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1. 发明申请

WO2009152127A2 TECHNIQUES FOR PROVIDING A MULTIMODE ION SOURCE 审中-公开
标题翻译：提供多个离子源的技术
公开(公告)号：WO2009152127A2
公开(公告)日：2009-12-17
申请号：PCT/US2009/046701
申请日：2009-06-09
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES , KURUNCZI, Peter, E. , DORAI, Rajesh , BILOIU, Costel , PLATOW, Wilhelm, P.
发明人： KURUNCZI, Peter, E. , DORAI, Rajesh , BILOIU, Costel , PLATOW, Wilhelm, P.
IPC分类号： H01L21/265
CPC分类号： H01J37/08 , H01J27/08 , H01J27/16 , H01J37/3171 , H01J2237/061 , H01J2237/0817 , H01J2237/082 , H01J2237/0827 , H01J2237/304
摘要： Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation comprising an ion source that operates in multiple modes such that a first mode is an arc-discharge mode and a second mode is an RF mode.
摘要翻译：公开了提供多模离子源的技术。在一个特定示例性实施例中，可以将技术实现为用于离子注入的装置，其包括以多种模式操作的离子源，使得第一模式是电弧放电模式，而第二模式是RF模式。

2. 发明申请

WO2009155500A2 METHOD AND APPARATUS FOR CONTROLLING BEAM CURRENT UNIFORMITY IN AN ION IMPLANTER 审中-公开
标题翻译：用于控制离子植入物中光束电流均匀性的方法和装置
公开(公告)号：WO2009155500A2
公开(公告)日：2009-12-23
申请号：PCT/US2009/047929
申请日：2009-06-19
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES , DORAI, Rajesh , KURUNCZI, Peter, E. , PEREL, Alexander, S. , PLATOW, Wilhelm, P.
发明人： DORAI, Rajesh , KURUNCZI, Peter, E. , PEREL, Alexander, S. , PLATOW, Wilhelm, P.
IPC分类号： H01L21/265
CPC分类号： H01J37/3171 , H01J37/04 , H01J37/08 , H01J37/09 , H01J2237/024 , H01J2237/0455 , H01J2237/08 , H01J2237/083 , H01J2237/0835 , H01J2237/24542
摘要： An electrode assembly for use with an ion source chamber or as part of an ion implanter processing system to provide a uniform ion beam profile. The electrode assembly includes an electrode having an extraction slot with length L aligned with an aperture of the ion source chamber for extracting an ion beam. The electrode includes a plurality of segments partitioned within the length of the extraction slot where each of the segments is configured to be displaced in at least one direction with respect to the ion beam. A plurality of actuators are connected to the plurality of electrode segments for displacing one or more of the segments. By displacing at least one of the plurality of electrode segments, the current density of a portion of the ion beam corresponding to the position of the segment within the extraction slot is modified to provide a uniform current density beam profile associated with the extracted ion beam.
摘要翻译：一种与离子源室一起使用或作为离子注入机处理系统的一部分以提供均匀离子束分布的电极组件。电极组件包括具有长度为L的提取槽的电极，其与用于提取离子束的离子源室的孔径对准。电极包括在提取槽的长度内分隔的多个段，其中每个段被配置为相对于离子束在至少一个方向上移位。多个致动器连接到多个电极段，用于移动一个或多个段。通过移位多个电极段中的至少一个，修改与提取槽内的段的位置相对应的一部分离子束的电流密度，以提供与提取的离子束相关联的均匀的电流密度波束轮廓。

3. 发明申请

WO2012112991A1 TECHNIQUE FOR LIMITING FAULT CURRENT TRANSMISSION 审中-公开
标题翻译：限制故障电流传输的技术
公开(公告)号：WO2012112991A1
公开(公告)日：2012-08-23
申请号：PCT/US2012/025901
申请日：2012-02-21
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , SINCLAIR, Frank , DORAI, Rajesh
发明人： SINCLAIR, Frank , DORAI, Rajesh
IPC分类号： H02H9/02 , H01F38/02
CPC分类号： H02H9/021 , H01F38/023
摘要： A technique for limiting fault current transmission is disclosed, in one particular exemplary embodiment, the technique may be realized with a fault current limiter comprising a core having at least first easy: axis and a hard axis; and a first coil wound around the core, the first coil configured to carry current, in some embodiment, the easy axis of the core may be aligned with H fields generated by the current transmitted through the first coil.
摘要翻译：在一个特定的示例性实施例中，公开了一种用于限制故障电流传输的技术，该技术可以用包括具有至少第一容易轴和硬轴的磁芯的故障电流限制器来实现; 以及缠绕在芯上的第一线圈，构造成承载电流的第一线圈在一些实施例中可以使芯的容易轴与由通过第一线圈传输的电流产生的H场对准。

4. 发明申请

WO2009064875A1 PARTICLE BEAM ASSISTED MODIFICATION OF THIN FILM MATERIALS 审中-公开
标题翻译：细粒束辅助修饰薄膜材料
公开(公告)号：WO2009064875A1
公开(公告)日：2009-05-22
申请号：PCT/US2008/083391
申请日：2008-11-13
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , ENGLAND, Jonathan, Gerald , DORAI, Rajesh , GODET, Ludovic
发明人： ENGLAND, Jonathan, Gerald , DORAI, Rajesh , GODET, Ludovic
IPC分类号： H01L21/20 , H01L29/786 , H01L31/042
CPC分类号： H01L21/02689 , C30B1/023 , C30B29/06 , H01L21/0237 , H01L21/02422 , H01L21/02532 , H01L21/268 , H01L31/0747 , H01L31/182 , H01L31/202 , Y02E10/546 , Y02P70/521
摘要： Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: disposing a substrate having an upper surface and a lower surface on a platen contained in a chamber; generating a plasma containing a plurality of charged particles above the upper surface of the substrate, the plasma having a cross sectional area equal to or greater than a surface area of the upper surface of the substrate; applying a first bias voltage to the substrate to attract the charged particles toward the upper surface of the substrate; introducing the charged particles to a region extending under entire upper surface of the substrate; and initiating, concurrently, a first phase transformation in the region from the amorphous phase to a crystalline phase.
摘要翻译：公开了用于处理衬底的方法的几个实例。在特定实施例中，该方法可以包括：将具有上表面和下表面的基底设置在容纳在腔室中的压板上; 在所述基板的上表面上方产生含有多个带电粒子的等离子体，所述等离子体的截面积等于或大于所述基板的上表面的表面积; 向所述衬底施加第一偏置电压以将所述带电粒子吸引到所述衬底的上表面; 将带电粒子引入到在基板的整个上表面下延伸的区域; 并且在从非晶相到结晶相的区域中同时引发第一相转变。

5. 发明申请

WO2013052344A1 TRANSFORMER-COUPLED RF SOURCES FOR PLASMA PROCESSING TOOL 审中-公开
标题翻译：用于等离子体加工工具的变压器耦合射频源
公开(公告)号：WO2013052344A1
公开(公告)日：2013-04-11
申请号：PCT/US2012/057552
申请日：2012-09-27
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , HADIDI, Kamal , DORAI, Rajesh
发明人： HADIDI, Kamal , DORAI, Rajesh
IPC分类号： H01J37/08 , H01J37/32
CPC分类号： H01J37/08 , H01J37/321 , H01J37/3211 , H01J37/32357 , H01J37/32422
摘要： A RF source and method are disclosed which inductively create a plasma within an enclosure without an electric field or with a significantly decreased creation of an electric field. A ferrite material with an insulated wire wrapped around its body is used to efficiently channel the magnetic field through the legs of the ferrite. This magnetic field, which flows between the legs of the ferrite can then be used to create and maintain a plasma. In one embodiment, these legs rest on a dielectric window, such that the magnetic field passes into the chamber. In another embodiment, the legs of the ferrite extend into the processing chamber, thereby further extending the magnetic field into the chamber. This ferrite can be used in conjunction with a PLAD chamber, or an ion source for a traditional beam line ion implantation system.
摘要翻译：公开了RF源和方法，其在外壳内感应地产生等离子体而没有电场或显着减少电场的产生。使用缠绕在其本体上的具有绝缘线的铁氧体材料来有效地将磁场通过铁氧体的腿引导。然后，可以使用在铁氧体的腿部之间流动的磁场来产生和维持等离子体。在一个实施例中，这些腿搁置在电介质窗口上，使得磁场进入腔室。在另一个实施例中，铁氧体的腿部延伸到处理室中，从而进一步将磁场延伸到腔室中。该铁氧体可以与PLAD室或用于传统束线离子注入系统的离子源结合使用。

6. 发明申请

WO2012003445A1 PLASMA UNIFORMITY SYSTEM AND METHOD 审中-公开
标题翻译：等离子体均匀系统和方法
公开(公告)号：WO2012003445A1
公开(公告)日：2012-01-05
申请号：PCT/US2011/042797
申请日：2011-07-01
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , DORAI, Rajesh , HADIDI, Kamal , JAGTAP, Mayur
发明人： DORAI, Rajesh , HADIDI, Kamal , JAGTAP, Mayur
IPC分类号： H01J37/32
CPC分类号： H01J37/32633 , H01J37/32412 , H01J37/32532
摘要： A plasma processing tool comprises a plasma chamber configured to generate a plasma from a gas introduced into the chamber where the generated plasma has an electron plasma frequency. A plurality of electrodes disposed within the chamber. Each of the electrodes configured to create a rapidly-rising-electric-field pulse In a portion of the plasma contained in the chamber. Each of said rapidly-rising-electric-field pulses having a rise time substantially equal to or less than the inverse of the electron plasma frequency and a duration of less than the inverse of the ion plasma frequency. In this manner, the electron energy distribution in the generated plasma may be spatially and locally modified thereby affecting the density, composition and temperature of the species in the plasma and consequently the uniformity of the density and composition of ions and neutrals directed at a target substrate.
摘要翻译：等离子体处理工具包括等离子体室，其被配置为从引入室中的气体产生等离子体，其中产生的等离子体具有电子等离子体频率。设置在室内的多个电极。每个电极被配置为在容纳在腔室中的等离子体的一部分中产生快速上升的电场脉冲。所述快速上升电场脉冲中的每一个具有基本上等于或小于电子等离子体频率的倒数的上升时间和小于离子等离子体频率的倒数的持续时间。以这种方式，产生的等离子体中的电子能量分布可以在空间上和局部地修改，从而影响等离子体中物质的密度，组成和温度，从而影响靶向靶基质的离子和中性粒子的密度和组成的均匀性。

7. 发明申请

WO2005104175A1 FARADAY DOSE AND UNIFORMITY MONITOR FOR PLASMA BASED ION IMPLANTATION 审中-公开
标题翻译：用于基于等离子体离子植入的非离子剂量和均匀性监测器
公开(公告)号：WO2005104175A1
公开(公告)日：2005-11-03
申请号：PCT/US2005/006973
申请日：2005-03-04
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , WALTHER, Steven, R. , DORAI, Rajesh , PERSING, Harold , SCHEUER, Jay , KOO, Bon-Woong , PEDERSEN, Bjorn, O. , LEAVITT, Chris , MILLER, Timothy
发明人： WALTHER, Steven, R. , DORAI, Rajesh , PERSING, Harold , SCHEUER, Jay , KOO, Bon-Woong , PEDERSEN, Bjorn, O. , LEAVITT, Chris , MILLER, Timothy
IPC分类号： H01J37/32
CPC分类号： H01J37/32963 , H01J37/32935 , H01J37/3299 , H01J2237/24405
摘要： A Faraday dose and uniformity monitor can include a magnetically suppressed annular Faraday cup (80) surrounding a target wafer (20). A narrow aperture can reduce discharges within Faraday cup opening (60). The annular Faraday cup can have a continuous cross section to eliminate discharges due to breaks. A plurality of annular Faraday cups at different radii can independently measure current density to monitor changes in plasma uniformity. The magnetic suppression field can be configured to have a very rapid decrease in field strength with distance to minimize plasma and implant perturbations and can include both radial and azimuthal components, or primarily azimuthal components. The azimuthal field component can be generated by multiple vertically oriented magnets of alternating polarity, or by the use of a magnetic field coil. In addition, dose electronics can provide integration of pulsed current at high voltage, and can convert the integrated charge to a series of light pulses coupled optically to a dose controller.
摘要翻译：法拉第剂量和均匀性监测器可以包括围绕目标晶片（20）的磁抑制环形法拉第杯（80）。狭窄的孔径可以减少法拉第杯开口（60）内的排放。环形法拉第杯可以具有连续的横截面，以消除由于断裂引起的排放。多个不同半径的环形法拉第杯可以独立地测量电流密度以监测等离子体均匀性的变化。磁场抑制场可以被配置为具有随着距离的场强非常快速的降低，以使等离子体和植入物扰动最小化，并且可以包括径向和方位角分量，或者主要包括方位角分量。方位角分量可以由交替极性的多个垂直取向的磁体或通过使用磁场线圈来产生。此外，剂量电子学可以提供高电压脉冲电流的集成，并且可以将积分电荷转换成光耦合到剂量控制器的一系列光脉冲。

8. 发明申请

WO2008073747A1 TECHNIQUES FOR CONFINING ELECTRONS IN AN ION IMPLANTER 审中-公开
标题翻译：在离子植入物中配置电子的技术
公开(公告)号：WO2008073747A1
公开(公告)日：2008-06-19
申请号：PCT/US2007/086275
申请日：2007-12-03
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , SMATLAK, Donna, L. , ANGEL, Gordon, C. , DORAI, Rajesh
发明人： SMATLAK, Donna, L. , ANGEL, Gordon, C. , DORAI, Rajesh
IPC分类号： H01J37/02 , H01J37/317 , H01J37/05
CPC分类号： H01J37/3171 , H01J37/026 , H01J2237/0041 , H01J2237/055 , H01J2237/152 , H01J2237/31701
摘要： Apparatus and a method for confining electrons in an ion implanter are disclosed. The apparatus and method comprise a first array of magnets (31) and a second array of magnets (32) positioned along at least a portion of a beam path (30), the first array being on a first side of the beam path and the second array being on a second side of the beam path, the first side opposing the second side.' At least one magnet (302) in the first array may have a pole facing an opposite pole of a corresponding magnet (302) in the second array, on the first and second arrays of magnets may collectively produce cusp magnetic fields to confine electrons in or near the beam path.
摘要翻译：公开了一种用于将电子限制在离子注入机中的装置和方法。该装置和方法包括沿着光束路径（30）的至少一部分定位的第一磁体阵列（31）和第二磁体阵列（32），所述第一阵列位于所述光束路径的第一侧上，并且所述第二阵列第二阵列位于光束路径的第二侧，第一侧与第二侧相对。第一阵列中的至少一个磁体（302）可以具有面对第二阵列中的对应磁体（302）的相对极的极，在第一和第二磁体阵列上可以共同产生尖点磁场以将电子限制在或在光束路径附近。

9. 发明申请

WO2011002688A1 SYSTEM AND METHOD FOR SELECTIVELY CONTROLLING ION COMPOSITION OF PLASMAS 审中-公开
标题翻译：选择性地控制等离子体组成的系统和方法
公开(公告)号：WO2011002688A1
公开(公告)日：2011-01-06
申请号：PCT/US2010/040039
申请日：2010-06-25
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES , HADIDI, Kamal , DORAI, Rajesh , LINDSAY, Bernard, G. , SINGH, Vikram , PAPASOULIOTIS, George, D.
发明人： HADIDI, Kamal , DORAI, Rajesh , LINDSAY, Bernard, G. , SINGH, Vikram , PAPASOULIOTIS, George, D.
IPC分类号： C23C14/48 , H01J37/317 , H01J37/32
CPC分类号： C23C14/48 , H01J37/32412 , H01J37/32935
摘要： A method is disclosed for adjusting the composition of plasmas used in plasma doping, plasma deposition and plasma etching techniques. The disclosed method enables the plasma composition to be controlled by modifying the energy distribution of the electrons present in the plasma. Energetic electrons are produced in the plasma by accelerating electrons in the plasma using very fast voltage pulses. The pulses are long enough to influence the electrons, but too fast to affect the ions significantly. Collisions between the energetic electrons and the constituents of the plasma result in changes in the plasma composition. The plasma composition can then be optimized to meet the requirements of the specific process being used. This can entail changing the ratio of ion species in the plasma, changing the ratio of ionization to dissociation, or changing the excited state population of the plasma.
摘要翻译：公开了一种用于调节用于等离子体掺杂，等离子体沉积和等离子体蚀刻技术的等离子体的组成的方法。所公开的方法使得能够通过修改存在于等离子体中的电子的能量分布来控制等离子体组成。通过使用非常快的电压脉冲加速等离子体中的电子，在等离子体中产生能量电子。脉冲长度足以影响电子，但是太快而不能显着影响离子。能量电子与等离子体成分之间的碰撞导致等离子体组成的变化。然后可以优化等离子体组成以满足所使用的具体方法的要求。这可能需要改变等离子体中的离子种类的比例，改变离子化与解离的比例，或改变等离子体的激发态群体。

10. 发明申请

WO2009064872A3 PARTICLE BEAM ASSISTED MODIFCATION OF THIN FILM MATERIALS 审中-公开
公开(公告)号：WO2009064872A3
公开(公告)日：2009-05-22
申请号：PCT/US2008/083388
申请日：2008-11-13
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , ENGLAND, Jonathan, Gerald , SINCLAIR, Frank , KOO, John (Bon Wong) , DORAI, Rajesh , GODET, Ludovic
发明人： ENGLAND, Jonathan, Gerald , SINCLAIR, Frank , KOO, John (Bon Wong) , DORAI, Rajesh , GODET, Ludovic
IPC分类号： H01L21/26 , H01L29/786 , H01L31/042
摘要： Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: introducing a plurality of first particles to a first region of the substrate so as to form at least one crystal having a grain boundary in the first region without forming another crystal in a second region, the second region adjacent to the first region; and extending the grain boundary of the at least one crystal formed in the first region to the second region after stopping the introducing the plurality of first particles.

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