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    • 7. 发明申请
    • イオン注入装置およびイオンビームの偏差角補正方法
    • 离子植入装置和离子束偏转角校正方法
    • WO2008001685A1
    • 2008-01-03
    • PCT/JP2007/062578
    • 2007-06-22
    • 日新イオン機器株式会社山下 貴敏
    • 山下 貴敏
    • H01J37/317H01J37/12H01L21/265
    • H01J37/3171H01J2237/14H01J2237/1538H01J2237/24528
    • An ion implantation apparatus in which the divergence in the Y-direction due to the space charge effect of the ion beam is compensated between the target and the ion beam deflector where the ion beam is separated from neutral particles and thereby the ion beam transportation efficiency is enhanced. The ion implantation apparatus comprises a beam parallizer (14) for converting an ion beam (4) scanned in the X-direction is bent back into a parallel ion beam by a magnetic field and outputting an ion beam (4) having a ribbon shape. The beam parallizer (14) also serves as an ion beam deflector for separating the ion beam (4) and neutral particles by the deflection of the ion beam (4) by the magnetic filed. Near the exit of the beam parallizer (14), electrodes are so disposed as to be opposed to each other in the Y-direction, with the space where the ion beam (4) passes interposed. Thus, an electrostatic lens (30) for converging the ion beam (4) in the Y-direction is provided.
    • 一种离子注入装置,其中由于离子束的空间电荷效应而在Y方向上的发散被补偿在靶和离子束偏转器之间,其中离子束与中性粒子分离,从而离子束输送效率为 增强。 离子注入装置包括用于将在X方向上扫描的离子束(4)转换成通过磁场返回到并联离子束的光束偏光器(14),并输出具有带状的离子束(4)。 光束偏光器(14)还用作离子束偏转器,用于通过磁场使离子束(4)的偏转来分离离子束(4)和中性粒子。 在光束偏光器(14)的出口附近,电极被设置为在Y方向上彼此相对,并且离子束(4)通过的空间被插入。 因此,设置用​​于使离子束(4)沿Y方向会聚的静电透镜(30)。
    • 8. 发明申请
    • ADJUSTABLE IMPLANTATION ANGLE WORKPIECE SUPPORT STRUCTURE FOR AN ION BEAM IMPLANTER
    • 可调植入角度工件用于离子束植入物的支撑结构
    • WO2004012219A1
    • 2004-02-05
    • PCT/US2003/023687
    • 2003-07-29
    • AXCELIS TECHNOLOGIES, INC.
    • FERRARA, Joseph
    • H01J37/317
    • H01J37/3171H01J37/20H01J2237/20207H01J2237/20214H01J2237/24528H01L21/68764H01L21/68771
    • An ion beam implanter includes an ion beam source for generating an ion beam (14) moving along a beam line and an implantation chamber wherein a workpiece (24) is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. The ion beam implanter further includes a workpiece support structure (100) coupled to the implantation chamber and supporting the workpiece. The workpiece support structure includes a first rotation member (110) rotatably coupled to the implantation chamber and including an opening (121) extending through the rotation member and aligned with an opening in a wall of the implantation chamber. The workpiece support structure further includes a second rotation member (150) rotatably coupled to the first rotation member and having an axis of rotation offset from an axis of rotation of the first rotation member, the second rotation member overlying the opening of the first rotation member. The workpiece support structure also includes a third member fixedly attached to the second rotation member, the third member including a rotatable drive (200, 204) supporting the workpiece. The first rotation member, the second rotation member and the rotatable drive of the third rotation member rotate to move the workpiece along a path of travel for implantation of the implantation surface wherein a distance that the ion beam moves through the implantation chamber before striking the implantation surface of the workpiece is constant.
    • 离子束注入机包括用于产生沿着束线移动的离子束(14)的离子束源和注入室,其中工件(24)被定位成与离子束相交,用于离子注入工件的表面 离子束。 离子束注入机还包括耦合到注入室并支撑工件的工件支撑结构(100)。 工件支撑结构包括可旋转地联接到植入室的第一旋转构件(110),并且包括延伸穿过旋转构件并与植入室的壁中的开口对准的开口(121)。 所述工件支撑结构还包括可旋转地联接到所述第一旋转构件并具有偏离所述第一旋转构件的旋转轴线的旋转轴线的第二旋转构件,所述第二旋转构件覆盖所述第一旋转构件的开口 。 工件支撑结构还包括固定地附接到第二旋转构件的第三构件,第三构件包括支撑工件的可旋转驱动器(200,204)。 第一旋转构件,第二旋转构件和第三旋转构件的可旋转驱动器旋转以沿着用于注入植入表面的移动路径移动工件,其中在撞击植入之前离子束移动通过注入室的距离 工件表面是恒定的。