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1. 发明申请

WO2010048161A2 TECHNIQUES FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：原子层沉积技术
公开(公告)号：WO2010048161A2
公开(公告)日：2010-04-29
申请号：PCT/US2009061298
申请日：2009-10-20
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , MURAKAWA SHIGEMI , SINGH VIKRAM , PAPASOULIOTIS GEORGE D , OLSON JOSEPH C , MURPHY PAUL J , DICKERSON GARY E
发明人： MURAKAWA SHIGEMI , SINGH VIKRAM , PAPASOULIOTIS GEORGE D , OLSON JOSEPH C , MURPHY PAUL J , DICKERSON GARY E
IPC分类号： H01L21/205
CPC分类号： C23C16/45544
摘要： Techniques for atomic layer deposition (ALD) are disclosed, in one particular exemplary embodiment, the techniques may be realized as a system for ALD comprising a plurality of reactors in a stacked configuration, wherein each reactor comprises a wafer holding portion for holding a target wafer, a gas assembly coupled to the plurality of reactors and configured to provide at least one gas to at least one of the plurality of reactors, and an exhaust assembly coupled to the plurality of reactors and configured to exhaust the at least one gas from the at least one of the plurality of reactors. The gas assembly may further comprise a valve assembly coupled to each of the first gas inlet, the second gas inlet, and the third gas inlet, where the valve assembly is configured to selectively release at least one of the first gas, the second gas, and the third gas.
摘要翻译：公开了用于原子层沉积（ALD）的技术。在一个特定的示例性实施例中，所述技术可以实现为用于ALD的系统，其包括处于堆叠构造的多个反应器，其中每个反应器包括用于保持目标晶片的晶片保持部分，气体组件，所述气体组件耦合到所述多个反应器并且被配置为向所述多个反应器中的至少一个提供至少一种气体，以及排气组件，其耦合到所述多个反应器并且被配置为从所述反应器中排出所述至少一种气体多个反应器中的至少一个。气体组件还可以包括阀组件，该阀组件耦合到第一气体入口，第二气体入口和第三气体入口中的每一个，其中阀组件构造成选择性地释放第一气体，第二气体，和第三个气体。

2. 发明申请

WO2009032566A3 TECHNIQUES FOR TERMINAL INSULATION IN AN ION IMPLANTER 审中-公开
标题翻译：离子注入机终端绝缘技术
公开(公告)号：WO2009032566A3
公开(公告)日：2009-04-30
申请号：PCT/US2008074066
申请日：2008-08-22
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , LOW RUSSELL J , LUBICKI PIOTR R , LISCHER JEFFREY D , KRAUSE STEPHEN E , HERMANSON ERIC D , OLSON JOSEPH C , TEKLETSADIK KASEGN D
发明人： LOW RUSSELL J , LUBICKI PIOTR R , LISCHER JEFFREY D , KRAUSE STEPHEN E , HERMANSON ERIC D , OLSON JOSEPH C , TEKLETSADIK KASEGN D
IPC分类号： H01L21/265
CPC分类号： H01J37/3171 , H01J37/08 , H01J37/09 , H01J37/16 , H01J37/248 , H01J2237/026 , H01J2237/038 , H01J2237/2001
摘要： Techniques for terminal insulation for an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an ion implanter comprising a terminal structure defining a terminal cavity. The ion implanter may also comprise a grounded enclosure defining a grounded cavity and the terminal structure may be at least partially disposed within the grounded cavity. The ion implanter may further comprise an intermediate terminal structure disposed proximate an exterior portion of the terminal structure and at least partially disposed within the grounded cavity.
摘要翻译：公开了用于离子注入机的端子绝缘技术。在一个特定的示例性实施例中，该技术可以被实现为包括限定终端腔的终端结构的离子注入机。离子注入机还可以包括限定接地腔的接地外壳，并且端子结构可以至少部分地设置在接地腔内。离子注入机还可以包括设置在终端结构的外部附近并且至少部分地设置在接地腔内的中间终端结构。

3. 发明申请

WO2009085954A2 RF ELECTRON SOURCE FOR IONIZING GAS CLUSTERS 审中-公开
标题翻译：用于气化气体集束的射频电子源
公开(公告)号：WO2009085954A2
公开(公告)日：2009-07-09
申请号：PCT/US2008087430
申请日：2008-12-18
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , OLSON JOSEPH C , SCHEUER JAY T
发明人： OLSON JOSEPH C , SCHEUER JAY T
IPC分类号： H01J37/30 , H01L21/26
CPC分类号： H01J27/18 , H01J27/026 , H01J37/08 , H01J37/30 , H01J37/31 , H01J2237/061 , H01J2237/06366 , H01J2237/0812 , H01J2237/31701
摘要： The present invention discloses a system and method for generating gas cluster ion beams (GCIB) having very low metallic contaminants. Gas cluster ion beam systems are plagued by high metallic contamination, thereby affecting their utility in many applications. This contamination is caused by the use of thermionic sources, which impart contaminants and are also susceptible to short lifecycles due to their elevated operating temperatures. While earlier modifications have focused on isolating the filament from the source gas cluster as much as possible, the present invention represents a significant advancement by eliminating the thermionic source completely. In the preferred embodiment, an inductively coupled plasma and ionization region replaces the thermionic source and ionizer of the prior art. Through the use of RF or microwave frequency electromagnetic waves, plasma can be created in the absence of a filament, thereby eliminating a major contributor of metallic contaminants.
摘要翻译：本发明公开了一种具有非常低金属污染物的气体簇离子束（GCIB）的系统和方法。气体簇离子束系统受到高金属污染的困扰，从而影响其在许多应用中的应用。这种污染是由于使用热电离源引起的，这些热源能够施加污染物，并且由于其运行温度升高而对生命周期的影响也很小。虽然较早的修改集中在尽可能多地将源极气体簇隔离，但本发明通过完全消除热离子源代表了显着的进步。在优选实施例中，电感耦合等离子体和电离区取代现有技术的热离子源和离子发生器。通过使用RF或微波频率电磁波，可以在没有灯丝的情况下产生等离子体，从而消除金属污染物的主要贡献者。

4. 发明申请

WO2007126966A3 INSULATOR SYSTEM FOR A TERMINAL STRUCTURE OF AN ION IMPLANTATION SYSTEM 审中-公开
标题翻译：用于离子植入系统终端结构的绝缘体系统
公开(公告)号：WO2007126966A3
公开(公告)日：2008-03-06
申请号：PCT/US2007007781
申请日：2007-03-28
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , LUBICKI PIORTR R , LOW RUSSELL , LISCHER D JEFFREY , KRAUSE STEPHEN E , HERMANSON ERIC D , OLSON JOSEPH C
发明人： LUBICKI PIORTR R , LOW RUSSELL , LISCHER D JEFFREY , KRAUSE STEPHEN E , HERMANSON ERIC D , OLSON JOSEPH C
IPC分类号： H01J37/16 , H01J37/317 , H01L21/265
CPC分类号： H01J37/16 , H01J37/3171 , H01J2237/026 , H01J2237/038
摘要： An ion implantation system (100) includes an ion source (102) configured to provide an ion beam (152), a terminal structure (104) defining a cavity (110), the ion source at least partially disposed within the cavity, and an insulator system (162,171). The insulator system is configured to electrically insulate the terminal structure and is configured to provide an effective dielectric strength greater than about 72 kilovolts (kV) /inch in a region proximate at least one exterior surface of the terminal structure. A gas box insulator system to electrically insulate a gas box (106) of the ion implantation system is also provided.
摘要翻译：离子注入系统（100）包括被配置为提供离子束（152）的离子源（102），限定空腔（110）的端子结构（104），离子源至少部分地设置在空腔内，以及绝缘子系统（162,171）。绝缘体系统被配置为使端子结构电绝缘并且被配置为在靠近端子结构的至少一个外表面的区域中提供大于约72千伏（kV）/英寸的有效介电强度。还提供了一种用于使离子注入系统的气体箱（106）电绝缘的气体箱绝缘体系统。

5. 发明申请

WO2006133309A3 TECHNIQUE FOR ION BEAM ANGLE SPREAD CONTROL 审中-公开
标题翻译：离子角度角度传播控制技术
公开(公告)号：WO2006133309A3
公开(公告)日：2007-11-15
申请号：PCT/US2006022164
申请日：2006-06-07
申请人： VARIAN SEMICONDUCTOR EQUIPMENT
发明人： GUPTA ATUL , OLSON JOSEPH C
IPC分类号： H01J37/147 , H01J37/317
CPC分类号： H01J37/304 , H01J37/1477 , H01J37/3171 , H01J2237/1507 , H01J2237/3045 , H01J2237/30455 , H01J2237/30472 , H01J2237/31703 , H01L21/26586
摘要： A technique for ion beam angle spread control is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle spread control. The method may comprise directing one or more ion beams at a substrate surface at two or more different incident angles, thereby exposing the substrate surface to a controlled spread of ion beam incident angles.
摘要翻译：公开了一种用于离子束角度扩展控制的技术。在一个特定的示例性实施例中，该技术可以被实现为用于离子束角度扩展控制的方法。该方法可以包括以两个或更多个不同的入射角度在衬底表面处引导一个或多个离子束，从而将衬底表面暴露于受控的离子束入射角扩散。

6. 发明申请

WO2008058246A3 ION IMPLANTATION DEVICE WITH A DUAL PUMPING MODE AND METHOD THEREOF 审中-公开
标题翻译：具有双重泵送模式的离子注入装置及其方法
公开(公告)号：WO2008058246A3
公开(公告)日：2008-07-03
申请号：PCT/US2007084114
申请日：2007-11-08
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , OLSON JOSEPH C , ENGLAND JONATHAN GERALD , HATEM CHRISTOPHER R , SCHEUER JAY THOMAS
发明人： OLSON JOSEPH C , ENGLAND JONATHAN GERALD , HATEM CHRISTOPHER R , SCHEUER JAY THOMAS
IPC分类号： H01J37/08 , H01J27/02 , H01J37/302 , H01J37/317
CPC分类号： H01J27/022 , H01J37/08 , H01J37/302 , H01J37/3171 , H01J2237/006 , H01J2237/182
摘要： An ion implantation device with a dual pumping mode and method thereof for use in producing atomic or molecular ion beams are disclosed. In one particular exemplary embodiment, an ion implantation apparatus is provided for controlling a pressure within an ion beam source housing corresponding to an ion beam species being produced. The ion implantation apparatus may include the ion beam source housing comprising a plurality of species for use in ion beam production. A pumping section may also be included for evacuating gas from the ion beam source housing. A controller may further be included for controlling the pumping section according to pumping parameters corresponding to a species of the plurality of species being used for ion beam production.
摘要翻译：公开了一种用于产生原子或分子离子束的具有双泵浦模式的离子注入装置及其方法。在一个特定的示例性实施例中，提供了一种离子注入装置，用于控制与正在产生的离子束物种相对应的离子束源外壳内的压力。离子注入装置可以包括离子束源外壳，其包括用于离子束生产的多种物质。抽吸部分也可以被包括用于从离子束源外壳抽空气体。还可以包括控制器，用于根据对应于用于离子束生产的多种物种的种类的泵送参数来控制泵送区段。

7. 发明申请

WO2008005137A3 METHODS AND APPARATUS FOR BEAM DENSITY MEASUREMENT IN TWO DIMENSIONS 审中-公开
标题翻译：用于二维光束密度测量的方法和装置
公开(公告)号：WO2008005137A3
公开(公告)日：2008-05-15
申请号：PCT/US2007013350
申请日：2007-06-06
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , GUPTA ATUL , OLSON JOSEPH C , NORRIS GREGG A
发明人： GUPTA ATUL , OLSON JOSEPH C , NORRIS GREGG A
IPC分类号： H01J37/304 , H01J37/244 , H01J37/317
CPC分类号： H01J37/3171 , G01J1/04 , G01J1/0437 , G01J1/0448 , G01J1/4257 , G01J2001/4261 , H01J37/244 , H01J2237/2446 , H01J2237/24507 , H01J2237/24542 , H01J2237/24578 , H01J2237/30472 , H01J2237/31703
摘要： A beam density measurement system (140) includes a shield (150), a beam sensor, (142,242) and an actuator (156). The beam sensor is positioned downstream from the shield in a direction of travel of a beam (104,204). The beam sensor is configured to sense an intensity of the beam, and the beam sensor has a long dimension and a short dimension. The actuator translates the shield relative to the beam sensor, wherein the shield blocks at least a portion of the beam from the beam sensor as the shield is translated relative to the beam sensor, and wherein measured values of the intensity associated with changes in a position of the shield relative to the beam sensor are representative of a beam density distribution of the beam in a first direction defined by the long dimension of the beam sensor.
摘要翻译：光束密度测量系统（140）包括屏蔽（150），光束传感器（142,242）和致动器（156）。光束传感器沿着光束（104,204）的行进方向定位在屏蔽的下游。光束传感器被配置为感测光束的强度，并且光束传感器具有长尺寸和短尺寸。执行器相对于光束传感器平移屏蔽，其中当屏蔽件相对于光束传感器平移时，屏蔽件阻挡来自光束传感器的光束的至少一部分，并且其中与位置变化相关联的强度的测量值屏蔽物相对于光束传感器的光束密度分布代表由光束传感器的长尺寸限定的第一方向上的光束的光束密度分布。

8. 发明申请

WO0237524A3 BI MODE ION IMPLANTATION WITH NON-PARALLEL ION BEAMS 审中-公开
标题翻译：具有非平行离子束的BI模式离子植入
公开(公告)号：WO0237524A3
公开(公告)日：2003-01-30
申请号：PCT/US0131658
申请日：2001-10-11
申请人： VARIAN SEMICONDUCTOR EQUIPMENT
发明人： RENAU ANTHONY , OLSON JOSEPH C
IPC分类号： H01J37/317 , H01L21/265
CPC分类号： H01J37/3171 , H01J2237/24528 , H01J2237/24542
摘要： A method for implanting ions into a workpiece, such as a semiconductor wafer, includes the steps of generating an ion beam, measuring an angle of non-parallelism of the ion beam, tilting the wafer at a first angle, performing a first implant at the first angle, tilting the wafer at a second angle, and performing a second implant at the second angle. The first and second angles are opposite in sign with respect to a reference direction and in magnitude are equal to or greater than the measured angle of non-parallelism. Preferably, the first and second implants are controlled to provide substantially equal ion doses in the workpiece.
摘要翻译：用于将离子注入到诸如半导体晶片的工件中的方法包括以下步骤：产生离子束，测量离子束的非平行度的角度，以第一角度倾斜晶片，在第一角度，以第二角度倾斜晶片，并且以第二角度执行第二植入。第一和第二角度相对于参考方向的符号相反，并且幅度等于或大于所测量的非平行度的角度。优选地，控制第一和第二植入物以在工件中提供基本相等的离子剂量。

9. 发明申请

WO0219374A2 METHODS AND APPARATUS FOR ADJUSTING BEAM PARALLELISM IN ION IMPLANTERS 审中-公开
标题翻译：用于在离子注入器中调整束平行度的方法和装置
公开(公告)号：WO0219374A2
公开(公告)日：2002-03-07
申请号：PCT/US0122392
申请日：2001-07-13
申请人： VARIAN SEMICONDUCTOR EQUIPMENT
发明人： OLSON JOSEPH C , RENAU ANTHONY
IPC分类号： H01J37/147 , H01J37/317 , H01L21/265
CPC分类号： H01J37/3171 , H01J37/1471
摘要： Methods and apparatus for implanting ions in a workpiece, such as a semiconductor wafer, include generating an ion beam, measuring parallelism of the ion beam, adjusting the ion beam for a desired parallelism based on the measured parallelism, measuring a beam direction of the adjusted ion beam, orienting a workpiece at an implant angle referenced to the measured beam direction and performing an implant with the workpiece oriented at the implant angle referenced to the measured beam direction. The implant may be performed with a high degree of beam parallelism.
摘要翻译：用于在诸如半导体晶片的工件中注入离子的方法和设备包括：产生离子束，测量离子束的平行度，基于测量的平行度调整离子束达期望的平行度，测量调整的束方向离子束，以参考测量的射束方向的注入角度对工件进行定向，并且以工件角度为基准对工件进行注入，所述注入角度以所测量的射束方向为参考。可以以高度的光束平行度来执行植入物。

10. 发明申请

WO2009102875A3 APPARATUS FOR MEASURING BEAM CHARACTERISTICS AND A METHOD THEREOF 审中-公开
标题翻译：用于测量光束特性的装置及其方法
公开(公告)号：WO2009102875A3
公开(公告)日：2009-11-05
申请号：PCT/US2009033933
申请日：2009-02-12
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , OLSON JOSEPH C , GUPTA ATUL
发明人： OLSON JOSEPH C , GUPTA ATUL
IPC分类号： H01L21/265 , H01L21/66
CPC分类号： H01J37/3171 , H01J37/304 , H01J2237/2446 , H01J2237/24507 , H01J2237/24528 , H01J2237/24542
摘要： An apparatus and a method for detecting particle beam characteristics are disclosed. In one embodiment, the apparatus may have a body including a first end and second end and at least one detector between the first and second ends. The apparatus may have a transparent state where a portion of the particles entering the apparatus may pass through the apparatus. The apparatus may also have a minimum transparency state where substantially all of the particles entering the apparatus may be prevented from passing through the apparatus and detected. Different transparency state may be achieved by rotating the apparatus or the detector contained therein. With the apparatus, it is possible to detect the beam properties such as the beam intensity, angle, parallelism, and a distribution of the particles in a particle beam.
摘要翻译：公开了一种用于检测粒子束特性的装置和方法。在一个实施例中，设备可以具有包括第一端和第二端的主体以及在第一端和第二端之间的至少一个检测器。该设备可以具有透明状态，其中进入设备的一部分颗粒可以通过设备。该装置还可以具有最小的透明度状态，其中可以防止进入装置的基本上所有的颗粒通过装置并被检测。可以通过旋转装置或其中包含的检测器来实现不同的透明度状态。利用该装置，可以检测诸如光束强度，角度，平行度以及颗粒束中颗粒分布的光束特性。

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