核。使用具有各种具有相同饱和温度的各种化学溶液的电池便于优化，同时保持简单，低成本的设计。

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