基本信息:
- 专利标题： HYDROTHERMAL PROCESS FOR GROWING OPTICAL-QUALITY SINGLE CRYSTALS
- 专利标题（中）：用于生产光学质量单晶的水热法
- 申请号：PCT/US1990007357 申请日：1990-12-20
- 公开(公告)号：WO1991009993A1 公开(公告)日：1991-07-11
- 发明人： E.I. DU PONT DE NEMOURS AND COMPANY , FERRETTI, August , GIER, Thurman, Eugene
- 申请人： E.I. DU PONT DE NEMOURS AND COMPANY
- 专利权人： E.I. DU PONT DE NEMOURS AND COMPANY
- 当前专利权人： E.I. DU PONT DE NEMOURS AND COMPANY
- 优先权： US461,562 19900105
- 主分类号： C30B07/00
- IPC分类号： C30B07/00
摘要：
A hydrothermal process for growing a crystal of MTiOXO4 at an elevated temperature is disclosed which employs a growth medium comprising a mineralizer solution, and is characterized as employing aqeuous mineralizer solution in which the concentration of M is at least about 8 molar, and as employing a growth region temperature of less than about 500 DEG C. and/or a pressure of less than 14,000 psi during crystallization. M is selected from the group consisting of K, Rb, Tl and NH4 and mixtures thereof, and X is selected from the group consisting of P and As and mixtures thereof.