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1. 发明申请

WO1993015242A1 METHOD FOR GROWING MONOCRYSTALS OF KTiOPO4 审中-公开
标题翻译：用于生长KTiOPO4单晶的方法
公开(公告)号：WO1993015242A1
公开(公告)日：1993-08-05
申请号：PCT/RU1992000012
申请日：1992-01-23
申请人： MOSKOVSKOE GOSUDARSTVENNO-KOOPERATIVNOE ... , TSYGANKOV, Sergei Viktorovich
发明人： MOSKOVSKOE GOSUDARSTVENNO-KOOPERATIVNOE ...
IPC分类号： C30B09/06
CPC分类号： C30B15/00 , C30B29/14
摘要： A method for growing a monocrystal of KTiOPO4 from a melt solution consists in heating the system K2O-TiO2-P2O5 up to a temperature of 900 - 1100 DEG C. The ratio of said components in mole per cent is the following: 40 - 50 : 19 - 33.5 : 26.5 - 33.5, respectively. The temperature on the surface of this solution is maintained 5-8 DEG lower than that at the depth of 2-2.5 cm and the solution is cooled down to saturation on the surface. Then at the depth of 1 mm of the solution a seed crystal is introduced, oriented by one of its axes at right angles to the surface of the solution. After that the solution is further cooled down by 10 - 30 DEG C at the rate of 5 DEG C per hour with subsequent raising of the crystal from the solution at the speed of 1-5 mm every 24 hours while maintaining the said rate of cooling of the solution.
摘要翻译：从熔体溶液中生长KTiOPO4的单晶的方法包括将系统K 2 O-TiO 2 -P 2 O 5加热至900-111℃的温度。所述组分的摩尔百分比如下：40-50：分别为19 - 33.5：26.5 - 33.5。该溶液表面的温度比深度为2-2.5cm的温度低5-8℃，溶液冷却至表面饱和。然后在溶液的1mm的深度处引入晶种，其一个轴线与溶液表面成直角定向。之后，溶液以5℃/小时的速度进一步冷却10-30℃，随后每24小时以1-5mm的速度从溶液中升高晶体，同时保持所述冷却速率的解决方案。

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